专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2009224788A Probe device 有权
标题翻译：探测器
公开(公告)号：JP2009224788A
公开(公告)日：2009-10-01
申请号：JP2009108190
申请日：2009-04-27
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： TOMIMATSU SATOSHI , KOIKE HIDEMI , AZUMA JUNZO , ISHITANI TORU , SUGIMOTO ARITOSHI , HAMAMURA YUICHI , SEKIHARA TAKESHI , SHIMASE AKIRA
IPC分类号： H01L21/66 , G01N1/28 , G01N1/32 , G01R31/302
摘要： PROBLEM TO BE SOLVED: To provide a method of causing a probe to contact a surface of a sample in a safe and efficient manner after monitoring the height of the probe. SOLUTION: A probe device includes: an ion beam optical system 1 for irradiating a sample 4 with an ion beam 3; a secondary electron detector 10 for detecting a secondary electron emitted from the sample 4 which is irradiated with the ion beam 3; a display 12 for displaying information detected by the secondary detector 10 as an image; a probe 7 which is caused to contact a surface of the sample 4; a probe control device 9 for controlling the drive of the probe 7; and a probe's reference coordinate recording device for previously causing the probe 7 to contact the sample 4 and recording obtained coordinate of the probe's front end, wherein the probe control device 9 controls the drive distance and speed of the probe 7 based on the coordinate recorded by the probe's reference coordinate recording device and the coordinate on the sample 4 which the probe 7 is caused to contact. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在监测探头的高度之后使探针以安全和有效的方式接触样品表面的方法。解决方案：探针装置包括：离子束光学系统1，用于用离子束3照射样品4; 用于检测从离子束3照射的样品4发射的二次电子的二次电子检测器10; 用于显示由二次检测器10检测的信息作为图像的显示器12; 与样品4的表面接触的探针7; 用于控制探针7的驱动的探针控制装置9; 以及探头的参考坐标记录装置，用于预先使探针7接触样本4并记录获得的探头前端的坐标，其中探针控制装置9基于由所述探针7的记录的坐标来控制探针7的驱动距离和速度探针的参考坐标记录装置和探针7所接触的样品4上的坐标。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2003022946A Method for producing semiconductor device 审中-公开
标题翻译：生产半导体器件的方法
公开(公告)号：JP2003022946A
公开(公告)日：2003-01-24
申请号：JP2001205606
申请日：2001-07-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KUMAZAWA TAKAAKI , IWATA HISAFUMI , TSUKUNI KAZUYUKI , HAMAMURA YUICHI
IPC分类号： G01B15/00 , G01N23/225 , G01R31/302 , H01L21/02 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve a problem that an optical inspection equipment possibly detects an abnormality of shape causing no electrical defect or misses detection of a minute defect and, since dimensional distribution of defect can not be measured accurately, an error occurs in the prediction of yield.
SOLUTION: In the production method for managing the production process by measuring the dimensional distribution of a defect occurring in a wiring pattern for measuring short circuit and predicting the yield of semiconductor device using the dimensional distribution and the layout of semiconductor device, means for irradiating the wiring pattern for measuring short circuit with a laser beam and locating a defect by detecting variation of a current flowing through that pattern, and means for measuring the shape of the defect by detecting secondary electrons emitted by irradiating the located position with an electron beam, are employed as means for measuring the dimensions of the defect. Dimensions of the defect are measured by specifying the coordinates of an electrical defect utilizing variation of resistance due to irradiation with laser beam and by means of an SEM.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了解决光学检查设备可能检测到没有电气缺陷的形状的异常或不能检测到微小缺陷的问题，并且由于不能精确地测量缺陷的尺寸分布，所以在预测中发生错误的产量。解决方案：在通过测量在短路测量的布线图案中出现的缺陷的尺寸分布和使用半导体器件的尺寸分布和布局来预测半导体器件的产量的管理生产过程的制造方法中，利用激光束测量短路的布线图案，通过检测流过该图案的电流的变化来定位缺陷，以及用于通过用电子束照射定位位置发射的二次电子来检测缺陷的形状的装置。用作测量缺陷尺寸的手段。通过使用由激光照射引起的电阻的变化以及借助于SEM来指定电缺陷的坐标来测量缺陷的尺寸。

3. 发明专利

JP2003017541A Yield estimation method, yield estimation program, and yield estimation system for thin film product 审中-公开
标题翻译： YIELD估算方法，YIELD估计程序和薄膜产品的评估系统
公开(公告)号：JP2003017541A
公开(公告)日：2003-01-17
申请号：JP2001200302
申请日：2001-07-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KIRINO KEIKO , ONO MAKOTO , IWATA HISAFUMI , HAMAMURA YUICHI , KUMAZAWA TAKAAKI
IPC分类号： H01L21/66 , H01L21/82
摘要： PROBLEM TO BE SOLVED: To implement a higher-precision and more rational technique for analyzing the yield caused by occurred defects by using layout data in the field of manufacturing thin film product.
SOLUTION: The determination of how critical a defect on a layout of a thin film product is performed by calculating the distance of a coordinate of the occurred defect from a graphical vector on the layout. A minimum distance connecting to two different graphics at the same time is determined as a critical defect dimension, and the determination result is stored, thus when a request is made for estimation and computation of the yield of defect cause, a critical probability of defect dimension is calculated from a ratio indicating a certain defective dimension which most probably causes a defect, and the yield estimation result is provided in real time from a defect distribution. The aforementioned estimation of the yield of defect cause in an easy way before product manufacturing allows changing to a layout designed to be resistant to defect, and managing quantitatively the relationship between cleanliness and yield of manufacturing process.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过使用制造薄膜产品领域的布局数据，实现更高精度更合理的技术来分析由发生的缺陷引起的产量。解决方案：通过从布局图形矢量中计算发生的缺陷坐标的距离来确定薄膜产品的布局上的缺陷的关键程度。将两个不同图形同时连接的最小距离确定为临界缺陷维度，并且确定结果被存储，因此当提出要求用于估计和计算缺陷原因的产量时，缺陷维度的临界概率由指示一定缺陷维度的比率计算出，其最可能导致缺陷，并且从缺陷分布实时提供产量估算结果。在产品制造之前，上述对缺陷产率的估计以简单的方式导致可以改变为设计为抗缺陷的布局，并且定量地管理清洁度和制造过程的产量之间的关系。

4. 发明专利

JP2008066711A Yield predictive system and method for semiconductor device 有权
标题翻译： YIELD预测系统和半导体器件的方法
公开(公告)号：JP2008066711A
公开(公告)日：2008-03-21
申请号：JP2007175578
申请日：2007-07-03
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORIOKA NATSUYO , IKEGAYA KATSUMI , YAMAGUCHI YASUNORI , ITO KAZUO , ISHIKAWA SEIJI , HAMAMURA YUICHI
IPC分类号： H01L21/66
CPC分类号： G05B15/02 , G05B17/02
摘要： PROBLEM TO BE SOLVED: To calculate the average fatality of a yield prediction subject product from the type feature quantity of the subject product to precisely predict yield during manufacturing of the yield prediction subject product. SOLUTION: The monthly fatal defect density of a reference product that is different in wiring pattern from, but identical in manufacturing process with the prediction subject product is calculated from measured data. The average fatality of the prediction subject product and of the reference product are calculated from the type feature quantity of the prediction subject product and of the reference product. The monthly fatal defect density of the reference product is multiplied by a calculated average fatality ratio to calculate the monthly fatal defect density of the yield prediction subject product. A yield is calculated using a monthly fatal defect density in the period when a yield prediction subject lot of prediction subject products is processed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：从产品类型特征量计算产量预测对象产品的平均死亡率，以精确地预测在产量预测对象产品的制造期间的产量。解决方案：根据测量数据计算与预测对象产品的制造工艺不同的布线图案的参考产品的每月致命缺陷密度，但与制造工艺相同。根据预测对象产品和参考产品的类型特征量计算预测主题产品和参考产品的平均死亡率。将参考产品的每月致命缺陷密度乘以计算的平均死亡率，以计算产量预测主题产品的每月致命缺陷密度。在处理预测对象产品的产量预测对象批次的期间，使用每月致命缺陷密度计算产量。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2003303746A Method and system for analyzing failure of semiconductor and program for failure analysis of semiconductor 有权
标题翻译：半导体失效分析方法与系统及半导体故障分析方案
公开(公告)号：JP2003303746A
公开(公告)日：2003-10-24
申请号：JP2002105006
申请日：2002-04-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HAMAMURA YUICHI , IWATA HISAFUMI , SHIMASE AKIRA
IPC分类号： G01R31/28 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for analyzing failures and a program for analyzing failures to systematically fix a quantity of the degree of suspicion using a doubtful failure list detected by a light-emitting analysis and OBIRCH analysis and a suspected failure list narrowed down by testing.
SOLUTION: The duplicated locations of irregular fault candidates are extracted, the degree of suspicion is systematically fixed to a quantity, and thereafter the priority sequence of fault candidates as the object of detail cause analysis performed later is defined using the information (doubtful failure list) of a plurality of suspicious fault areas of semiconductor device obtained by detection with a physical analysis device such as light emission microscope or OBIRCH (Optical Beam Induced Resistance Change) and using a suspected failure list narrowed column by electrical measurement and testing.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于分析故障的方法和系统，以及用于分析故障的程序，使用由发光分析和OBIRCH分析检测到的可疑故障列表系统地确定怀疑程度的数量，以及一个疑似故障列表通过测试缩小。解决方案：提取不规则故障候选的复制位置，将怀疑程度系统地固定为数量，之后使用该信息（可疑的）定义作为稍后执行的详细信息分析对象的故障候选者的优先顺序故障列表）通过用诸如发光显微镜或OBIRCH（光束感应电阻变化）的物理分析装置进行检测而获得的半导体装置的多个可疑故障区域，并通过电测量和测试使用可疑故障列表变窄列。版权所有（C）2004，JPO

6. 发明专利

JP2003023053A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003023053A
公开(公告)日：2003-01-24
申请号：JP2001207564
申请日：2001-07-09
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： SEKIHARA TAKESHI , SUGIMOTO ARITOSHI , KOIKE HIDEMI , ISHITANI TORU , UMEMURA KAORU , SHIMASE AKIRA , AZUMA JUNZO , HAMAMURA YUICHI , TOMIMATSU SATOSHI
IPC分类号： G01B11/00 , G01B15/00 , G01N23/225 , G01R1/06 , G01R31/302 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of displaying a defect on a substrate in a relatively short time on an output unit, without making mistake of defect positions.
SOLUTION: The method for manufacturing the semiconductor device comprises steps of calculating a two-dimensional particle image 7 obtained by simultaneously scanning beams 2 to a relatively wide region on the substrate, thereby automatically detecting change points 10a, 11a of voltage contracts on the X-axis direction and the Y-axis direction for indicating the defect position, and obtaining position coordinates of the points 10a, 11a from deflecting voltages of the beams 2 without moving the stage.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够在输出单元上在较短时间内在基板上显示缺陷的半导体器件的制造方法，而不会产生缺陷位置的错误。解决方案：制造半导体器件的方法包括以下步骤：计算通过将光束2同时扫描到基板上相对较宽的区域而获得的二维粒子图像7，从而自动检测X轴上的电压收缩的变化点10a，用于指示缺陷位置的轴线方向和Y轴方向，并且从而不移动平台从而从梁2的偏转电压获得点10a，11a的位置坐标。

7. 发明专利

JP2003023056A Method for sorting defect of semiconductor device, method for predicting yield of the semiconductor device, method for manufacturing the semiconductor device, defect-sorting system of semiconductor device and semiconductor device-sorting apparatus, and program used therefor and recording medium 审中-公开
标题翻译：用于分割半导体器件的缺陷的方法，用于预测半导体器件的形成的方法，用于制造半导体器件的方法，半导体器件的缺陷分配系统和半导体器件分离器件，以及用于其和记录介质的程序
公开(公告)号：JP2003023056A
公开(公告)日：2003-01-24
申请号：JP2001209741
申请日：2001-07-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HAMAMURA YUICHI , SUGIMOTO ARITOSHI , OKUDA HIROTO
IPC分类号： G01R31/02 , G01N21/956 , G01R31/302 , G06T1/00 , G06T7/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To execute an accurate defect fatalness evaluation, a yield prediction and a fault position specification in an in-line defect checking step.
SOLUTION: A method for sorting defects of a semiconductor device comprises steps of extracting a wiring position which becomes a fault candidate by superposing layout pattern data of a semiconductor chip with a defecting image, discriminating wirings of the extracted fault candidate according to a wiring function type, and sorting a short-circuit mode type, a disconnection mode type or the like according to a wiring fault mode type.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：在线缺陷检查步骤中执行准确的缺陷致命性评估，成品率预测和故障位置指定。解决方案：一种用于分类半导体器件的缺陷的方法包括以下步骤：通过用缺陷图像叠加具有半导体芯片的布局图案数据来提取成为故障候选的布线位置，根据布线功能类型识别所提取的故障候选的布线，并根据布线故障模式类型对短路模式类型，断开模式类型等进行排序。

8. 发明专利

JP2003007779A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003007779A
公开(公告)日：2003-01-10
申请号：JP2001184954
申请日：2001-06-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IKODA MASAMI , HAMAMURA YUICHI , SUGIMOTO ARITOSHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To shorten time required for analyzing a defect on a semiconductor wafer and to improve the product developing efficiency of a semiconductor device.
SOLUTION: The detected defects on the semiconductor wafer detected by an inspecting device are overlapped in a semiconductor chip SC unit. The areas of the detected defects are automatically divided, and the areas where the detected defects are positioned are outputted as a part of data on the detected defects. Thus, the judgment of the detected defects is made easy.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：缩短分析半导体晶片上的缺陷所需的时间并提高半导体器件的产品开发效率。解决方案：由检查装置检测到的半导体晶片上检测到的缺陷在半导体芯片SC单元中重叠。检测到的缺陷的区域被自动分割，并且检测到的缺陷的位置的区域作为检测到的缺陷的数据的一部分被输出。因此，检测到的缺陷的判断变得容易。

9. 发明专利

JPH11274044A Machining method by charged beam and machining system thereof, and observation method and system by the charged beam 失效
标题翻译：充电梁及其加工系统的加工方法及充电梁的观测方法及系统
公开(公告)号：JPH11274044A
公开(公告)日：1999-10-08
申请号：JP7565798
申请日：1998-03-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MIZUKOSHI KATSURO , HONGO MIKIO , HAMAMURA YUICHI , SHIMASE AKIRA , TAKAHASHI TAKAHIKO , OKABE YASUO , KYOTANI KENICHI
IPC分类号： H01J37/22 , H01J37/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable analysis of improper analyses, maintenance, specification assessment through a microscopic machining at high accuracy. By specifying an irradiating region for charged beam based upon a relating distance between a standard mark measured at an optical measuring step and charged beam, and by performing micro machining in a high precision by having a specified irritating region irradiated with a charged beam machining to. SOLUTION: Making and measuring device for a standard mark consist is of an XYZθ table 26 on which a semiconductor device 100 is mounted, an applying device 230 which applies a trace liquid material 10 to a local part on a surface of the semiconductor device 100, and a heating means 220 which is hardened with the trace material 10 applied by the applying device 230 through heating. Next a two dimensional distance between a microscopic standard mark 11 and a portion 1 to be machined based upon an optical image which is observed or detected is calculated, and additionally a pipette 21, as an applying device 230 or a position alignment mark which is formed at a positioning pin terminal and on the surface of the semiconductor device 100, is detected. Furthermore, these are controlled by an using optical microscope 210 and a controller 210.
摘要翻译：要解决的问题：通过微观加工能够高精度地分析不正确的分析，维护，规格评估。通过基于在光学测量步骤测量的标准标记和带电光束之间的相关距离来指定用于带电束的照射区域，并且通过具有用充电光束加工照射的指定的刺激区域以高精度进行微机械加工。解决方案：用于标准标记组合的制造和测量装置是其上安装有半导体器件100的XYZθ表26，将微量液体材料10施加到半导体器件100的表面上的局部部分的施加装置230，以及加热装置220，其通过加热由施加装置230施加的痕量材料10硬化。接下来，计算基于观察或检测的光学图像的微观标准标记11和待加工部分1之间的二维距离，另外，移动管21作为施加装置230或形成的位置对准标记在定位销端子和半导体器件100的表面上被检测。此外，这些由使用光学显微镜210和控制器210控制。

10. 发明公开

EP1335209A4 PROBE DRIVING METHOD, AND PROBE APPARATUS 审中-公开
标题翻译：探头控制方法及装置PROBE
公开(公告)号：EP1335209A4
公开(公告)日：2009-08-26
申请号：EP01936933
申请日：2001-06-08
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： TOMIMATSU SATOSHI , KOIKE HIDEMI , AZUMA JUNZO , ISHITANI TOHRU , SUGIMOTO ARITOSHI , HAMAMURA YUICHI , SEKIHARA ISAMU , SHIMASE AKIRA
IPC分类号： G01N1/28 , G01N1/32 , G01N23/04 , G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/20 , G01Q60/44 , G01R1/06 , G01R31/28 , G01R31/311 , H01J37/28 , H01L21/66 , G01B15/00
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe driving apparatus, which can bring a probe into safe and efficient contact with a sample surface by monitoring the probe height. The information of the height of the probe from the sample surface is obtained either by detecting a probe shadow (54) cast just before the contact with the sample, or from a change in the relative positions between the probe image and the sample image, as formed when obliquely irradiated with an ion beam.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式