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1. 发明专利

JPS60200558A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60200558A
公开(公告)日：1985-10-11
申请号：JP5610684
申请日：1984-03-26
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： MORISHITA JIYUN , SATOU KAZUYOSHI , KAMATA CHIYOJI , YAMASHITA MICHIO , USAMI TAMOTSU , OKUYA KEN , SHIRAI MASAYUKI , YAMAZAKI YASUYUKI , OOTSUKA KANJI
IPC分类号： H01L25/00 , H01L23/14 , H01L23/15 , H01L23/538
摘要： PURPOSE:To readily perform multiple types by forming a wiring auxiliary substrate on which a semiconductor element is mounted, in a master-slice type structure. CONSTITUTION:A wiring auxiliary substrate 3 is secured through gold-silicon eutectic portion 2 to one surface of a main substrate 1 which forms the base of a semiconductor device. A plurality of semiconductor pellets 5 are connected in flip chip type in opposed state with bump electrodes 4 made of solder on the opposite surface and hence the circuit wiring forming surface of the substrate 3, and electrically connected by the electrodes 4 between the pellets 5 and the wirings of the substrate 3. The substrate 3 is designed in so-called master-slice type. Accordingly, the substrate 3 can incorporate with semiconductor devices of multiple types by altering the wirings to provide advantageous cost.

2. 发明专利

JPS6053061A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6053061A
公开(公告)日：1985-03-26
申请号：JP16051583
申请日：1983-09-02
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , OOTSUKA KANJI , SEKI MASATOSHI , SHIRAI MASAYUKI , YAMAZAKI YASUYUKI
IPC分类号： H01L23/28 , H01L23/31
摘要： PURPOSE:To prevent outflow to the outside of a package of a gelled substance by coating the upper section of the gelled substance coated on a pellet with a substance having viscosity higher than the gelled substance. CONSTITUTION:A rubber group silicon 8 is fed onto silicon gel 5 coated on a pellet 3 and wires 4 through potting, etc., and the silicon gel 5 is coated completely. The rubber group silicon 8 is of a material having viscosity higher than the silicon gel 5, and does not elute to the outside of a package even on a mounting. Accordingly, wetproofing by the silicon gel 5 completely coating the pellet 3 and the wires 4 as a whole is ensured, and wetproofing is improved by the rubber group silicon 8, and temperature cycle resistance is also enhanced.

3. 发明专利

JPS59132137A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59132137A
公开(公告)日：1984-07-30
申请号：JP591283
申请日：1983-01-19
申请人： Hitachi Ltd
发明人： USAMI TAMOTSU , SHIRAI MASAYUKI , YAMAZAKI YASUYUKI , OKUYA KEN , OOTSUKA KANJI
IPC分类号： H01L21/52 , H01L21/58
CPC分类号： H01L24/32 , H01L24/29 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/26175 , H01L2224/27013 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83051 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2224/83805 , H01L2924/01013 , H01L2924/01018 , H01L2924/01038 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/10253 , H01L2924/15787 , H01L2924/16152 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512
摘要： PURPOSE:To prevent an exfoliation in a semiconductor pellet by mounting the pellet on a substrate by using a eutectic alloy consisting of aluminum, gold and silicon. CONSTITUTION:An aluminum layer 4 is applied and formed on a ceramic substrate 1 through evaporation, etc., and an aluminum layer 5 and a gold layer 6 are formed on the back of a semiconductor pellet 2 through evaporation, etc. A gold foil 7 is interposed between the aluminum layer 4 and the gold layer 6 and the whole is heated in a short time at approximately 420 deg.C on a pellet mount. Consequently, the aluminum layers 4, 5, the gold layer 6 and the gold foil 7 are melted, and made eutectic with the silicon of the pellet 2, thus forming an Al- Au-Si eutectic alloy 3. An oxidation in silicon in the eutectic alloy 3 can be prevented, and an exfoliation in the pellet 2 and a cracking to the pellet can be obviated.
摘要翻译：目的：通过使用由铝，金和硅组成的共晶合金将颗粒安装在基板上，以防止半导体颗粒的剥落。构成：通过蒸发等在陶瓷基板1上形成铝层4，通过蒸镀等在半导体芯片2的背面形成铝层5和金层6。金箔7 介于铝层4和金层6之间，整体在大约420℃的短时间内在颗粒安装件上加热。因此，铝层4,5，金层6和金箔7熔化，并与颗粒2的硅共晶，从而形成Al-Au-Si共晶合金3.在硅中氧化可以防止共晶合金3，并且可以消除颗粒2中的剥离和颗粒的裂纹。

4. 发明专利

JPS5923531A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5923531A
公开(公告)日：1984-02-07
申请号：JP13195882
申请日：1982-07-30
申请人： Hitachi Ltd
发明人： SHIRAI MASAYUKI , OOTSUKA KANJI , USAMI TAMOTSU , YAMAZAKI YASUYUKI
IPC分类号： H01L23/52 , H01L21/60
CPC分类号： H01L23/147 , H01L23/15 , H01L2224/16 , H01L2224/16145 , H01L2224/48 , H01L2224/48091 , H01L2224/48472 , H01L2924/15312 , H01L2924/15787 , H01L2924/16152 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To enable to mount in high density by fixing an Si substrate on a ceramic base when mounting flip-chip type semiconductor pellet elements in a package having the ceramic base, forming a circuit pattern by a photographic technique on the surface, and face-down bonding the pellet. CONSTITUTION:A plurality of external pins 11 are projected on the periphery of the lower surface of a package base 10 made of a ceramic material, and conductor 11a is arranged on the periphery of the upper surface of the base 10 via through holes, not shown. Then, an Si substrate 12 is secured to the center on the upper surface of the base 10, a thin aluminum circuit pattern 13 is formed on the upper surface, pellet pads 13a is arranged in the vicinity of the center and wire pads 13b are arranged on the periphery by photographic technique. Subsequently, the pellet 14 is face-down bonded to the pad 13a, and wires 15 for connecting the pin 11 to the conductor 11a are connected to the pad 13b. Then, a cap 17 is mounted via resin 16 on the surface.
摘要翻译：目的：为了在将倒装芯片型半导体芯片元件安装在具有陶瓷基底的封装中时，通过将Si衬底固定在陶瓷基底上，能够高密度地安装，通过表面上的照相技术形成电路图案，下降粘合颗粒。构成：多个外部销11突出在由陶瓷材料制成的封装基座10的下表面的周边上，并且导体11a通过未示出的通孔布置在基座10的上表面的周边上。然后，将Si基板12固定在基座10的上表面的中央部，在上表面形成有薄的铝电路图案13，在中央附近设置有片状的焊盘13a，配线焊盘13b布置通过摄影技术在周边。随后，将颗粒14面朝下接合到焊盘13a，并且用于将引脚11连接到导体11a的导线15连接到焊盘13b。然后，盖17通过树脂16安装在表面上。

5. 发明专利

JPH08227966A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08227966A
公开(公告)日：1996-09-03
申请号：JP34237295
申请日：1995-12-28
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , OZAKI HIROSHI , OTSUKA KANJI , FURUKAWA MICHIAKI , YAMAZAKI YASUYUKI
IPC分类号： H01L23/50
摘要： PURPOSE: To greatly increase bonding strength between resin of a package of a semiconductor device and a lead even if the semiconductor device is for mounting a large pellet by bonding an inner lead to a circuit formation surface of a pellet to be mounted. CONSTITUTION: An insulation sheet 5 sized not to cover a bonding pad is bonded to a circuit formation surface of a pellet 1. An inner lead of a lead 2a with an outer lead in a side of a bonding pad non-formation side of a pellet is extended to an upper surface of the insulation sheet 5. A tip of an inside of each lead 2a is positioned before a bonding pad and is bonded to the insulation sheet 5a. That is, an inner lead of the lead 2a is extended to a circuit formation surface between a plurality of bonding pads arranged in a circuit formation surface along one side la of the pellet 1 and the other side 1b opposite to the one side 1a.

6. 发明专利

JPH08227965A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08227965A
公开(公告)日：1996-09-03
申请号：JP34237595
申请日：1995-12-28
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , OZAKI HIROSHI , OTSUKA KANJI , FURUKAWA MICHIAKI , YAMAZAKI YASUYUKI
IPC分类号： H01L21/52 , H01L23/50
摘要： PURPOSE: To greatly increase bonding strength between resin of a package of a semiconductor device and a lead even if the semiconductor device is for mounting a large pellet by bonding a first lead to a circuit formation surface of a semiconductor pellet and arranging a second lead outside the semiconductor pellet. CONSTITUTION: An insulation sheet 5 sized not to cover a bonding pad is bonded to a circuit formation surface of a pellet 1. An inner lead of a lead 2a with an outer lead in a side of a bonding pad non-formation side of a pellet is extended to an upper surface of the insulation sheet 5. A lead has the lead 2a to be bonded to a circuit formation surface of the pellet 1 and a lead 2d to be arranged outside the pellet 1. An inner lead part of the lead 2a is connected to a bonding pad 7 through a wire 8a and an inner lead part of the lead 2d is connected to the bonding pad 7 through a wire 8b.

7. 发明专利

JPS61140140A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61140140A
公开(公告)日：1986-06-27
申请号：JP26074784
申请日：1984-12-12
申请人： Hitachi Ltd
发明人： EMOTO YOSHIAKI , FURUKAWA MICHIAKI , OTSUKA KANJI , KOBAYASHI TSUNEO , YAMAZAKI YASUYUKI
IPC分类号： H01L21/52 , H01L21/58 , H01L23/52
CPC分类号： H01L24/83 , H01L24/32 , H01L2224/16145 , H01L2224/32014 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/8319 , H01L2224/8385 , H01L2924/014 , H01L2924/07802 , H01L2924/15153 , H01L2924/15165 , H01L2924/1532 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To enable pellet junction of large heat-dissipation which is strong to temperature variation by a method wherein pellet junction is accomplished by using a liquid or a metal having the melting point in the neighborhood of the following temperature at a normal operating temperature for the title device. CONSTITUTION:A pellet is joined to the pellet mount substrate with mercury or its alloy or gallium or its alloy. Since a mother chip 9 is in junction to the top of the recess of the substrate 1 with mercury 10 which is liquid at normal temperature, the heat evolving in the pellet 8 which is transmitted to the mother chip 9 through solder bumps 12 can be dissipated to the substrate 1 through the mercury with very high efficiency. Besides,because of mother chip junction with the mercury 10, the longitudinal movement of the mother chip is difficult to occur on account of the surface tension of the mercury 10, but the lateral movement is very easy. Therefore, even if three of the substrate 1, mercury 10, and mother chip 3 are all widely different in the coefficient of thermal expansion, thermal strains occuring with the variation in temperature do not generate.
摘要翻译：目的：为了实现对温度变化强烈的大散热的颗粒接合，其中通过在正常工作温度下使用具有在随后温度附近的熔点的液体或金属来实现颗粒接合，标题设备。构成：使用汞或其合金或镓或其合金将颗粒连接到颗粒安装基板。由于母芯片9在正常温度下与液态10的基板1的凹部的顶部接合，所以通过焊料凸块12传输到母芯片9的颗粒8中放出的热量可以被消散通过汞以非常高的效率向基板1施加。此外，由于与水银10的母芯片接合，由于水银10的表面张力，母芯片的纵向移动难以发生，而横向运动非常容易。因此，即使三个基板1，水银10和母芯片3的热膨胀系数都差别很大，也不会产生随着温度变化而发生的热应变。

8. 发明专利

JPS60183759A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60183759A
公开(公告)日：1985-09-19
申请号：JP3856284
申请日：1984-03-02
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： USAMI TAMOTSU , OKUYA KEN , SHIRAI MASAYUKI , YAMAZAKI YASUYUKI , OOTSUKA KANJI , SATOU KAZUYOSHI , KAMATA CHIYOJI , MORISHITA JIYUN , YAMASHITA MICHIO
IPC分类号： H01L23/52 , H01L23/15 , H01L23/373 , H01L23/538
摘要： PURPOSE:To check generation of exfoliation and a crack, etc. at the connecting part of a semiconductor device by a method wherein a main substrate to be fitted with an auxiliary substrate for wiring is formed of a material mainly consisting of silicon carbide. CONSTITUTION:A main substrate 1 to be fitted with an auxiliary substrate 3 for wiring is manufactured of a material mainly consisting of silicon carbide. The coefficient of thermal expansion of the SiC thereof is extremely close by Si, and Si according to matching of the coefficients of thermal expansion of the SiC and like this, adhesion of the auxiliary substrate 3 for wiring to the main substrate 1 is insured without generating problems such as a crack and exfoliation, etc. to be caused according to thermal stress, and reliability is enhanced sharply. Moreover, because, SiC is material having a favorable heat dissipating property, heat generated from semiconductor pellets 5 of the plural number of pieces is transmitted to the main substrate 1 through solder pads 4 and the auxiliary substrate 3 for wiring, and moreover, transmitted mainly to a heat disipating fin 14 through the material mainly consisting of the SiC of the main substrate 1 thereof, and radiated to the periphery through the heat dissipating fin 14.

9. 发明专利

JPS60171752A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60171752A
公开(公告)日：1985-09-05
申请号：JP2707484
申请日：1984-02-17
申请人： HITACHI LTD
发明人： USAMI TAMOTSU , SAWARA KUNIZOU , ISHIDA TAKASHI , YAMAZAKI YASUYUKI , OOTSUKA KANJI
IPC分类号： H05K1/18 , H01L23/495 , H01L23/50 , H05K3/34
摘要： PURPOSE:To avoid generation of the displacement of the position of a lead and the curve of the lead, and to remove generation of a trouble in regard to connection at manufacture of a semiconductor device by a method wherein a semiconductor package is mounted on a mounting substrate while leaving frame parts to fix the leads as they are, and the frame parts are removed after mounting is completed. CONSTITUTION:Semiconductor elements are adhered to be mounted on a multiple lead frame using an adhesive material, the semiconductor elements and the lead frame are bonded according to wire bonding using connector wires, and after wire bonding is completed, put in a metal mold, transfer molding is performed according to resin, and the molded lead frame is cut to be separated individually. At this time, to cut the frame part thereof, the frame parts 4 shown by the dotted lines are removed, while the frame parts 3 to fix the positions of the leads 2 are left, and cut to be formed. As a result, the semiconductor package is made to have the construction continuously connected with the frame parts 3 to fix the leads 2 of a large number at the tips of the leads 2 arranged by a large number to the outside of a resin sealed body 1. The resin sealed body thereof is mounted on a mounting substrate as it is, and after then the frame parts 3 are removed.

10. 发明专利

JPS60154642A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60154642A
公开(公告)日：1985-08-14
申请号：JP1001484
申请日：1984-01-25
申请人： HITACHI LTD
发明人： SHIRAI MASAYUKI , OOTSUKA KANJI , OKUYA KEN , YAMAZAKI YASUYUKI , SEKI MASATOSHI
IPC分类号： H01L21/60 , H01L21/92
摘要： PURPOSE:To improve the lifetime and the reliability of a semiconductor device by forming a bump electrode of a metal which has physical properties similar to those of lead-tin alloy except lead-tin alloy, thereby eliminating the radiation of alpha-ray from an electrode bonding portion. CONSTITUTION:A bump electrode is formed of a metal which has physical properties similar to those of a solder except the solder such as, for example, Au-Sn alloy, Au-Si alloy, or Au-Ge alloy, thereby eliminating the radiation of alpha-ray from the electrode bonding portion. The metal has more excellent creeping phenomenon (in which a stress produced by the bump electrode by the heat of a semiconductor chip is absorbed by deforming the bump electrode) than a solder bump electrode. Thus, the disconnection of the electrode due to thermal cycle which is a large problem of the bump electrode can be prevented.

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