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    • 10. 发明专利
    • PRESSURE DETECTOR
    • JPS5882137A
    • 1983-05-17
    • JP17974281
    • 1981-11-11
    • HITACHI LTD
    • TAKAHASHI YUKIOSHIMAZOE MICHITAKA
    • G01L9/04G01L9/00
    • PURPOSE:To raise safety and reliability by forming a pressure receiving chamber by making anode-connection of the diaphragm made of a semiconductor single crystal at a pressure conversion section with a member that is provided with a fluid introduction hole with thermal expansion coefficient that is about the same as the diaphragm. CONSTITUTION:A pressure conversion section 11 consists of a single crystal diaphragm 12 that is provided with a strain sensitive section, an insulation film that is formed on the diaphragm 12 and a thin film strain gauge 14 that is fixed on the insulation film 13. The pressure conversion section 11 is stacked on a metallic supporting base 20 made of Kovar through a glass base 18 on which a fluid introduction hole 17 with thermal expansion coefficient that is about the same as that of the diaphragm 12 on the pressure conversion section 11. The pressure conversion section 11 and the metallic supporting base 20 are electrically firmly connected by anode-connection to form a pressure receiving chamber 21. With this arrangement organic materials that deteriorate characteristic can be eliminated and also the effects of the strain of the weldment of the gauge 14 and others can be avoided.