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1. 发明专利

JP2005071775A Absorption current image observation apparatus in electron microscope 有权
标题翻译：电子显微镜中的吸收电流图像观察装置
公开(公告)号：JP2005071775A
公开(公告)日：2005-03-17
申请号：JP2003299477
申请日：2003-08-25
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： OSHIMA TAKU , MAKINO HIROSHI , TOYAMA HIROSHI , SHINADA HIROYUKI
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/04 , H01J37/244 , H01J37/28
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/2605
摘要： PROBLEM TO BE SOLVED: To solve a problem wherein it is hard for conventional SEMs to take measurements at a high speed and take accurate measurements through an insulator because the conventional SEMs uses a continuous electron beam, and it is impossible to apply voltage to the sample during the measurement of current.
SOLUTION: In this absorption current image observation apparatus in an electron microscope, by pulse-modulating the electron beam and extracting a high-frequency signal component from the sample, electrons absorbed in the sample can be detected at a high speed and with precision. Thereby, precise and high-speed absorption current measurements can be achieved. In addition, a high-functionality inspection apparatus can be provided.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决传统SEM难以高速进行测量并通过绝缘体进行精确测量的问题，因为常规SEM使用连续电子束，并且不可能施加电压在测量电流时对样品。解决方案：在该电子显微镜的吸收电流图像观察装置中，通过脉冲调制电子束并从样品中提取高频信号成分，能够以高速和精确。因此，可以实现精确和高速吸收电流测量。此外，可以提供高功能性的检查装置。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006108643A For charged particle beam lithography device and charged particle beam lithography method 有权
标题翻译：填充粒子束光刻设备和带电粒子束光刻方法
公开(公告)号：JP2006108643A
公开(公告)日：2006-04-20
申请号：JP2005243544
申请日：2005-08-25
申请人： Canon Inc , Hitachi High-Technologies Corp , キヤノン株式会社 , 株式会社日立ハイテクノロジーズ
发明人： TANIMOTO AKIYOSHI , HAYATA YASUNARI , SUGAYA MASAKAZU , TOYAMA HIROSHI , TSUTSUMI TSUYOSHI , SOMETA YASUHIRO
IPC分类号： H01L21/027 , H01J37/305 , H01L21/683
CPC分类号： G03F7/2059 , H01J2237/0044 , H01J2237/3175 , H01L21/6833
摘要： PROBLEM TO BE SOLVED: To improve the positional accuracy of a circuit pattern drawn on a wafer by dynamically detecting the potential of the wafer through a drawing time and by correcting the potential. SOLUTION: Contact resistance generated by a wafer 101 (sample) and an earth pin 107 (contact terminal) is measured, and then an electric current flowing to the earth potential from the wafer 101 (sample) via the earth pin 107 (contact terminal) is measured. On the basis of the measurement result, a potential difference is given between the wafer 101 (sample) and the earth potential. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过在拉伸时间内动态地检测晶片的电位并通过校正电位来提高在晶片上绘制的电路图案的位置精度。解决方案：测量由晶片101（样品）和接地引脚107（接触端子）产生的接触电阻，然后测量从晶片101（样品）经由接地引脚107流入地电位的电流（接触端子）。基于测量结果，在晶片101（样品）和地电位之间给出电位差。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2012216845A Sample inspection device and creation method for absorption current image 有权
标题翻译：样品检查装置和吸收电流图像的创建方法
公开(公告)号：JP2012216845A
公开(公告)日：2012-11-08
申请号：JP2012112054
申请日：2012-05-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OBUKI TOMOHARU , TOYAMA HIROSHI , MITSUI YASUHIRO , FUKUI MUNETOSHI , NARA YASUHIKO , ANDO TORU , OKI KATSUO , SAITO TSUTOMU , KOMORI MASAAKI
IPC分类号： H01L21/66 , G01R31/28
摘要： PROBLEM TO BE SOLVED: To provide a sample inspection device and a creation method for an absorption current image which can acquire a clear absorption current image from an absorbed current detected by using a plurality of probes without including difference in amplification rate in input, and can improve measurement efficiency.SOLUTION: A plurality of probes 4 are brought into contact with a sample 2, and while irradiating the sample 2 with an electron beam 1, current that flows through the probes 4 is measured, and signals from at least two probes 4 are input into a differential amplifier 6. Output from the differential amplifier 6 is amplified and an absorption current image 7 is created on the basis of the output from the differential amplifier 6 and scanning information of the electron beam 1. Thereby, The clear absorption current image 7 can be obtained without including difference in amplification rate in input, and measurement efficiency in failure analysis of the semiconductor sample 2 can be improved.
摘要翻译：解决的问题：提供一种吸收电流图像的样本检查装置和创建方法，其可以从通过使用多个探针检测的吸收电流获取清晰的吸收电流图像，而不包括输入中的放大率的差异，并可提高测量效率。解决方案：使多个探针4与样品2接触，并且在用电子束1照射样品2的同时，测量流过探针4的电流，并且来自至少两个探针4的信号为输入到差分放大器6.差分放大器6的输出被放大，并且基于差分放大器6的输出和电子束1的扫描信息产生吸收电流图像7.从而，清除吸收电流图像可以在不包括输入的放大率的差异的情况下获得图7，并且可以提高半导体样品2的故障分析的测量效率。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2005347281A Circuit pattern inspection device 有权
标题翻译：电路图案检查装置
公开(公告)号：JP2005347281A
公开(公告)日：2005-12-15
申请号：JP2005237080
申请日：2005-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKATO ATSUKO , MURAKOSHI HISAYA , SHINADA HIROYUKI , OSHIMA TAKU , NOZOE MARI , TOYAMA HIROSHI , IWABUCHI HIROKO , IIZUKA MASAMI
IPC分类号： H01L21/66 , H01J37/05 , H01J37/147 , H01J37/244 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To conduct high-precision and rapid inspection of a semiconductor in a desired contrast by efficiently and rapidly detecting secondary electrons, reflected electrons or both of them generated from a substrate, in a method for inspecting a defect, a foreign substance, a residue and the like of the same design pattern of a semiconductor device by using an electron beam.
SOLUTION: A detector for detecting electrons generated from a surface of the substrate is composed of divided detection elements, desired control according to a sample state is executed to orbits of the electrons, and a calculation process of an obtained output signal of each element is carried out.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过有效和快速地检测从基板产生的二次电子，反射电子或它们二者在所需对比度中进行高精度和快速检查，在用于检查缺陷的方法中，通过使用电子束的半导体器件的相同设计图案的异物，残留物等。解决方案：用于检测从衬底的表面产生的电子的检测器由分割的检测元件组成，根据样品状态的期望控制被执行到电子的轨道，并且所获得的输出信号的计算处理元素被执行。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2007180035A Method and apparatus for inspecting circuit pattern 有权
标题翻译：检查电路图的方法和装置
公开(公告)号：JP2007180035A
公开(公告)日：2007-07-12
申请号：JP2007000916
申请日：2007-01-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , SUGIYAMA KATSUYA , TAKATO ATSUKO , HIROI TAKASHI , YOSHIMURA KAZUSHI , SUGIMOTO ARITOSHI , YODA HARUO , KURODA KATSUHIRO , USAMI YASUTSUGU , TANAKA MAKI , KANEKO YUTAKA , TOYAMA HIROSHI , INO TADAO , YAJIMA YUSUKE , ANDO MASAAKI , MAEDA SHUNJI , KUBOTA HITOSHI
IPC分类号： H01J37/28 , G01N23/225 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在用于比较在基板上产生的缺陷，异物和电路图案的残留物的二次电子图像的检查方法中，使用绝缘材料快速，稳定且准确地检查电路图案的半导体器件。解决方案：在该电路图案检查方法中，在通过将大电流电子束19辐射到基板9上来改变电路图案的部件的电位之前，在要检查的基板9上形成电子束图像以高速度。在检查之前，除了用于形成用于检查的图像的第一电子束之外，用第二带电粒子束104照射基板9以稳定该部件的电位。此外，二次电子检测信号在传送之前被数字化，以获得高效率和高SN比的高质量电子束图像。通过该检查方法，可以检查具有绝缘材料的电路图案。由于可以发现在诸如半导体器件的各种衬底制造工艺中产生的现有技术无法检测到的这些缺陷和异常，可以降低衬底制造工艺中的缺陷部分，并且可以提高可靠性。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004031976A Inspection method using electron beam and inspection device 有权
公开(公告)号：JP2004031976A
公开(公告)日：2004-01-29
申请号：JP2003202164
申请日：2003-07-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , SUGIYAMA KATSUYA , TAKATO ATSUKO , TOYAMA HIROSHI
IPC分类号： G01N23/225 , G01R31/302 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method using electron beam which can speed up the inspection and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by the retarding voltage impressed to a sample 13. The sample 13 is scanned by the electron beam while moving, and the secondary electron 33 generated from the sample 13 is accelerated by the retarding voltage and becomes almost parallel beam. Then the beam is deflected by an E×B deflector 18 which is located between the objective lens 9 and the sample 13, and it irradiates a secondary electron generating body 19. A second secondary electron 20 generates from the secondary electron generating body 19, and is detected by a charged particle detector 21. The detected output signal is stored as a picture signal, and the stored picture is compared at an operation part 29 and a defect determining part 30 to determine the defect. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2005137071A Oscillating generator 审中-公开
标题翻译：振荡发电机
公开(公告)号：JP2005137071A
公开(公告)日：2005-05-26
申请号：JP2003368305
申请日：2003-10-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MIYAZAKI SUKEYUKI , WATANABE KAZUKI , TOYAMA HIROSHI
IPC分类号： H02M3/07 , F42C11/02 , H02N1/08 , H02P9/48
CPC分类号： H02P9/48 , F42C11/02 , H02N1/08
摘要： PROBLEM TO BE SOLVED: To realize a variable capacity type oscillating generator which can perform an optimum power generation corresponding to the changes of the frequency, the amplitude and phase of the oscillating energy to utilize the variable capacity type oscillating generator for converting an oscillating energy into an electric energy by utilizing a resonance type variable capacity under an environment having an arbitrary oscillation.
SOLUTION: The oscillating generator includes an initial charge proving circuit together with a resonance type variable capacity, a start/stop circuit, a reference clock circuit, a pulse generator, a charge transportation circuit, and an output control circuit. The initial charge proving circuit and the start/stop circuit control and store the state of a power generation operation. The reference clock circuit and the pulse generating circuit generate the reference signal and timing control signal corresponding to the oscillation energy received by the generator. The charge transportation circuit supplies and extracts the charge to the resonance variable capacity based on the timing control signal to generate the electric energy. The output control circuit stabilizes the output power generated from the charge transportation circuit.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：实现一种可变容量型振荡发生器，其可以执行与频率的变化相对应的最佳发电，振荡能量的振幅和相位以利用可变容量型振荡发生器来转换在具有任意振荡的环境下利用谐振型可变容量将能量振荡成电能。解决方案：振荡发生器包括初始充电验证电路以及谐振型可变容量，起动/停止电路，参考时钟电路，脉冲发生器，充电输送电路和输出控制电路。初始充电验证电路和启动/停止电路控制和存储发电操作的状态。参考时钟电路和脉冲发生电路产生对应于由发生器接收的振荡能量的参考信号和定时控制信号。电荷输送电路基于定时控制信号将电荷提供并提取到谐振可变容量，以产生电能。输出控制电路稳定从电荷输送电路产生的输出功率。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JPH11344689A SOLID-STATE LASER DEVICE 失效
公开(公告)号：JPH11344689A
公开(公告)日：1999-12-14
申请号：JP15408798
申请日：1998-06-03
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： INO TADAO , MIYAI TAKESHI , SUKETA YASUSHI , SAGA HIDEKI , TOYAMA HIROSHI
IPC分类号： G02F1/01 , G02F1/03 , G02F1/11 , H01S3/00 , H01S3/109
摘要： PROBLEM TO BE SOLVED: To reduce-high-frequency noise of a solid-state blue laser device. SOLUTION: The output light of the solid-state laser light source 1 is taken out as a desired light output 6 through an optical modulator 4 having a diffracting function and a part of the output of the solid-state laser light source 1 is converted 7 into an electric signal which is added to the said optical modulator to separate the light of a high-frequency noise component to a different direction from the said desired light output. This solid-state laser device divides 8 a part of the output of an optical detecting circuit 7, differentiates a part of the rest by a differentiating circuit 9, separates a rise and a fall of the noise of the differentiated signal by half-wavelength rectifier circuits 10 and 11 and adds them to the divided noise by an adding circuit 1 to approximately advance the phase of a noise waveform and to correct the delay of the optical modulator 4.

9. 发明专利

JP2000223542A INSPECTION METHOD AND INSPECTION APPARATUS USING ELECTRON BEAM 失效
公开(公告)号：JP2000223542A
公开(公告)日：2000-08-11
申请号：JP33164899
申请日：1999-11-22
申请人： HITACHI LTD
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , TAKATO ATSUKO , TOYAMA HIROSHI , SUGIYAMA KATSUYA
IPC分类号： G01R31/302 , G01B15/00 , G01N23/225 , G01R1/06 , G06T1/00 , G06T7/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and an inspection apparatus using an electron beam, which enhances resolution and aims to improve the speed, reliability, and downsizing. SOLUTION: When applying voltage to a sample 13 via a sample stage 12 and focusing an electron beam on the sample 13 for scanning and shifting the sample stage 12 continuously during the scanning and detecting the charged particles generated from the sample 13, thereby detecting the defect of the sample 13, the dimension between the sample stage and a shield frame is decided, based on the limit of the discharge generated between the sample stage 12 and the shield frame, and this apparatus is provided with a coil of at least six poles to correct the shape of an electron beam. During the shifting of the sample 13, it is blanked and deflected with the crossover of the electron beam as the fulcrum for blanking, and the magnitude of the voltage applied to the sample 13 is decided by the kind of the sample 13.

10. 发明专利

JP2000188310A CIRCUIT PATTERN INSPECTION DEVICE 失效
公开(公告)号：JP2000188310A
公开(公告)日：2000-07-04
申请号：JP36406098
申请日：1998-12-22
申请人： HITACHI LTD
发明人： TAKATO ATSUKO , MURAKOSHI HISAYA , SHINADA HIROYUKI , OSHIMA TAKU , NOZOE MARI , TOYAMA HIROSHI , IWABUCHI HIROKO , IIZUKA MASAMI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To reflect inspection results in the manufacturing conditions of a semiconductor device so as to improve the reliability of the device, by respectively installing amplifier circuits and arithmetic circuits which perform arithmetic processing on the outputs of a plurality of elements in accordance with inspection modes to the elements, and acquiring secondary electronic images, etc., by performing arithmetic processing on the outputs of the elements. SOLUTION: For image formation, either a method in which a substrate 10 to be inspected is two-dimensionally scanned with an electron beam 201 while an X-Y stage is kept in a standstill state or a method in which the substrate 10 is scanned one-dimensionally only with the beam 201 while the stage 11 is continuously moved in the direction perpendicular to the scanning direction can be selected. Efficient inspections can be performed in such a way that, when only the specific location of the substrate 10 is inspected, the inspection is performed while the stage 11 is kept in a standstill state and, when the wide area of the substrate 10 is inspected, the inspection is performed while the stage 11 is continuously moved. In order to obtain the image of the surface of the substrate 10, secondary electrons 202 and antielectrons by projecting the electron beam 201 upon the substrate 10 in a narrowed- down state and detecting the electrons synchronously to the scanning with the beam 201 and the movement of the stage 11.

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