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1. 发明申请

US20050153462A1 Method for fabricating semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20050153462A1
公开(公告)日：2005-07-14
申请号：US11022973
申请日：2004-12-28
申请人： Hisashi Yano , Shinichiro Hayashi
发明人： Hisashi Yano , Shinichiro Hayashi
IPC分类号： C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3213 , H01L21/00 , H01L21/8242 , H01L21/31 , H01L21/469
CPC分类号： H01L28/40 , C23C16/409 , H01L21/31604 , H01L21/31691 , H01L21/32136 , H01L28/56 , H01L28/60
摘要： As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.
摘要翻译：作为制造半导体器件的方法，首先在半导体衬底上形成下电极，然后通过使用第一源气体的CVD在下电极上形成第一铁电体膜。此后，通过使用第二源气体的CVD，在第一铁电体膜上形成第二铁电体膜。随后，在第二铁电体膜上形成上电极。在该方法中，第一源气体中所含的铋浓度与第二源气体中所含的铋浓度不同。

2. 发明授权

US07166884B2 Method for fabricating semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US07166884B2
公开(公告)日：2007-01-23
申请号：US11022973
申请日：2004-12-28
申请人： Hisashi Yano , Shinichiro Hayashi
发明人： Hisashi Yano , Shinichiro Hayashi
IPC分类号： H01L27/108 , H01L21/00 , H01L21/8242
CPC分类号： H01L28/40 , C23C16/409 , H01L21/31604 , H01L21/31691 , H01L21/32136 , H01L28/56 , H01L28/60
摘要： As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.
摘要翻译：作为制造半导体器件的方法，首先在半导体衬底上形成下电极，然后通过使用第一源气体的CVD在下电极上形成第一铁电体膜。此后，通过使用第二源气体的CVD，在第一铁电体膜上形成第二铁电体膜。随后，在第二铁电体膜上形成上电极。在该方法中，第一源气体中所含的铋浓度与第二源气体中所含的铋浓度不同。

3. 发明申请

US20090117898A1 Base Station and Mobile Station 有权
标题翻译：基站和移动台
公开(公告)号：US20090117898A1
公开(公告)日：2009-05-07
申请号：US12108047
申请日：2008-04-23
申请人： Atsuhiko Sato , Sadayoshi Kiyo , Shinichiro Hayashi
发明人： Atsuhiko Sato , Sadayoshi Kiyo , Shinichiro Hayashi
IPC分类号： H04W4/00
CPC分类号： H04W72/005 , H04W4/12 , H04W68/00
摘要： Problems can be solved by a base station to which a location of a mobile station is registered and which performs a radio communication with the MS, and when receiving distribution information, divides the distribution information into N pieces, and incorporates the divided distribution information in N pieces of reception channels to successively transmit them to the MS. It can be achieved by a MS which is in a waiting state of a BS and which performs a radio communication with the BS, and when receiving distribution information which is incorporated in reception channels and divided, stores the distribution information, and when determining completion of the distribution of the distribution information, constructs the N pieces of divided information and displays it.
摘要翻译：可以通过登记有移动站的位置并与MS进行无线通信的基站来解决问题，并且当接收到分发信息时，将分发信息划分为N个部分，并将划分的分发信息合并在N中接收信道，连续发送给MS。可以通过处于BS的等待状态并与BS进行无线通信的MS来实现，并且当接收到并入接收信道中的分配信息并被分割，存储分发信息时，以及当确定完成时分发信息的分发，构建N条分割信息并显示。

4. 发明申请

US20070158715A1 Ferroelectric capacitor and method for fabricating the same 审中-公开
标题翻译：铁电电容器及其制造方法
公开(公告)号：US20070158715A1
公开(公告)日：2007-07-12
申请号：US11540761
申请日：2006-10-02
申请人： Shinichiro Hayashi
发明人： Shinichiro Hayashi
IPC分类号： H01L29/94
CPC分类号： H01L28/75 , H01L27/11507 , H01L28/56 , H01L28/65
摘要： In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, variations in composition profile of elements constituting the ferroelectric film are 50% or lower in the thickness direction of the ferroelectric film, and the polarization switching time of the ferroelectric film is 1 μs or less.
摘要翻译：在铁电电容器中，包括：下电极; 形成在下电极上的铁电膜; 并且形成在强电介质膜上的上电极，构成铁电体膜的元件的组成轮廓的变化在铁电体膜的厚度方向上为50％以下，强电介质膜的极化切换时间为1μ以下。

5. 发明申请

US20070065654A1 Eraser 有权
标题翻译：橡皮
公开(公告)号：US20070065654A1
公开(公告)日：2007-03-22
申请号：US11603794
申请日：2006-11-22
申请人： Shinichiro Hayashi , Ryuzo Yamamoto
发明人： Shinichiro Hayashi , Ryuzo Yamamoto
IPC分类号： B32B3/06
CPC分类号： B43L19/0025 , Y10T428/249953 , Y10T428/249954 , Y10T428/249955 , Y10T428/249958 , Y10T428/249978 , Y10T428/249979 , Y10T428/249981 , Y10T428/249986 , Y10T428/249991 , Y10T428/249992 , Y10T428/249993
摘要： An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 μm, and the void portions may have an average pore size of 10 μm to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).
摘要翻译：橡皮擦由包含橡胶组分或树脂组分的弹性材料和用于增强弹性材料的骨架结构构成，并且骨架结构由诸如由摩擦破裂的有机聚合物的多孔结构材料制成。骨架结构的多孔结构材料中的空隙部分含有橡皮擦组合物的弹性材料。这里，骨架结构的骨架部的平均厚度可以为1〜100μm，空隙部的平均孔径可以为10μm〜3mm。橡皮擦的表面硬度可以为50〜80，粘着强度为1.5〜20（kgf）。

6. 发明授权

US07134196B2 Electronic device and manufacturing same 失效
公开(公告)号：US07134196B2
公开(公告)日：2006-11-14
申请号：US10812017
申请日：2004-03-30
申请人： Bunji Moriya , Seiichi Tajima , Fumikachi Kurosawa , Shinichiro Hayashi
发明人： Bunji Moriya , Seiichi Tajima , Fumikachi Kurosawa , Shinichiro Hayashi
IPC分类号： H05K3/30
CPC分类号： H01L23/3121 , C25D5/10 , C25D17/28 , H01L21/56 , H01L23/49582 , H01L24/45 , H01L24/97 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/45124 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01058 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/15151 , H05K3/284 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2224/81 , H01L2224/48 , H01L2224/05644
摘要： In a method of manufacturing an electronic device, an electronic component and a mount substrate are disposed such that one of surfaces of the electronic component faces toward one of surfaces of the mount substrate, and a connection electrode of the electronic component is electrically connected and mechanically bond to a patterned conductor of the mount substrate. A resin film is then disposed on the electronic component and the mount substrate. A gas captured in between the resin film and the electronic component is sucked through a hole provided in the mount substrate from a side of the mount substrate opposite to the electronic component. The resin film is thereby deformed to closely contact the electronic component and the mount substrate. The resin film is then heated and adhered to the mount substrate.

7. 发明申请

US20050006684A1 Capacitive element and semiconductor memory device 失效
标题翻译：电容元件和半导体存储器件
公开(公告)号：US20050006684A1
公开(公告)日：2005-01-13
申请号：US10916482
申请日：2004-08-12
申请人： Yoshihisa Nagano , Shinichiro Hayashi
发明人： Yoshihisa Nagano , Shinichiro Hayashi
IPC分类号： H01L21/02 , H01L21/8242 , H01L29/76
CPC分类号： H01L28/55 , H01L27/10852 , H01L28/65 , H01L28/90
摘要： A capacitive element includes a lower electrode having a three-dimensional shape, an upper electrode formed so as to be opposed to the lower electrode, and a capacitor insulating film formed between the lower and upper electrodes and made of a crystallized ferroelectric material. The thickness of the capacitor insulating film is set at 12.5 through 100 nm both inclusive.
摘要翻译：电容元件包括具有三维形状的下电极，形成为与下电极相对的上电极，以及形成在下电极和上电极之间并由结晶铁电材料制成的电容器绝缘膜。电容绝缘膜的厚度设定为12.5〜100nm。

8. 再颁专利

USRE38565E1 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures 有权
标题翻译：通过使用基本上平滑的底部电极结构，具有改善的记忆保持率的薄膜铁电电容器
公开(公告)号：USRE38565E1
公开(公告)日：2004-08-17
申请号：US10359997
申请日：2003-02-06
申请人： Shinichiro Hayashi , Tatsuo Otsuki
发明人： Shinichiro Hayashi , Tatsuo Otsuki
IPC分类号： H01L2100
CPC分类号： H01L28/60 , H01L28/55
摘要： A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.

9. 发明授权

US06541375B1 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention 失效
标题翻译：用于制造平滑电极的DC溅射工艺和具有改善的记忆保持力的薄膜铁电电容器
公开(公告)号：US06541375B1
公开(公告)日：2003-04-01
申请号：US09128249
申请日：1998-08-03
申请人： Shinichiro Hayashi , Koji Arita
发明人： Shinichiro Hayashi , Koji Arita
IPC分类号： H01L2144
CPC分类号： H01L28/75 , C23C14/08 , H01L21/2855 , H01L28/55 , H01L28/60
摘要： A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by DC reactive sputtering.
摘要翻译：铁电薄膜电容器具有平滑的电极，允许相对较强的极化，较少的疲劳和较少的压印，因为铁电电容器老化。光滑的电极表面由直流反应溅射制成。

10. 发明授权

US06448598B2 Semiconductor memory 有权
标题翻译：半导体存储器
公开(公告)号：US06448598B2
公开(公告)日：2002-09-10
申请号：US09338542
申请日：1999-06-23
申请人： Yoshihisa Nagano , Shinichiro Hayashi , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Shinichiro Hayashi , Yasuhiro Uemoto
IPC分类号： H01L27108
CPC分类号： H01L27/10852 , H01L28/55
摘要： A semiconductor memory includes plural lower electrodes formed on a semiconductor substrate; a capacitor dielectric film of an insulating metal oxide continuously formed over the plural lower electrodes; plural upper electrodes formed on the capacitor dielectric film in positions respectively corresponding to the plural lower electrodes; and plural transistors formed on the semiconductor substrate. The plural lower electrodes are respectively connected with source regions of the plural transistors.
摘要翻译：半导体存储器包括形成在半导体衬底上的多个下电极; 连续地形成在所述多个下电极上的绝缘金属氧化物的电容器电介质膜; 在分别对应于多个下电极的位置上形成在电容器电介质膜上的多个上电极; 以及形成在半导体基板上的多个晶体管。多个下电极分别与多个晶体管的源极区域连接。

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