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1. 发明授权

US4187614A Tracer head 失效
标题翻译：示踪头
公开(公告)号：US4187614A
公开(公告)日：1980-02-12
申请号：US931280
申请日：1978-08-04
申请人： Hisanori Abiru , Yoshiaki Nakao , Yoshiaki Imamura , Hidetaka Sada
发明人： Hisanori Abiru , Yoshiaki Nakao , Yoshiaki Imamura , Hidetaka Sada
IPC分类号： G01B5/012 , G01B7/02 , G01B7/28
CPC分类号： G01B5/012
摘要： A tracer head for effecting three dimensional tracing of a model surface in a highly efficient and precise manner is described herein. The tracer head has a base frame, a tracer shaft, a stylus mounted at one end of the tracer shaft for tracing said model surface, a plurality of supports for the tracer shaft provided at at least two locations on the base frame, each support including a member which has a moderate resiliency in the thrust direction of the tracer shaft as well as either a strong resiliency exceeding a certain extent or rigidity in the radial direction of the tracer shaft, displacement detectors mounted on the base frame, a rod spring forming a part of the tracer shaft disposed between the supports for transmitting movement of said stylus to a thrust direction displacement detector and having a moderate resiliency in the radial direction of said tracer shaft for being bent when the stylus is moved laterally, and a cylindrical transmission member for transmitting a movement of said stylus to the radial direction displacement detectors.
摘要翻译：本文描述了用于以高效和精确的方式实现模型表面的三维跟踪的示踪头。示踪器头具有底架，示踪轴，安装在示踪器轴的一端的用于跟踪所述模型表面的触针，用于示踪轴的多个支撑件

2. 发明申请

US20090069577A1 Silicon-Based Cross-Coupling Reagent and Production Method of Organic Compound Using the Same 有权
标题翻译：硅基交联试剂及其使用的有机化合物的制备方法
公开(公告)号：US20090069577A1
公开(公告)日：2009-03-12
申请号：US11918261
申请日：2005-11-21
申请人： Yoshiaki Nakao , Tamejiro Hiyama
发明人： Yoshiaki Nakao , Tamejiro Hiyama
IPC分类号： C07D333/02 , C07F7/08 , C07F7/02 , C07C33/34 , C07C255/01 , C07C69/76
CPC分类号： C07C253/30 , C07B37/04 , C07C17/263 , C07C29/32 , C07C33/20 , C07C41/30 , C07C45/68 , C07C67/343 , C07C69/76 , C07C201/12 , C07C255/07 , C07C255/41 , C07F7/081 , C07F7/0814 , C07F7/1804 , C12C11/02 , Y02P20/582 , C07C25/02 , C07C25/13 , C07C25/06 , C07C25/18 , C07C22/08 , C07C25/24 , C07C33/30 , C07C33/24 , C07C47/548 , C07C49/794 , C07C49/807 , C07C47/55 , C07C205/06 , C07C43/215 , C07C43/205
摘要： In one embodiment of the present invention, a silicon-based cross-coupling reagent is disclosed which is a highly stable tetraorganosilicon compound allowing for a cross-coupling reaction under mild reaction conditions without using fluoride ions, transition metal promoter, or strong bases, and the residue of the silicon reagent can be recovered and reused. The silicon-based cross-coupling reagent is a silicon compound in which an o-hydroxymethylphenyl group is connected to a silicon atom for intramolecular activation.
摘要翻译：在本发明的一个实施方案中，公开了一种硅基交联偶联剂，其是高度稳定的四有机硅化合物，其允许在温和的反应条件下进行交叉偶联反应而不使用氟离子，过渡金属促进剂或强碱，以及可以回收和再利用硅试剂的残留物。硅基交联偶联剂是其中邻羟基甲基苯基连接到硅原子用于分子内活化的硅化合物。

3. 发明授权

US07835169B2 Semiconductor memory device and semiconductor memory system 有权
标题翻译：半导体存储器件和半导体存储器系统
公开(公告)号：US07835169B2
公开(公告)日：2010-11-16
申请号：US12368622
申请日：2009-02-10
申请人： Yasuo Murakuki , Yasushi Gohou , Shunichi Iwanari , Masanori Matsuura , Yoshiaki Nakao
发明人： Yasuo Murakuki , Yasushi Gohou , Shunichi Iwanari , Masanori Matsuura , Yoshiaki Nakao
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.
摘要翻译：半导体存储器件包括多个存储单元阵列，每个存储单元阵列包括以矩阵图案排列的多个存储单元，以及多个存储单元阵列共享的单元板板线，每个单元板线对应于存储单元的行和每个单元格板线连接到相应行之一的存储单元。每个存储单元阵列包括多个字线，每个字线对应于存储单元阵列中存储单元的行中的每一行。连接到每个单元格板行的存储单元的数量大于连接到与每个单元格板行相对应的一个字线的存储单元的数量。

4. 发明申请

US20100023840A1 ECC CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM 审中-公开
标题翻译： ECC电路，半导体存储器件，存储器系统
公开(公告)号：US20100023840A1
公开(公告)日：2010-01-28
申请号：US12480294
申请日：2009-06-08
申请人： Yoshiaki Nakao , Yasushi Gohou , Shunichi Iwanari , Masanori Matsuura , Yasuo Murakuki
发明人： Yoshiaki Nakao , Yasushi Gohou , Shunichi Iwanari , Masanori Matsuura , Yasuo Murakuki
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/13 , G06F11/1008 , H03M13/19
摘要： A syndrome generation section generates a syndrome from input data having d bits of data bits and k bits of parity bits. A syndrome table stores a syndrome pattern indicating that no error has occurred in the input data and syndrome patterns indicating an error position. A comparison section compares the syndrome generated by the syndrome generation section with the syndrome patterns in the syndrome table, outputs a match signal when a syndrome pattern matching the syndrome exists, and outputs a no-match signal when no syndrome pattern matching the syndrome exists. An error correction section corrects the error in the input data based on the match signal from the comparison section.
摘要翻译：校正子产生部分从具有数据位d位和奇偶校验位k位的输入数据生成校正子。校正子表存储指示在输入数据中没有发生错误的校正子模式和指示错误位置的校正子模式。比较部分将由校正子产生部分产生的综合征与综合征表中的综合征模式进行比较，当不存在匹配该综合征的综合征模式时，输出匹配信号，并且当不存在与该综合征相匹配的症状模式时，输出不匹配信号。误差校正部分根据比较部分的匹配信号校正输入数据中的误差。

5. 发明授权

US08731254B2 Biological signal drawing apparatus and biological signal drawing method 有权
标题翻译：生物信号绘图仪和生物信号绘图法
公开(公告)号：US08731254B2
公开(公告)日：2014-05-20
申请号：US12612701
申请日：2009-11-05
申请人： Yoshiaki Nakao , Kaoru Imajo
发明人： Yoshiaki Nakao , Kaoru Imajo
IPC分类号： G06K9/00 , G06T7/00 , G06F19/00
CPC分类号： G06T7/0012 , A61B5/044 , A61B5/7445 , G06F19/321
摘要： A biological signal drawing apparatus draws biological signals as drawing points in time series. The biological signal drawing apparatus includes: a thinner performing a thinning process to thin a first number of the drawing points corresponding to the biological signals sampled in each pixel zone, to obtain a second number of the drawing points for each pixel zone, the second number being smaller than the first number; a calculator, after the thinning process is performed, calculating a parameter based on at least one difference of values of adjacent two of the drawing points included in a group that includes: a first drawing point being a center in time series in the group and having a first value; and at least one second drawing point preceding or succeeding the first drawing point in time series and having a second value; and a processor performing a process of: performing a weighted moving average calculation using the first value, the second value and the calculated parameter, to obtain a third value; and replacing the first value with the third value.
摘要翻译：生物信号绘图装置以时间序列绘制生物信号作为绘图点。该生物信号描绘装置包括：对每个像素区采样的生物信号对应的第一数量的绘图点进行细化处理，以获得每个像素区的第二数量的绘图点，第二数目小于第一个数字; 计算器，在执行间隔处理之后，基于包括在组中的相邻两个绘图点的值的至少一个差异来计算参数，该组包括：作为该组中的时间序列中心的第一绘图点，并具有第一个值以及在第一绘图点之前或之后的至少一个第二绘制点，并且具有第二值; 以及处理器，执行以下处理：使用所述第一值，所述第二值和所计算的参数来执行加权移动平均计算，以获得第三值; 并用第三个值替换第一个值。

6. 发明授权

US08446751B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08446751B2
公开(公告)日：2013-05-21
申请号：US13170645
申请日：2011-06-28
申请人： Yasuo Murakuki , Shunichi Iwanari , Yoshiaki Nakao
发明人： Yasuo Murakuki , Shunichi Iwanari , Yoshiaki Nakao
IPC分类号： G11C5/02 , G11C5/06 , G11C5/10 , G11C7/02 , G11C11/22 , G11C11/24
CPC分类号： H01L27/105 , H01L27/0207 , H01L27/11509 , H01L28/55
摘要： The demand for reducing the size and increasing the degree of integration of semiconductor memory devices has increased. In a semiconductor memory device, a smoothing capacitor which has to be provided therein for stabilizing a power supply voltage etc. is formed in an underlying layer of memory cells A and B to overlap the two memory cells A and B which are adjacent each other. Thus, an area occupied by the smoothing capacitor having a large capacity can be reduced to increase the degree of integration, and the smoothing capacitor having a large capacity can be provided in the semiconductor memory device.
摘要翻译：减小半导体存储器件的尺寸和集成程度的需求增加。在半导体存储器件中，必须在其中提供用于稳定电源电压等的平滑电容器形成在存储单元A和B的下层中以与彼此相邻的两个存储单元A和B重叠。因此，能够减小由容量大的平滑电容器占有的面积，提高积分度，能够在半导体存储装置中设置容量大的平滑电容器。

7. 发明授权

US07960571B2 Silicon-based cross-coupling reagent and production method of organic compound using the same 有权
标题翻译：硅基交联偶联剂及其制备方法的有机化合物
公开(公告)号：US07960571B2
公开(公告)日：2011-06-14
申请号：US11918261
申请日：2005-11-21
申请人： Yoshiaki Nakao , Tamejiro Hiyama
发明人： Yoshiaki Nakao , Tamejiro Hiyama
IPC分类号： C07D333/10
CPC分类号： C07C253/30 , C07B37/04 , C07C17/263 , C07C29/32 , C07C33/20 , C07C41/30 , C07C45/68 , C07C67/343 , C07C69/76 , C07C201/12 , C07C255/07 , C07C255/41 , C07F7/081 , C07F7/0814 , C07F7/1804 , C12C11/02 , Y02P20/582 , C07C25/02 , C07C25/13 , C07C25/06 , C07C25/18 , C07C22/08 , C07C25/24 , C07C33/30 , C07C33/24 , C07C47/548 , C07C49/794 , C07C49/807 , C07C47/55 , C07C205/06 , C07C43/215 , C07C43/205
摘要： In one embodiment of the present invention, a silicon-based cross-coupling reagent is disclosed which is a highly stable tetraorganosilicon compound allowing for a cross-coupling reaction under mild reaction conditions without using fluoride ions, transition metal promoter, or strong bases, and the residue of the silicon reagent can be recovered and reused. The silicon-based cross-coupling reagent is a silicon compound in which an o-hydroxymethylphenyl group is connected to a silicon atom for intramolecular activation.
摘要翻译：在本发明的一个实施方案中，公开了一种硅基交联偶联剂，其是高度稳定的四有机硅化合物，其允许在温和的反应条件下进行交叉偶联反应而不使用氟离子，过渡金属促进剂或强碱，以及可以回收和再利用硅试剂的残留物。硅基交联偶联剂是其中邻羟基甲基苯基连接到硅原子用于分子内活化的硅化合物。

8. 发明申请

US20080028132A1 Non-volatile storage device, data storage system, and data storage method 审中-公开
标题翻译：非易失性存储设备，数据存储系统和数据存储方法
公开(公告)号：US20080028132A1
公开(公告)日：2008-01-31
申请号：US11798679
申请日：2007-05-16
申请人： Masanori Matsuura , Yasushi Gohou , Shunichi Iwanari , Yoshiaki Nakao , Hisakazu Kotani , Junichi Kato , Satoshi Mishima , Motonobu Nishimura , Toshiki Mori
发明人： Masanori Matsuura , Yasushi Gohou , Shunichi Iwanari , Yoshiaki Nakao , Hisakazu Kotani , Junichi Kato , Satoshi Mishima , Motonobu Nishimura , Toshiki Mori
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/0804 , G06F13/1668 , G06F2212/7203 , G11C16/10
摘要： A non-volatile storage device comprises a non-volatile memory into which data is written per unit area, and a memory controller for controlling writing of data into the non-volatile memory. The memory controller comprises a first storage section for holding data input from the outside of the device, a first control section for writing data which is held by the first storage section and whose amount corresponds to the unit area, into the non-volatile memory in a unit area-by-unit area basis, and writing data which is held by the first storage section and whose amount is less than the unit area, into a second storage section, and a second control section for writing data held by the second storage section into the non-volatile memory.
摘要翻译：非易失性存储装置包括：每单位区域写入数据的非易失性存储器;以及用于控制将数据写入非易失性存储器的存储器控制器。存储器控制器包括用于保存从设备外部输入的数据的第一存储部分，用于将由第一存储部分保存并且其数量对应于单位区域的数据写入到非易失性存储器中的第一控制部分以单位面积为单位的区域，以及将由第一存储部保持的数量小于单位面积的写入数据写入到第二存储部中，以及第二控制部，用于写入由第二存储器部分进入非易失性存储器。

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