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    • 4. 发明授权
    • Memory access buffer and reordering apparatus using priorities
    • 使用优先级的存储器访问缓冲器和重新排序装置
    • US6145065A
    • 2000-11-07
    • US67899
    • 1998-04-29
    • Satoshi TakahashiHiroyuki YamauchiHironori AkamatsuKeiichi KusumotoToru IwataYutaka TeradaTakashi Hirata
    • Satoshi TakahashiHiroyuki YamauchiHironori AkamatsuKeiichi KusumotoToru IwataYutaka TeradaTakashi Hirata
    • G06F13/16G06F12/02
    • G06F13/1631
    • A current problem is that when a DRAM is to be accessed through a data bus, the DRAM is accessed independently of a bank, a row address, etc., and therefore, is inefficient. To solve this problem, an address bus and a data bus are connected to a main memory part independently of each other, a temporary memory part for holding a plurality of addresses in advance is disposed on the address bus side and holds addresses for every access to the main memory part regardless of transfer of data, thereby pipelining address inputting cycles. Further, for the purpose of an effective operation of the main memory part, using the addresses which are held, the addresses are rearranged in such a manner that addresses with the same row addresses become continuous to each other, or when there are not addresses with the same row addresses, addresses different banks from each other become continuous to each other, and the memory is thereafter accessed. This reduces the number of precharges, shortens a standby period which is necessary for a precharge, and realizes accessing while reducing a wasteful use of time.
    • 目前的问题在于,当通过数据总线访问DRAM时,独立于存储体,行地址等访问DRAM,因此是低效的。 为了解决这个问题,地址总线和数据总线彼此独立地连接到主存储器部分,预先存储多个地址的临时存储器部分设置在地址总线侧,并且保存地址以进行每次访问 主存储部分不管数据传输,从而流水线地址输入周期。 此外,为了主存储器部分的有效操作,使用所保存的地址,地址被重新排列,使得具有相同行地址的地址彼此连续,或者当没有地址与 相同的行地址,彼此不同的存储体彼此变得连续,并且此后访问存储器。 这减少了预充电次数,缩短了预充电所需的待机时间,并实现了访问,同时减少了浪费时间的使用。
    • 7. 发明授权
    • Semiconductor integrated circuit and semiconductor integrated circuit system having serially interconnectable data buses
    • 具有串行可互连数据总线的半导体集成电路和半导体集成电路系统
    • US06297675B1
    • 2001-10-02
    • US09478530
    • 2000-01-06
    • Hironori AkamatsuYutaka TeradaTakashi HirataYukio ArimaSatoshi TakahashiTadahiro YoshidaYoshihide KomatsuHiroyuki Yamauchi
    • Hironori AkamatsuYutaka TeradaTakashi HirataYukio ArimaSatoshi TakahashiTadahiro YoshidaYoshihide KomatsuHiroyuki Yamauchi
    • H03B100
    • H03K19/018514Y10T307/549
    • A data line pair and a strobe line pair are provided between first and second chips to exchange data therebetween. The first chip includes an output circuit and a controller for controlling the output circuit. The second chip includes an input circuit. For example, the output circuit supplies a direct current from a power supply to one of the data lines. Then, the input circuit feeds back the received current to the output circuit through a pair of terminal resistors and the other data line. Subsequently, the output circuit supplies the fed back direct current to one of the strobe lines. In response, the input circuit feeds back the received current again to the output circuit through another pair of terminal resistors and the other strobe line. And then the fed back current is drained to the ground. Thus, compared to driving the data and strobe line pairs separately with the same amount of current supplied, the current dissipation can be halved. In this manner, the present invention is applicable to reduction of current dissipation when data should be transmitted at high speeds through multiple data bus pairs that are driven with a current supplied.
    • 在第一和第二芯片之间提供数据线对和选通线对,以在它们之间交换数据。 第一芯片包括输出电路和用于控制输出电路的控制器。 第二芯片包括输入电路。 例如,输出电路将电流从电源提供给数据线之一。 然后,输入电路通过一对端子电阻和另一条数据线将接收的电流反馈到输出电路。 随后,输出电路将反馈的直流电流提供给选通线之一。 作为响应,输入电路通过另一对端子电阻器和另一个选通线路将接收到的电流再次反馈到输出电路。 然后将反馈电流排到地面。 因此,与以相同的电流量驱动数据和选通线对相比,电流消耗可以减半。 以这种方式,本发明可应用于当通过以所提供的电流驱动的多个数据总线对以高速传输数据时,减少电流消耗。
    • 10. 发明授权
    • Data holding circuit
    • 数据保持电路
    • US5757702A
    • 1998-05-26
    • US739363
    • 1996-10-29
    • Toru IwataHironori AkamatsuHiroyuki Yamauchi
    • Toru IwataHironori AkamatsuHiroyuki Yamauchi
    • G11C11/412G11C11/419G11C7/00
    • G11C11/419G11C11/412
    • A memory cell includes a first inverter and a second inverter connected with each other through the output node of one of the inverters and the input node of the other inverter, and first and second transistors. Each of the transistors connected with a word line at its gate electrode is interposed between one of a bit line pair and each memory node. This data holding circuit includes an element for increasing a memory cell supply potential for driving the pair of inverters to be higher than a supply potential applied to peripheral circuits, or an element for decreasing a ground voltage for driving the pair of inverters to be lower than a ground voltage applied to the peripheral circuits.
    • 存储单元包括通过其中一个反相器的输出节点和另一个反相器的输入节点以及第一和第二晶体管彼此连接的第一反相器和第二反相器。 在其栅电极处与字线连接的晶体管中的每一个插入在位线对和每个存储器节点之一之间。 该数据保持电路包括用于将用于驱动该对反相器的存储单元电源电位增加到高于施加到外围电路的电源电位的元件,或者用于将用于驱动该对反相器的接地电压降低到低于 施加到外围电路的接地电压。