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1. 发明授权

US4507458A Urethane acrylate compositions 失效
标题翻译：聚氨酯丙烯酸酯组合物
公开(公告)号：US4507458A
公开(公告)日：1985-03-26
申请号：US594480
申请日：1984-03-27
申请人： Hiroyuki Shiraki , Tetsuro Abe
发明人： Hiroyuki Shiraki , Tetsuro Abe
IPC分类号： C08G18/67 , C08G18/75 , C09D175/16 , C08G18/32
CPC分类号： C09D175/16 , C08G18/672 , C08G18/758 , Y10S428/90 , Y10T428/31551
摘要： A urethane acrylate resin obtained by reacting a polyisocyanate with a polyester polyol having a molecular weight of 500 to 3,000, a low-molecular-weight polyol having a molecular weight of 60 to 400 and a hydroxyalkyl acrylate containing at least 70 mole % of a monohydroxyalkyl acrylate at an NCO/OH equivalent ratio in the range of 0.7 to 1.20.The composition comprising the above urethane acrylate resin affords crosslinked products having extremely excellent, tough physical properties, and can therefore be advantageously employed, for example, for base coatings for paper and polyethylene films prior to vacuum metallizing, protective coatings after vacuum metallizing, covering materials for electromagnetic tapes and floppy discs, vehicles for printing ink, adhesives, etc.
摘要翻译：通过使多异氰酸酯与分子量为500〜3000的聚酯多元醇，分子量为60〜400的低分子量多元醇和含有至少70摩尔％的单羟基烷基的丙烯酸羟烷基酯反应得到的聚氨酯丙烯酸酯树脂丙烯酸酯，其NCO / OH当量比在0.7至1.20的范围内。包含上述聚氨酯丙烯酸酯树脂的组合物提供具有非常优异的韧性物理性能的交联产物，因此可以有利地用于例如真空金属化之前的纸和聚乙烯薄膜的基底涂层，真空金属化后的保护涂层，覆盖材料用于电磁磁带和软盘，用于印刷油墨，粘合剂等的车辆

2. 发明申请

US20050130452A1 Production method for silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US20050130452A1
公开(公告)日：2005-06-16
申请号：US11053440
申请日：2005-02-09
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/322 , H01L21/324 , H01L21/66
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N 2分解温度的氮化物气体，使得热退火在较低温度或短时间内进行，以抑制滑动的产生并提供令人满意的表面粗糙度。

3. 发明授权

US4898922A Urethane resins 失效
标题翻译：聚氨酯树脂
公开(公告)号：US4898922A
公开(公告)日：1990-02-06
申请号：US253863
申请日：1988-10-05
申请人： Hiroyuki Shiraki
发明人： Hiroyuki Shiraki
IPC分类号： C08G18/12 , G11B5/702
CPC分类号： G11B5/7021 , C08G18/12
摘要： Urethane resin having hydrophilic polar groups (mercapto groups) shows excellent dispersibility of magnetic powder when used as a binder for magnetic recording media. Magnetic recording media prepared by using the binder are excellent in surface-smoothness and durability. The mercapto groups contained in the magnetic layer react with isocyanate groups in the polyisocyanate to form thiourethane bonds to leave no hydrophilic polar groups, i.e., mercapto groups, and thus is excellent in moisture- and heat-resistance as well.The resin and the binding agent are advantageously used in the production of magnetic recording media, for example, magnetic tape, magnetic disc, etc.

4. 发明授权

US06534774B2 Method and apparatus for evaluating the quality of a semiconductor substrate 有权
标题翻译：用于评估半导体衬底的质量的方法和装置
公开(公告)号：US06534774B2
公开(公告)日：2003-03-18
申请号：US09815208
申请日：2001-03-22
申请人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
发明人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
IPC分类号： G01N2164
CPC分类号： G01N21/6489 , G01N21/6408
摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time &tgr; of the semiconductor substrate from an expression “&tgr;=T/C”, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.
摘要翻译：激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算半导体衬底的寿命τ 表达式“tau = T / C”，其中C是常数。本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。

5. 发明申请

US20090127746A1 HEAT TREATMENT JIG AND HEAT TREATMENT METHOD FOR SILICON WAFER 有权
标题翻译：热处理加热和硅热处理方法
公开(公告)号：US20090127746A1
公开(公告)日：2009-05-21
申请号：US12339118
申请日：2008-12-19
申请人： Yoshinobu NAKADA , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu NAKADA , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： B29C71/02
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

6. 发明授权

US06979493B2 Gas barrier polyurethane resin 有权
标题翻译：防气聚氨酯树脂
公开(公告)号：US06979493B2
公开(公告)日：2005-12-27
申请号：US10410273
申请日：2003-04-10
申请人： Takashi Uchida , Tsutomu Tawa , Hiroyuki Shiraki
发明人： Takashi Uchida , Tsutomu Tawa , Hiroyuki Shiraki
IPC分类号： B32B27/40 , C08G18/08 , C08G18/12 , C08G18/32 , C08G18/74 , C08G18/75 , C08G18/76 , C08J5/18 , C08K5/5415 , C08K7/00 , C08L75/04 , B32B27/06 , B32B27/10 , B32B27/12
CPC分类号： C08J5/18 , C08G18/0823 , C08G18/12 , C08G18/3206 , C08G18/758 , C08G18/7642 , C08J2375/04 , Y10T428/31551 , Y10T428/31591 , Y10T428/31598 , Y10T428/31605 , Y10T428/31609 , C08G18/3228
摘要： A polyurethane resin having a total concentration of the urethane group and the urea group of not less than 15% by weight is prepared by reacting a diisocyanate component (e.g., an aromatic diisocyanate) with a diol component (e.g., a C2–8alkylene glycol). The repeating unit of the polyurethane resin may contain a constitutive unit of an aromatic or alicyclic compound. The polyurethane resin may be shaped into a film for use as a gas barrier film. The film may be a gas barrier composite film composed of a base film layer and a resin layer at least comprising the polyurethane resin. The present invention provides a polyurethane resin excellent in gas barrier properties against water vapor, oxygen, aromatics, and others, and a film containing the same.
摘要翻译：通过使二异氰酸酯成分（例如芳香族二异氰酸酯）与二醇成分（例如C 2-8亚烷基二醇）反应，制备氨基甲酸酯基和脲基的总浓度为15重量％以上的聚氨酯树脂，。聚氨酯树脂的重复单元可以含有芳族或脂环族化合物的组成单元。聚氨酯树脂可以成形为用作阻气膜的膜。该膜可以是由至少包含聚氨酯树脂的基膜层和树脂层构成的阻气性复合膜。本发明提供了对水蒸气，氧气，芳烃等的阻气性优异的聚氨酯树脂和含有该聚氨酯树脂的膜。

7. 发明授权

US06881788B2 Polyurethane resin water dispersion and aqueous polyurethane adhesive 有权
标题翻译：聚氨酯树脂水分散体和水性聚氨酯胶粘剂
公开(公告)号：US06881788B2
公开(公告)日：2005-04-19
申请号：US10218656
申请日：2002-08-15
申请人： Hyoue Shimizu , Hiroyuki Shiraki
发明人： Hyoue Shimizu , Hiroyuki Shiraki
IPC分类号： C08G18/65 , C08G18/00 , C08G18/08 , C08G18/12 , C08G18/32 , C08G18/42 , C08G18/66 , C09J175/04
CPC分类号： C08G18/6659 , C08G18/0823 , C08G18/12 , C08G18/4277 , C08G2170/80 , Y10S528/905 , C08G18/3271
摘要： Polyurethane resin water dispersion being good in storage stability and excellent in initial adhesion and resistance to moist heat, and aqueous polyurethane adhesive employing the polyurethane resin water dispersion. The polyurethane resin water dispersion is produced in the manner that polyisocyanate is allowed to react with polycaprolactone polyol comprising polycaprolactone polyol having a number average molecular weight of not less than 3,000 and active-hydrogen-group-containing compound having anionic group, to synthesize isocyanate terminated prepolymer, first, and, then, the isocyanate terminated prepolymer thus produced is allowed to react with polyamine in water. The use of the polyurethane resin water dispersion can produce the aqueous polyurethane adhesive having improved storage stability, initial adhesion and resistance to moist heat.
摘要翻译：聚氨酯树脂水分散体具有良好的储存稳定性，初始粘合性和耐湿热性优异，使用聚氨酯树脂水分散体的水性聚氨酯粘合剂。以聚异氰酸酯与包含数均分子量不小于3,000的聚己内酯多元醇和含有含阴离子基团的含活性氢基化合物的聚己内酯多元醇反应的方式制备聚氨酯树脂水分散体，以合成异氰酸酯封端预聚物，然后，然后将如此制备的异氰酸酯封端的预聚物与多胺在水中反应。使用聚氨酯树脂水分散体可以生产具有改善的储存稳定性，初始粘合性和耐湿热性的水性聚氨酯粘合剂。

8. 发明授权

US06547875B1 Epitaxial wafer and a method for manufacturing the same 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US06547875B1
公开(公告)日：2003-04-15
申请号：US09668850
申请日：2000-09-25
申请人： Ken Nakajima , Tamiya Karashima , Hiroyuki Shiraki
发明人： Ken Nakajima , Tamiya Karashima , Hiroyuki Shiraki
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/203 , C30B25/20 , H01L21/3225
摘要： A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.
摘要翻译：本发明的晶片是用于沉积外延层的电阻率为0.02欧姆·厘米或更小的硅晶片，并且晶体起始粒子（COP）的数量和间隙型大位错环（L / D）的数量分别为每片晶片为0〜10。本发明的晶片是通过CVD法在该晶片上形成的外延层的外延层的电阻率为0.1Ω/ cm以上，厚度为0.5〜5μm的外延层。当形成外延层时，本发明的晶片是无OSF的，并且几乎不产生COP和L / D的痕迹出现在外延层的表面上。通过在形成外延层之后的半导体器件制造工艺中的热处理，BMD在晶片中的密度均匀且高度地发生，并且可以在晶片中获得均匀的IG效应。

9. 发明授权

US06239215B1 Powder coating composition 有权
标题翻译：粉末涂料组合物
公开(公告)号：US06239215B1
公开(公告)日：2001-05-29
申请号：US09274337
申请日：1999-03-23
申请人： Hirokazu Morita , Tatsuo Fujii , Hiroyuki Shiraki
发明人： Hirokazu Morita , Tatsuo Fujii , Hiroyuki Shiraki
IPC分类号： C09D503
CPC分类号： C09D5/03 , C09D5/031
摘要： A powder coating composition comprising a multilayer polymer particle, in which at least one inner layer is a polymer layer having a glass transition temperature (Tg) of not over 20° C. and the outermost layer is a polymer layer having a Tg of not less than 60° C. and, the monomer components forming the polymer layer having a Tg of not over 20° C. are those having an unsaturated double bond in the molecule, and among the monomer components, a crosslinking monomer and a grafting monomer are used, respectively, within the ranges of 0.3 to 5 weight % and of 1 to 10 weight %, is dispersed in an amount of 1 to 30 parts by weight per 100 parts by weight of the total components other than the multilayer polymer particle can show excellent dispersibility to various powder coatings and can improve workability and impact resistance of a coat film while maintaining inherent characteristics of a powder coating such as appearance of a coat film and an anti-blocking property.
摘要翻译：一种粉末涂料组合物，其包含多层聚合物颗粒，其中至少一层内层是玻璃化转变温度（Tg）不超过20℃的聚合物层，最外层是Tg不低于 60℃以上，形成Tg不高于20℃的聚合物层的单体成分是分子中具有不饱和双键的单体成分，单体成分中使用交联单体和接枝单体分别在0.3〜5重量％和1〜10重量％的范围内，相对于多层聚合物粒子以外的总成分100重量份，以1〜30重量份的量分散，能够显示优异的可分散到各种粉末涂料中，并且可以提高涂膜的可加工性和抗冲击性，同时保持涂层的外观和防粘连性等粉末涂料的固有特性。

10. 发明授权

US07521381B2 Method for producing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的制造方法
公开(公告)号：US07521381B2
公开(公告)日：2009-04-21
申请号：US10432861
申请日：2001-11-28
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/26 , H01L21/42 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

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