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1. 发明申请

US20050195041A1 Semiconductor integrated circuit device 失效
公开(公告)号：US20050195041A1
公开(公告)日：2005-09-08
申请号：US11124060
申请日：2005-05-09
申请人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H01L27/092 , H01L27/105 , H03L7/00
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K3/011 , H03K3/0315 , H03K19/0016
摘要： A semiconductor integrated circuit device comprising a logical circuit including a MIS transistor formed on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor forming the logical circuit, an oscillation circuit including a MIS transistor formed on the semiconductor substrate, the oscillation circuit being constructed so that the frequency of an oscillation output thereof can be made variable, and a buffer circuit, in which the control circuit is supplied with a clock signal having a predetermined frequency and the oscillation output of the oscillation circuit so that the control circuit compares the frequency of the oscillation output and the frequency of the clock signal to output a first control signal, the oscillation circuit is controlled by the first control signal so that the frequency of the oscillation output corresponds to the frequency of the clock signal, the control of the frequency of the oscillation output being performed in such a manner that the first control signal controls a threshold voltage of the MIS transistor forming the oscillation circuit, and the buffer circuit is constructed so that it is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor forming the logical circuit.

2. 发明授权

US06489824B2 Timing-control circuit device and clock distribution system 有权
公开(公告)号：US06489824B2
公开(公告)日：2002-12-03
申请号：US09935717
申请日：2001-08-24
申请人： Masayuki Miyazaki , Koichiro Ishibashi , Takeshi Sakata , Satoru Hanzawa , Hiroyuki Mizuno , Kiyoshi Hasegawa , Masaru Kokubo , Hirokazu Aoki
发明人： Masayuki Miyazaki , Koichiro Ishibashi , Takeshi Sakata , Satoru Hanzawa , Hiroyuki Mizuno , Kiyoshi Hasegawa , Masaru Kokubo , Hirokazu Aoki
IPC分类号： H03L706
CPC分类号： H04L7/0008 , G06F1/10 , H03K5/135 , H04L7/0037
摘要： A timing-control circuit device, which uses a synchronous mirror delay circuit, for keeping the synchronization between clock signals in phase even at a load change. A reference clock signal (clkin 11) is entered to a timing-control circuit (SMDF 14) and used to generate an internal clock (dclk 12), then generates an external clock (clkout 13) through a buffer (BUF 15). The external clock signal is fed back to the timing-control circuit (SMDF 14) and used to generate an internal clock signal so as to synchronize the external clock signal in phase with the reference clock signal. The timing-control circuit is provided with a circuit (FDA 21, MCC 22) for detecting a phase difference between the internal clock signal and the external clock signal, as well as a delay circuit (DCL 24) for controlling a delay time, so that the delay circuit (DCL 24) can change the delay time according to the detected phase difference.

3. 发明授权

US07518404B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07518404B2
公开(公告)日：2009-04-14
申请号：US11970370
申请日：2008-01-07
申请人： Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H03K3/01
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K3/011 , H03K3/0315 , H03K19/0016
摘要： A semiconductor device which includes a frequency-variable oscillation circuit including plural inverters, each of which features a PMOS transistor and a NMOS transistor, a first substrate bias generator including a first phase/frequency compare circuit that compares an output signal from the frequency-variable oscillation circuit with a reference clock signal and generating a first substrate bias voltage in response thereto, the first substrate bias voltage being supplied to substrates of the PMOS transistors in the oscillation circuit, and a second substrate bias generator including a second phase/frequency compare circuit that compares the output signal from the frequency-variable oscillation circuit with the reference clock and generating a second substrate bias voltage in response thereto, the second substrate bias voltage being supplied to substrates of the NMOS transistors in the oscillation circuit.
摘要翻译：一种半导体器件，包括具有多个反相器的频率可变振荡电路，每个反相器具有PMOS晶体管和NMOS晶体管，第一衬底偏置发生器包括第一相位/频率比较电路，其比较来自频率变量具有参考时钟信号的振荡电路，并响应于此产生第一衬底偏置电压，第一衬底偏置电压被提供给振荡电路中的PMOS晶体管的衬底，第二衬底偏置发生器包括第二相/频率比较电路其将来自频率可变振荡电路的输出信号与参考时钟进行比较，并响应于此产生第二衬底偏置电压，第二衬底偏置电压被提供给振荡电路中的NMOS晶体管的衬底。

4. 发明授权

US07138852B2 Semiconductor integrated circuit device 失效
公开(公告)号：US07138852B2
公开(公告)日：2006-11-21
申请号：US10911664
申请日：2004-08-05
申请人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
发明人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
IPC分类号： H03K3/01
CPC分类号： H03K19/00323 , H03K19/00384 , H03K19/018585
摘要： A semiconductor integrated circuit device includes a logic circuit to perform a predetermined process, a clock generator to supply a clock signal to the logic circuit, and a speed controller to control the operation speed of the logic circuit. The clock generator changes the frequency of the clock signal by a frequency control signal during a time when the logic circuit is operating, and the speed controller controls the operating speed of the logic circuit in accordance with a change in the clock signal.

5. 发明授权

US06489833B1 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US06489833B1
公开(公告)日：2002-12-03
申请号：US09486057
申请日：2000-02-22
申请人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
发明人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
IPC分类号： H03K301
CPC分类号： H03K19/00323 , H03K19/00384 , H03K19/018585
摘要： A semiconductor integrated circuit device includes a logic circuit, a digital-to-analog converter generating a substrate bias for controlling a threshold voltage of an MIS transistor of the logic circuit, a voltage control circuit outputting a control signal in accordance with a delay signal, and a delay detector, including a circuit which monitors variations in operating speed of the delay detector. The delay detector receives the clock signal and outputs the delay signal. The voltage control circuit receives the delay signal and outputs the control signal according to a delay indicated by the delay signal. The digital-to-analog converter receives the control signal from the voltage control circuit and generates a voltage according to the control signal. The operating speed of each of the logic circuits and the delay detector is controlled by a voltage supplied from the digital-to-analog converter.
摘要翻译：半导体集成电路器件包括逻辑电路，产生用于控制逻辑电路的MIS晶体管的阈值电压的衬底偏置的数模转换器，根据延迟信号输出控制信号的电压控制电路，以及延迟检测器，包括监视延迟检测器的操作速度变化的电路。延迟检测器接收时钟信号并输出延迟信号。电压控制电路接收延迟信号，并根据由延迟信号表示的延迟输出控制信号。数模转换器接收来自电压控制电路的控制信号，并根据控制信号产生电压。每个逻辑电路和延迟检测器的工作速度由数模转换器提供的电压控制。

6. 发明授权

US6140686A Semiconductor integrated circuit device 失效
公开(公告)号：US6140686A
公开(公告)日：2000-10-31
申请号：US979947
申请日：1997-11-26
申请人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H01L27/092 , H01L27/105 , H01L27/10
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K19/0016 , H03K3/011 , H03K3/0315
摘要： A semiconductor integrated circuit device comprising a logical circuit including a MIS transistor formed on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor forming the logical circuit, an oscillation circuit including a MIS transistor formed on the semiconductor substrate, the oscillation circuit being constructed so that the frequency of an oscillation output thereof can be made variable, and a buffer circuit, in which the control circuit is supplied with a clock signal having a predetermined frequency and the oscillation output of the oscillation circuit so that the control circuit compares the frequency of the oscillation output and the frequency of the clock signal to output a first control signal, the oscillation circuit is controlled by the first control signal so that the frequency of the oscillation output corresponds to the frequency of the clock signal, the control of the frequency of the oscillation output being performed in such a manner that the first control signal controls a threshold voltage of the MIS transistor forming the oscillation circuit, and the buffer circuit is constructed so that it is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor forming the logical circuit.

7. 发明申请

US20080116934A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20080116934A1
公开(公告)日：2008-05-22
申请号：US11970370
申请日：2008-01-07
申请人： Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H03K3/01
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K3/011 , H03K3/0315 , H03K19/0016
摘要： A semiconductor device which includes a frequency-variable oscillation circuit including plural inverters, each of which features a PMOS transistor and a NMOS transistor, a first substrate bias generator including a first phase/frequency compare circuit that compares an output signal from the frequency-variable oscillation circuit with a reference clock signal and generating a first substrate bias voltage in response thereto, the first substrate bias voltage being supplied to substrates of the PMOS transistors in the oscillation circuit, and a second substrate bias generator including a second phase/frequency compare circuit that compares the output signal from the frequency-variable oscillation circuit with the reference clock and generating a second substrate bias voltage in response thereto, the second substrate bias voltage being supplied to substrates of the NMOS transistors in the oscillation circuit.
摘要翻译：一种半导体器件，包括具有多个反相器的频率可变振荡电路，每个反相器具有PMOS晶体管和NMOS晶体管，第一衬底偏置发生器包括第一相位/频率比较电路，其比较来自频率变量具有参考时钟信号的振荡电路，并响应于此产生第一衬底偏置电压，第一衬底偏置电压被提供给振荡电路中的PMOS晶体管的衬底，第二衬底偏置发生器包括第二相/频率比较电路其将来自频率可变振荡电路的输出信号与参考时钟进行比较，并响应于此产生第二衬底偏置电压，第二衬底偏置电压被提供给振荡电路中的NMOS晶体管的衬底。

8. 发明申请

US20070063735A1 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US20070063735A1
公开(公告)日：2007-03-22
申请号：US11526612
申请日：2006-09-26
申请人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H03K19/0175
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K3/011 , H03K3/0315 , H03K19/0016
摘要： A semiconductor integrated circuit device which includes a logical circuit containing a MIS transistor on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor in the logical circuit, an oscillation circuit containing a MIS transistor on the semiconductor substrate, and a buffer circuit, the control circuit compares the frequency of the oscillation output and frequency of a clock signal to output a first control signal, the first control signal controls a threshold voltage of the MIS transistor of the oscillation circuit, and the buffer circuit is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor of the logical circuit.
摘要翻译：一种半导体集成电路器件，包括在半导体衬底上包含MIS晶体管的逻辑电路，用于控制逻辑电路中的MIS晶体管的阈值电压的控制电路，在半导体衬底上包含MIS晶体管的振荡电路，以及缓冲电路，控制电路比较振荡输出的频率和时钟信号的频率，输出第一控制信号，第一控制信号控制振荡电路的MIS晶体管的阈值电压，缓冲电路输入所述第一控制信号输出对应于所述第一控制信号的第二控制信号，所述第二控制信号控制所述逻辑电路的所述MIS晶体管的阈值电压。

9. 发明授权

US07112999B2 Semiconductor integrated circuit device 失效
公开(公告)号：US07112999B2
公开(公告)日：2006-09-26
申请号：US11124060
申请日：2005-05-09
申请人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
发明人： Hiroyuki Mizuno , Masataka Minami , Koichiro Ishibashi , Masayuki Miyazaki
IPC分类号： H03K3/01
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H03K3/011 , H03K3/0315 , H03K19/0016
摘要： A semiconductor integrated circuit device comprising a logical circuit including a MIS transistor formed on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor forming the logical circuit, an oscillation circuit including a MIS transistor formed on the semiconductor substrate, the oscillation circuit being constructed so that the frequency of an oscillation output thereof can be made variable, and a buffer circuit, in which the control circuit is supplied with a clock signal having a predetermined frequency and the oscillation output of the oscillation circuit so that the control circuit compares the frequency of the oscillation output and the frequency of the clock signal to output a first control signal, the oscillation circuit is controlled by the first control signal so that the frequency of the oscillation output corresponds to the frequency of the clock signal, the control of the frequency of the oscillation output being performed in such a manner that the first control signal controls a threshold voltage of the MIS transistor forming the oscillation circuit, and the buffer circuit is constructed so that it is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor forming the logical circuit.

10. 发明申请

US20050007183A1 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US20050007183A1
公开(公告)日：2005-01-13
申请号：US10911664
申请日：2004-08-05
申请人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
发明人： Masayuki Miyazaki , Koichiro Ishibashi , Hiroyuki Mizuno
IPC分类号： H03K3/01 , H03K19/003 , H03K19/0185
CPC分类号： H03K19/00323 , H03K19/00384 , H03K19/018585
摘要： A semiconductor integrated circuit device includes a logic circuit to perform a predetermined process, a clock generator to supply a clock signal to the logic circuit, and a speed controller to control the operation speed of the logic circuit. The clock generator changes the frequency of the clock signal by a frequency control signal during a time when the logic circuit is operating, and the speed controller controls the operating speed of the logic circuit in accordance with a change in the clock signal.
摘要翻译：半导体集成电路器件包括执行预定处理的逻辑电路，向逻辑电路提供时钟信号的时钟发生器以及控制逻辑电路的操作速度的速度控制器。在逻辑电路工作时，时钟发生器通过频率控制信号来改变时钟信号的频率，速度控制器根据时钟信号的变化来控制逻辑电路的工作速度。

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