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1. 发明授权

US07374646B2 Electrolytic processing apparatus and substrate processing method 失效
标题翻译：电解处理装置及基板处理方法
公开(公告)号：US07374646B2
公开(公告)日：2008-05-20
申请号：US10767253
申请日：2004-01-30
申请人： Hidenao Suzuki , Kazufumi Nomura , Kunihito Ide , Hiroyuki Kanda , Koji Mishima , Naoki Mihara , Natsuki Makino , Seiji Katsuoka
发明人： Hidenao Suzuki , Kazufumi Nomura , Kunihito Ide , Hiroyuki Kanda , Koji Mishima , Naoki Mihara , Natsuki Makino , Seiji Katsuoka
IPC分类号： C25D17/00 , C25D17/02 , C25D17/06 , C25D7/12
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , H01L21/76877
摘要： The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate. The electrolytic processing apparatus of this invention includes: a substrate holder for holding a substrate, a first electrode for being brought into contact with the substrate to supply current to a surface, to be processed, of the substrate; a second electrode disposed substantially parallel to the surface, to be processed, of the substrate in a position facing the surface, to be processed, of the substrate held by the substrate holder; a high resistance structure disposed between the substrate held by the substrate holder and the second electrode; an electrolytic solution introducing portion for introducing an electrolytic solution into a region across which the substrate held by the substrate holder and the high resistance structure face each other, from laterally of the high resistance structure; and a power source for applying a voltage between the first electrode and the second electrode.
摘要翻译：本发明提供一种电解处理装置，其能够通过使基板的整个表面上的电场分布更均匀，从而提高镀膜的膜厚的面内均匀性，大面积，并且在基板的整个待处理表面上更均匀地控制速度。本发明的电解处理装置包括：用于保持基板的基板保持器，用于与基板接触的第一电极，以将基板的待加工表面供给电流; 基板平行于被处理面的基板平面的第二电极，所述第一电极与所述基板保持器保持的所述基板面对所述要被处理的表面的位置; 设置在由衬底保持器保持的衬底和第二电极之间的高电阻结构; 电解液引入部分，用于将电解溶液引入到由所述衬底保持器保持的所述衬底和所述高电阻结构面对的区域中，从所述高电阻结构的侧面引出; 以及用于在第一电极和第二电极之间施加电压的电源。

2. 发明申请

US20080035171A1 Cleaning method and cleaning apparatus for porous member 审中-公开
标题翻译：多孔构件的清洗方法和清洁装置
公开(公告)号：US20080035171A1
公开(公告)日：2008-02-14
申请号：US11826275
申请日：2007-07-13
申请人： Hiroyuki Kanda , Natsuki Makino , Kazufumi Nomura
发明人： Hiroyuki Kanda , Natsuki Makino , Kazufumi Nomura
IPC分类号： C23G1/02
CPC分类号： B08B3/12 , B08B7/00
摘要： A porous member cleaning method enables effective cleaning of the interior of a porous member even when it has a small pore size, a high density and a large volume. The porous member cleaning method includes: disposing a porous member in a hermetic space, and cleaning the interior of the porous member with a pressurized cleaning liquid passing through the interior of the porous member; and then disposing the porous member in said hermetic space or in a different hermetic space, and supplying pressurized pure water to the interior of the porous member so that the pure water passes through the interior of the porous member.
摘要翻译：多孔构件清洁方法即使具有小孔径，高密度和大体积也能有效地清洁多孔构件的内部。多孔构件清洁方法包括：将多孔构件设置在密封空间中，并且通过穿过多孔构件内部的加压清洗液清洁多孔构件的内部; 然后将多孔构件设置在所述密封空间或不同的密封空间中，并将加压的纯水供应到多孔构件的内部，使得纯水通过多孔构件的内部。

3. 发明申请

US20050023149A1 Plating apparatus, plating method and substrate processing apparatus 审中-公开
标题翻译：电镀装置，电镀方法和基板处理装置
公开(公告)号：US20050023149A1
公开(公告)日：2005-02-03
申请号：US10860115
申请日：2004-06-04
申请人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
发明人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
IPC分类号： C25D5/00 , C25D7/12 , C25D17/06
CPC分类号： C25D17/001 , C25D7/123 , C25D17/06
摘要： The present invention provides a plating apparatus which uses an insoluble anode and which can perform plating of a substrate stably while preventing oxygen gas, generated due to the use of the insoluble anode, from causing defects in the substrate. The plating apparatus includes: a substrate holder for holding a substrate; a cathode section including a seal ring for contacting a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder to seal the peripheral portion water-tightly, and a cathode for contacting the substrate to supply current to the substrate; a vertically-movable electrode head provided above the cathode section, including an anode chamber housing an anode made of an insoluble material and having a bottom opening closed with a water-permeable porous member; a plating solution injection section for injecting a plating solution between the anode and the surface, to be plated, of the substrate held by the substrate holder; a power source for applying a plating voltage between the cathode and the anode; and a gas discharge line for discharging a gas from the anode chamber.
摘要翻译：本发明提供一种电镀装置，其使用不溶性阳极，并且可以在防止由于使用不溶性阳极而产生的氧气导致基板中的缺陷的同时稳定地进行基板的电镀。电镀装置包括：用于保持基板的基板保持件; 阴极部分，包括用于接触被基板保持器保持的基板的周边部分的密封环，以密封周边部分，以及用于接触基板以向基板供应电流的阴极 ; 设置在所述阴极部分上方的可垂直移动的电极头，包括容纳由不溶性材料制成的阳极并且具有用透水性多孔构件封闭的底部开口的阳极室; 电镀溶液注入部，用于在被基板保持器保持的基板的阳极和要被电镀的表面之间注入电镀液; 用于在阴极和阳极之间施加电镀电压的电源; 以及用于从阳极室排出气体的气体排出管线。

4. 发明授权

US06767437B2 Electroplating apparatus and electroplating method 失效
标题翻译：电镀设备和电镀方法
公开(公告)号：US06767437B2
公开(公告)日：2004-07-27
申请号：US09860514
申请日：2001-05-21
申请人： Tetsuo Matsuda , Hisashi Kaneko , Koji Mishima , Natsuki Makino , Junji Kunisawa
发明人： Tetsuo Matsuda , Hisashi Kaneko , Koji Mishima , Natsuki Makino , Junji Kunisawa
IPC分类号： C25D1700
CPC分类号： C25D17/001 , Y10S204/07
摘要： In an electroplating apparatus, an electrolytic agent is filled into the portion between an anode and a dummy cathode which is opposite substantially face to face and parallel to the anode, and an electric current is supplied to this portion, thereby suppressing changes in properties of a black film during the period in which plating to a substrate to be processed is stopped. In particular, by applying an electric current to the anode immediately before plating to the substrate is resumed, the film formation characteristics of plating to the substrate can be maximally stabilized. This can reduce the consumption power and dissolution of the anode. This apparatus is particularly effective in copper plating in which the formation of a black film is significant.
摘要翻译：在电镀装置中，电解质被填充到阳极和虚拟阴极之间的与阳极基本上面对并且平行的方向相反的部分中，并且向该部分提供电流，从而抑制了在停止对待处理的基板的电镀期间的黑色膜。特别地，通过在电镀到基板之前立即向阳极施加电流，电镀到基板的成膜特性可以最大程度地稳定。这可以降低阳极的消耗功率和溶解度。该装置在形成黑色膜的铜电镀中特别有效。

5. 发明授权

US06746589B2 Plating method and plating apparatus 失效
公开(公告)号：US06746589B2
公开(公告)日：2004-06-08
申请号：US09955115
申请日：2001-09-19
申请人： Koji Mishima , Hiroaki Inoue , Natsuki Makino , Junji Kunisawa , Kenji Nakamura , Tetsuo Matsuda , Hisashi Kaneko , Toshiyuki Morita
发明人： Koji Mishima , Hiroaki Inoue , Natsuki Makino , Junji Kunisawa , Kenji Nakamura , Tetsuo Matsuda , Hisashi Kaneko , Toshiyuki Morita
IPC分类号： C25D500
CPC分类号： H01L21/2885 , C25D5/04 , C25D5/08 , C25D21/12 , H01L21/7684 , H01L21/76877
摘要： The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

6. 发明申请

US20130015582A1 CIRCUIT BOARD, SEMICONDUCTOR DEVICE, PROCESS FOR MANUFACTURING CIRCUIT BOARD AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：电路板，半导体器件，制造电路板的工艺和制造半导体器件的工艺
公开(公告)号：US20130015582A1
公开(公告)日：2013-01-17
申请号：US13637296
申请日：2011-02-24
申请人： Masayoshi Kondo , Natsuki Makino , Daisuke Fujiwara , Yuka Ito
发明人： Masayoshi Kondo , Natsuki Makino , Daisuke Fujiwara , Yuka Ito
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L23/49816 , H01L23/49811 , H01L23/49827 , H01L2924/0002 , H05K3/285 , H05K2201/068 , H05K2201/09136 , H01L2924/00
摘要： A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.
摘要翻译：电路板（1）在25℃至其玻璃化转变点的温度范围内，沿着基板表面的方向显示第一绝缘层（21）的平均热膨胀系数（A）在3ppm /℃以上且30ppm /℃以下的温度范围内。另外，第二绝缘层（23）的沿着基板表面的方向的平均热膨胀系数（B）在 25℃至其玻璃化转变点相当于在25℃至其玻璃化转变点的温度范围内沿着衬底表面的方向上的第三绝缘层（25）的平均热膨胀系数（C）。（B）和（C）大于（A），（A）和（B）之间的差异以及（A）和（C）之间的差异等于或高于5ppm /℃。至35ppm /℃以下

7. 发明授权

US08038136B2 Hand having rocking mechanism and substrate delivering device having the same 有权
标题翻译：具有摇摆机构的手和具有该摆动机构的基板输送装置
公开(公告)号：US08038136B2
公开(公告)日：2011-10-18
申请号：US12407826
申请日：2009-03-20
申请人： Hiroki Sanemasa , Hideo Yamamoto , Naoomi Torii , Takahiro Ogawa , Seiji Katsuoka , Hidetaka Nakao , Natsuki Makino
发明人： Hiroki Sanemasa , Hideo Yamamoto , Naoomi Torii , Takahiro Ogawa , Seiji Katsuoka , Hidetaka Nakao , Natsuki Makino
IPC分类号： H01L21/683 , B65G49/07 , B23Q3/18
CPC分类号： H01L21/68707 , Y10S414/141
摘要： A hand 1 is constituted by a hand base 4 serving as a base portion, a rocking hand 3 disposed to be superposed on the hand base 4 and serving to support a substrate 2, and a rocking mechanism 5 provided between the hand base 4 and the rocking hand 3 and serving to support the rocking hand 3 to be tiltable and movable in parallel with respect to the hand base 4.
摘要翻译：手1由用作基部的手持基座4，摆放在手基座4上并用于支撑基板2的摆动手3构成，摆动机构5设置在手持基座4和手柄基座4之间。摆动手3并且用于支撑摇摆手3以相对于手基座4平行地倾斜和移动。

8. 发明授权

US07387717B2 Method of performing electrolytic treatment on a conductive layer of a substrate 失效
标题翻译：在基板的导电层上进行电解处理的方法
公开(公告)号：US07387717B2
公开(公告)日：2008-06-17
申请号：US10631726
申请日：2003-08-01
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D7/12
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。密封材料90接触表面的周缘部分，以水密的方式密封该部分。阴极电极88在与基板接触时通过电流。阴极部38与基板保持部36一体地旋转。电极臂部30在阴极部38的上方，水平且垂直地移动，阳极98面朝下。将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。因此，电镀处理和附带的处理可以通过单个单元进行。

9. 发明授权

US07208074B2 Substrate processing apparatus and substrate plating apparatus 失效
标题翻译：基板处理装置和基板电镀装置
公开(公告)号：US07208074B2
公开(公告)日：2007-04-24
申请号：US10742390
申请日：2003-12-22
申请人： Koji Mishima , Junji Kunisawa , Natsuki Makino , Norio Kimura , Hiroaki Inoue , Kenji Nakamura , Moriji Matsumoto , Takahiro Nanjo , Mitsuko Odagaki
发明人： Koji Mishima , Junji Kunisawa , Natsuki Makino , Norio Kimura , Hiroaki Inoue , Kenji Nakamura , Moriji Matsumoto , Takahiro Nanjo , Mitsuko Odagaki
IPC分类号： C25C28/00 , C25D5/10
CPC分类号： H01L21/67109 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67778 , H01L21/681
摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.
摘要翻译：基板处理装置以限定在半导体基板中的精细互连图案或沟槽中填充诸如铜等的金属。基板处理装置具有用于放置基板盒以装载和卸载基板的装载/卸载单元，用于处理基板的基板处理单元，以及用于在装载/卸载单元和卸载单元之间传送基板的传送机器人底物处理单元。装载/卸载单元，基板处理单元和传送机器人安装在单个设施中。装载/卸载单元具有可水平旋转的旋转台，用于将基板盒定位在检测装载/卸载单元中的基板盒的位置，并用传送机器人从基板盒移除基板。

10. 发明授权

US08795032B2 Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method 有权
标题翻译：基板处理装置，基板处理方法，基板保持机构和基板保持方法
公开(公告)号：US08795032B2
公开(公告)日：2014-08-05
申请号：US12457175
申请日：2009-06-03
申请人： Mitsuru Miyazaki , Seiji Katsuoka , Naoki Matsuda , Junji Kunisawa , Kenichi Kobayashi , Hiroshi Sotozaki , Hiroyuki Shinozaki , Osamu Nabeya , Shinya Morisawa , Takahiro Ogawa , Natsuki Makino
发明人： Mitsuru Miyazaki , Seiji Katsuoka , Naoki Matsuda , Junji Kunisawa , Kenichi Kobayashi , Hiroshi Sotozaki , Hiroyuki Shinozaki , Osamu Nabeya , Shinya Morisawa , Takahiro Ogawa , Natsuki Makino
IPC分类号： B24B51/00
CPC分类号： B24B37/345 , H01L21/30625 , H01L21/67219 , H01L21/67739 , H01L21/67742 , H01L21/67754 , Y10T137/0318 , Y10T137/8593
摘要： An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.
摘要翻译：公开了一种用于处理衬底的设备。该装置包括：抛光部，其被配置为对基板进行抛光;移动机构，被配置为传送基板;以及清洁部，其构造成清洁和干燥被研磨的基板。清洗部具有多个用于清洗多个基板的清洗线。多个清洁线具有多个清洁模块和用于传送基板的多个传送机器人。

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