专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100006225A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100006225A1
公开(公告)日：2010-01-14
申请号：US12230464
申请日：2008-08-29
申请人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
发明人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32651 , H01J37/32935
摘要： To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole 10 is provided in a focus ring 9 in the vicinity of the inner circumferential portion thereof. Current detecting means 11 is arranged in the bottom portion of the minute hole 10. A high-frequency power is supplied to the focus ring 9 via high-frequency power distributing means 16. A state of distortion of an ion sheath 18 is detected from an amount of current which is changed according to the amount of the high-frequency power supplied to the focus ring 9 and which is detected by current detecting means 11. Further, the amount of high-frequency power supplied to the focus ring 9 is controlled by a control section 21 so as to correct the detected distortion state.
摘要翻译：为了能够抑制由于待处理样品的端部处的离子鞘的变形而导致的待处理样品的加工性能的劣化，或者可以维持抑制劣化的条件，从而使得可以提高可接受的产品，从而提高产量。在等离子体处理装置中，微孔10设置在聚焦环9的内周部附近。电流检测装置11布置在微孔10的底部。高频功率通过高频功率分配装置16提供给聚焦环9.离子鞘18的变形状态从根据提供给对焦环9的高频功率的量而改变并由电流检测装置11检测的电流量。此外，提供给聚焦环9的高频功率的量由控制部分21，以校正检测到的失真状态。

IPRDB

热门服务

关于我们

友情链接

联系方式