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1. 发明授权

US5939360A Compound and herbicidal composition for weed control 失效
标题翻译：用于杂草控制的复合和除草组合物
公开(公告)号：US5939360A
公开(公告)日：1999-08-17
申请号：US212794
申请日：1998-12-15
申请人： Hiroyuki Adachi , Masao Yamaguchi , Masami Koguchi , Akihiro Takahashi , Takashi Kawana , Katsunori Tanaka , Osamu Miyahara
发明人： Hiroyuki Adachi , Masao Yamaguchi , Masami Koguchi , Akihiro Takahashi , Takashi Kawana , Katsunori Tanaka , Osamu Miyahara
IPC分类号： A01N43/80 , C07D413/10
CPC分类号： C07D413/10 , A01N43/80
摘要： The present invention is directed to a compound of formula �I!: ##STR1## or a salt thereof in which R.sub.1 is a a C.sub.1-6 alkyl group, R.sup.2 is a halogen atom, a C.sub.1-6 alkylthio group, a C.sub.1-6 alkylsulfinyl group or a C.sub.1-6 alkylsulfonyl group, R.sup.3 and R.sup.4 are each independently hydrogen, a C.sub.1-6 alkyl group or a C.sub.1-6 haloalkyl group, and R is hydrogen or a C.sub.1-6 alkyl group. The present invention is further directed to a compound of formula �1! or a salt thereof, as described above and in which R.sup.1 and R.sup.3 are methyl, R.sup.2 is chlorine or methylsulfonyl, R.sup.4 is hydrogen, and R is methyl or ethyl. In addition, the present invention is directed to a herbicidal composition, characterized in that it contains as active agent one or more compounds of formula �I! or salt thereof in which R.sup.1, R.sup.2, R.sup.3, R.sup.4 are as described above.
摘要翻译：本发明涉及式[I]化合物或其盐，其中R 1为C 1-6烷基，R 2为卤素原子，C 1-6烷硫基，C 1-6烷基亚磺酰基或 C 1-6烷基磺酰基，R 3和R 4各自独立地为氢，C 1-6烷基或C 1-6卤代烷基，R为氢或C 1-6烷基。本发明还涉及如上所述的式[1]化合物或其盐，其中R 1和R 3是甲基，R 2是氯或甲磺酰基，R 4是氢，R是甲基或乙基。此外，本发明涉及一种除草组合物，其特征在于其含有一种或多种式[I]化合物或其盐，其中R 1，R 2，R 3，R 4如上所述。

2. 发明授权

US5948917A 3-(isoxazol-5-yl)-substituted benzoic acid derivative and method for production thereof 失效
标题翻译： 3-（异恶唑-5-基） - 取代苯甲酸衍生物及其制备方法
公开(公告)号：US5948917A
公开(公告)日：1999-09-07
申请号：US875548
申请日：1997-09-24
申请人： Hiroyuki Adachi , Masao Yamaguchi , Osamu Miyahara , Takahiro Sagae
发明人： Hiroyuki Adachi , Masao Yamaguchi , Osamu Miyahara , Takahiro Sagae
IPC分类号： A01N43/56 , A01N43/653 , A01N43/713 , A01N43/74 , A01N43/80 , A01N43/82 , C07D261/08 , C07D401/10 , C07D413/10
CPC分类号： C07D401/10 , A01N43/56 , A01N43/653 , A01N43/713 , A01N43/74 , A01N43/80 , A01N43/82 , C07D261/08 , C07D413/10
摘要： This invention concerns a benzoic acid represented by the formula �I! ##STR1## or a benzoic acid derivative and a method for the production of a compound represented by the formula �I!. The compound represented by the formula �I! is an intermediate for the production of a herbicidally active pyrazole compound represented by the formula �B! ##STR2##
摘要翻译： PCT No.PCT / JP97 / 00341 Sec。 371 1997年10月2日第 102（e）日期1997年10月2日PCT 1997年2月10日提交PCT公布。出版物WO97 / 35850 日期1997年10月2日本发明涉及由式[I]表示的苯甲酸或苯甲酸衍生物及其制备式[I]表示的化合物的方法。由式[I]表示的化合物是用于制备由式[B]表示的除草活性吡唑化合物的中间体，

3. 发明授权

US08313591B2 Austenitic heat resistant alloy 有权
标题翻译：奥氏体耐热合金
公开(公告)号：US08313591B2
公开(公告)日：2012-11-20
申请号：US12647028
申请日：2009-12-24
申请人： Hiroyuki Hirata , Atsuro Iseda , Hirokazu Okada , Hiroyuki Semba , Kaori Kawano , Osamu Miyahara
发明人： Hiroyuki Hirata , Atsuro Iseda , Hirokazu Okada , Hiroyuki Semba , Kaori Kawano , Osamu Miyahara
IPC分类号： C22C30/00 , C22C19/05
CPC分类号： C22C38/44 , C21D6/001 , C21D6/002 , C21D6/004 , C22C38/001 , C22C38/002 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/50 , C22C38/52 , C22C38/54 , F22B37/04
摘要： An austenitic heat resistant alloy, which contains, by mass percent, C≦0.15%, Si≦2%, Mn≦3%, Ni: 40 to 80%, Cr: 15 to 40%, W and Mo: 1 to 15% in total content, Ti≦3%, Al≦3%, N≦0.03%, O≦0.03%, with the balance being Fe and impurities, and among the impurities P≦0.04%, S≦0.03%, Sn≦0.1%, As≦0.01%, Zn≦0.01%, Pb≦0.01% and Sb≦0.01%, and satisfies the conditions [P1=S+{(P+Sn)/2}+{(As+Zn+Pb+Sb)/5}≦0.050], [0.2≦P2=Ti+2Al≦7.5−10×P1], [P2≦9.0−100×O] and [N≦0.002×P2+0.019] can prevent both the liquation crack in the HAZ and the brittle crack in the HAZ and also can prevent defects due to welding fabricability, which occur during welding fabrication, and moreover has excellent creep strength at high temperatures. Therefore, the alloy can be used suitably as a material for constructing high temperature machines and equipment, such as power generating boilers, plants for the chemical industry and so on. The ally may contain a specific amount or amounts of one or more elements selected from Co, B, Ta, Hf, Nb, Zr, Ca, Mg, Y, La, Ce and Nd.
摘要翻译：一种奥氏体耐热合金，以质量％计含有0.15％，Si＆NlE; 2％，Mn＆NlE; 3％，Ni：40〜80％，Cr：15〜40％，W和Mo：1〜15％在总含量中，Ti＆NlE; 3％，Al＆NlE; 3％，N＆amp; NlE; 0.03％，O＆NlE; 0.03％，余量为Fe和杂质，杂质P＆lt; L; 0.04％，S＆NlE; 0.03％，Sn＆，As / nlE; 0.01％，Zn和nlE; 0.01％，Pb和nlE; 0.01％和Sb＆nlE; 0.01％，满足条件[P1 = S + {（P + Sn）/ 2} + {（As + Zn + Pb + Sb）/ 5}＆nlE; 0.050]，[0.2＆nlE; P2 = Ti + 2Al＆nlE; 7.5-10×P1]，[P2＆nlE; 9.0-100×O]和[N＆lt; lE; 0.002×P2 + 0.019]可以防止液化裂纹 HAZ和HAZ中的脆性裂纹，并且还可以防止在焊接制造期间发生的焊接可制造性的缺陷，并且还在高温下具有优异的蠕变强度。因此，该合金可以适当地用作构成发电锅炉，化工工业用等的高温机器和设备的材料。盟友可以含有一定量或数量的选自Co，B，Ta，Hf，Nb，Zr，Ca，Mg，Y，La，Ce和Nd中的一种或多种元素。

4. 发明申请

US20110229120A1 RINSING METHOD AND DEVELOPING METHOD 有权
标题翻译：冲洗方法与开发方法
公开(公告)号：US20110229120A1
公开(公告)日：2011-09-22
申请号：US13117483
申请日：2011-05-27
申请人： Yasuhiro TAKAKI , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
发明人： Yasuhiro TAKAKI , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
IPC分类号： G03D5/00
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
摘要翻译：在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5）向基板供给水性清洗液的工序（工序6）将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的步骤（STEP7）以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。

5. 发明申请

US20090079948A1 DEVELOPING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：发展方法和发展手段
公开(公告)号：US20090079948A1
公开(公告)日：2009-03-26
申请号：US12273165
申请日：2008-11-18
申请人： Junichi KITANO , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi KITANO , Osamu Miyahara , Shinya Wakamizu
IPC分类号： G03B27/52
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译：使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液）保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜并且因此辐射紫外线，以防止图案下降。

6. 发明申请

US20080274433A1 Rinse Treatment Method and Development Process Method 有权
标题翻译：冲洗处理方法和开发过程方法
公开(公告)号：US20080274433A1
公开(公告)日：2008-11-06
申请号：US11578055
申请日：2005-03-02
申请人： Yasuhiro Takaki , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
发明人： Yasuhiro Takaki , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
IPC分类号： G03F7/20 , B08B3/10
CPC分类号： H01L21/67051 , G03F7/3021
摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
摘要翻译：在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5）向基板供给水性清洗液的工序（工序6）将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的工序（STEP7）以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。

7. 发明授权

US4985575A Process for preparing optically active tetrahydro-2-furoic acid 失效
标题翻译：光学活性四氢-2-糠酸的制备方法
公开(公告)号：US4985575A
公开(公告)日：1991-01-15
申请号：US475801
申请日：1990-02-06
申请人： Masaji Ishiguro , Hiromitsu Iwata , Takashi Nakatsuka , Kiyoharu Nakayama , Osamu Miyahara , Kenichi Noguchi
发明人： Masaji Ishiguro , Hiromitsu Iwata , Takashi Nakatsuka , Kiyoharu Nakayama , Osamu Miyahara , Kenichi Noguchi
IPC分类号： C07B57/00 , C07D307/24
CPC分类号： C07D307/24
摘要： A process for preparing an optically active tetrahydro-2-furoic acid is disclosed. The process comprises (i) reacting (.+-.)-tetrahydro-2-furoic acid with an optically active amine resolver of the following formula (I): ##STR1## wherein R.sub.1 is a lower alkyl group and R.sub.2 represents an alkyl group or ar aryl group, provided that R.sub.1 and R.sub.2 are different from each other, thus producing an optically active diastereomer salt, and (ii) decomposing the diastereomer salt. According to the process, a high purity, optically active tetrahydro-2-furoic acid can be prepared at a high yield using an amine resolver. The amine resolver can be recovered at a high yield and high purity.

8. 发明授权

US08366872B2 Substrate treatment method, coating film removing apparatus, and substrate treatment system 有权
标题翻译：基板处理方法，涂膜去除装置和基板处理系统
公开(公告)号：US08366872B2
公开(公告)日：2013-02-05
申请号：US13161185
申请日：2011-06-15
申请人： Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
发明人： Kenji Tsutsumi , Junichi Kitano , Osamu Miyahara , Hideharu Kyouda
IPC分类号： C23F1/02
CPC分类号： C23C26/00 , G03F1/80 , G03F7/707 , G03F7/70916 , H01L21/308 , H01L21/6708 , H01L21/6715 , H01L21/67178 , H01L21/67225 , H01L21/67742 , H01L21/67745 , H01L21/68707
摘要： According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.
摘要翻译：根据本发明，在基板的光刻处理中，在除去基板背面的涂膜后立即进行曝光处理，在曝光后立即在基板的背面形成涂膜处理。此后，进行蚀刻处理等，并且进行一系列这些处理和处理步骤预定次数。在蚀刻处理时，已经在基板的背面形成了涂膜，使得即使涂膜受到微小的划痕，基板本身的后表面也被涂膜保护，因此不会被刮伤。此外，由于在曝光处理之前立即除去基板后表面上的涂膜，所以基板的后表面可以是平坦的，用于曝光处理。

9. 发明授权

US08293169B2 Ni-base heat resistant alloy 有权
标题翻译：镍基耐热合金
公开(公告)号：US08293169B2
公开(公告)日：2012-10-23
申请号：US13070689
申请日：2011-03-24
申请人： Hiroyuki Semba , Atsuro Iseda , Hiroyuki Hirata , Kaori Kawano , Masaaki Igarashi , Osamu Miyahara
发明人： Hiroyuki Semba , Atsuro Iseda , Hiroyuki Hirata , Kaori Kawano , Masaaki Igarashi , Osamu Miyahara
IPC分类号： C22C19/05
CPC分类号： C22C19/055 , C22C19/056
摘要： A high strength, ductile, and tough Ni-base heat resistant alloy comprises by mass percent, C: 0.1% or less, Si: 1% or less, Mn: 1% or less, Cr: not less than 15% to less than 28%, Fe: 15% or less, W: more than 5% to not more than 20%, Al: more than 0.5% to not more than 2%, Ti: more than 0.5% to not more than 2%, Nd: 0.001 to 0.1% and B: 0.0005 to 0.01%, with the balance being Ni and impurities. Impurity contents of P, S, Sn, Pb, Sb, Zn and As are P: 0.03% or less, S: 0.01% or less, Sn: 0.020% or less, Pb: 0.010% or less, Sb: 0.005% or less, Zn: 0.005% or less and As: 0.005% or less, and formulas of [0.015≦Nd+13.4×B≦0.13], [Sn+Pb≦0.025] and [Sb+Zn +As≦0.010] are met.
摘要翻译：高强度，延性和韧性的Ni基耐热合金，以质量％计，C：0.1％以下，Si：1％以下，Mn：1％以下，Cr：15％以上，小于 28％，Fe：15％以下，W：5％以上20％以下，Al：0.5％以上2％以下，Ti：0.5％以上且2％以下，Nd ：0.001〜0.1％，B：0.0005〜0.01％，余量为Ni和杂质。 P，S，Sn，Pb，Sb，Zn和As的杂质含量P：0.03％以下，S：0.01％以下，Sn：0.020％以下，Pb：0.010％以下，Sb：0.005％较少，Zn：0.005％以下，As：0.005％以下，[0.015＆nlE; Nd + 13.4×B＆nlE; 0.13]，[Sn + Pb＆nlE; 0.025]和[Sb + Zn + As＆nlE; 0.025] 见面

10. 发明授权

US08054443B2 Developing method and developing apparatus 有权
标题翻译：开发方法和开发设备
公开(公告)号：US08054443B2
公开(公告)日：2011-11-08
申请号：US12273165
申请日：2008-11-18
申请人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
IPC分类号： G03B27/32 , G03B27/54
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译：使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液）保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜并且因此辐射紫外线，以防止图案下降。

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