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1. 发明申请

US20080135779A1 Ion Beam System And Machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20080135779A1
公开(公告)日：2008-06-12
申请号：US12020150
申请日：2008-01-25
申请人： Hiroyasu SHICHI , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu SHICHI , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： G21K5/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.
摘要翻译：离子束系统包括保持样品的样品台，通过离子束照射保持在样品台上的样品的照射光学系统和用于观察被加工的样品的横截面的带电粒子束观察系统通过离子束。带电粒子束观测系统包括其中从离子源提取轴和离子束的结构，并且将照射样品的轴布置成至少彼此横向。

2. 发明授权

US07952083B2 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US07952083B2
公开(公告)日：2011-05-31
申请号：US12020150
申请日：2008-01-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： G21K5/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.
摘要翻译：离子束系统包括保持样品的样品台，产生离子束的离子源，使得离子束沿着提取轴从离子源提取;照射光学系统，具有照射轴，沿着该离子束的离子束照射到保持在样品台上的样品，以及带电粒子束观察系统，用于观察被照射的离子束加工的样品的表面。离子束从离子源提取的提取轴和样品照射的照射轴相对于彼此倾斜。

3. 发明授权

US07326942B2 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US07326942B2
公开(公告)日：2008-02-05
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/30 , H01J37/305 , H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

4. 发明申请

US20060065854A1 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20060065854A1
公开(公告)日：2006-03-30
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

5. 发明申请

US20110204225A1 ION Beam System and Machining Method 审中-公开
标题翻译：离子束系统和加工方法
公开(公告)号：US20110204225A1
公开(公告)日：2011-08-25
申请号：US13099670
申请日：2011-05-03
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J3/14 , H01J37/285 , H01J37/20
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction.
摘要翻译：通过用离子束照射样品来对样品进行预定加工的离子束加工系统包括：束斑成形器，其形成离子束的束斑形状，以相对于垂直方向垂直的平面不对称离子束的照射轴，以及定向在样品上的离子束照射位置上的束斑的一个轴在预定方向上的轴定向器。

6. 发明授权

US08478021B2 Charged beam device 有权
标题翻译：带电梁装置
公开(公告)号：US08478021B2
公开(公告)日：2013-07-02
申请号：US13142316
申请日：2010-01-13
申请人： Kaori Shirahata , Yoshinori Nakayama , Keiichiro Hitomi , Muneyuki Fukuda , Yasunari Sohda
发明人： Kaori Shirahata , Yoshinori Nakayama , Keiichiro Hitomi , Muneyuki Fukuda , Yasunari Sohda
IPC分类号： G06K9/00 , G06K9/40
CPC分类号： G01B15/00 , H01J37/153 , H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/1532 , H01J2237/216 , H01L22/12
摘要： In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.
摘要翻译：为了提供能够获得样品表面图案的精确图像的带电束装置，同时提高自动聚焦/像散校正的精度，提供了一种电子枪（1），偏转控制部分（8），其允许电子束扫描，用于电子束的聚焦控制部分（10）和像散校正部分（3），图像处理部分（11）和切换部分（9），当获得图像信息进行自动聚焦/像散校正时的样品（1001）表面和扫描条件，并且在获得图案信息和执行自动聚焦/散光校正时切换扫描速度和扫描程序。

7. 发明申请

US20110274341A1 CHARGED BEAM DEVICE 有权
标题翻译：充电光束装置
公开(公告)号：US20110274341A1
公开(公告)日：2011-11-10
申请号：US13142316
申请日：2010-01-13
申请人： Kaori Shirahata , Yoshinori Nakayama , Keiichiro Hitomi , Muneyuki Fukuda , Yasunari Sohda
发明人： Kaori Shirahata , Yoshinori Nakayama , Keiichiro Hitomi , Muneyuki Fukuda , Yasunari Sohda
IPC分类号： G06K9/00
CPC分类号： G01B15/00 , H01J37/153 , H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/1532 , H01J2237/216 , H01L22/12
摘要： In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.
摘要翻译：为了提供能够获得样品表面图案的精确图像的带电束装置，同时提高自动聚焦/像散校正的精度，提供了一种电子枪（1），偏转控制部分（8），其允许电子束扫描，用于电子束的聚焦控制部分（10）和像散校正部分（3），图像处理部分（11）和切换部分（9），当获得图像信息进行自动聚焦/像散校正时的样品（1001）表面和扫描条件，并且在获得图案信息和执行自动聚焦/散光校正时切换扫描速度和扫描程序。

8. 发明申请

US20120298865A1 SCANNING ELECTRON MICROSCOPE 有权
标题翻译：扫描电子显微镜
公开(公告)号：US20120298865A1
公开(公告)日：2012-11-29
申请号：US13522984
申请日：2011-01-21
申请人： Seiko Omori , Junichi Tanaka , Yoshinori Nakayama , Keiichiro Hitomi
发明人： Seiko Omori , Junichi Tanaka , Yoshinori Nakayama , Keiichiro Hitomi
IPC分类号： H01J37/26
CPC分类号： G03F7/70625 , H01J37/222 , H01J37/28 , H01J2237/1536 , H01J2237/226 , H01J2237/24571 , H01J2237/2809 , H01J2237/2817
摘要： Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.
摘要翻译：公开了一种具有用于测量样品（413）上的图案的尺寸的计算装置（403）的扫描电子显微镜，其特征在于，计算并存储由电子束照射引起的图案形状的变化量在扫描电子显微镜图像（612; 813; 1510）中从扫描电子显微镜图像（612; 813; 1510）中的图案形状轮廓（613; 814; 1511）恢复在用电子束照射样品之前的图案形状轮廓（614; 815; 1512）使用计算量用电子束照射样品，然后显示图案形状轮廓（614; 815; 1512）。因此，消除了当用电子束照射样品时引起的抗蚀剂收缩和/或静电电荷的影响，从而能够以高的电压恢复照射电子束之前的二维图案的形状轮廓使用恢复的图像，可以高精度地测量图案的精度和尺寸。

9. 发明申请

US20120212602A1 PATTERN DIMENSION MEASUREMENT METHOD AND CHARGED PARTICLE BEAM MICROSCOPE USED IN SAME 有权
标题翻译：图案尺寸测量方法和使用的充电颗粒光束显微镜
公开(公告)号：US20120212602A1
公开(公告)日：2012-08-23
申请号：US13504129
申请日：2010-09-30
申请人： Keiichiro Hitomi , Yoshinori Nakayama , Junichi Tanaka
发明人： Keiichiro Hitomi , Yoshinori Nakayama , Junichi Tanaka
IPC分类号： G06K9/48 , H04N7/18
CPC分类号： G01B15/00 , H01J37/28 , H01J2237/2814 , H01J2237/2817
摘要： In order to provide a pattern dimension measurement method with a small measured error and excellent reproducibility even though defocus occurs and a charged particle beam microscope used in the same, in a method for applying a charged particle beam to a specimen formed with a pattern to measure a pattern dimension from a signal intensity distribution of signal charged particles from the specimen, edge index positions (X1) and (X2) on the right and left of the maximum point of signal intensity corresponding to a pattern edge are calculated by a threshold method, and a pattern edge position (Xe) is found from a mean value between the positions. Thus, it is possible to reduce the influence of defocus on the pattern edge position (Xe).
摘要翻译：为了提供即使发生散焦而具有小的测量误差和优异的再现性的图案尺寸测量方法，并且在其中使用带电粒子束显微镜，在将带电粒子束施加到形成有待测量图案的样本的方法中通过阈值法计算来自样本的信号带电粒子的信号强度分布的图案尺寸，对应于图案边缘的最大信号强度点右侧和左侧的边缘索引位置（X1）和（X2）并且从位置之间的平均值找到图案边缘位置（Xe）。因此，可以减小散焦对图案边缘位置（Xe）的影响。

10. 发明授权

US07595482B2 Standard component for length measurement, method for producing the same, and electron beam metrology system using the same 有权
标题翻译：用于长度测量的标准组件，其制造方法和使用其的电子束测量系统
公开(公告)号：US07595482B2
公开(公告)日：2009-09-29
申请号：US12104507
申请日：2008-04-17
申请人： Yoshinori Nakayama
发明人： Yoshinori Nakayama
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01B15/00 , H01J2237/2816
摘要： A standard component for length measurement includes a first diffraction grating and a second diffraction grating. Each of components of the second diffraction grating is disposed between components of the first diffraction grating.
摘要翻译：用于长度测量的标准组件包括第一衍射光栅和第二衍射光栅。第二衍射光栅的每个部件设置在第一衍射光栅的部件之间。

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