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1. 发明授权

US6031244A Luminescent semiconductor device with antidiffusion layer on active layer surface 失效
标题翻译：在有源层表面具有防扩散层的发光半导体器件
公开(公告)号：US6031244A
公开(公告)日：2000-02-29
申请号：US987105
申请日：1997-12-08
申请人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
发明人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
IPC分类号： H01L33/28 , H01L33/00
CPC分类号： H01L33/28
摘要： A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.
摘要翻译：发光半导体器件包括：由II-VI族半导体器件组成的有源层，其包含选自锌，镁，铍，镉，锰和汞中的至少一种II族元素，以及至少一种VI族元素选自氧，硫，硒和碲。形成所述活性层的II-VI族化合物半导体含有选自镁，铍和镉中的至少一种元素作为第II族元素，碲作为VI族元素。至少一个防扩散层防止这些元件从活性层扩散到活性层的至少一个表面上。

2. 发明授权

US5740193A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5740193A
公开(公告)日：1998-04-14
申请号：US832065
申请日：1997-04-02
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

3. 发明授权

US06177690B1 Semiconductor light emitting device having a p-n or p-i-n junction 有权
标题翻译：具有p-n或p-i-n结的半导体发光器件
公开(公告)号：US06177690B1
公开(公告)日：2001-01-23
申请号：US09190436
申请日：1998-11-13
申请人： Hiroyasu Noguchi , Eisaku Kato , Akira Ishibashi
发明人： Hiroyasu Noguchi , Eisaku Kato , Akira Ishibashi
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , H01L33/0012 , H01S5/305 , H01S5/3086 , H01S5/347
摘要： A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value Pmax is x=0, and the range of x satisfying P(x)>Pmax/e2 is −Ln −Ln is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x
摘要翻译：具有良好特性，高可靠性和长寿命的半导体发光器件包括通过将有源层定位在n型掺杂层或p型掺杂层内的位于与耗尽层之间充分远的位置的pn结或pin结 p型掺杂层和n型掺杂层。当来自有源层垂直于有源层的光的强度分量为P（x）时，其最大值Pmax的x为x = 0，满足P（x）> Pmax / e2的x的范围为-Ln 具有pn结的半导体发光器件中的 nn掺杂的至少一部分的掺杂浓度低于n型掺杂的另一部分的掺杂浓度 p型掺杂层的至少一部分的掺杂浓度，其中x

4. 发明授权

US5657336A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5657336A
公开(公告)日：1997-08-12
申请号：US508966
申请日：1995-07-28
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

5. 发明授权

US6069020A Method of manufacturing semiconductor light-emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6069020A
公开(公告)日：2000-05-30
申请号：US189680
申请日：1998-11-13
申请人： Eisaku Kato , Hiroyasu Noguchi , Masaharu Nagai
发明人： Eisaku Kato , Hiroyasu Noguchi , Masaharu Nagai
IPC分类号： H01L33/06 , H01L33/28 , H01L33/40 , H01S5/00 , H01L21/00
CPC分类号： H01L33/28 , H01L33/0087 , Y10S438/93
摘要： In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.
摘要翻译：在制造由II-VI族化合物半导体构成的半导体发光元件的制造方法中，其中使用至少一种以上Zn，Be，Mg，Cd或Hg的元素作为II族元素，至少使用Se，S，Te中的一种以上的元素作为VI族元素，其包括第一导电型和第二导电型包层和有源层，VI族元素的供给比VI / II比和当活性层被外延沉积时所需的II族元素选择为大于1.1并且有源层外延沉积。因此，可以获得其使用寿命更长的高度可靠的半导体发光器件。

6. 发明授权

US6020601A Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US6020601A
公开(公告)日：2000-02-01
申请号：US189679
申请日：1998-11-13
申请人： Hiroyasu Noguchi , Eisaku Kato , Masaharu Nagai
发明人： Hiroyasu Noguchi , Eisaku Kato , Masaharu Nagai
IPC分类号： H01L33/06 , H01L33/28 , H01S5/00 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06
摘要： A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0
摘要翻译：提供了一种寿命长且可靠性更高的半导体发光器件，其在基板（1），由Zn x Mg y B e 1制成的第一导电型包覆层（3）和第二导电型包覆层（7） -x-ySZSe1-z（0

7. 发明授权

US08136581B2 Heat transport apparatus and heat transport apparatus manufacturing method 失效
标题翻译：热输送装置和热输送装置的制造方法
公开(公告)号：US08136581B2
公开(公告)日：2012-03-20
申请号：US10538296
申请日：2003-12-04
申请人： Minehiro Tonosaki , Eisaku Kato , Masakazu Yajima , Takashi Yajima
发明人： Minehiro Tonosaki , Eisaku Kato , Masakazu Yajima , Takashi Yajima
IPC分类号： F28D15/00 , H05K7/20
CPC分类号： F28D15/0266 , F28D15/043 , Y10T29/49353
摘要： A heat transport device having a composite structure that is readily manufactured and a method for manufacturing such a heat transport device are provided. The heat transport device includes a first base plate having a liquid suction and retention unit for sucking and retaining a liquid-phase working fluid by capillary force; a second base plate having a face provided with a first concavity functioning as a vaporization chamber for vaporizing the working fluid, a second concavity functioning as a liquefaction chamber for liquefying the working fluid, a first ditch for transporting the vaporized working fluid, a second ditch for transporting the liquefied working fluid, the second base plate comprising a material having a thermal conductivity lower than that of silicon; and a thermoplastic or thermosetting resin material for bonding the first and second base plates. The heat transport device can be readily manufactured by heating the first and second base plates sandwiching a thermoplastic or thermosetting resin material therebetween.
摘要翻译：提供了具有容易制造的复合结构的热输送装置及其制造方法。热传输装置包括具有用于通过毛细管力吸附和保持液相工作流体的液体吸入和保持单元的第一基板; 第二基板，其具有设置有用作蒸发工作流体的蒸发室的第一凹部的表面，用作液化工作流体的液化室的第二凹部，用于输送蒸发的工作流体的第一沟槽，第二沟槽用于运输液化的工作流体，第二基板包括热导率低于硅的材料; 以及用于粘合第一和第二基板的热塑性或热固性树脂材料。热传输装置可以容易地通过加热夹在其间的热塑性或热固性树脂材料的第一和第二基板来制造。

8. 发明申请

US20100124044A1 REFLECTOR, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：反射器，显示装置及其制造方法
公开(公告)号：US20100124044A1
公开(公告)日：2010-05-20
申请号：US12621773
申请日：2009-11-19
申请人： Eisaku Kato
发明人： Eisaku Kato
IPC分类号： G02F1/13357 , F21V7/00 , G03F7/20 , B29C35/08
CPC分类号： H01L51/5271 , B82Y10/00 , B82Y40/00 , G02B27/0018 , G03F7/0002 , H01L27/322 , H01L27/3244 , H01L51/5284
摘要： A reflector capable of suppressing contrast reduction caused by retro-reflection of outside light, a display device having the same, and a method of manufacturing the same are provided. The reflector includes: a base having first and second opposed surfaces, the second surface being provided with a reflective element; and a light absorbing film formed in a region other than the reflective element in the second surface.
摘要翻译：提供了能够抑制由外部光的后向反射引起的对比度降低的反射器，具有该反射镜的显示装置及其制造方法。所述反射器包括：具有第一和第二相对表面的基座，所述第二表面设置有反射元件; 以及形成在所述第二表面中的所述反射元件以外的区域中的光吸收膜。

9. 发明申请

US20060065385A1 Heat transport apparatus and heat transport apparatus manufacturing method 失效
标题翻译：热输送装置和热输送装置的制造方法
公开(公告)号：US20060065385A1
公开(公告)日：2006-03-30
申请号：US10538296
申请日：2003-12-04
申请人： Minehiro Tonosaki , Eisaku Kato , Masakazu yajima , Takashi Yajima
发明人： Minehiro Tonosaki , Eisaku Kato , Masakazu yajima , Takashi Yajima
IPC分类号： F28D15/00 , H05K7/20
CPC分类号： F28D15/0266 , F28D15/043 , Y10T29/49353
摘要： A heat transport device having a composite structure that is readily manufactured and a method for manufacturing such a heat transport device are provided. The heat transport device includes a first base plate having a liquid suction and retention unit for sucking and retaining a liquid-phase working fluid by capillary force; a second base plate having a face provided with a first concavity functioning as a vaporization chamber for vaporizing the working fluid, a second concavity functioning as a liquefaction chamber for liquefying the working fluid, a first ditch for transporting the vaporized working fluid, a second ditch for transporting the liquefied working fluid, the second base plate comprising a material having a thermal conductivity lower than that of silicon; and a thermoplastic or thermosetting resin material for bonding the first and second base plates. The heat transport device can be readily manufactured by heating the first and second base plates sandwiching a thermoplastic or thermosetting resin material therebetween.
摘要翻译：提供了具有容易制造的复合结构的热输送装置及其制造方法。热传输装置包括具有用于通过毛细管力吸附和保持液相工作流体的液体吸入和保持单元的第一基板; 第二基板，其具有设置有用作蒸发工作流体的蒸发室的第一凹部的表面，用作液化工作流体的液化室的第二凹部，用于输送蒸发的工作流体的第一沟槽，第二沟槽用于运输液化的工作流体，第二基板包括热导率低于硅的材料; 以及用于粘合第一和第二基板的热塑性或热固性树脂材料。热传输装置可以容易地通过加热夹在其间的热塑性或热固性树脂材料的第一和第二基板来制造。

10. 发明授权

US07002802B2 Cooling device, electronic apparatus, display unit, and method of producing cooling device 失效
标题翻译：冷却装置，电子设备，显示单元以及冷却装置的制造方法
公开(公告)号：US07002802B2
公开(公告)日：2006-02-21
申请号：US11073627
申请日：2005-03-08
申请人： Motosuke Ohmi , Eisaku Kato , Minehiro Tonosaki
发明人： Motosuke Ohmi , Eisaku Kato , Minehiro Tonosaki
IPC分类号： H05K7/20
CPC分类号： H05K7/20336 , F28D15/0233
摘要： A cooling device includes a flow-path substrate, an intermediate substrate, and a lid-substrate each made of a polyimide resin, and a condenser substrate incorporated into holes of the intermediate substrate and an evaporator substrate which are made of a metal having a high thermal conductivity, whereby heat from a heat source can be enclosed into the evaporator substrate and the condenser substrate, so that the quantity of the latent heat can be substantially increased.
摘要翻译：冷却装置包括由聚酰亚胺树脂制成的流路基板，中间基板和盖基板，以及并入由中间基板和蒸发器基板的孔的冷凝器基板，所述中空基板和蒸发器基板由具有高导热性，由此能够将来自热源的热量封入蒸发器基板和冷凝器基板，从而可以显着提高潜热量。

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