专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6069020A Method of manufacturing semiconductor light-emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6069020A
公开(公告)日：2000-05-30
申请号：US189680
申请日：1998-11-13
申请人： Eisaku Kato , Hiroyasu Noguchi , Masaharu Nagai
发明人： Eisaku Kato , Hiroyasu Noguchi , Masaharu Nagai
IPC分类号： H01L33/06 , H01L33/28 , H01L33/40 , H01S5/00 , H01L21/00
CPC分类号： H01L33/28 , H01L33/0087 , Y10S438/93
摘要： In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.
摘要翻译：在制造由II-VI族化合物半导体构成的半导体发光元件的制造方法中，其中使用至少一种以上Zn，Be，Mg，Cd或Hg的元素作为II族元素，至少使用Se，S，Te中的一种以上的元素作为VI族元素，其包括第一导电型和第二导电型包层和有源层，VI族元素的供给比VI / II比和当活性层被外延沉积时所需的II族元素选择为大于1.1并且有源层外延沉积。因此，可以获得其使用寿命更长的高度可靠的半导体发光器件。

2. 发明授权

US6020601A Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US6020601A
公开(公告)日：2000-02-01
申请号：US189679
申请日：1998-11-13
申请人： Hiroyasu Noguchi , Eisaku Kato , Masaharu Nagai
发明人： Hiroyasu Noguchi , Eisaku Kato , Masaharu Nagai
IPC分类号： H01L33/06 , H01L33/28 , H01S5/00 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06
摘要： A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0
摘要翻译：提供了一种寿命长且可靠性更高的半导体发光器件，其在基板（1），由Zn x Mg y B e 1制成的第一导电型包覆层（3）和第二导电型包覆层（7） -x-ySZSe1-z（0

3. 发明授权

US08044574B2 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US08044574B2
公开(公告)日：2011-10-25
申请号：US12406223
申请日：2009-03-18
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
IPC分类号： H01L51/10
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

4. 发明申请

US20110170084A1 LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：光曝光掩模及使用其制造半导体器件的方法
公开(公告)号：US20110170084A1
公开(公告)日：2011-07-14
申请号：US13069491
申请日：2011-03-23
申请人： Hideto Ohnuma , Masaharu Nagai
发明人： Hideto Ohnuma , Masaharu Nagai
IPC分类号： G03B27/72
CPC分类号： H01L27/1288 , G03F1/50 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621
摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).
摘要翻译：本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数）通过使用曝光掩模来减少衬底。使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

5. 发明授权

US07829432B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07829432B2
公开(公告)日：2010-11-09
申请号：US12489594
申请日：2009-06-23
申请人： Hideto Ohnuma , Kenichiro Makino , Yoichi Iikubo , Masaharu Nagai , Aiko Shiga
发明人： Hideto Ohnuma , Kenichiro Makino , Yoichi Iikubo , Masaharu Nagai , Aiko Shiga
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

6. 发明授权

US07816863B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07816863B2
公开(公告)日：2010-10-19
申请号：US10933507
申请日：2004-09-03
申请人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
发明人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
IPC分类号： H05B33/22
CPC分类号： H01L27/3258 , H01L21/31608 , H01L27/3246 , H01L27/3276 , H01L51/5206 , H01L51/5218 , H01L51/5246 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323
摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
摘要翻译：本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成以实现具有高稳定性的发光器件。除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。因此，获得了对发光器件的可靠性的协同效应。

7. 发明授权

US07465593B2 Electronics device, semiconductor device, and method for manufacturing the same 有权
标题翻译：电子器件，半导体器件及其制造方法
公开(公告)号：US07465593B2
公开(公告)日：2008-12-16
申请号：US12007293
申请日：2008-01-09
申请人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
发明人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜）由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

8. 发明申请

US20050062409A1 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US20050062409A1
公开(公告)日：2005-03-24
申请号：US10939959
申请日：2004-09-14
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
IPC分类号： H01J1/62 , H01L21/336 , H01L21/77 , H01L27/12 , H01L27/32 , H01L51/52 , H05B33/02 , H05B33/08 , H05B33/10 , H05B33/12 , H05B33/22
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

9. 发明授权

US08723417B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08723417B2
公开(公告)日：2014-05-13
申请号：US13088578
申请日：2011-04-18
申请人： Kaoru Tsuchiya , Aya Anzai , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda
发明人： Kaoru Tsuchiya , Aya Anzai , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L33/52 , H01L27/3244 , H01L27/3276 , H01L51/5246 , H01L2251/5323 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.
摘要翻译：本发明的目的是提供一种这样的密封结构，即，在使用有机或无机电致发光元件的显示器中，可以获得防止外部和水中的劣化因素等水分或氧气劣化的材料的密封结构。鉴于上述目的，着眼于层间绝缘膜的磁导率，抑制了电致发光元件的劣化，并且通过防止水从本发明的层间绝缘膜进入而获得足够的可靠性。

10. 发明授权

US08426945B2 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance 有权
标题翻译：半导体装置，半导体装置的制造方法以及电子设备
公开(公告)号：US08426945B2
公开(公告)日：2013-04-23
申请号：US13225752
申请日：2011-09-06
申请人： Masaharu Nagai , Takafumi Mizoguchi
发明人： Masaharu Nagai , Takafumi Mizoguchi
IPC分类号： H01L29/06
CPC分类号： H01L29/78648 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621
摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.
摘要翻译：为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜，蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式