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    • 1. 发明申请
    • Laser beam inspection equipment
    • 激光束检测设备
    • US20060164109A1
    • 2006-07-27
    • US10542650
    • 2004-01-16
    • Hirotoshi TeradaHiroyoshi SuzukiToshimichi Ishizuka
    • Hirotoshi TeradaHiroyoshi SuzukiToshimichi Ishizuka
    • G01R31/265G01R33/12
    • G01R31/311
    • The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.
    • 本发明涉及一种用于通过使用激光束检查诸如半导体集成电路的样本上的缺陷的激光束检查装置。 激光束检查装置将激光束照射到供给恒定电流的样品或通过恒定电压施加,然后间接检测电流的变化或电场的变化,与扫描所产生的电阻值的变化相对应 沿着样品表面的激光束。 例如,电流的变化是以磁场检测装置检测由流过设置在恒定电压源和试样之间的电源线的电流引起的磁场变化的方式间接进行的,从而成为 可以基于磁场变化的检测来指定样本的缺陷区域。
    • 2. 发明授权
    • Laser beam inspection equipment
    • 激光束检测设备
    • US07230436B2
    • 2007-06-12
    • US10542650
    • 2004-01-16
    • Hirotoshi TeradaHiroyoshi SuzukiToshimichi Ishizuka
    • Hirotoshi TeradaHiroyoshi SuzukiToshimichi Ishizuka
    • G01R31/302
    • G01R31/311
    • The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.
    • 本发明涉及一种用于通过使用激光束检查诸如半导体集成电路的样本上的缺陷的激光束检查装置。 激光束检查装置将激光束照射到供给恒定电流的样品或通过恒定电压施加,然后间接检测电流的变化或电场的变化,与扫描所产生的电阻值的变化相对应 沿着样品表面的激光束。 例如,电流的变化是以磁场检测装置检测由流过设置在恒定电压源和试样之间的电源线的电流引起的磁场变化的方式间接进行的,从而成为 可以基于磁场变化的检测来指定样本的缺陷区域。
    • 3. 发明申请
    • IMMERSION LENS HOLDING DEVICE
    • 倾斜镜头保持装置
    • US20120113534A1
    • 2012-05-10
    • US13375496
    • 2010-05-28
    • Ikuo ArataHirotoshi TeradaToshimichi Ishizuka
    • Ikuo ArataHirotoshi TeradaToshimichi Ishizuka
    • G02B7/02G02B7/04
    • G02B21/33G02B7/16G02B21/248G02B27/32
    • A solid immersion lens supporting device includes a lens holder 30 that holds a solid immersion lens 20 in a free state in which a lens bottom surface 22 protrudes downward through a lower opening 32 so as not to fix the solid immersion lens, and a lens cover 40 which is provided to an upper opening 31 of the lens holder 30, and in which a cover bottom surface 42 on the solid immersion lens 20 side is on a plane perpendicular to an optical axis, the lens cover coming into one-point contact with a spherical lens top surface 21 of the solid immersion lens 20. Further, the lens cover 40 is provided with a positioning portion which is capable of carrying out positioning of the solid immersion lens 20 with respect to the objective lens with reference to an image of the lens cover 40 observed via the objective lens. Thereby, the immersion lens supporting device which is capable of efficiently carrying out movement, installation, and positioning of the immersion lens onto a sample is realized.
    • 固体浸没透镜支撑装置包括:透镜保持器30,其保持固体浸没透镜20处于自由状态,透镜底面22通过下开口32向下突出,以便不固定固体浸没透镜;以及透镜盖 40,其被提供到透镜保持器30的上开口31,并且固体浸没透镜20侧的盖底面42位于与光轴垂直的平面上,透镜盖与 固体浸没透镜20的球面透镜顶表面21.此外,透镜盖40设置有能够相对于物镜执行固体浸没透镜20相对于物镜的定位的定位部分 通过物镜观察透镜盖40。 由此,可以实现能够有效地进行浸渍透镜的移动,安装和定位的浸没透镜支撑装置。
    • 4. 发明授权
    • Immersion lens holding device
    • 浸透镜保持装置
    • US08619377B2
    • 2013-12-31
    • US13375496
    • 2010-05-28
    • Ikuo ArataHirotoshi TeradaToshimichi Ishizuka
    • Ikuo ArataHirotoshi TeradaToshimichi Ishizuka
    • G02B7/02
    • G02B21/33G02B7/16G02B21/248G02B27/32
    • A solid immersion lens supporting device includes a lens holder 30 that holds a solid immersion lens 20 in a free state in which a lens bottom surface 22 protrudes downward through a lower opening 32 so as not to fix the solid immersion lens, and a lens cover 40 which is provided to an upper opening 31 of the lens holder 30, and in which a cover bottom surface 42 on the solid immersion lens 20 side is on a plane perpendicular to an optical axis, the lens cover coming into one-point contact with a spherical lens top surface 21 of the solid immersion lens 20. Further, the lens cover 40 is provided with a positioning portion which is capable of carrying out positioning of the solid immersion lens 20 with respect to the objective lens with reference to an image of the lens cover 40 observed via the objective lens. Thereby, the immersion lens supporting device which is capable of efficiently carrying out movement, installation, and positioning of the immersion lens onto a sample is realized.
    • 固体浸没透镜支撑装置包括:透镜保持器30,其保持固体浸没透镜20处于自由状态,透镜底面22通过下开口32向下突出,以便不固定固体浸没透镜;以及透镜盖 40,其被提供到透镜保持器30的上开口31,并且固体浸没透镜20侧的盖底面42位于与光轴垂直的平面上,透镜盖与 固体浸没透镜20的球面透镜顶表面21.此外,透镜盖40设置有能够相对于物镜执行固体浸没透镜20相对于物镜的定位的定位部分 通过物镜观察透镜盖40。 由此,可以实现能够有效地进行浸渍透镜的移动,安装和定位的浸没透镜支撑装置。
    • 5. 发明授权
    • Observing device and method
    • 观察装置和方法
    • US08582202B2
    • 2013-11-12
    • US12665588
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B21/00
    • G02B21/0016G01N21/9501G02B7/022G02B21/248G02B21/33
    • When it is detected that a solid immersion lens comes into contact with the semiconductor device, the lens is caused to vibrate by a vibration generator unit. Next, a reflected light image from the lens is input to calculate a reflected light quantity of the reflected light image, and it is judged whether a ratio of the reflected light quantity to an incident light quantity is not greater than a threshold value. When the ratio is greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is not achieved, and the lens is again caused to vibrate. When the ratio is not greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is achieved, and an observed image of the semiconductor device is acquired.
    • 当检测到固体浸没透镜与半导体器件接触时,透镜被振动发生器单元振动。 接下来,输入来自透镜的反射光图像以计算反射光图像的反射光量,并且判断反射光量与入射光量的比率是否不大于阈值。 当比率大于阈值时,判断透镜和半导体器件之间的光学紧密接触没有实现,并且再次使透镜振动。 当比率不大于阈值时,判断透镜和半导体器件之间的光学紧密接触是实现的,并且获得了半导体器件的观察图像。
    • 7. 发明申请
    • OBSERVING DEVICE AND METHOD
    • 观察装置和方法
    • US20100202041A1
    • 2010-08-12
    • US12665588
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B21/02
    • G02B21/0016G01N21/9501G02B7/022G02B21/248G02B21/33
    • When a semiconductor device 11 is observed, first, when it is detected that a solid immersion lens 6 comes into contact with the semiconductor device 11, the solid immersion lens 6 is caused to vibrate by a vibration generator unit. Next, a reflected light image from the solid immersion lens 6 is input to calculate a reflected light quantity m of the reflected light image, and it is judged whether a ratio (m/n) of the reflected light quantity m to an incident light quantity n is not greater than a threshold value A. When the ratio (m/n) is greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is not achieved, and the solid immersion lens 6 is again caused to vibrate. When the ratio (m/n) is not greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is achieved, and an observed image of the semiconductor device 11 is acquired. Thereby, achieving an observation apparatus and method capable of improving the close contact between the solid immersion lens and an observation object.
    • 当观察到半导体器件11时,首先,当检测到固体浸没透镜6与半导体器件11接触时,使固体浸没透镜6由振动发生器单元振动。 接下来,输入来自固体浸没透镜6的反射光图像以计算反射光图像的反射光量m,并且判断反射光量m与入射光量的比(m / n) n不大于阈值A.当比率(m / n)大于阈值A时,判断为没有实现固体浸没透镜6与半导体器件11之间的光学紧密接触,并且 再次使固体浸没透镜6振动。 当比率(m / n)不大于阈值A时,判断固体浸没透镜6与半导体器件11之间的光学紧密接触,并且获得半导体器件11的观察图像。 由此,能够实现能够改善固体浸没透镜与观察对象物之间的紧密接触的观察装置和方法。
    • 8. 发明申请
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US20070146871A1
    • 2007-06-28
    • US11711638
    • 2007-02-28
    • Hirotoshi TeradaIkuo Arata
    • Hirotoshi TeradaIkuo Arata
    • G02B21/00
    • G01N21/1717G01N21/8806G01N21/9501G01N2021/0342G02B21/02G02B21/365
    • For a semiconductor device S as a sample of an observed object, there are provided an image acquisition part 1 for carrying out observation of the semiconductor device S, and an optical system 2 comprising an objective lens 20. A solid immersion lens (SIL) 3 for magnifying an image of the semiconductor device S is arranged movable between an insertion position where the solid immersion lens includes an optical axis from the semiconductor device S to the objective lens 20 and is in close contact with a surface of the semiconductor device S, and a standby position off the optical axis. Then an image containing reflected light from SIL 3 is acquired with the SIL 3 at the insertion position, and the insertion position of SIL 3 is adjusted by SIL driver 30, with reference to the image. This realizes a semiconductor inspection apparatus (microscope) capable of readily performing observation of the sample necessary for an analysis of microstructure of a semiconductor device or the like, and a semiconductor inspection method (sample observation method) therewith.
    • 对于作为观察对象的样本的半导体器件S,设置有用于执行半导体器件S的观察的图像获取部分1和包括物镜20的光学系统2.固体浸没透镜(SIL)3 用于放大半导体器件S的图像的布置可以在固体浸没透镜包括从半导体器件S到物镜20的光轴并且与半导体器件S的表面紧密接触的插入位置之间移动,以及 离开光轴的待机位置。 然后,通过SIL 3在插入位置获取包含来自SIL 3的反射光的图像,并且参考图像,通过SIL驱动器30调整SIL 3的插入位置。 这实现了能够容易地观察对半导体装置等的微结构进行分析所需的样品的半导体检查装置(显微镜)以及半导体检查方法(样本观察方法)。
    • 9. 发明申请
    • Fluorescence lifetime distribution image measuring system and its measuring method
    • 荧光寿命分布图像测量系统及其测量方法
    • US20050157292A1
    • 2005-07-21
    • US10516076
    • 2003-05-28
    • Haruhisa SaitohHirotoshi Terada
    • Haruhisa SaitohHirotoshi Terada
    • G01N21/64
    • G01N21/6408
    • Pulse excitation light, emitted from a laser light source 10, is scanned in a first direction by a first scanning means 100, scanned in a second direction, perpendicular to the first direction, by a second scanning means 120, converged by an objective optical system 140, and illuminated onto sample 50. Fluorescences, emitted from sample 50, are output from objective optical system 140 to second scanning means 120, scanned in the second direction, perpendicular to the first direction, and output to a light separation means 110 by second scanning means 120, output from light separation means 110 to a streak camera, and recorded as variations of time of the fluorescence intensities by streak camera 30. Fluorescence lifetimes are calculated based on these variations with time of the fluorescence intensities and a fluorescence lifetime distribution image is prepared.
    • 由激光光源10发射的脉冲激发光由第一扫描装置100沿第一方向扫描,第一扫描装置100通过第二扫描装置120沿第二方向垂直于第一方向扫描,由物镜光学系统 140,并照射到样品50上。 从样品50发射的荧光从物镜光学系统140输出到与第一方向垂直扫描的第二扫描装置120,并通过第二扫描装置120输出到光分离装置110,从光分离 意味着110到条纹相机,并且被条纹相机30的荧光强度的时间变化记录下来。 基于荧光强度随时间的变化计算荧光寿命并制备荧光寿命分布图像。