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    • 1. 发明授权
    • Observing device and method
    • 观察装置和方法
    • US08582202B2
    • 2013-11-12
    • US12665588
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B21/00
    • G02B21/0016G01N21/9501G02B7/022G02B21/248G02B21/33
    • When it is detected that a solid immersion lens comes into contact with the semiconductor device, the lens is caused to vibrate by a vibration generator unit. Next, a reflected light image from the lens is input to calculate a reflected light quantity of the reflected light image, and it is judged whether a ratio of the reflected light quantity to an incident light quantity is not greater than a threshold value. When the ratio is greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is not achieved, and the lens is again caused to vibrate. When the ratio is not greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is achieved, and an observed image of the semiconductor device is acquired.
    • 当检测到固体浸没透镜与半导体器件接触时,透镜被振动发生器单元振动。 接下来,输入来自透镜的反射光图像以计算反射光图像的反射光量,并且判断反射光量与入射光量的比率是否不大于阈值。 当比率大于阈值时,判断透镜和半导体器件之间的光学紧密接触没有实现,并且再次使透镜振动。 当比率不大于阈值时,判断透镜和半导体器件之间的光学紧密接触是实现的,并且获得了半导体器件的观察图像。
    • 2. 发明申请
    • OBSERVING DEVICE AND METHOD
    • 观察装置和方法
    • US20100202041A1
    • 2010-08-12
    • US12665588
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B21/02
    • G02B21/0016G01N21/9501G02B7/022G02B21/248G02B21/33
    • When a semiconductor device 11 is observed, first, when it is detected that a solid immersion lens 6 comes into contact with the semiconductor device 11, the solid immersion lens 6 is caused to vibrate by a vibration generator unit. Next, a reflected light image from the solid immersion lens 6 is input to calculate a reflected light quantity m of the reflected light image, and it is judged whether a ratio (m/n) of the reflected light quantity m to an incident light quantity n is not greater than a threshold value A. When the ratio (m/n) is greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is not achieved, and the solid immersion lens 6 is again caused to vibrate. When the ratio (m/n) is not greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is achieved, and an observed image of the semiconductor device 11 is acquired. Thereby, achieving an observation apparatus and method capable of improving the close contact between the solid immersion lens and an observation object.
    • 当观察到半导体器件11时,首先,当检测到固体浸没透镜6与半导体器件11接触时,使固体浸没透镜6由振动发生器单元振动。 接下来,输入来自固体浸没透镜6的反射光图像以计算反射光图像的反射光量m,并且判断反射光量m与入射光量的比(m / n) n不大于阈值A.当比率(m / n)大于阈值A时,判断为没有实现固体浸没透镜6与半导体器件11之间的光学紧密接触,并且 再次使固体浸没透镜6振动。 当比率(m / n)不大于阈值A时,判断固体浸没透镜6与半导体器件11之间的光学紧密接触,并且获得半导体器件11的观察图像。 由此,能够实现能够改善固体浸没透镜与观察对象物之间的紧密接触的观察装置和方法。
    • 3. 发明授权
    • Solid immersion lens holder
    • 固体浸没镜头支架
    • US07576928B2
    • 2009-08-18
    • US10878527
    • 2004-06-29
    • Hiroshi TanabeIkuo ArataHirotoshi Terada
    • Hiroshi TanabeIkuo ArataHirotoshi Terada
    • G02B7/02
    • G02B7/14G02B21/33
    • An arrangement, equipped with a holder 9, which supports a solid immersion lens 3 in the gravity direction with the bottom surface of solid immersion lens 3 being protruded downward through an opening 9b, is provided. With this arrangement, when solid immersion lens 3 is set on an observed object, solid immersion lens 3 is put in a state in which it is raised by the observed object and is made free with respect to holder 9. Also in this state, an excessive pressure will not be applied to the observed object and yet solid immersion lens 3 is put in close contact in conformance with the observed object and temperature drifts at the holder 9 side or the observed object side are cut off from the counterpart side and thus the influences of such temperature drifts are eliminated. A solid immersion lens holder, with which the damaging of the observed object can be eliminated and which enables high-precision observation, is thus provided.
    • 提供了一种装置,其具有保持器9,其在重力方向上支撑固体浸没透镜3,固体浸没透镜3的底面通过开口9b向下突出。 通过这种布置,当固体浸没透镜3设置在被观察物体上时,固体浸没透镜3被置于被观察物体升高的状态,并相对于保持器9而自由。同样在这种状态下 不会对观察到的物体施加过大的压力,并且固体浸没透镜3与观察到的物体保持紧密接触,并且在保持器9侧的温度漂移或观察到的物体侧从对方侧切断,因此 消除了这种温度漂移的影响。 因此提供了可以消除观察对象的损坏并且能够进行高精度观察的固体浸没透镜保持器。
    • 4. 发明授权
    • Solid immersion lens holder
    • 固体浸没镜头支架
    • US08094389B2
    • 2012-01-10
    • US12664105
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B7/02
    • G02B21/33G01N21/9501G02B7/022G02B21/0016G02B21/02G02B21/248
    • A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.
    • 固体浸没透镜保持器200包括具有保持固体浸没透镜6的透镜保持单元60的保持器主体8和用于将保持器主体8附接到物镜21的前端的物镜插座9。 固体浸没透镜6被保持为相对于透镜保持单元60不固定的状态。使保持器主体8振动的振动发生器单元120附接到物镜插座9.振动发生器 单元120具有由电动机保持构件130保持的振动电动机140,并且被构造为重量偏心的重物142附接到振动电动机140的输出轴141.在振动发生器单元120中产生的振动被传递到 固体浸没透镜6经由物镜插座9和保持器本体8.由此,实现能够改善固体浸没透镜和观察对象之间的紧密接触的固体浸没透镜保持器。
    • 5. 发明授权
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US07576910B2
    • 2009-08-18
    • US11979592
    • 2007-11-06
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • G02B21/00
    • G02B21/33G01N21/9501G01N21/956G01N21/95684G02B21/0016G02B21/362
    • For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
    • 对于作为检查对象的半导体装置S,提供了图像获取部分1,包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜(SIL)3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察,该两种控制模式由SIL 3位于待机位置的第一模式进行,并且基于第一模式的基板的折射率n0和厚度t0进行聚焦和像差校正 半导体器件S和第二模式,其中SIL 3位于插入位置,并且基于衬底的折射率n0和厚度t0执行聚焦和像差校正,并且折射率n1,厚度 d1和SIL3的曲率半径R1。这提供了能够容易地观察对半导体器件的微结构等的分析所需的样品的显微镜和样品观察方法。
    • 6. 发明申请
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US20080074739A1
    • 2008-03-27
    • US11979592
    • 2007-11-06
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • G02B21/00
    • G02B21/33G01N21/9501G01N21/956G01N21/95684G02B21/0016G02B21/362
    • For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
    • 对于作为检查对象的半导体装置S,提供了图像获取部分1,包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜(SIL)3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察,该两种控制模式由SIL 3位于待机位置的第一模式组成,并且基于折射率n <0>进行聚焦和像差校正, 半导体器件S的衬底的厚度t 0 <0 和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0,折射率n <1,厚度d 1, 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。
    • 7. 发明授权
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US07312921B2
    • 2007-12-25
    • US11333550
    • 2006-01-18
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • G02B21/00
    • G02B21/33G01N21/9501G01N21/956G01N21/95684G02B21/0016G02B21/362
    • For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
    • 对于作为检查对象的半导体装置S,提供了图像获取部分1,包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜(SIL)3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察,该两种控制模式由SIL 3位于待机位置的第一模式组成,并且基于折射率n <0>进行聚焦和像差校正, 半导体器件S的衬底的厚度t 0 <0 和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0,折射率n <1,厚度d 1, 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。
    • 8. 发明申请
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US20060176548A1
    • 2006-08-10
    • US11333550
    • 2006-01-18
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru SakamotoYoshio Isobe
    • G02B21/00
    • G02B21/33G01N21/9501G01N21/956G01N21/95684G02B21/0016G02B21/362
    • For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
    • 对于作为检查对象的半导体装置S,提供了图像获取部分1,包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜(SIL)3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察,该两种控制模式由SIL 3位于待机位置的第一模式组成,并且基于折射率n <0>进行聚焦和像差校正, 半导体器件S的衬底的厚度t 0 <0 和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0,折射率n <1,厚度d 1, 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。
    • 9. 发明申请
    • SOLID IMMERSION LENS HOLDER
    • 固体透镜镜架
    • US20100172035A1
    • 2010-07-08
    • US12664105
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B7/02
    • G02B21/33G01N21/9501G02B7/022G02B21/0016G02B21/02G02B21/248
    • A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.
    • 固体浸没透镜保持器200包括具有保持固体浸没透镜6的透镜保持单元60的保持器主体8和用于将保持器主体8附接到物镜21的前端的物镜插座9。 固体浸没透镜6被保持为相对于透镜保持单元60不固定的状态。使保持器主体8振动的振动发生器单元120附接到物镜插座9.振动发生器 单元120具有由电动机保持构件130保持的振动电动机140,并且被构造为重量偏心的重物142附接到振动电动机140的输出轴141.在振动发生器单元120中产生的振动被传递到 固体浸没透镜6经由物镜插座9和保持器本体8.由此,实现能够改善固体浸没透镜和观察对象之间的紧密接触的固体浸没透镜保持器。
    • 10. 发明申请
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US20050190436A1
    • 2005-09-01
    • US10880100
    • 2004-06-30
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru Sakamoto
    • Hirotoshi TeradaIkuo ArataMasaharu TokiwaHiroshi TanabeShigeru Sakamoto
    • G02B21/00G02B21/33
    • G02B21/0016G02B21/33Y10S359/90
    • For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
    • 对于作为检查对象的半导体装置S,提供了图像获取部分1,包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜(SIL)3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式中进行观察,该两种控制模式包括SIL 3位于待机位置的第一模式,并且基于第一模式的基板的折射率no和厚度对其执行聚焦和像差校正 半导体器件S和第二模式,其中SIL 3位于插入位置,并且基于衬底的折射率no和厚度t 0 0进行聚焦和像差校正, 和折射率n 1 1,厚度d 1,以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。