专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06993854B2 Centrifugal dryer, manufacturing method for semiconductor device and semiconductor manufacturing apparatus 有权
公开(公告)号：US06993854B2
公开(公告)日：2006-02-07
申请号：US10131246
申请日：2002-04-25
申请人： Hirotoshi Ise , Toshiki Oono , Tatsuo Mizuno
发明人： Hirotoshi Ise , Toshiki Oono , Tatsuo Mizuno
IPC分类号： F26B17/24
CPC分类号： H01L21/67253 , H01L21/67034
摘要： A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

2. 发明授权

US06768542B2 Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device 失效
标题翻译：待处理基板缺陷检查装置及制造半导体装置的方法
公开(公告)号：US06768542B2
公开(公告)日：2004-07-27
申请号：US10219292
申请日：2002-08-16
申请人： Hirotoshi Ise , Toshiki Oono , Yasuhiro Kimura , Toshio Komemura , Masato Toyota , Toshihiko Noguchi
发明人： Hirotoshi Ise , Toshiki Oono , Yasuhiro Kimura , Toshio Komemura , Masato Toyota , Toshihiko Noguchi
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/9503
摘要： A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.
摘要翻译：用于晶片的缺陷检查装置内置在用于在半导体制造工艺中定位作为待处理基板的晶片1的定位装置中。在保持在真空保持基座2上的晶片上照射光从晶片定位位置和接收散射光的位置旋转至少一个旋转晶片。操作单元14和控制单元15判断如果散射光的强度超过预定阈值，则在晶片1上检测到缺陷。

3. 发明授权

US5140647A Image joining method and system 失效
标题翻译：图像连接方法和系统
公开(公告)号：US5140647A
公开(公告)日：1992-08-18
申请号：US623503
申请日：1990-12-07
申请人： Hirotoshi Ise , Haruo Takeda
发明人： Hirotoshi Ise , Haruo Takeda
IPC分类号： G06T1/00 , G06T3/00 , H04N1/047 , H04N1/387
CPC分类号： H04N1/047 , H04N1/3876 , H04N2201/0414 , H04N2201/04729 , H04N2201/04789
摘要： An image of a size exceeding a reading surface area of an image input temperature is divided into a plurality of image portions such that the image portions resulting from the division have respective overlap regions. A position detectable mark is attached to each of the overlap regions. The plurality of image portions are joined together into one image by making use of the marks.
摘要翻译：尺寸超过图像输入温度的读取表面积的图像被分成多个图像部分，使得由分割得到的图像部分具有各自的重叠区域。位置可检测标记附着到每个重叠区域。多个图像部分通过使用标记连接在一起成为一个图像。

4. 发明申请

US20120183683A1 GLASS SUBSTRATE-HOLDING TOOL AND METHOD FOR PRODUCING AN EUV MASK BLANK BY EMPLOYING THE SAME 有权
标题翻译：玻璃基板保持工具及通过使用其制造EUV掩蔽层的方法
公开(公告)号：US20120183683A1
公开(公告)日：2012-07-19
申请号：US13347150
申请日：2012-01-10
申请人： Takahiro MITSUMORI , Takeru Kinoshita , Hirotoshi Ise
发明人： Takahiro MITSUMORI , Takeru Kinoshita , Hirotoshi Ise
IPC分类号： C23C16/458 , B05D5/06
CPC分类号： C23C14/50 , G03F1/24 , H01L21/67748 , H01L21/6831 , H01L21/68728 , Y10S269/90 , Y10S269/903
摘要： A glass substrate-holding tool employed during the production of a reflective mask blank for EUV lithography includes an electrostatic chuck and a mechanical chuck. A caught and held portion of a glass substrate caught and held by the electrostatic chuck, and pressed portions of the glass substrate pressed by the mechanical chuck are located outside a quality-guaranteed region on each of a film deposition surface and a rear surface of the glass substrate. The sum of a catching and holding force applied to the glass substrate by the electrostatic chuck and a holding force applied to the glass substrate by the mechanical chuck is at least 200 kgf. A pressing force per unit area applied to the glass substrate by the mechanical chuck is at most 25 kgf/mm2.
摘要翻译：在生产用于EUV光刻的反射掩模板的玻璃基板保持工具中，包括静电卡盘和机械卡盘。由静电卡盘夹住并保持的玻璃基板的被夹持部分和被机械卡盘按压的玻璃基板的按压部分位于膜保护表面和后表面的质量保证区域的外侧玻璃基板。通过静电卡盘施加到玻璃基板的抓持力和通过机械卡盘施加到玻璃基板的保持力的总和为至少200kgf。通过机械卡盘施加到玻璃基板的每单位面积的按压力为25kgf / mm2以下。

5. 发明申请

US20110266140A1 PROCESS FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 审中-公开
标题翻译：用于生成用于EUV光刻的反射掩模空白的方法
公开(公告)号：US20110266140A1
公开(公告)日：2011-11-03
申请号：US13180611
申请日：2011-07-12
申请人： Takeru KINOSHITA , Hirotoshi Ise
发明人： Takeru KINOSHITA , Hirotoshi Ise
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： H01L21/6831 , G03F1/24 , G03F7/70708
摘要： Provision of a process for producing an EUV mask blank wherein formation of scars of a glass substrate surface or a chuck surface due to sandwiching of foreign objects such as particles between an electrostatic chuck and the glass substrate, is suppressed.A process for producing an EUV mask blank wherein an electrostatic chuck for clamping a glass substrate has a main body and a lower dielectric layer made of an organic polymer film, and electrode portion made of an electrically conductive material and an upper dielectric layer made of an organic polymer film provided in this order on the main body, wherein the upper dielectric layer includes an anode and a cathode.
摘要翻译：提供用于制造EUV掩模坯料的方法，其中由于在静电卡盘和玻璃基板之间夹杂异物诸如颗粒而形成玻璃基板表面或卡盘表面的疤痕。一种用于制造EUV掩模坯料的方法，其中用于夹持玻璃基板的静电卡盘具有主体和由有机聚合物膜制成的下介电层，以及由导电材料制成的电极部分和由有机聚合物膜在该主体上依次设置，其中上部电介质层包括阳极和阴极。

6. 发明授权

US06218196B1 Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device 失效
标题翻译：蚀刻装置，蚀刻方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US06218196B1
公开(公告)日：2001-04-17
申请号：US09188117
申请日：1998-11-09
申请人： Hirotoshi Ise , Takayuki Ikushima , Minoru Hanazaki , Nobuhiro Nishizaki
发明人： Hirotoshi Ise , Takayuki Ikushima , Minoru Hanazaki , Nobuhiro Nishizaki
IPC分类号： H01L21461
CPC分类号： C23F4/00 , H01L21/32136
摘要： Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.
摘要翻译：两个电极设置在处理容器中以彼此相对。将Cl2和BCl3的主要蚀刻处理气体引入处理容器中，并且向其中加入由C，H和F中的至少两种构成的沉积型气体，例如CHF 3气体或CF 4气体。通过在保持要蚀刻的样品的两个电极之间施加脉冲调制的高频电压来产生等离子体。通过使用等离子体蚀刻样品。

7. 发明授权

US08967608B2 Glass substrate-holding tool and method for producing an EUV mask blank by employing the same 有权
标题翻译：玻璃基板保持工具及其制造方法
公开(公告)号：US08967608B2
公开(公告)日：2015-03-03
申请号：US13347150
申请日：2012-01-10
申请人： Takahiro Mitsumori , Takeru Kinoshita , Hirotoshi Ise
发明人： Takahiro Mitsumori , Takeru Kinoshita , Hirotoshi Ise
IPC分类号： H01L21/687 , C23C14/50 , G03F1/24 , H01L21/677 , H01L21/683
CPC分类号： C23C14/50 , G03F1/24 , H01L21/67748 , H01L21/6831 , H01L21/68728 , Y10S269/90 , Y10S269/903
摘要： A glass substrate-holding tool employed during the production of a reflective mask blank for EUV lithography includes an electrostatic chuck and a mechanical chuck. A caught and held portion of a glass substrate caught and held by the electrostatic chuck, and pressed portions of the glass substrate pressed by the mechanical chuck are located outside a quality-guaranteed region on each of a film deposition surface and a rear surface of the glass substrate. The sum of a catching and holding force applied to the glass substrate by the electrostatic chuck and a holding force applied to the glass substrate by the mechanical chuck is at least 200 kgf. A pressing force per unit area applied to the glass substrate by the mechanical chuck is at most 25 kgf/mm2.
摘要翻译：在生产用于EUV光刻的反射掩模板的玻璃基板保持工具中，包括静电卡盘和机械卡盘。由静电卡盘夹住并保持的玻璃基板的被夹持部分和被机械卡盘按压的玻璃基板的按压部分位于膜保护表面和后表面的质量保证区域的外侧玻璃基板。通过静电卡盘施加到玻璃基板的抓持力和通过机械卡盘施加到玻璃基板的保持力的总和为至少200kgf。通过机械卡盘施加到玻璃基板的每单位面积的按压力为25kgf / mm2以下。

8. 发明授权

US08837108B2 Glass substrate-holding tool and method for producing an EUV mask blank by employing the same 有权
标题翻译：玻璃基板保持工具及其制造方法
公开(公告)号：US08837108B2
公开(公告)日：2014-09-16
申请号：US13475459
申请日：2012-05-18
申请人： Takahiro Mitsumori , Hirotoshi Ise , Takeru Kinoshita
发明人： Takahiro Mitsumori , Hirotoshi Ise , Takeru Kinoshita
IPC分类号： H01L21/683 , H01T23/00 , G03F1/24
CPC分类号： H01L21/6831 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A glass substrate-holding tool, adapted to be employed during the production of a reflective mask blank for EUV lithography (EUVL), includes an electrostatic chuck and a supporting member. The chuck attracts a rear surface of a glass substrate in a non-contact manner by electrostatic attractive force. The supporting member partly supports the rear surface. An area ratio of a projected area of an active surface of the chuck for providing the electrostatic force to an area of a quality-guaranteed region of the rear surface is from 0.5 to 1.0. The active surface is apart from the rear surface by more than 20 μm. The supporting member is configured to support only a region including at least two of four sides defining an outer portion outside the quality-guaranteed region.
摘要翻译：适用于制造用于EUV光刻（EUVL）的反射掩模板的玻璃基板保持工具包括静电卡盘和支撑部件。卡盘通过静电吸引力以非接触的方式吸引玻璃基板的后表面。支撑构件部分地支撑后表面。用于提供静电力的卡盘的有效表面的投影面积与后表面的质量保证区域的面积的面积比为0.5至1.0。活性表面离后表面超过20μm。支撑构件被构造成仅支撑包括在质量保证区域外部限定外部部分的四个侧面中的至少两个的区域。

9. 发明申请

US20050024630A1 Device for examining end part 审中-公开
标题翻译：检查端部的装置
公开(公告)号：US20050024630A1
公开(公告)日：2005-02-03
申请号：US10833038
申请日：2004-04-28
申请人： Toshiki Ohno , Hirotoshi Ise , Masato Toyota , Toshio Komemura , Hidefumi Sakita , Suekazu Nakashima , Koji Matsuda
发明人： Toshiki Ohno , Hirotoshi Ise , Masato Toyota , Toshio Komemura , Hidefumi Sakita , Suekazu Nakashima , Koji Matsuda
IPC分类号： G01B11/00 , G01N21/89 , G01N21/95 , H01L21/66 , G01N21/88
CPC分类号： G01N21/9503
摘要： A device for examining an end part according to the present invention includes a light projecting portion, a light receiving portion, a displacement sensor amplifier, and a data processing apparatus. The light projecting portion projects light on the end part of a semiconductor wafer. The light receiving portion receives specular reflected light reflected from the end part of the semiconductor wafer. The displacement sensor amplifier and the data processing apparatus calculate the displacement amount of the end part of the semiconductor wafer by a change in the distribution of the quantity of the specular reflected light received by the light receiving portion. Thus, the device for examining an end part can be reduced in size and simplified. Additionally, the device for examining an end part can be obtained, with which a change of the material of the end part of a measurement target is hardly detected as defects falsely.
摘要翻译：根据本发明的用于检查端部的装置包括光投射部分，光接收部分，位移传感器放大器和数据处理装置。光投射部分在半导体晶片的端部上投射光。光接收部分接收从半导体晶片的端部反射的镜面反射光。位移传感器放大器和数据处理装置通过光接收部分接收的镜面反射光量的分布变化来计算半导体晶片的端部的位移量。因此，用于检查端部的装置可以减小尺寸并简化。此外，可以获得用于检查端部的装置，由此几乎不能将测量对象的端部的材料的变化几乎不被错误地检测为缺陷。

10. 发明授权

US07137352B2 Plasma processing system in which wafer is retained by electrostatic chuck 失效
标题翻译：其中晶片由静电卡盘保持的等离子体处理系统
公开(公告)号：US07137352B2
公开(公告)日：2006-11-21
申请号：US09901038
申请日：2001-07-10
申请人： Toshihiro Yamashita , Hirotoshi Ise
发明人： Toshihiro Yamashita , Hirotoshi Ise
IPC分类号： H01L21/302
CPC分类号： H01L21/6833
摘要： A plasma processing system comprises a processing chamber into and from which processing gas is inlet and outlet; a pair of electrodes disposed so as to mutually oppose within the processing chamber; a RF feeding apparatus for generating plasma between the pair of electrodes; a retaining/removal apparatus for retaining a substrate to be processed on and removal from a sample table while one of the pair of electrodes is taken as the sample table; and a detection apparatus for detecting the electrostatic-chucking state of the substrate and for detecting removal state of electrical charges from the substrate, on the basis of variations in impedance arising between the sample table and the substrate.
摘要翻译：等离子体处理系统包括处理室，处理气体是进出口; 一对电极，设置成在处理室内相互对置; 用于在所述一对电极之间产生等离子体的RF馈送装置; 保持/去除装置，用于将一对电极中的一个作为样品台，将待处理的基板保持在样品台上并从样品台移除; 以及检测装置，用于基于在样品台和基板之间产生的阻抗的变化来检测基板的静电夹持状态和用于检测来自基板的电荷的去除状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式