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1. 发明授权

US06768542B2 Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device 失效
标题翻译：待处理基板缺陷检查装置及制造半导体装置的方法
公开(公告)号：US06768542B2
公开(公告)日：2004-07-27
申请号：US10219292
申请日：2002-08-16
申请人： Hirotoshi Ise , Toshiki Oono , Yasuhiro Kimura , Toshio Komemura , Masato Toyota , Toshihiko Noguchi
发明人： Hirotoshi Ise , Toshiki Oono , Yasuhiro Kimura , Toshio Komemura , Masato Toyota , Toshihiko Noguchi
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/9503
摘要： A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.
摘要翻译：用于晶片的缺陷检查装置内置在用于在半导体制造工艺中定位作为待处理基板的晶片1的定位装置中。在保持在真空保持基座2上的晶片上照射光从晶片定位位置和接收散射光的位置旋转至少一个旋转晶片。操作单元14和控制单元15判断如果散射光的强度超过预定阈值，则在晶片1上检测到缺陷。

2. 发明授权

US06993854B2 Centrifugal dryer, manufacturing method for semiconductor device and semiconductor manufacturing apparatus 有权
公开(公告)号：US06993854B2
公开(公告)日：2006-02-07
申请号：US10131246
申请日：2002-04-25
申请人： Hirotoshi Ise , Toshiki Oono , Tatsuo Mizuno
发明人： Hirotoshi Ise , Toshiki Oono , Tatsuo Mizuno
IPC分类号： F26B17/24
CPC分类号： H01L21/67253 , H01L21/67034
摘要： A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

3. 发明授权

US06864982B2 Gas analyzing method and gas analyzer for semiconductor treater 失效
标题翻译：半导体处理器气体分析方法和气体分析仪
公开(公告)号：US06864982B2
公开(公告)日：2005-03-08
申请号：US10162882
申请日：2002-06-06
申请人： Minoru Hanazaki , Toshiki Oono
发明人： Minoru Hanazaki , Toshiki Oono
IPC分类号： G01N21/73 , G01N21/68 , G01N33/00 , H01J37/32 , H01L21/302 , H01L21/3065 , G01N21/00
CPC分类号： H01J37/32935 , G01N21/68 , G01N33/0011
摘要： A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.
摘要翻译：提供一种用于半导体处理器的气体分析器，其能够监测影响半导体处理器原位处理性的气体成分的泄漏或变化。在半导体处理器的室的外壁上设置管道，用于从室中取出要分析的气体。气体分析室通过管道存储待分析的气体。排气形成部安装在气体分析室附近。放电形成部包括产生高频的高频发生线圈，在气体分析室内形成待分析气体的等离子体。该气体分析器还包括分析分析气体的等离子体的发射波长的光谱仪。

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