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1. 发明申请

US20120025874A1 SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME 有权
标题翻译：具有切换元件和自由轮二极管的半导体器件及其控制方法
公开(公告)号：US20120025874A1
公开(公告)日：2012-02-02
申请号：US13190798
申请日：2011-07-26
申请人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
发明人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
IPC分类号： H03K17/06 , H01L29/739
CPC分类号： H01L29/7813 , H01L27/0629 , H01L27/0635 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4983 , H01L29/66734 , H01L29/7391 , H01L29/7393 , H01L29/7397 , H01L29/7398 , H01L29/7805 , H01L29/7819 , H01L29/7825 , H01L29/7831 , H01L29/861 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
摘要翻译：一种半导体器件包括：具有漂移层的开关元件; 基地区在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

2. 发明授权

US08890252B2 Semiconductor device having switching element and free wheel diode and method for controlling the same 有权
标题翻译：具有开关元件和续流二极管的半导体器件及其控制方法
公开(公告)号：US08890252B2
公开(公告)日：2014-11-18
申请号：US13190798
申请日：2011-07-26
申请人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
发明人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
IPC分类号： H01L21/70 , H01L21/78 , H01L29/739 , H01L29/78 , H01L29/10 , H01L29/40 , H01L29/49 , H01L29/66 , H01L29/06 , H01L29/423 , H01L29/861 , H02M7/00
CPC分类号： H01L29/7813 , H01L27/0629 , H01L27/0635 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4983 , H01L29/66734 , H01L29/7391 , H01L29/7393 , H01L29/7397 , H01L29/7398 , H01L29/7805 , H01L29/7819 , H01L29/7825 , H01L29/7831 , H01L29/861 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
摘要翻译：一种半导体器件包括：具有漂移层的开关元件; 基地区在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

3. 发明授权

US08384153B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08384153B2
公开(公告)日：2013-02-26
申请号：US13177707
申请日：2011-07-07
申请人： Tsuyoshi Yamamoto , Masakiyo Sumitomo , Hitoshi Yamaguchi , Nozomu Akagi , Yuma Kagata
发明人： Tsuyoshi Yamamoto , Masakiyo Sumitomo , Hitoshi Yamaguchi , Nozomu Akagi , Yuma Kagata
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/66734 , H01L29/7811
摘要： A semiconductor device includes: a substrate; multiple first and second conductive type regions on the substrate for providing a super junction structure; a channel layer on the super junction structure; a first conductive type layer in the channel layer; a contact second conductive type region in the channel layer; a gate electrode on the channel layer via a gate insulation film; a surface electrode on the channel layer; a backside electrode on the substrate opposite to the super junction structure; and an embedded second conductive type region. The embedded second conductive type region is disposed in a corresponding second conductive type region, protrudes into the channel layer, and contacts the contact second conductive type region. The embedded second conductive type region has an impurity concentration higher than the channel layer, and has a maximum impurity concentration at a position in the corresponding second conductive type region.
摘要翻译：半导体器件包括：衬底; 用于提供超结结构的衬底上的多个第一和第二导电类型区域; 超级结结构上的沟道层; 沟道层中的第一导电类型层; 沟道层中的接触第二导电类型区域; 通过栅极绝缘膜在沟道层上形成栅电极; 沟道层上的表面电极; 衬底上的与超结结构相反的背面电极; 和嵌入式第二导电类型区域。嵌入的第二导电类型区域设置在相应的第二导电类型区域中，突出到沟道层中，并且与接触第二导电类型区域接触。嵌入的第二导电类型区域的杂质浓度高于沟道层，并且在相应的第二导电类型区域的位置具有最大的杂质浓度。

4. 发明申请

US20090159963A1 Semiconductor device including a plurality of cells 有权
标题翻译：包括多个单元的半导体器件
公开(公告)号：US20090159963A1
公开(公告)日：2009-06-25
申请号：US12292351
申请日：2008-11-18
申请人： Hitoshi Yamaguchi , Tsuyoshi Yamamoto
发明人： Hitoshi Yamaguchi , Tsuyoshi Yamamoto
IPC分类号： H01L27/06
CPC分类号： H01L29/7815 , H01L27/088 , H01L29/0634 , H01L29/1095 , H01L29/7813 , H01L29/7826
摘要： A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor.
摘要翻译：半导体器件包括绝缘栅晶体管和电阻器。绝缘栅晶体管包括用于向负载提供电流的多个第一单元和用于检测在第一单元中流动的电流的第二单元。所述多个第一单元的栅极端子与所述第二单元的栅极端子耦合，并且所述多个第一单元的源极端子与所述第二单元的源极端子耦合在较低电位侧。电阻器具有与第二单元的漏极端子耦合的第一端子和与较高电位侧的第一单元的漏极端子耦合的第二端子。绝缘栅极晶体管的栅极电压基于电阻器的电位进行反馈控制。

5. 发明授权

US07932553B2 Semiconductor device including a plurality of cells 有权
标题翻译：包括多个单元的半导体器件
公开(公告)号：US07932553B2
公开(公告)日：2011-04-26
申请号：US12292351
申请日：2008-11-18
申请人： Hitoshi Yamaguchi , Tsuyoshi Yamamoto
发明人： Hitoshi Yamaguchi , Tsuyoshi Yamamoto
IPC分类号： H01L29/732
CPC分类号： H01L29/7815 , H01L27/088 , H01L29/0634 , H01L29/1095 , H01L29/7813 , H01L29/7826
摘要： A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor.
摘要翻译：半导体器件包括绝缘栅晶体管和电阻器。绝缘栅晶体管包括用于向负载提供电流的多个第一单元和用于检测在第一单元中流动的电流的第二单元。所述多个第一单元的栅极端子与所述第二单元的栅极端子耦合，并且所述多个第一单元的源极端子与所述第二单元的源极端子耦合在较低电位侧。电阻器具有与第二单元的漏极端子耦合的第一端子和与较高电位侧的第一单元的漏极端子耦合的第二端子。绝缘栅极晶体管的栅极电压基于电阻器的电位进行反馈控制。

6. 发明申请

US20130005318A1 RADIO EQUIPMENT DEVICE SHARING DEVICE 审中-公开
标题翻译：无线电设备共享设备
公开(公告)号：US20130005318A1
公开(公告)日：2013-01-03
申请号：US13519702
申请日：2010-12-27
申请人： Masayuki Motegi , Yoshitsugu Shimazu , Hidehiko Oyane , Tsuyoshi Yamamoto
发明人： Masayuki Motegi , Yoshitsugu Shimazu , Hidehiko Oyane , Tsuyoshi Yamamoto
IPC分类号： H04W4/00
CPC分类号： H04W24/08 , H04W88/10 , H04W92/12
摘要： In a BRE300, an RF interface for transmitting and receiving an RF signal is used for communication with a MDE 200 and a digital signal interface for transmitting and receiving a digital signal in accordance with CPRI is used for communication with BDE 300. The BRE 300 includes a monitoring signal interface configured to notify the MDE 200 of a monitoring signal indicating a state of the radio unit 50. The signal transmitted and received through the monitoring signal interface is a ground signal and is of type different from types of signals transmitted and received by the RF interface and the digital signal interface.
摘要翻译：在BRE300中，用于发送和接收RF信号的RF接口用于与MDE 200进行通信，并且用于根据CPRI发送和接收数字信号的数字信号接口用于与BDE 300进行通信。BRE 300包括监视信号接口，被配置为向MDE 200通知指示无线电单元50的状态的监视信号。通过监视信号接口发送和接收的信号是接地信号，并且类型与由信号发送和接收的信号的类型不同 RF接口和数字信号接口。

7. 发明授权

US08285088B2 Wavelength selective switch 有权
标题翻译：波长选择开关
公开(公告)号：US08285088B2
公开(公告)日：2012-10-09
申请号：US12068351
申请日：2008-02-05
申请人： Hirofumi Aota , Kohei Shibata , Tsuyoshi Yamamoto
发明人： Hirofumi Aota , Kohei Shibata , Tsuyoshi Yamamoto
IPC分类号： G02B6/12 , G02B6/34 , G02B7/02
CPC分类号： G02B6/29311 , G02B6/29313 , G02B6/3512 , G02B6/3548 , G02B6/356 , G02B6/3586 , H04J14/0201
摘要： A wavelength selective switch for suppressing degradation of pass band characteristics when the temperature rises. The wavelength selective switch includes a spectroscopic element for separating input light and providing angular dispersion depending on wavelengths, a collective lens for gathering light output from the spectroscopic element, and a movable reflection block which includes a plurality of mirrors arranged in the direction of angular dispersion made by the spectroscopic element, changes the angles of the mirrors in a direction differing from the direction of angular dispersion, and reflects the light coming from the collective lens. The collective lens is fixed at one end with respect to the direction of angular dispersion, expands with heat in a direction in which it is not fixed when the temperature rises, and outputs the light in a direction opposite to the direction in which the angle of light output from the spectroscopic element changes.
摘要翻译：一种用于当温度升高时抑制通带特性劣化的波长选择开关。波长选择开关包括用于分离输入光并提供取决于波长的角度色散的分光元件，用于聚集从分光元件输出的光的集体透镜，以及可移动反射块，其包括沿角度分散方向布置的多个反射镜由分光元件制成的反射镜的角度沿与角度分散方向不同的方向改变，并且反射来自聚光透镜的光。集体透镜相对于角度分散的方向固定在一端，当温度升高时，其在不固定的方向上以热量方式膨胀，并且沿与该角度的方向相反的方向输出光分光元件的光输出变化。

8. 发明授权

US08232125B2 Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权
标题翻译：具有p型量子点结构的有源层的光半导体器件及其制造方法
公开(公告)号：US08232125B2
公开(公告)日：2012-07-31
申请号：US12457677
申请日：2009-06-18
申请人： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
发明人： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/06226 , H01S5/0655 , H01S5/3086 , H01S5/3412 , H01S5/34306 , H01S5/34353 , H01S2301/18
摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.
摘要翻译：具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。上覆层设置在有源层上。上包层由半导体材料制成，并且包括脊部和盖部。脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。如果下包层为n型，则电容减小区域至少到达下包层的上表面。

9. 发明授权

US08068744B2 Optical transmitter 有权
标题翻译：光发射机
公开(公告)号：US08068744B2
公开(公告)日：2011-11-29
申请号：US12662726
申请日：2010-04-30
申请人： Suguru Akiyama , Tsuyoshi Yamamoto
发明人： Suguru Akiyama , Tsuyoshi Yamamoto
IPC分类号： H04B10/04 , H04J14/02
CPC分类号： H04B10/58 , G02B6/12004 , G02B6/12007 , G02F1/3519 , H01S5/0078 , H04B10/25 , H04B10/503 , H04B10/504
摘要： In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser.
摘要翻译：在包括直接调制激光器和设置在直接调制激光器的后级上的波长滤波器的光发射机中，波长滤波器具有用于输入从直接调制的激光器输出的调制光的调制光输入端口，滤波器透射光输出用于输出调制光中包括在滤波器传输频带中的波长的光作为滤波器透射光的端口，以及与调制光输入端口和滤光透射光输出端口分离设置的滤光器截止光输出端口，并输出具有波长被包含在作为滤波器截止光的调制光中的滤波器截止频带中，并且滤波器传输频带的峰值被设置在从直接调制的激光器输出的调制光谱的峰值的较短波侧。

10. 发明授权

US08068273B2 Demodulator 有权
标题翻译：解调器
公开(公告)号：US08068273B2
公开(公告)日：2011-11-29
申请号：US12571787
申请日：2009-10-01
申请人： Takashi Shimizu , Koji Terada , Tsuyoshi Yamamoto
发明人： Takashi Shimizu , Koji Terada , Tsuyoshi Yamamoto
IPC分类号： G02F2/00 , H04B10/04
CPC分类号： G02F1/21 , G02F2001/215 , G02F2203/20 , G02F2203/21 , H04L27/2071 , H04L27/223
摘要： A demodulator and method are provided. The demodulator for demodulating an optical signal, includes a splitter that splits a differential phase modulation signal into a first split light component and a second split light component, couples the first split light component to a first optical path and the second split light component to a second optical path, a first medium disposed on the first optical path, a second medium disposed on the second optical path and having a refractive index different from that of the first medium, and a combiner that combines the first split light component that has passed through the first medium and the second split light component that has passed through the second medium, wherein one of the first split light component and the second split light component is delayed in relation to the other.
摘要翻译：提供了一种解调器和方法。用于解调光信号的解调器包括将差分相位调制信号分离成第一分光元件和第二分光元件的分光器，将第一分光元件耦合到第一光路，将第二分光元件耦合到第二光路，布置在第一光路上的第一介质，设置在第二光路上并且具有与第一介质不同的折射率的第二介质，以及组合器，其组合已经穿过的第一分裂光分量通过第二介质的第一中分光元件和第二分光元件，其中第一分光元件和第二分光元件中的一个相对于另一个延迟。

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