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1. 发明授权

US07880392B2 Plasma producing method and apparatus as well as plasma processing apparatus 有权
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US07880392B2
公开(公告)日：2011-02-01
申请号：US11586583
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： H01J37/32954 , H01J37/321 , H01J37/32174
摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要翻译：等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是从天线施加到腔室中的气体以产生电感耦合等离子体。多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

2. 发明申请

US20100189921A1 PLASMA GENERATING METHOD, PLASMA GENERATING APPARATUS, AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体发生方法，等离子体发生装置和等离子体处理装置
公开(公告)号：US20100189921A1
公开(公告)日：2010-07-29
申请号：US12753379
申请日：2010-04-02
申请人： Hiroshige DEGUCHI , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige DEGUCHI , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： B01J19/08
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要翻译：使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。天线2彼此相同。通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被分割为数字在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

3. 发明申请

US20070193512A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体产生方法，等离子体产生装置和等离子体处理装置
公开(公告)号：US20070193512A1
公开(公告)日：2007-08-23
申请号：US11707862
申请日：2007-02-20
申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)
摘要翻译：在等离子体发生室1中或在具有0.4 [m]侧的多个立方体空间C中的每一个中分配一个或多个高频天线并将其布置在具有0.4 [m]侧的一个立方体C中，多个立体空间中的相邻的空间彼此连续，而不形成间隙。每个立方体空间C中的高频天线的总长度L [m]被设定为满足关于电感耦合等离子体产生（0.2 / P）

4. 发明申请

US20070144672A1 Plasma producing method and apparatus as well as plasma processing apparatus 审中-公开
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070144672A1
公开(公告)日：2007-06-28
申请号：US11586508
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/509 , H01J37/321 , H01J37/32183
摘要： Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 Ω or lower.
摘要翻译：等离子体制造方法和装置以及包括等离子体制造装置的等离子体处理装置，其中一个或多个高频天线布置在等离子体产生室中，并且高频电力从天线施加到腔室中的气体 s）以产生电感耦合等离子体。高频天线的阻抗设定在45Ω以下的范围内。

5. 发明申请

US20070193513A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体产生方法，等离子体产生装置和等离子体处理装置
公开(公告)号：US20070193513A1
公开(公告)日：2007-08-23
申请号：US11708058
申请日：2007-02-20
申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要翻译：使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。天线2彼此相同。通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被划分为多个在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

6. 发明申请

US20070095287A1 Plasma producing method and apparatus as well as plasma processing apparatus 有权
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070095287A1
公开(公告)日：2007-05-03
申请号：US11586583
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： H01J37/32954 , H01J37/321 , H01J37/32174
摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要翻译：等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是从天线施加到腔室中的气体以产生电感耦合等离子体。多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

7. 发明申请

US20070144440A1 Plasma producing method and apparatus as well as plasma processing apparatus 审中-公开
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070144440A1
公开(公告)日：2007-06-28
申请号：US11586504
申请日：2006-10-26
申请人： Hitoshi Yoneda , Hiroshige Deguchi , Kenji Kato , Yuichi Setsuhara
发明人： Hitoshi Yoneda , Hiroshige Deguchi , Kenji Kato , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/321 , H01J37/3211
摘要： Plasma producing method and apparatus as well as plasma processing apparatus utilizing the plasma producing apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a matching box and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device supplies the high-frequency power to each antenna from terminals of the antennas on the same side.
摘要翻译：等离子体制造方法和装置以及利用等离子体制造装置的等离子体处理装置，其中多个高频天线布置在等离子体产生室中，以及从高频电源装置（包括电源，匹配盒等）从天线施加到腔室中的气体以产生电感耦合等离子体。多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。高频电源装置在同一侧的天线端子向每个天线提供高频电力。

8. 发明授权

US09078336B2 Radio-frequency antenna unit and plasma processing apparatus 有权
标题翻译：射频天线单元和等离子体处理装置
公开(公告)号：US09078336B2
公开(公告)日：2015-07-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01Q1/36 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

9. 发明授权

US08916034B2 Thin-film forming sputtering system 有权
标题翻译：薄膜形成溅射系统
公开(公告)号：US08916034B2
公开(公告)日：2014-12-23
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：能够高速溅射工艺的薄膜形成溅射系统。薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

10. 发明申请

US20120031562A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120031562A1
公开(公告)日：2012-02-09
申请号：US13255200
申请日：2010-03-10
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.
摘要翻译：本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。根据本发明的等离子体处理装置包括真空容器，放置在真空容器的壁的内表面和外表面之间的射频天线以及用于将射频天线与真空容器的内部空间。与使用外部天线的装置相比，本装置可以在真空容器中引起更强的磁场。分离部件具有防止射频天线由真空容器内产生的等离子体进行溅射，抑制高频天线的温度上升，防止形成粒子的效果。

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