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1. 发明授权

US07003008B2 Semiconductor laser light emitting device 失效
标题翻译：半导体激光发光装置
公开(公告)号：US07003008B2
公开(公告)日：2006-02-21
申请号：US11074273
申请日：2005-03-07
申请人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
发明人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/221 , H01S5/2218 , H01S5/2231
摘要： Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1−xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15
摘要翻译：公开了一种半导体激光发光装置，其包括：由包含选自铝，镓，铟和硼中的至少一种的III族氮化物半导体膜的堆叠构成的层叠膜; 其中所述层叠膜的上部形成为脊状条纹，以形成电流注入区域; 形成在脊状条纹的两侧的电流非注入区域; 并且当前非注入区域的至少一部分由化学式Al x 1 Ga x-x N表示的材料制成（0≤x≤1.0 ）。在该器件中，Al的分量比“x”被指定为0.3 <= x <= 1.0的范围内的值，使得半导体激光发光器件被配置为引导型半导体激光发光器件; Al的分量比“x”被规定在0.15

2. 发明申请

US20050147144A1 Semiconductor laser light emitting device 失效
标题翻译：半导体激光发光装置
公开(公告)号：US20050147144A1
公开(公告)日：2005-07-07
申请号：US11074273
申请日：2005-03-07
申请人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
发明人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
IPC分类号： H01S5/227 , H01S5/065 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/32341 , H01S5/221 , H01S5/2218 , H01S5/2231
摘要： Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15
摘要翻译：公开了一种半导体激光发光装置，其包括：由包含选自铝，镓，铟和硼中的至少一种的III族氮化物半导体膜的堆叠构成的层叠膜; 其中所述层叠膜的上部形成为脊状条纹，以形成电流注入区域; 形成在脊状条纹的两侧的电流非注入区域; 并且当前非注入区域的至少一部分由化学式Al x 1 Ga x-x N表示的材料制成（0≤x≤1.0 ）。在该器件中，Al的分量比“x”被指定为0.3 <= x <= 1.0的范围内的值，使得半导体激光发光器件被配置为引导型半导体激光发光器件; Al的分量比“x”被规定在0.15

3. 发明授权

US06865203B2 Semiconductor laser light emitting device 失效
标题翻译：半导体激光发光装置
公开(公告)号：US06865203B2
公开(公告)日：2005-03-08
申请号：US09815670
申请日：2001-03-23
申请人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
发明人： Hiroshi Yoshida , Misuzu Abe , Maho Ohara , Takashi Yamaguchi , Hiroshi Nakajima
IPC分类号： H01S5/227 , H01S5/065 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/32341 , H01S5/221 , H01S5/2218 , H01S5/2231
摘要： Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15
摘要翻译：公开了一种半导体激光发光装置，其包括：由包含选自铝，镓，铟和硼中的至少一种的III族氮化物半导体膜的堆叠构成的层叠膜; 其中所述层叠膜的上部形成为脊状条纹，以形成电流注入区域; 形成在脊状条纹的两侧的电流非注入区域; 并且当前非注入区域的至少一部分由化学式Al x Ga 1-x N（0 <= x <= 1.0）表示的材料制成。在该器件中，Al的分量比“x”被指定为0.3 <= x <= 1.0的范围内的值，使得半导体激光发光器件被配置为引导型半导体激光发光器件; Al的分量比“x”被规定在0.15

4. 发明授权

US06921673B2 Nitride semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06921673B2
公开(公告)日：2005-07-26
申请号：US10276748
申请日：2002-03-27
申请人： Toshimasa Kobayashi , Katsunori Yanashima , Takashi Yamaguchi , Hiroshi Nakajima
发明人： Toshimasa Kobayashi , Katsunori Yanashima , Takashi Yamaguchi , Hiroshi Nakajima
IPC分类号： H01L33/16 , H01L21/20 , H01L21/205 , H01L31/10 , H01L31/18 , H01L33/02 , H01L33/14 , H01L33/32 , H01S5/02 , H01S5/026 , H01S5/22 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L31/1852 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/32341 , H01S2304/12 , Y02E10/544
摘要： Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WL of a lateral growth region is larger with respect to a pitch WP of the seed crystal potion (11), compared with conventional configurations.

5. 发明申请

US20050184302A1 Nitride semiconductor device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20050184302A1
公开(公告)日：2005-08-25
申请号：US11112295
申请日：2005-04-22
申请人： Toshimasa Kobayashi , Katsunori Yanashima , Takashi Yamaguchi , Hiroshi Nakajima
发明人： Toshimasa Kobayashi , Katsunori Yanashima , Takashi Yamaguchi , Hiroshi Nakajima
IPC分类号： H01L21/20 , H01L21/336 , H01L29/20 , H01L33/00 , H01M2/02 , H01M4/02 , H01M4/48 , H01M4/52 , H01M4/62 , H01M6/10 , H01M6/16 , H01M10/40 , H01M10/42 , H01L29/221
CPC分类号： C30B25/04 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L29/2003 , H01L29/66522 , H01L33/007
摘要： Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WL of a lateral growth region is larger with respect to a pitch WP of the seed crystal potion (11), compared with conventional configurations.
摘要翻译：提供了一种在设备的设计和制造中具有高可靠性和高灵活性的氮化物半导体器件。氮化物半导体器件包括在蓝宝石衬底（10）上形成并在其一个侧表面上具有掩模（12）的晶种部分（11）和在蓝宝石衬底（10）上生长的GaN层（15）和籽晶部分（11）通过外延横向过度生长。 GaN层（15）仅从没有被掩模（12）覆盖的晶种部分（11）的暴露的侧表面生长，所以GaN层（15）的横向生长被不对称地进行。由此，在GaN层（15）的厚度方向上，在晶种部分（11）和掩模（12）之间的边界附近形成会聚部分（32）。因此，由于会聚部32形成在与基板的表面平行的方向上离开相邻的晶种部11之间的中心的位置，所以宽度W L是与常规构造相比，晶种部分（11）的横向生长区域相对于间距W P P较大。

6. 发明申请

US20140186743A1 FUEL CELL CATALYST LAYER AND USES THEREOF 有权
标题翻译：燃料电池催化层及其用途
公开(公告)号：US20140186743A1
公开(公告)日：2014-07-03
申请号：US14240106
申请日：2011-09-09
申请人： Yasuaki Wakizaka , Ryuji Monden , Takuya Imai , Hiroshi Nakajima
发明人： Yasuaki Wakizaka , Ryuji Monden , Takuya Imai , Hiroshi Nakajima
IPC分类号： H01M4/86
CPC分类号： H01M4/8657 , H01M4/8605 , H01M4/925 , H01M2008/1095 , Y02E60/50
摘要： Provided is a fuel cell catalyst layer which has a catalytic performance equivalent to or higher than fuel cell catalyst layers containing platinum alone and which is inexpensive. The fuel cell catalyst layer of the present invention includes a metal oxycarbonitride-containing layer (I) and a platinum-containing layer (II). It is preferable that the mass ratio per unit area of the metal oxycarbonitride in the layer (I) to platinum in the layer (II) (metal oxycarbonitride/platinum) is 2 to 500. It is preferable that the mass per unit area of platinum in the layer (II) is 0.005 to 0.2 mg/cm2.
摘要翻译：本发明提供一种燃料电池用催化剂层，该催化剂层的催化性能等于或高于单独含有铂的燃料电池催化剂层，其价格便宜。本发明的燃料电池催化剂层包括含有含碳氮氧化物的层（I）和含铂层（II）。层（I）中的层（I）中的铂的金属碳氮氧化物的单位面积质量比（金属碳氮氧化物/铂）优选为2〜500。优选铂单位面积的质量在层（II）中为0.005〜0.2mg / cm 2。

7. 发明授权

US08590150B2 Impeller manufacturing method 有权
标题翻译：叶轮制造方法
公开(公告)号：US08590150B2
公开(公告)日：2013-11-26
申请号：US13805021
申请日：2011-10-25
申请人： Khanhson Pham , Hiroshi Nakajima
发明人： Khanhson Pham , Hiroshi Nakajima
IPC分类号： B21D51/16
CPC分类号： B23K31/02 , B23K2101/001 , F04D29/023 , F04D29/284 , F05D2230/232 , Y10T29/49316 , Y10T29/49968
摘要： The present invention relates to a method of joining a hub 11 and a shroud 12 of an impeller 10, either one of which has blades 13 integrally formed thereon, by welding. During the welding, in an upright state in which the hub 11 is placed to face a mount surface, the hub 11 and the shroud 12 are placed on top of each other to form an assembled body 10. Welding is performed on the assembled body 10 covered with a heat insulating jacket 30(a to g), the jacket 30 covering the assembled body 10 except an open region (OP) and an inflow port 14IN required for welding. When welding of one open region OP is completed, a new open region OP is formed by moving the heat insulating jacket 30 with respect to the assembled body, and then the next welding is performed.
摘要翻译：本发明涉及一种将叶轮10的轮毂11和护罩12连接起来的方法，叶轮10中的任一个具有通过焊接一体形成的叶片13。在焊接期间，在轮毂11被放置成面向安装表面的直立状态下，轮毂11和护罩12被放置在彼此的顶部以形成组装体10.在组装体10上进行焊接覆盖有隔热护套30（a至g），除了开放区域（OP）和焊接所需的流入端口14IN之外，护套30覆盖组装体10。当一个开放区域OP的焊接完成时，通过相对于组装体移动隔热套30而形成新的开放区域OP，然后进行下一次焊接。

8. 发明授权

US08547547B2 Optical surface defect inspection apparatus and optical surface defect inspection method 有权
标题翻译：光学表面缺陷检查装置和光学表面缺陷检查方法
公开(公告)号：US08547547B2
公开(公告)日：2013-10-01
申请号：US13213116
申请日：2011-08-19
申请人： Shintaro Tamura , Masanori Fukawa , Ayumu Ishihara , Kenichi Shitara , Hiroshi Nakajima
发明人： Shintaro Tamura , Masanori Fukawa , Ayumu Ishihara , Kenichi Shitara , Hiroshi Nakajima
IPC分类号： G01N21/00
CPC分类号： G01N21/00 , G01N21/8806 , G01N21/9501 , G01N21/9506 , G01N2201/0833
摘要： The present invention is to provide an optical surface defect inspection apparatus or an optical surface defect inspection method that can improve a signal-to-noise ratio according to a multi-segmented cell method without performing autofocus operations, and can implement highly sensitive inspection. The present invention is an optical surface defect inspection apparatus or an optical surface defect inspection method in which an inspection beam is applied onto a test subject, an image of a scattered light from the surface of the test subject is formed on a photo-detector, and a defect on the surface of the test subject is inspected based on an output from the photo-detector. The photo-detector has an optical fiber bundle. One end thereof forms a circular light receiving surface to receive the scattered light. The other end thereof is connected to a plurality of light receiving devices. The optical fiber bundle is divided into a plurality of fan-shaped cells in the light receiving surface, and connected to the light emitting devices in units of the cells for performing the inspection based on the outputs of the plurality of cells.
摘要翻译：本发明提供一种光学表面缺陷检查装置或光学表面缺陷检查方法，其可以在不进行自动对焦操作的情况下，根据多分段单元法提高信噪比，并且可以实现高度敏感的检查。本发明是一种光学表面缺陷检查装置或光学表面缺陷检查方法，其中将检查光束施加到测试对象上，在光检测器上形成来自受检者表面的散射光的图像，并且基于光电检测器的输出来检查测试对象的表面上的缺陷。光检测器具有光纤束。其一端形成圆形光接收表面以接收散射光。其另一端连接到多个光接收装置。光纤束在光接收表面被分成多个扇形单元，并且以基于多个单元的输出执行检查的单元为单位连接到发光器件。

9. 发明授权

US08477818B2 Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device 有权
标题翻译：氮化镓系半导体激光器件及其制造方法
公开(公告)号：US08477818B2
公开(公告)日：2013-07-02
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚层。

10. 发明授权

US08286475B2 Transducer assemblies for downhole tools 有权
标题翻译：用于井下工具的传感器组件
公开(公告)号：US08286475B2
公开(公告)日：2012-10-16
申请号：US12494267
申请日：2009-06-30
申请人： Hiroshi Nakajima , Toshihiro Kinoshita , Takeo Fujihara , Yasuo Kanaya
发明人： Hiroshi Nakajima , Toshihiro Kinoshita , Takeo Fujihara , Yasuo Kanaya
IPC分类号： E21B47/06
CPC分类号： E21B47/011 , G01V1/186
摘要： Methods and related systems are described relating to a sealed acoustic transducer assembly for use in a wellbore is provided. One or more acoustic transducer elements, which can be receivers or transmitters, are housed in an elongated fluid filled sealed container. The sealed container is adapted to be removeably mounted to a portion of a drill collar. The container, which for example can be made of thin corrugated metal or rubber, includes flexible portions along the length of the container which allows for volume changes when exposed to changes in external pressure and/or temperature.
摘要翻译：描述了与在井眼中使用的密封声换能器组件相关的方法和相关系统。可以将接收器或发射器的一个或多个声学换能器元件容纳在细长的流体填充的密封容器中。密封容器适于可拆卸地安装到钻铤的一部分。容器例如可以由薄波纹金属或橡胶制成，包括沿容器长度的柔性部分，当暴露于外部压力和/或温度变化时允许体积变化。

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