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1. 发明授权

US07352044B2 Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film 失效
标题翻译：光电传感器，光电传感器设备和硅化铁膜
公开(公告)号：US07352044B2
公开(公告)日：2008-04-01
申请号：US10542147
申请日：2004-01-16
申请人： Hiroshi Yamada , Hisao Morooka , Kazuo Nishi
发明人： Hiroshi Yamada , Hisao Morooka , Kazuo Nishi
IPC分类号： H01L31/00
CPC分类号： H01L31/0264 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.
摘要翻译：太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。

2. 发明申请

US20060049478A1 Photoelectric converter, photoelectric conversion device and iron silicide film 失效
标题翻译：光电转换器，光电转换装置和硅化铁膜
公开(公告)号：US20060049478A1
公开(公告)日：2006-03-09
申请号：US10542147
申请日：2004-01-16
申请人： Hiroshi Yamada , Hisao Morooka , Kazuo Nishi
发明人： Hiroshi Yamada , Hisao Morooka , Kazuo Nishi
IPC分类号： H01L31/105 , H01L31/06 , H01L31/00
CPC分类号： H01L31/0264 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.
摘要翻译：太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。

3. 发明授权

US07354857B2 Method of making iron silicide and method of making photoelectric transducer 失效
标题翻译：制造硅化铁的方法和制造光电传感器的方法
公开(公告)号：US07354857B2
公开(公告)日：2008-04-08
申请号：US11206999
申请日：2005-08-19
申请人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
发明人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
IPC分类号： H01L21/44
CPC分类号： C23C16/42 , C23C16/505 , H01L21/28556 , Y02E10/548
摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
摘要翻译：太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上混合在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

4. 发明申请

US20060003585A1 Method of making iron silicide and method of making photoelectric transducer 失效
标题翻译：制造硅化铁的方法和制造光电传感器的方法
公开(公告)号：US20060003585A1
公开(公告)日：2006-01-05
申请号：US11206999
申请日：2005-08-19
申请人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
发明人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
IPC分类号： H01L21/44
CPC分类号： C23C16/42 , C23C16/505 , H01L21/28556 , Y02E10/548
摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
摘要翻译：太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上混合在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

5. 发明授权

US06949463B2 Method of making iron silicide and method of making photoelectric transducer 失效
标题翻译：制造硅化铁的方法和制造光电传感器的方法
公开(公告)号：US06949463B2
公开(公告)日：2005-09-27
申请号：US10756299
申请日：2004-01-14
申请人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
发明人： Hisao Morooka , Hiroshi Yamada , Kazuo Nishi
IPC分类号： H01L31/04 , C23C16/42 , C23C16/505 , H01L21/285 , H01L21/44
CPC分类号： C23C16/42 , C23C16/505 , H01L21/28556 , Y02E10/548
摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
摘要翻译：太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上混合在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

6. 发明授权

US06960718B2 Method for manufacturing a photovoltaic element 有权
标题翻译：光电元件的制造方法
公开(公告)号：US06960718B2
公开(公告)日：2005-11-01
申请号：US10400447
申请日：2003-03-28
申请人： Tatsuji Sano , Hisao Morooka , Kazuo Nishi
发明人： Tatsuji Sano , Hisao Morooka , Kazuo Nishi
IPC分类号： H01L31/075 , H01L31/18
CPC分类号： H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.
摘要翻译：在根据本发明的光电元件中，依次将第一透明导电膜，第二透明导电膜，p型半导体膜，本征半导体层，n型半导体层和背面电极堆叠在透明基板。然后，在第二透明导电膜和p型半导体层之间设置中间层，以覆盖第一透明导电膜和第二透明导电膜。

7. 发明授权

US06815259B2 Method of supporting a flexible substrate and method of manufacturing a semiconductor device 有权
标题翻译：支撑柔性基板的方法和制造半导体器件的方法
公开(公告)号：US06815259B2
公开(公告)日：2004-11-09
申请号：US09931717
申请日：2001-08-20
申请人： Hideaki Ninomiya , Hisao Morooka , Yoshihito Yamamoto , Kazuo Nishi
发明人： Hideaki Ninomiya , Hisao Morooka , Yoshihito Yamamoto , Kazuo Nishi
IPC分类号： H01L2150
CPC分类号： H01L21/6835 , H01L31/0392 , H01L31/03926 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A frame-shaped holding frame which has a small thermal expansion coefficient is used. When a complex member in which a metal material is impregnated in a ceramic material, which has a smaller thermal expansion coefficient than 10 ppm/° C., is used, a warp and a wrinkle are greatly decreased. In particular, in the case of a material with a thermal expansion coefficient of 6.5 ppm/° C. or smaller, the warp and the wrinkle are not caused. When the flexible substrate is adhered to the holding frame by an adhesive, an adhesion area may be obtained so that a sufficient strength is kept. Also, since the flexible substrate is adhered onto the upper surface of the holding frame, the thickness of the holding frame is independent on fixing of the substrate. The thickness may be set so that a mechanical strength is kept and the substrate is smoothly transferred.

8. 发明申请

US20050210666A1 Substrate holding method and method of manufacturing electronic part 有权
标题翻译：基板保持方法及其制造方法
公开(公告)号：US20050210666A1
公开(公告)日：2005-09-29
申请号：US11072989
申请日：2005-03-07
申请人： Hisao Morooka , Hideaki Ninomiya , Junichi Shimamura , Kazuo Nishi
发明人： Hisao Morooka , Hideaki Ninomiya , Junichi Shimamura , Kazuo Nishi
IPC分类号： C09J5/06 , B23P19/00 , C09J9/00 , C09J133/08 , H01L21/00 , H01L21/02 , H01L31/02 , H01L31/0236 , H01L31/04 , H01L31/18 , H05K1/00 , H05K3/00 , H05K13/00
CPC分类号： H01L31/18 , H01L21/67132 , H05K1/0393 , H05K3/0058 , Y10T29/49117 , Y10T29/4913 , Y10T29/49131 , Y10T29/49144 , Y10T29/5193 , Y10T29/53174
摘要： The present invention provides a substrate holding method capable of contributing to improvement in performance of an electronic part. A plastic film is adhered to a holding frame by using an adhesive tape having a proper gas releasing characteristic such that total quantity of gas detected when analysis using gas chromatograph mass spectrometry (dynamic HS-GC-MS) is conducted under test conditions of 180° C. and 10 minutes is 100.5 μg/g or less in n-tetradecane. In the case where the plastic film held by the holding frame is subjected to a process of manufacturing an electronic part (for example, a solar battery), even when a process accompanying generation of heat during the manufacturing process (for example, a film forming process such as plasma CVD) is performed on the plastic film, a release amount of unnecessary gas released from the adhesive tape due to the influence of the heat is suppressed, so that deterioration in the performance of the electronic part caused by the unnecessary gas is suppressed.
摘要翻译：本发明提供能够有助于提高电子部件的性能的基板保持方法。通过使用具有适当的气体释放特性的粘合带将塑料膜粘附到保持框架上，使得在使用气相色谱质谱（动态HS-GC-MS）进行分析时检测到的气体总量在180°的测试条件下进行 C.正十四烷中10分钟为100.5马克/克以下。在由保持框架保持的塑料膜经受制造电子部件（例如，太阳能电池）的处理的情况下，即使在制造过程中伴随发热的处理（例如，成膜在塑料膜上进行等离子体CVD等工序），能够抑制由于热量的影响而从粘合带释放的不需要的气体的释放量，不利气体导致的电子部件的性能下降被压制

9. 发明授权

US08373058B2 Solar cell and method of adjusting color of the same 有权
标题翻译：太阳能电池及其调色方法
公开(公告)号：US08373058B2
公开(公告)日：2013-02-12
申请号：US11362913
申请日：2006-02-28
申请人： Hisao Morooka , Takeshi Echizenya , Hirokazu Fujioka , Saki Takahashi , Kazuo Nishi
发明人： Hisao Morooka , Takeshi Echizenya , Hirokazu Fujioka , Saki Takahashi , Kazuo Nishi
IPC分类号： H01L25/00
CPC分类号： H01L31/075 , H01L31/022425 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： The present invention provides a solar cell whose external color can be adjusted so that redness is suppressed. In the case where a photoelectric conversion layer contains amorphous silicon, an optical absorption layer is provided between the photoelectric conversion layer and a reflecting electrode layer. The optical absorption layer has a light absorbing property mainly in a long wavelength range, while the photoelectric conversion layer (amorphous silicon) has a selective light absorbing property mainly in a short/medium wavelength range. Incident light (solar light) passed through the photoelectric conversion layer further passes through the optical absorption layer and, after that, is reflected by the reflecting electrode layer. That is, remaining light of the incident light absorbed by the optical absorption layer and the photoelectric conversion layer is reflected by the reflecting electrode layer. Consequently, redness of the reflection light can be suppressed more than in the case where the optical absorption layer is not provided between the photoelectric conversion layer and the reflecting electrode layer.
摘要翻译：本发明提供一种太阳能电池，其外部颜色可以被调整以抑制发红。在光电转换层包含非晶硅的情况下，在光电转换层和反射电极层之间设置光吸收层。光吸收层主要在长波长范围内具有吸光性，而光电转换层（非晶硅）主要在短/中等波长范围内具有选择性的光吸收特性。通过光电转换层的入射光（太阳光）进一步通过光吸收层，之后被反射电极层反射。也就是说，由光吸收层和光电转换层吸收的入射光的剩余光被反射电极层反射。因此，与光电转换层和反射电极层之间没有设置光吸收层的情况相比，能够抑制反射光的发红。

10. 发明授权

US07845071B2 Method of manufacturing electronic part 有权
标题翻译：制造电子零件的方法
公开(公告)号：US07845071B2
公开(公告)日：2010-12-07
申请号：US11072989
申请日：2005-03-07
申请人： Hisao Morooka , Hideaki Ninomiya , Junichi Shimamura , Kazuo Nishi
发明人： Hisao Morooka , Hideaki Ninomiya , Junichi Shimamura , Kazuo Nishi
IPC分类号： H05K3/30
CPC分类号： H01L31/18 , H01L21/67132 , H05K1/0393 , H05K3/0058 , Y10T29/49117 , Y10T29/4913 , Y10T29/49131 , Y10T29/49144 , Y10T29/5193 , Y10T29/53174
摘要： The present invention provides a substrate holding method capable of contributing to improvement in performance of an electronic part. A plastic film is adhered to a holding frame by using an adhesive tape having a proper gas releasing characteristic such that total quantity of gas detected when analysis using gas chromatograph mass spectrometry (dynamic HS-GC-MS) is conducted under test conditions of 180° C. and 10 minutes is 100.5 μg/g or less in n-tetradecane. In the case where the plastic film held by the holding frame is subjected to a process of manufacturing an electronic part (for example, a solar battery), even when a process accompanying generation of heat during the manufacturing process (for example, a film forming process such as plasma CVD) is performed on the plastic film, a release amount of unnecessary gas released from the adhesive tape due to the influence of the heat is suppressed, so that deterioration in the performance of the electronic part caused by the unnecessary gas is suppressed.
摘要翻译：本发明提供能够有助于提高电子部件的性能的基板保持方法。通过使用具有适当的气体释放特性的粘合带将塑料膜粘附到保持框架上，使得在使用气相色谱质谱（动态HS-GC-MS）进行分析时检测到的气体总量在180°的测试条件下进行 C.正十四烷中10分钟为100.5μg/ g以下。在由保持框架保持的塑料膜经受制造电子部件（例如，太阳能电池）的处理的情况下，即使在制造过程中伴随发热的处理（例如，成膜在塑料膜上进行等离子体CVD等工序），能够抑制由于热量的影响而从粘合带释放的不需要的气体的释放量，不利气体导致的电子部件的性能下降被压制

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