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1. 发明授权

US4050605A Panel assembled tank 失效
标题翻译：面板组装槽
公开(公告)号：US4050605A
公开(公告)日：1977-09-27
申请号：US690819
申请日：1976-05-27
申请人： Hiroshi Wakana , Isamu Harada , Tsutomu Honma
发明人： Hiroshi Wakana , Isamu Harada , Tsutomu Honma
IPC分类号： B65D90/02 , B65D90/08 , F16S1/10 , B65D7/24 , B65D7/46
CPC分类号： B65D90/023 , B65D90/08
摘要： A high pressure resistant and water tight panel assembled tank consisting of unit panels, each unit panel is formed with a protrusion portion in the form of a pyramid or truncated pyramid progressively increasing its height toward a center of the square wall surface of the panel and has securing flanges at the peripheries of the panel. The unit panels consist of (a) bottom wall panels of which securing flanges are folded in a direction opposite to the extending direction of the protrusion portion and (b) side wall panels of which securing flanges are folded in a direction the same as that of the protrusion portion and having partially thicker portions, and the securing flanges of the wall panels embracing sealing seats therebetween are clamped together outside of the tank to form the assembled tank. Assembled tie rods and panels for mounting supply and drain pipings are incorporated in the tank to improve the pressure resistance of the tank and to facilitate assembling, settling, piping and cleaning of the tank.
摘要翻译：由单元面板组成的高耐压防水面板组装槽，每个单元面板形成有金字塔形或截顶棱锥形状的突出部分，逐渐增加其朝向面板方形壁表面中心的高度，并具有固定法兰在面板的周边。单元面板包括（a）底壁板，其固定凸缘在与突出部分的延伸方向相反的方向上折叠，并且（b）侧壁板的固定凸缘沿着与突出部分并且具有部分较厚的部分，并且包围其间的密封座的壁板的固定凸缘被夹在一起在罐外面以形成组装的罐。用于安装供水管和排水管的组合式拉杆和板被并入罐中，以改善罐的耐压性，并且便于罐的组装，沉降，管道和清洁。

2. 发明授权

US5902395A Method for feeding granular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal 失效
标题翻译：用于提供粒状硅材料的方法，该方法中使用的进料管，以及制造硅单晶的方法
公开(公告)号：US5902395A
公开(公告)日：1999-05-11
申请号：US794542
申请日：1997-02-03
申请人： Naoki Nagai , Isamu Harada , Chihiro Tashiro , Michiaki Oda
发明人： Naoki Nagai , Isamu Harada , Chihiro Tashiro , Michiaki Oda
IPC分类号： C30B15/02
CPC分类号： C30B15/02
摘要： In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granular silicon material from the feeder to the feed pipe is repeatedly commenced and stopped so as to maintain the stagnation of the granular silicon material. The feed rate of the granular silicon material from the feeder to the feed pipe is increased with time until the feed of the silicon material is completed. This prevents abrasion of a coating or lining provided on the inner surface of the feeder and also prevents damage of the feeder. In a pulling apparatus operated according to the Czochralski method, after causing granular silicon material to stagnate in the feed pipe, the crucible is lowered or the feed pipe is raised, while the stagnation of the granular silicon material is maintained, so as to form an unmolten layer of the granular silicon material on the molten or solidified surface of the silicon melt. The unmolten layer is then melted, and the granular silicon material is fed onto the unmolten layer through the feed pipe while the stagnation of the granular silicon material in the feed pipe is maintained. Accordingly, silicon material can be recharged without damaging the crucible, so that productivity and manufacturing yield of silicon monocrystals can be improved.
摘要翻译：在根据多牵引方法或CCZ方法操作的拉制装置中，首先将粒状硅材料从进料器供给到进料管，以在进料管中形成粒状硅材料的停滞。将粒状硅材料从进料器进料到进料管被反复开始和停止，以保持颗粒状硅材料的停滞。从供料器到进料管的颗粒状硅材料的进料速率随时间而增加，直到硅材料的进料完成。这防止了设置在进料器内表面上的涂层或衬里的磨损，并且还防止了进料器的损坏。在根据切克劳斯基法（Czochralski）方法操作的拉制装置中，在使粒状硅材料滞留在进料管中之后，坩埚降低或进料管升高，同时保持粒状硅材料的滞留，从而形成在硅熔体的熔融或固化表面上的颗粒状硅材料的未熔融层。然后将未熔融层熔化，并且粒状硅材料通过进料管进料到未熔融层上，同时保持进料管中颗粒状硅材料的停滞。因此，可以对硅材料进行再充电而不损坏坩埚，从而可以提高硅单晶的生产率和制造成品率。

3. 发明授权

US5851286A Crystal pulling apparatus 失效
标题翻译：水晶拉机
公开(公告)号：US5851286A
公开(公告)日：1998-12-22
申请号：US763888
申请日：1996-12-11
申请人： Atsushi Ozaki , Masahiko Urano , Isamu Harada , Tomohiro Kakegawa , Hideki Nakano
发明人： Atsushi Ozaki , Masahiko Urano , Isamu Harada , Tomohiro Kakegawa , Hideki Nakano
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译：公开了采用Czochralski法的晶体拉制装置。在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。

4. 发明授权

US6159283A Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal 有权
标题翻译：用于测量晶种颈部机械强度的装置和方法以及用于生产硅单晶的方法
公开(公告)号：US6159283A
公开(公告)日：2000-12-12
申请号：US267214
申请日：1999-03-12
申请人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
发明人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
IPC分类号： G01N3/02 , G01N3/08 , C30B15/24
CPC分类号： G01N3/08 , G01N2203/0286 , Y10S117/911 , Y10T117/1068
摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.
摘要翻译：用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。在提供良好的生产率和安全性平衡的条件下生长单晶锭。

5. 发明授权

US4035060A Electro-optic device 失效
标题翻译：电光装置
公开(公告)号：US4035060A
公开(公告)日：1977-07-12
申请号：US631706
申请日：1975-11-13
申请人： Ichiro Tsunoda , Satoshi Takeuchi , Yoichiro Hirao , Takeo Suzuki , Yoshihiro Nishiue , Katsumasa Tadokoro , Toshimasa Fukagawa , Isamu Harada , Akira Misawa , Kazuo Watanabe
发明人： Ichiro Tsunoda , Satoshi Takeuchi , Yoichiro Hirao , Takeo Suzuki , Yoshihiro Nishiue , Katsumasa Tadokoro , Toshimasa Fukagawa , Isamu Harada , Akira Misawa , Kazuo Watanabe
IPC分类号： G02F1/133 , G04G9/06 , G02F1/13
CPC分类号： G04G9/06 , G02F1/133
摘要： An electro-optic device comprises a plurality of first electrodes provided on a top substrate and a second electrode provided on a bottom substrate, the first electrodes confronting the second electrode through electro-optical matter which will show electro-optical phenomena by the application of electric field, the first and second electrodes being connected through external impedance elements such as resistors or capacitors to a variable voltage source. In this electro-optic device, the electric field applied between the first and second electrodes are partially changed by various means, for instance, by making the areas of the first electrodes different, or by varying the values of the external impedance elements such as resistors or capacitors, as a result of which the electro-optical matter shows various electro-optical phenomena.
摘要翻译：电光装置包括设置在顶部基板上的多个第一电极和设置在底部基板上的第二电极，第一电极通过电光物质面对第二电极，该电光物质将通过施加电气而显示电光现象第一和第二电极通过诸如电阻器或电容器的外部阻抗元件连接到可变电压源。在这种电光装置中，施加在第一和第二电极之间的电场通过各种方式被部分地改变，例如通过使第一电极的面积不同，或者通过改变诸如电阻器的外部阻抗元件的值或电容器，其结果是电光物质显示出各种电光学现象。

6. 发明授权

US3944330A Electro-optic device 失效
标题翻译：电光装置
公开(公告)号：US3944330A
公开(公告)日：1976-03-16
申请号：US399481
申请日：1973-09-21
申请人： Ichiro Tsunoda , Satoshi Takeuchi , Yoichiro Hirao , Takeo Suzuki , Yoshihiro Nishiue , Katsumasa Tadokoro , Toshimasa Fukagawa , Isamu Harada , Akira Misawa , Kazuo Watanabe
发明人： Ichiro Tsunoda , Satoshi Takeuchi , Yoichiro Hirao , Takeo Suzuki , Yoshihiro Nishiue , Katsumasa Tadokoro , Toshimasa Fukagawa , Isamu Harada , Akira Misawa , Kazuo Watanabe
IPC分类号： G01R13/40 , G02F1/133 , H04M15/30 , G02F1/13
CPC分类号： H04M15/30 , G01R13/40 , G02F1/133
摘要： An electro-optic device comprises a plurality of first electrodes provided on a top substrate and a second electrode provided on a bottom substrate, the first electrodes confronting the second electrode through electro-optical matter which will show electro-optical phenomena by the application of electric field, the first and second electrodes being connected through electrical elements such as resistors or capacitors to a variable voltage source. In this electro-optic device, the electric field applied between the first and second electrodes are partially changed by various means, for instance, by making the areas of the first electrodes different, or by varying the values of the electrical elements such as resistors or capacitors, as a result of which the electro-optical matter shows various electro-optical phenomena.
摘要翻译：电光装置包括设置在顶部基板上的多个第一电极和设置在底部基板上的第二电极，第一电极通过电光物质面对第二电极，该电光物质将通过施加电气而显示电光现象第一和第二电极通过电气元件例如电阻器或电容器连接到可变电压源。在该电光装置中，施加在第一和第二电极之间的电场通过各种方式被部分地改变，例如通过使第一电极的面积不同，或者通过改变电气元件的值例如电阻器或电容器，其结果是电光物质表现出各种电光学现象。

7. 发明授权

US5868835A Apparatus for recharging of silicon granules in a czochralski single crystal growing operation 失效
标题翻译：用于在切克萨斯基单晶生长操作中对硅颗粒再充电的装置
公开(公告)号：US5868835A
公开(公告)日：1999-02-09
申请号：US911352
申请日：1997-08-07
申请人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
发明人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
IPC分类号： C30B15/20 , C30B15/02 , C30B29/06 , C30B35/00
CPC分类号： C30B15/02 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.
摘要翻译：包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量供应管道中的滞留或备用供应。

8. 发明授权

US5733368A Method of manufacturing silicon monocrystal using continuous czochralski method 失效
标题翻译：使用连续切克劳斯基法制造单晶硅的方法
公开(公告)号：US5733368A
公开(公告)日：1998-03-31
申请号：US804123
申请日：1997-02-20
申请人： Naoki Nagai , Isamu Harada , Michiaki Oda
发明人： Naoki Nagai , Isamu Harada , Michiaki Oda
IPC分类号： C30B15/02 , C30B15/22 , C30B29/06 , H01L21/208
CPC分类号： C30B15/22 , C30B15/02 , Y10T117/1068
摘要： In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.
摘要翻译：在使用连续切克劳斯基法制造硅单晶的方法中，将硅材料供给到坩埚中，从坩埚中的硅熔体中拉出硅单晶。硅材料的供给被悬浮直到硅熔体的温度分布在直体形成过程开始后变得稳定，并且当硅熔体的温度分布变得稳定时，硅材料的供应开始。硅材料的进料速率逐渐增加，直到开始供应硅材料之后，进料速率等于硅熔体的固化速率。该方法在制造时防止硅单晶成为多晶。

9. 发明授权

US5690733A Method for recharging of silicon granules in a Czochralski single crystal growing operation 失效
标题翻译：在Czochralski单晶生长操作中对硅颗粒再充电的方法
公开(公告)号：US5690733A
公开(公告)日：1997-11-25
申请号：US552494
申请日：1995-11-09
申请人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
发明人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
IPC分类号： C30B15/20 , C30B15/02 , C30B29/06 , C30B35/00 , C30B15/04
CPC分类号： C30B15/02 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.
摘要翻译：包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量供应管道中的滞留或备用供应。

10. 发明授权

US5089239A Wire vibration prevention mechanism for a single crystal pulling apparatus 失效
标题翻译：单晶拉丝装置的电线振动预防机制
公开(公告)号：US5089239A
公开(公告)日：1992-02-18
申请号：US509846
申请日：1990-04-17
申请人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
发明人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
IPC分类号： C30B15/20 , C30B15/30
CPC分类号： C30B15/30 , C30B15/20 , Y10T117/1072
摘要： A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

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