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    • 4. 发明授权
    • Device simulation method, device simulation system and device simulation program
    • 设备仿真方法,设备仿真系统和设备仿真程序
    • US06954723B2
    • 2005-10-11
    • US09956126
    • 2001-09-20
    • Hiroshi WatanabeKazuya Matsuzawa
    • Hiroshi WatanabeKazuya Matsuzawa
    • G06F17/50H01L29/00G06F17/10
    • G06F17/5018
    • There is disclosed a method comprising: calculating a band gap narrowing of a semiconductor and an ionization rate of an impurity in an equilibrium state; calculating a movable electric charge density contributing to transportation of an electric charge inside the semiconductor by solving a Poisson equation and a movable electric charge continuous equation based on the calculated ionization rate in the equilibrium state; calculating said band gap narrowing and said ionization rate in a non-equilibrium state, taking presence of a potential into consideration, based on the calculated movable electric charge density; and repeating the calculation of the movable electric charge density by solving the Poisson equation and the movable electric charge continuous equation based on the ionization rate and the band gap narrowing in said non-equilibrium state, and the calculation of said band gap narrowing and said ionization rate based on the calculation result, until the ionization rate and the band gap narrowing in said non-equilibrium state converge.
    • 公开了一种方法,包括:计算半导体的带隙变窄和杂质在平衡状态下的电离速率; 通过在平衡状态下求解基于所计算的电离率的泊松方程和可移动电荷连续方程来计算有助于半导体内的电荷输送的可移动电荷密度; 基于所计算的可移动电荷密度,计算所述带隙变窄和所述电离率处于非平衡状态,考虑到考虑到电位; 并且通过基于所述非平衡状态下的电离速率和带隙变窄来求解泊松方程和可移动电荷连续方程,并且计算所述带隙变窄和所述电离的重复计算可移动电荷密度 基于计算结果的速率,直到所述非平衡状态的电离速率和带隙变窄收敛。