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1. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

2. 发明授权

US06286524B1 Wafer drying apparatus and method with residual particle removability enhancement 失效
标题翻译：晶圆干燥装置和残留颗粒去除性提高方法
公开(公告)号：US06286524B1
公开(公告)日：2001-09-11
申请号：US09257384
申请日：1999-02-25
申请人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
发明人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
IPC分类号： B08B704
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.
摘要翻译：一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

3. 发明授权

US6059887A Process for cleaning the interior of semiconductor substrate 失效
标题翻译：清洗半导体衬底内部的工艺
公开(公告)号：US6059887A
公开(公告)日：2000-05-09
申请号：US54511
申请日：1998-04-03
申请人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
发明人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
IPC分类号： H01L21/304 , H01L21/322 , C03C23/00
CPC分类号： H01L21/3221
摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.
摘要翻译：提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

4. 发明授权

US07267742B2 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07267742B2
公开(公告)日：2007-09-11
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

5. 发明授权

US07055535B2 Holding unit, processing apparatus and holding method of substrates 失效
标题翻译：保持单元，加工设备和基板的保持方法
公开(公告)号：US07055535B2
公开(公告)日：2006-06-06
申请号：US10629678
申请日：2003-07-30
申请人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B3/08 , B25B11/00 , H01L21/306
CPC分类号： H01L21/6838 , Y10S134/902 , Y10T279/11
摘要： A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.
摘要翻译：保持单元保持基板以使得能够处理基板的表面。该单元具有与基板的表面的周边部分接触并吸附基板的真空吸附构件。处理装置稳定地保持晶片，并且允许晶片的边缘，斜面部分和/或背面被处理。

6. 发明授权

US06436723B1 Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device 失效
标题翻译：蚀刻方法和蚀刻装置，半导体装置的制造方法以及半导体装置
公开(公告)号：US06436723B1
公开(公告)日：2002-08-20
申请号：US09408177
申请日：1999-09-29
申请人： Hiroshi Tomita , Soichi Nadahara
发明人： Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L2100
CPC分类号： H01L21/32134 , H01L21/67075 , H01L28/65
摘要： In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.
摘要翻译：在蚀刻方法中，将含有氧化还原电位为2V以上的氧化剂的臭氧水供给到诸如SrRuO膜等的金属化合物膜上，并且通过涉及氧的氧化还原反应蚀刻金属化合物膜。通过物理去除方法通常去除的金属化合物膜可以通过湿蚀刻容易地除去。因此，容易制造含有SrRuO膜的电容器等。

7. 发明申请

US20100210110A1 ETCHING APPARATUS, A METHOD OF CONTROLLING AN ETCHING SOLUTION, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：蚀刻装置，控制蚀刻溶液的方法和制造半导体器件的方法
公开(公告)号：US20100210110A1
公开(公告)日：2010-08-19
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

8. 发明授权

US06679950B2 Cleaning method and cleaner 失效
标题翻译：清洁方法和清洁剂
公开(公告)号：US06679950B2
公开(公告)日：2004-01-20
申请号：US09892742
申请日：2001-06-28
申请人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
发明人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
IPC分类号： B08B300
CPC分类号： H01L21/67046 , B01F3/04099 , B01F3/0446 , B01F5/0476 , B01F2003/0439 , B01F2003/04886 , B01F2201/01 , B08B1/00 , B08B1/04 , B08B3/02 , Y10S134/902
摘要： A substrate cleaning method of the present invention enables effective cleaning of a wafer having a recess therein without causing any increase in cleaning costs. Ozone gas and ammonia water are supplied to an area right above a wafer 7 having a recess therein, and a gas-dissolving liquid is produced by dissolving the ozone gas in the ammonia water. The gas-dissolving liquid is used to carry out contact and non-contact types of physical cleaning on the wafer.
摘要翻译：本发明的基板清洗方法能够有效地清洗其中具有凹槽的晶片，而不会导致清洁成本的任何增加。将臭氧气体和氨水供给到其中具有凹部的晶片7的正上方的区域，并且通过将臭氧气体溶解在氨水中来制造气体溶解液。气溶液用于在晶片上进行接触和非接触式的物理清洁。

9. 发明授权

US06645876B2 Etching for manufacture of semiconductor devices 有权
公开(公告)号：US06645876B2
公开(公告)日：2003-11-11
申请号：US10014609
申请日：2001-12-14
申请人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
发明人： Mami Saito , Hiroshi Tomita , Kunihiro Miyazaki , Soichi Nadahara
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/3081 , H01L21/31111 , H01L21/67086
摘要： A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

10. 发明授权

US06639317B2 Semiconductor device in trench 失效
标题翻译：沟槽中的半导体器件
公开(公告)号：US06639317B2
公开(公告)日：2003-10-28
申请号：US10188871
申请日：2002-07-05
申请人： Hiroshi Tomita , Soichi Nadahara
发明人： Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L23528
CPC分类号： H01L21/32134 , H01L21/67075 , H01L28/65
摘要： In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.
摘要翻译：在蚀刻方法中，将含有氧化还原电位为2V以上的氧化剂的臭氧水供给到诸如SrRuO膜等的金属化合物膜上，并且通过涉及氧的氧化还原反应蚀刻金属化合物膜。通过物理去除方法通常去除的金属化合物膜可以通过湿蚀刻容易地除去。因此，容易制造含有SrRuO膜的电容器等。

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