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1. 发明申请

US20100210110A1 ETCHING APPARATUS, A METHOD OF CONTROLLING AN ETCHING SOLUTION, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：蚀刻装置，控制蚀刻溶液的方法和制造半导体器件的方法
公开(公告)号：US20100210110A1
公开(公告)日：2010-08-19
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

2. 发明授权

US07776756B1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07776756B1
公开(公告)日：2010-08-17
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

3. 发明申请

US20050230045A1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US20050230045A1
公开(公告)日：2005-10-20
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/08 , B44C1/22 , C23F1/00 , C23F1/16 , H01L21/00 , H01L21/306 , H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

4. 发明授权

US07267742B2 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07267742B2
公开(公告)日：2007-09-11
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

5. 发明授权

US06492271B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06492271B1
公开(公告)日：2002-12-10
申请号：US09609711
申请日：2000-06-30
申请人： Yoshihiro Uozumi , Hisashi Okuchi , Soichi Nadahara , Yoshihiro Ogawa , Hiroshi Tomita
发明人： Yoshihiro Uozumi , Hisashi Okuchi , Soichi Nadahara , Yoshihiro Ogawa , Hiroshi Tomita
IPC分类号： H01L21302
CPC分类号： H01L21/76865 , H01L21/32134 , H01L21/76831 , H01L21/76843 , H01L21/76897
摘要： A titanium nitride film is selectively etched relative to a tungsten film by using as an etchant a solution containing hydrochloric acid and a hydrogen peroxide solution, the molar ratio of the hydrogen peroxide in the hydrogen peroxide solution to hydrogen chloride in the hydrochloric acid being 1/100 or less.
摘要翻译：通过使用含有盐酸和过氧化氢溶液的溶液作为蚀刻剂，相对于钨膜选择性地蚀刻氮化钛膜，过氧化氢中的过氧化氢与盐酸中的氯化氢的摩尔比为1 / 100以下。

6. 发明授权

US07097784B2 Etching method and apparatus for semiconductor wafers 失效
标题翻译：半导体晶片的蚀刻方法和装置
公开(公告)号：US07097784B2
公开(公告)日：2006-08-29
申请号：US10742992
申请日：2003-12-23
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
摘要翻译：一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

7. 发明申请

US20060255014A1 Etching method and apparatus for semiconductor wafers 审中-公开
公开(公告)号：US20060255014A1
公开(公告)日：2006-11-16
申请号：US11490054
申请日：2006-07-21
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

8. 发明申请

US20090317980A1 FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
标题翻译：过滤器，基板处理装置和基板处理方法
公开(公告)号：US20090317980A1
公开(公告)日：2009-12-24
申请号：US12548814
申请日：2009-08-27
申请人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
发明人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
IPC分类号： H01L21/306
CPC分类号： H01L21/67086 , H01L21/30604 , H01L21/31111
摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.
摘要翻译：一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

9. 发明申请

US20050211378A1 Filter, substrate treatment apparatus and substrate treatment method 审中-公开
标题翻译：过滤器，基板处理装置及基板处理方法
公开(公告)号：US20050211378A1
公开(公告)日：2005-09-29
申请号：US11076231
申请日：2005-03-10
申请人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
发明人： Hiroyasu Iimori , Hisashi Okuchi , Hiroshi Tomita , Yoshihiro Ogawa
IPC分类号： H01L21/306 , C23F1/00 , H01L21/00 , H01L21/311
CPC分类号： H01L21/67086 , H01L21/30604 , H01L21/31111
摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.
摘要翻译：一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括：化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。

10. 发明授权

US06286524B1 Wafer drying apparatus and method with residual particle removability enhancement 失效
标题翻译：晶圆干燥装置和残留颗粒去除性提高方法
公开(公告)号：US06286524B1
公开(公告)日：2001-09-11
申请号：US09257384
申请日：1999-02-25
申请人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
发明人： Hisashi Okuchi , Hiroshi Tomita , Soichi Nadahara , Katsuya Okumura
IPC分类号： B08B704
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.
摘要翻译：一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

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