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1. 发明申请

US20080134976A1 Apparatus for Forming Thin Film 审中-公开
标题翻译：薄膜成型装置
公开(公告)号：US20080134976A1
公开(公告)日：2008-06-12
申请号：US12030054
申请日：2008-02-12
申请人： Hiroshi Shinriki , Kenji Matsumoto , Toru Tatsumi
发明人： Hiroshi Shinriki , Kenji Matsumoto , Toru Tatsumi
IPC分类号： C23C16/54
CPC分类号： H01L21/02271 , C23C16/452 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C30B25/14 , H01L21/02197 , H01L21/31691
摘要： A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head.
摘要翻译：具有多个用于将均匀密度的有机金属气体供给到基板表面的喷头，并且在MOCVD的反应炉中设置多个用于以均匀密度供给氧化气体的喷射孔系统。在淋浴头的基板侧表面附近设置有用于将内部加热到高于有机金属气体的热分解点但低于成膜温度的温度的加热器。

2. 发明授权

US07354622B2 Method for forming thin film and apparatus for forming thin film 失效
标题翻译：薄膜形成方法及薄膜形成装置
公开(公告)号：US07354622B2
公开(公告)日：2008-04-08
申请号：US10311880
申请日：2001-06-25
申请人： Hiroshi Shinriki , Kenji Matsumoto , Toru Tatsumi
发明人： Hiroshi Shinriki , Kenji Matsumoto , Toru Tatsumi
IPC分类号： C23C16/00
CPC分类号： H01L21/31691 , C23C16/452 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C30B25/14
摘要： A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate side surface of the shower head.
摘要翻译：具有多个用于将均匀密度的有机金属气体供给到基板表面的喷头，并且在MOCVD的反应炉中设置多个用于以均匀密度供给氧化气体的喷射孔系统。在淋浴头的基板侧表面附近设置用于将内部加热到高于有机金属气体的热分解点但低于成膜温度的温度的加热器。

3. 发明授权

US08524617B2 Methods for manufacturing dielectric films 有权
标题翻译：电介质膜的制造方法
公开(公告)号：US08524617B2
公开(公告)日：2013-09-03
申请号：US13147990
申请日：2010-02-26
申请人： Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
发明人： Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02356 , C23C14/08 , C23C14/083 , C23C14/352 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02161 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/02266 , H01L21/28088 , H01L21/28176 , H01L21/28194 , H01L21/28282 , H01L21/316 , H01L28/40 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659 , H01L29/7833 , H01L29/7881 , H01L29/792 , H01L29/94
摘要： A method for manufacturing a dielectric film having a high dielectric constant is provided.The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0
摘要翻译：提供了具有高介电常数的电介质膜的制造方法。该方法是在衬底上形成包含含有O和元素A和B的金属氧化物的电介质膜的方法，其中元素A包括Hf或Hf和Zr的混合物，元素B包含Al或Si，包括以下步骤：形成具有元素A和元素B之间的摩尔比，B /（A + B）为0.02（B /（A + B））≤0.095的非晶结构的金属氧化物，摩尔比在元素A和O之间，O / A为1.0 <（O / A）<2.0; 并在700℃以上退火具有非晶结构的金属氧化物，形成含有立方晶体含量为80％以上的结晶相的金属氧化物。

4. 发明申请

US20100221885A1 METHOD OF MANUFACTURING DIELECTRIC FILM 有权
标题翻译：制造电介质膜的方法
公开(公告)号：US20100221885A1
公开(公告)日：2010-09-02
申请号：US12761924
申请日：2010-04-16
申请人： Naomu Kitano , Takashi Nakagawa , Toru Tatsumi
发明人： Naomu Kitano , Takashi Nakagawa , Toru Tatsumi
IPC分类号： H01L21/336 , H01L21/28 , G06F19/00 , C23C14/35 , C01B21/20
CPC分类号： H01L29/42324 , C23C14/0676 , C23C14/225 , C23C14/3464 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/02266 , H01L21/28273 , H01L21/28282 , H01L21/31604 , H01L21/318 , H01L29/4234 , H01L29/513 , H01L29/7881
摘要： The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0
摘要翻译：本发明提供具有高介电常数的电介质膜的制造方法。本发明的一个实施方式是在基板上制造包含含有由Hf或Hf和Zr的混合物构成的元素A的金属氮氧化物的电介质膜，由Al构成的元素B和N和O. 制造方法包括：形成金属氮氧化物的步骤，其中元素A，元素B和元素B的摩尔分数表示为B /（A + B + N）的范围为0.015＆amp; NlE;（B / A + B + N））＆nlE; 0.095和N /（A + B + N）的范围为0.045＆nlE;（N /（A + B + N）），元素A和O的摩尔分数O / 范围为1.0 <（O / A）<2.0，具有非晶结构; 以及在具有非结晶结构的金属氮氧化物上在700℃以上进行退火处理以形成具有80％以上立方晶结合比例的结晶相的金属氧氮化物的工序。

5. 发明申请

US20070132009A1 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070132009A1
公开(公告)日：2007-06-14
申请号：US10575631
申请日：2004-09-29
申请人： Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
发明人： Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
IPC分类号： H01L29/788
CPC分类号： H01L29/785 , H01L21/845 , H01L27/092 , H01L27/1211 , H01L29/41791 , H01L29/42392 , H01L29/665 , H01L29/66628 , H01L29/66795 , H01L29/7854 , H01L2029/7858 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.
摘要翻译：一种半导体器件，包括：MIS型场效应晶体管，其包括从衬底平面突出的半导体凸起部分，从半导体凸起部分顶部延伸到半导体凸起部分的相对侧面上的栅电极，栅极绝缘膜存在于栅极电极和半导体凸起部分之间，以及设置在半导体凸起部分中的源极和漏极区域; 设置在包括晶体管的基板上的层间绝缘膜; 以及通过用导体填充形成在所述层间绝缘膜中的沟槽而形成的掩埋导体互连，其中所述掩埋导体布线连接所述半导体凸起部分的所述源极和漏极区域中的一个以及所述层间绝缘膜下方的另一个导电部分。

6. 发明授权

US06790741B1 Process for producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US06790741B1
公开(公告)日：2004-09-14
申请号：US09694919
申请日：2000-10-24
申请人： Toru Tatsumi
发明人： Toru Tatsumi
IPC分类号： H01L218242
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02304 , H01L21/02356 , H01L21/31691 , H01L28/56
摘要： In forming a metal oxide dielectric film of perovskite type for capacitor, an array of lower electrodes and a crystallization-assisting conductive film are simultaneously formed. The crystallization-assisting conductive film is formed outside the lower electrode array, at a distance of about 10 &mgr;m or less from the outermost lower electrodes, in a width of 20 &mgr;m or more. Then, a metal oxide dielectric film is formed thereon. Since the crystallization-assisting conductive film assists the crystallization of metal oxide dielectric film, capacitor elements which are superior in properties and reliability even when the capacitor elements are produced in a fine structure is obtained.
摘要翻译：在形成用于电容器的钙钛矿型金属氧化物电介质膜时，同时形成下电极阵列和结晶化辅助导电膜。结晶化导电膜形成在下电极阵列的外侧，距离最外的下电极约10微米或更小，宽度为20微米或更大。然后，在其上形成金属氧化物电介质膜。由于结晶化导电膜有助于金属氧化物电介质膜的结晶化，因此获得即使电容器元件以精细的结构制造也具有优异的性能和可靠性的电容器元件。

7. 发明授权

US06091081A Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film 失效
标题翻译：包含无定形氟化碳的绝缘膜，包括这种绝缘膜的半导体器件
公开(公告)号：US06091081A
公开(公告)日：2000-07-18
申请号：US982585
申请日：1997-12-02
申请人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
发明人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/312 , H01L21/314 , H01L21/318 , H01L21/768 , H01L23/522 , H01L23/532 , H01L31/0312
CPC分类号： H01L21/76834 , H01L21/312 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
摘要翻译：公开了在布线层和使用这种膜的半导体器件之间使用的低介电常数层间绝缘膜的结构和制造工艺。可以在实际工艺中承受的绝缘膜包括无定形氟化碳膜。在无定形氟化碳膜的两侧设置有类金刚石碳膜和硅过剩层，以插入布线层之间，从而显着提高与布线的接合和与其接触的另一绝缘膜。此外，将硅基绝缘膜设置并平坦化在含有埋设有布线层的无定形氟化碳膜的多层膜上，并且用作用于各向异性蚀刻类金刚石碳膜和无定形氟化碳膜的硬掩模，氧等离子体形成通孔。

8. 发明授权

US06075253A Monocrystalline semiconductor photodetector 失效
标题翻译：单晶半导体光电探测器
公开(公告)号：US06075253A
公开(公告)日：2000-06-13
申请号：US60256
申请日：1998-04-15
申请人： Mitsuhiro Sugiyama , Toru Tatsumi
发明人： Mitsuhiro Sugiyama , Toru Tatsumi
IPC分类号： H01L31/10 , H01L31/028 , H01L31/0352 , H01L29/06
CPC分类号： H01L31/028 , H01L31/035281 , Y02E10/547
摘要： A semiconductor photodetector having a planar structure, including a first silicon layer having a first conductivity and formed with a recess, a silicon dioxide film covering a sidewall of the recess therewith, a germanium monocrystal layer formed in the recess, a first germanium layer having a first conductivity and sandwiched between the germanium monocrystal layer and the first silicon layer in the recess, a second germanium layer having a second conductivity and formed on the germanium monocrystal layer, and a second silicon layer having a second conductivity and formed on the second germanium layer. The first and second germanium layers prevent a depletion layer, which are generated in the germanium monocrystal layer when a voltage is applied to the semiconductor photodetector, from reaching the first and second silicon layers, respectively. In accordance with the semiconductor photodetector, a depletion layer generated in the germanium monocrystal layer is prevented from reaching the first and second silicon layers, and hence, electric charges generated by introduction of light into the germanium monocrystal layer would not be recombined to each other through a recombination core. As a result, it is possible to avoid reduction in a photoelectric current or a quantum efficiency.
摘要翻译：一种具有平面结构的半导体光电检测器，包括具有第一导电性的第一硅层和形成有凹部的半导体光电检测器，覆盖其凹部的侧壁的二氧化硅膜，形成在凹部中的锗单晶层，具有第一锗层的第一锗层，第一导电性并夹在凹槽内的锗单晶层和第一硅层之间，形成在锗单晶层上的具有第二导电性的第二锗层和形成在第二锗层上的具有第二导电性的第二硅层。第一和第二锗层防止当向半导体光电检测器施加电压时在锗单晶层中产生的耗尽层分别达到第一和第二硅层。根据半导体光电探测器，防止在锗单晶层中产生的耗尽层到达第一和第二硅层，因此通过将锗引入锗单晶层而产生的电荷将不会通过重组核心。结果，可以避免光电流或量子效率的降低。

9. 发明授权

US5866920A Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US5866920A
公开(公告)日：1999-02-02
申请号：US813338
申请日：1997-03-07
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： G03F7/075 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/3127
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

10. 发明授权

US5441012A Thin film deposition method for wafer 失效
标题翻译：晶圆薄膜沉积方法
公开(公告)号：US5441012A
公开(公告)日：1995-08-15
申请号：US186502
申请日：1994-01-26
申请人： Ken-ichi Aketagawa , Junro Sakai , Toru Tatsumi
发明人： Ken-ichi Aketagawa , Junro Sakai , Toru Tatsumi
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , C30B25/14
CPC分类号： C30B29/06 , C30B25/18 , H01L21/02381 , H01L21/02395 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A thin film deposition method consists of placing a wafer or substrate whose surface contains at least two kinds of materials inside a vacuum chamber or vessel, supplying a reactant gas into the vacuum chamber or vessel, the reactant gas containing molecules having a low sticking coefficient relative to at least one of the at least two kinds of materials, and allowing an epitaxial growth to occur on the other kinds of materials contained in the wafer or substrate.The method further includes setting the pressure inside the vacuum chamber or vessel filled with the reactant gas equal to a pressure range in which the mean free path (d) of the reactant gas molecules is longer than the shortest distance (L) between the wafer or substrate placed inside the vacuum chamber or vessel and the vacuum side-exposed wall of the vacuum chamber or vessel, i.e., d>L.The method further includes slopping the introduction of the reactant gas into the vacuum chamber or vessel until the total amount of the reactant gas introduced into the vacuum chamber or vessel reaches its level at which a thin film can be created onto the surface containing the kind of material having the low sticking coefficient relative to the reactant gas, or more specifically, stopping the introduction of the reactant gas until the total amount of the reactant gas molecules striking against the wafer or substrate reaches its level at which a thin film can be created onto the surface containing the kind of material having the low sticking coefficient.
摘要翻译：薄膜沉积方法包括将表面含有至少两种材料的晶片或基板放置在真空室或容器内，将反应气体供应到真空室或容器中，含有低粘滞系数的分子的反应气体相对涉及至少两种材料中的至少一种，并且允许在包含在晶片或基板中的其它种类的材料上发生外延生长。该方法还包括将填充有反应气体的真空室或容器内的压力设定为等于反应气体分子的平均自由程（d）长于晶片或放置在真空室或容器内以及真空室或容器的真空侧面暴露壁内，即d> L。该方法还包括将反应气体引入真空室或容器中，直到引入真空室或容器中的反应气体的总量达到其上可以产生薄膜的水平，该薄膜可以形成在含有或者更具体地说，停止反应气体的引入，直到反应物气体分子撞击晶片或基板的总量达到其上可以形成薄膜的水平，该表面含有具有低粘附系数的那种材料。

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