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    • 1. 发明授权
    • Memory device with function to perform operation, and method of performing operation and storage
    • 具有执行功能的存储器件,以及执行操作和存储的方法
    • US07038930B2
    • 2006-05-02
    • US10844069
    • 2004-05-12
    • Hiroshi NozawaHiroaki KatoYoshikazu Fujimori
    • Hiroshi NozawaHiroaki KatoYoshikazu Fujimori
    • G11C11/22
    • G11C11/22
    • To provide a memory device with a function to perform an operation and a method of performing an operation and storage which can save space and cost and which can start, immediately after the power source is recovered, the processing which was being performed at the time of power failure. A memory cell MC can store two independent data sets; DRAM data (volatile data) and FeRAM data (non-volatile data). Thus, the number of memory cells can be reduced to a half. Also, the DRAM data to be used in the next operation of the two data sets which have been read out for the previous operation are temporarily held in a hold circuit 21 of an operation unit OU and then written back into the memory cell MC in a non-volatile manner as new FeRAM data for preparation of the next operation. Thus, even when the power source is shut down by an unexpected trouble, the data necessary for the next operation are not lost.
    • 为了提供具有执行操作的功能的存储器件和执行操作和存储的方法,其可以节省空间和成本,并且可以在电源恢复之后立即开始执行正在执行的处理 电源(检测)失败。 存储单元MC可以存储两个独立的数据集; DRAM数据(易失性数据)和FeRAM数据(非易失性数据)。 因此,存储器单元的数量可以减少到一半。 此外,将用于在先前操作中读出的两个数据组的下次操作中使用的DRAM数据被暂时保存在操作单元OU的保持电路21中,然后被写回到存储单元MC中 作为新的FeRAM数据的非易失性方式,用于准备下一个操作。 因此,即使当电源被意外的故障关闭时,下一个操作所需的数据也不会丢失。
    • 2. 发明授权
    • Coding-decoding device and method for conversion of binary sequences
    • 用于转换二进制序列的编码解码装置和方法
    • US07039847B2
    • 2006-05-02
    • US10238984
    • 2002-09-09
    • Hiroshi NozawaShinzo KoyamaMasao TakayamaYoshikazu Fujimori
    • Hiroshi NozawaShinzo KoyamaMasao TakayamaYoshikazu Fujimori
    • G11C29/00
    • G11C7/1006
    • A coding-decoding device and a coding-decoding method that take less time for coding and decoding are provided while using less number of logic gates. A memory device 15 substantially stores b pieces of conversion logic equations produced with a conversion logic equation producing device 13. An operation device 17 has a programmable hardware logic circuit to constitute logics sequentially according to plural execution unit logic equations obtained by dividing b pieces of conversion logic equations stored in the memory device 15 into execution units for respective execution unit logic equations using the hardware logic circuit. Besides, the operation device 17 sequentially divides and calculates the second sentences from the first sentences according to the constituted logics. An output device 19 collects and outputs the second sentences calculated with the operation device 17.
    • 在使用较少数量的逻辑门的同时,提供了编码解码装置和编码解码方法,其中编码解码时间较短。 存储器装置15基本上存储由转换逻辑方程产生装置13产生的b个转换逻辑方程式。 操作装置17具有可编程硬件逻辑电路,以根据通过使用硬件逻辑电路将存储在存储器件15中的b个转换逻辑方程分成执行单元逻辑方程而获得的多个执行单元逻辑方程来顺序地构成逻辑 。 此外,操作装置17根据构成的逻辑顺序地分割和计算来自第一句子的第二句子。 输出装置19收集并输出用操作装置17计算的第二句子。
    • 5. 发明授权
    • Enciphering and deciphering apparatus, and enciphering and deciphering method
    • 加密和解密装置,以及加密和解密方法
    • US07317794B2
    • 2008-01-08
    • US10378982
    • 2003-03-03
    • Hiroshi NozawaMasao TakayamaYoshikazu Fujimori
    • Hiroshi NozawaMasao TakayamaYoshikazu Fujimori
    • H04L9/28
    • H04L9/302H04L2209/12
    • The present invention aims at providing a novel enciphering and deciphering apparatus and an enciphering and deciphering method related thereto, which are respectively capable of contracting the time required for enciphering and deciphering processes and decreasing the number of logic gates provided in the apparatus. Essentially based on an equation Xki=1+Σ((J=1, i)iCj·Xk−1j) and also based on an initial value consisting of a group of power raising values Xk0j corresponding to j=1 through m in relation to k−1=k0, an arithmetic operating unit 21 seeks a second expression Yk1 by serially computing a group of power raising values Xki corresponding to i=1 through m in relation to one unit of k shown in the above equation in a range from k=k0+1 up to k=k1 by applying binomial coefficients stored in a coefficient memory unit 17. Accordingly, once those binomial coefficients corresponding to predetermined integers n and m are stored in memory, thenceforth, it is possible to contract the time required for executing an enciphering or deciphering process related to identical integers n and m.
    • 本发明旨在提供一种新颖的加密和解密装置及其相关的加密和解密方法,它们能够缩短加密和解密处理所需的时间并减少设备中提供的逻辑门数。 基本上基于方程式X 1 i S iΣΣ((J = 1,i)< i< 并且还基于由一组增力值组成的初始值X< k>< j>< j> 相对于k-1 = k0对应于j = 1到m的算术运算单元21通过串联计算一组功率提升值X 存储在系数存储单元17中的系数。 因此,一旦对应于预定的整数n和m的二项式系数被存储在存储器中,则可以缩小执行与相同的整数n和m相关的加密或解密处理所需的时间。
    • 7. 发明授权
    • Method of making high density dielectric isolated gate MOS transistor
    • 制造高密度介质隔离栅MOS晶体管的方法
    • US4610078A
    • 1986-09-09
    • US684750
    • 1984-12-21
    • Naohiro MatsukawaHiroshi Nozawa
    • Naohiro MatsukawaHiroshi Nozawa
    • H01L29/78H01L21/28H01L21/336H01L21/308H01L21/265
    • H01L29/66575H01L21/28Y10S148/082
    • There is disclosed a method of manufacturing a semiconductor device comprising a step of forming an isolation film having a patterned hole on a major surface of a semiconductor substrate of a P conductivity type, the wall of the isolation film defining the patterned hole having a large step, a step of forming a polysilicon layer on the major surface of the structure, a step of forming a first interlaid SiO.sub.2 layer on the polysilicon layer, a step of patterning the SiO.sub.2 layer and polysilicon layer using reactive ion etching process, thereby forming on the region of the substrate a gate electrode and a first SiO.sub.2 film superposed thereon, the continuous side wall of the gate electrode and first SiO.sub.2 film having a large step, a step of implanting an impurity ion into the substrate using the first SiO.sub.2 film as a mask, thereby forming an impurity diffused region of an N conductivity type in the substrate, a step of forming a second interlaid SiO.sub.2 layer on the major surface of the structure, and a step of applying reactive ion etching to the second SiO.sub.2 layer, thereby forming a contact hole in the second SiO.sub.2 layer leading to the impurity diffused region, while leaving part of the second SiO.sub.2 layer on the side walls of said isolation film, gate electrode and first SiO.sub.2 film.
    • 公开了一种制造半导体器件的方法,包括在P导电型半导体衬底的主表面上形成具有图案化孔的隔离膜的步骤,隔离膜的壁限定具有大步长的图案化孔 在所述结构体的主表面上形成多晶硅层的工序,在所述多晶硅层上形成第一层叠SiO 2层的工序,使用反应离子蚀刻工序对所述SiO 2层和多晶硅层进行构图的工序, 所述基板的区域是栅电极和叠置在其上的第一SiO 2膜,所述栅电极的连续侧壁和具有大台阶的第一SiO 2膜,使用所述第一SiO 2膜作为掩模将杂质离子注入所述基板的步骤 ,从而在衬底中形成N导电类型的杂质扩散区域,在该结构的主表面上形成第二层间SiO 2层的步骤, 以及向第二SiO 2层施加反应离子蚀刻的步骤,从而在导致杂质扩散区域的第二SiO 2层中形成接触孔,同时在该隔离膜的侧壁上留下一部分第二SiO 2层,栅电极 和第一个SiO 2膜。