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1. 发明申请

US20060176142A1 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20060176142A1
公开(公告)日：2006-08-10
申请号：US11328255
申请日：2006-01-10
申请人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
发明人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
IPC分类号： H01L43/08 , H01L43/02 , H01L43/00 , H01L43/10 , H01L43/04 , H01L43/06
CPC分类号： H01L43/12 , G01R33/0206 , H01L27/22
摘要： A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.
摘要翻译：一种小型磁传感器包括三个轴向传感器，每个轴向传感器使用多个巨磁阻元件构成，其中X轴传感器和Y轴传感器布置在基板的嵌入层的平面上，并且巨磁阻元件形成 Z轴传感器形成在通过蚀刻嵌入层形成的突起的斜面上。可以通过高密度等离子体CVD方法或通过等离子体蚀刻和微波蚀刻在衬底上形成细长突起，从而在细长突起的斜面上形成巨磁电阻元件。

2. 发明授权

US07687284B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US07687284B2
公开(公告)日：2010-03-30
申请号：US11328255
申请日：2006-01-10
申请人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
发明人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
IPC分类号： H01L21/00 , G01R33/09
CPC分类号： H01L43/12 , G01R33/0206 , H01L27/22
摘要： A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.
摘要翻译：一种小型磁传感器包括三个轴向传感器，每个轴向传感器使用多个巨磁阻元件构成，其中X轴传感器和Y轴传感器布置在基板的嵌入层的平面上，并且巨磁阻元件形成 Z轴传感器形成在通过蚀刻嵌入层形成的突起的斜面上。可以通过高密度等离子体CVD方法或通过等离子体蚀刻和微波蚀刻在衬底上形成细长突起，从而在细长突起的斜面上形成巨磁电阻元件。

3. 发明授权

US09054028B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US09054028B2
公开(公告)日：2015-06-09
申请号：US13459644
申请日：2012-04-30
申请人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： G01R33/09 , H01L21/00 , H01L27/22 , B82Y25/00 , H01L43/12
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , H01L43/12 , Y10T29/4902 , Y10T29/49075
摘要： A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要翻译：一种磁传感器，用于检测在单个半导体衬底上形成多个巨磁电阻元件的三个轴向的磁场强度。在半导体衬底上形成厚膜; 在其平面上形成形成X轴和Y轴传感器的巨磁阻元件; 并且使用厚膜中的沟道的斜面形成形成Z轴传感器的巨磁阻元件。通道的每个斜面都可以由第一斜面和第二斜面构成，从而在具有较大倾斜角的第二斜面上形成磁敏元件。为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。

4. 发明申请

US20050230827A1 Semiconductor device, magnetic sensor, and magnetic sensor unit 有权
标题翻译：半导体器件，磁传感器和磁传感器单元
公开(公告)号：US20050230827A1
公开(公告)日：2005-10-20
申请号：US11085573
申请日：2005-03-22
申请人： Hiroshi Naito , Hideki Sato
发明人： Hiroshi Naito , Hideki Sato
IPC分类号： G01B7/00 , G01R33/00 , G01R33/02 , G01R33/07 , G01R33/09 , H01L21/44 , H01L23/31 , H01L23/485 , H01L23/50 , H01L23/58
CPC分类号： G01R33/09 , G01R33/02 , G01R33/07 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/1134 , H01L2224/1308 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/16145 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15159 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.
摘要翻译：一种半导体器件，包括半导体芯片; 焊盘电极; 电极部分; 布线部分。绝缘部分由电绝缘材料形成，覆盖半导体芯片的表面并且以至少暴露半导体芯片表面上的电极部分的状态密封传感器元件，布线部分和电极部分。电极部分位于与半导体芯片的厚度方向上不与传感器元件重叠的位置。

5. 发明申请

US20120272514A1 Magnetic Sensor and Manfacturing Method Therefor 审中-公开
标题翻译：磁传感器及其制造方法
公开(公告)号：US20120272514A1
公开(公告)日：2012-11-01
申请号：US13459644
申请日：2012-04-30
申请人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masaysoshi Omura
发明人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masaysoshi Omura
IPC分类号： H01F7/06
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , H01L43/12 , Y10T29/4902 , Y10T29/49075
摘要： A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要翻译：一种磁传感器，用于检测在单个半导体衬底上形成多个巨磁电阻元件的三个轴向的磁场强度。在半导体衬底上形成厚膜; 在其平面上形成形成X轴和Y轴传感器的巨磁阻元件; 并且使用厚膜中的沟道的斜面形成形成Z轴传感器的巨磁阻元件。通道的每个斜面都可以由第一斜面和第二斜面构成，从而在具有较大倾斜角的第二斜面上形成磁敏元件。为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。

6. 发明申请

US20070284684A1 SEMICONDUCTOR DEVICE, MAGNETIC SENSOR, AND MAGNETIC SENSOR UNIT 审中-公开
标题翻译：半导体器件，磁传感器和磁传感器单元
公开(公告)号：US20070284684A1
公开(公告)日：2007-12-13
申请号：US11837435
申请日：2007-08-10
申请人： Hiroshi Naito , Hideki Sato
发明人： Hiroshi Naito , Hideki Sato
IPC分类号： H01L43/00
CPC分类号： G01R33/09 , G01R33/02 , G01R33/07 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/1134 , H01L2224/1308 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/16145 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15159 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.
摘要翻译：一种半导体器件，包括半导体芯片; 焊盘电极; 电极部分; 布线部分。绝缘部分由电绝缘材料形成，覆盖半导体芯片的表面并且以至少暴露半导体芯片表面上的电极部分的状态密封传感器元件，布线部分和电极部分。电极部分位于与半导体芯片的厚度方向上不与传感器元件重叠的位置。

7. 发明申请

US20080173961A1 SEMICONDUCTOR DEVICE, MAGNETIC SENSOR, AND MAGNETIC SENSOR UNIT 审中-公开
标题翻译：半导体器件，磁传感器和磁传感器单元
公开(公告)号：US20080173961A1
公开(公告)日：2008-07-24
申请号：US11927395
申请日：2007-10-29
申请人： Hiroshi Naito , Hideki Sato
发明人： Hiroshi Naito , Hideki Sato
IPC分类号： H01L43/00
CPC分类号： G01R33/09 , G01R33/02 , G01R33/07 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/1134 , H01L2224/1308 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/16145 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15159 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.
摘要翻译：一种半导体器件，包括半导体芯片; 焊盘电极; 电极部分; 布线部分。绝缘部分由电绝缘材料形成，覆盖半导体芯片的表面并且以至少暴露半导体芯片表面上的电极部分的状态密封传感器元件，布线部分和电极部分。电极部分位于与半导体芯片的厚度方向上不与传感器元件重叠的位置。

8. 发明授权

US07309904B2 Semiconductor device, magnetic sensor, and magnetic sensor unit 有权
标题翻译：半导体器件，磁传感器和磁传感器单元
公开(公告)号：US07309904B2
公开(公告)日：2007-12-18
申请号：US11085573
申请日：2005-03-22
申请人： Hiroshi Naito , Hideki Sato
发明人： Hiroshi Naito , Hideki Sato
IPC分类号： H01L43/00
CPC分类号： G01R33/09 , G01R33/02 , G01R33/07 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/1134 , H01L2224/1308 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/16145 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15159 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.
摘要翻译：一种半导体器件，包括半导体芯片; 焊盘电极; 电极部分; 布线部分。绝缘部分由电绝缘材料形成，覆盖半导体芯片的表面并且以至少暴露半导体芯片表面上的电极部分的状态密封传感器元件，布线部分和电极部分。电极部分位于与半导体芯片的厚度方向上不与传感器元件重叠的位置。

9. 发明申请

US20080169807A1 Magnetic Sensor and Manufacturing Method Therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20080169807A1
公开(公告)日：2008-07-17
申请号：US10584666
申请日：2006-03-15
申请人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
发明人： Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
IPC分类号： G01R33/02 , H01F7/06
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/09 , G01R33/093 , H01L43/12 , Y10T29/4902 , Y10T29/49075
摘要： There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要翻译：提供了一种用于检测三个轴向上的磁场强度的小型磁传感器，其中在单个半导体衬底上形成多个巨磁电阻元件。在半导体衬底上形成厚膜; 在其平面上形成形成X轴传感器和Y轴传感器的巨磁阻元件; 并且使用形成在厚膜中的通道的斜面形成形成Z轴传感器的巨磁阻元件。关于通道形成，可以使用反应离子蚀刻和高密度等离子体CVD方法。此外，在厚膜和钝化膜之间形成绝缘膜，并用作蚀刻停止层。通道的每个斜面可以由第一斜面和第二斜面构成，使得在具有较大倾斜角的第二斜面上形成磁敏元件。为了优化相对于每个通道的斜率形状和倾斜度，可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。

10. 发明授权

US07265430B2 Semiconductor device, magnetic sensor, and magnetic sensor unit 有权
公开(公告)号：US07265430B2
公开(公告)日：2007-09-04
申请号：US11412923
申请日：2006-04-28
申请人： Hiroshi Naito , Hideki Sato
发明人： Hiroshi Naito , Hideki Sato
IPC分类号： H01L43/08
CPC分类号： G01R33/09 , G01R33/02 , G01R33/07 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/1134 , H01L2224/1308 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2224/16145 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15159 , H01L2924/15311 , H01L2924/181 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.

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