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1. 发明申请

US20060189106A1 Manufacture method for semiconductor device having field oxide film 审中-公开
标题翻译：具有场氧化膜的半导体器件的制造方法
公开(公告)号：US20060189106A1
公开(公告)日：2006-08-24
申请号：US11346270
申请日：2006-02-03
申请人： Syuusei Takami , Hiroaki Fukami
发明人： Syuusei Takami , Hiroaki Fukami
IPC分类号： H01L21/425
CPC分类号： H01L29/0638 , H01L29/78
摘要： On the principal surface of a silicon substrate, a side spacer made of silicon nitride is formed on the side wall of a lamination including a silicon oxide film, a silicon nitride film and a silicon oxide film. Thereafter, a channel stopper ion doped region is formed by implanting impurity ions by using as a mask the lamination, side spacer and resist layer. After the resist layer and side spacer are removed, a field oxide film is formed through selective oxidation using the lamination as a mask, and a channel stopper region corresponding to the ion doped region is formed. After the lamination is removed, a circuit device such as a MOS type transistor is formed in each device opening of the field oxide film.
摘要翻译：在硅衬底的主表面上，在包括氧化硅膜，氮化硅膜和氧化硅膜的叠片的侧壁上形成由氮化硅制成的侧隔板。此后，通过使用叠层，侧面间隔物和抗蚀剂层作为掩模，通过注入杂质离子形成通道阻挡离子掺杂区域。在除去抗蚀剂层和侧隔板之后，通过使用层压作为掩模通过选择性氧化形成场氧化膜，并且形成与离子掺杂区域对应的沟道停止区域。在去除层压之后，在场氧化物膜的每个器件开口中形成诸如MOS型晶体管的电路器件。

2. 发明申请

US20080003776A1 Manufacture Method for Semiconductor Device Having Field Oxide Film 有权
标题翻译：具有场氧化膜的半导体器件的制造方法
公开(公告)号：US20080003776A1
公开(公告)日：2008-01-03
申请号：US11851082
申请日：2007-09-06
申请人： Syuusei Takami , Hiroaki Fukami
发明人： Syuusei Takami , Hiroaki Fukami
IPC分类号： H01L21/76
CPC分类号： H01L29/0638 , H01L29/78
摘要： On the principal surface of a silicon substrate, a side spacer made of silicon nitride is formed on the side wall of a lamination including a silicon oxide film, a silicon nitride film and a silicon oxide film. Thereafter, a channel stopper ion doped region is formed by implanting impurity ions by using as a mask the lamination, side spacer and resist layer. After the resist layer and side spacer are removed, a field oxide film is formed through selective oxidation using the lamination as a mask, and a channel stopper region corresponding to the ion doped region is formed. After the lamination is removed, a circuit device such as a MOS type transistor is formed in each device opening of the field oxide film.
摘要翻译：在硅衬底的主表面上，在包括氧化硅膜，氮化硅膜和氧化硅膜的叠片的侧壁上形成由氮化硅制成的侧隔板。此后，通过使用叠层，侧面间隔物和抗蚀剂层作为掩模，通过注入杂质离子形成通道阻挡离子掺杂区域。在除去抗蚀剂层和侧隔板之后，通过使用层压作为掩模通过选择性氧化形成场氧化膜，并且形成与离子掺杂区域对应的沟道停止区域。在去除层压之后，在场氧化物膜的每个器件开口中形成诸如MOS型晶体管的电路器件。

3. 发明申请

US20060176142A1 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20060176142A1
公开(公告)日：2006-08-10
申请号：US11328255
申请日：2006-01-10
申请人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
发明人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
IPC分类号： H01L43/08 , H01L43/02 , H01L43/00 , H01L43/10 , H01L43/04 , H01L43/06
CPC分类号： H01L43/12 , G01R33/0206 , H01L27/22
摘要： A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.
摘要翻译：一种小型磁传感器包括三个轴向传感器，每个轴向传感器使用多个巨磁阻元件构成，其中X轴传感器和Y轴传感器布置在基板的嵌入层的平面上，并且巨磁阻元件形成 Z轴传感器形成在通过蚀刻嵌入层形成的突起的斜面上。可以通过高密度等离子体CVD方法或通过等离子体蚀刻和微波蚀刻在衬底上形成细长突起，从而在细长突起的斜面上形成巨磁电阻元件。

4. 发明授权

US07687367B2 Manufacture method for semiconductor device having field oxide film 有权
标题翻译：具有场氧化膜的半导体器件的制造方法
公开(公告)号：US07687367B2
公开(公告)日：2010-03-30
申请号：US11851082
申请日：2007-09-06
申请人： Syuusei Takami , Hiroaki Fukami
发明人： Syuusei Takami , Hiroaki Fukami
IPC分类号： H01L21/76
CPC分类号： H01L29/0638 , H01L29/78
摘要： On the principal surface of a silicon substrate, a side spacer made of silicon nitride is formed on the side wall of a lamination including a silicon oxide film, a silicon nitride film and a silicon oxide film. Thereafter, a channel stopper ion doped region is formed by implanting impurity ions by using as a mask the lamination, side spacer and resist layer. After the resist layer and side spacer are removed, a field oxide film is formed through selective oxidation using the lamination as a mask, and a channel stopper region corresponding to the ion doped region is formed. After the lamination is removed, a circuit device such as a MOS type transistor is formed in each device opening of the field oxide film.
摘要翻译：在硅衬底的主表面上，在包括氧化硅膜，氮化硅膜和氧化硅膜的叠片的侧壁上形成由氮化硅制成的侧隔板。此后，通过使用叠层，侧面间隔物和抗蚀剂层作为掩模，通过注入杂质离子形成通道阻挡离子掺杂区域。在除去抗蚀剂层和侧隔板之后，通过使用层压作为掩模通过选择性氧化形成场氧化膜，并且形成与离子掺杂区域对应的沟道停止区域。在去除层压之后，在场氧化物膜的每个器件开口中形成诸如MOS型晶体管的电路器件。

5. 发明授权

US07687284B2 Magnetic sensor and manufacturing method therefor 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US07687284B2
公开(公告)日：2010-03-30
申请号：US11328255
申请日：2006-01-10
申请人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
发明人： Hiroshi Naito , Hideki Sato , Hiroaki Fukami , Syuusei Takami
IPC分类号： H01L21/00 , G01R33/09
CPC分类号： H01L43/12 , G01R33/0206 , H01L27/22
摘要： A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.
摘要翻译：一种小型磁传感器包括三个轴向传感器，每个轴向传感器使用多个巨磁阻元件构成，其中X轴传感器和Y轴传感器布置在基板的嵌入层的平面上，并且巨磁阻元件形成 Z轴传感器形成在通过蚀刻嵌入层形成的突起的斜面上。可以通过高密度等离子体CVD方法或通过等离子体蚀刻和微波蚀刻在衬底上形成细长突起，从而在细长突起的斜面上形成巨磁电阻元件。

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