
基本信息:
- 专利标题: Magnetic Sensor and Manufacturing Method Therefor
- 专利标题(中):磁传感器及其制造方法
- 申请号:US10584666 申请日:2006-03-15
- 公开(公告)号:US20080169807A1 公开(公告)日:2008-07-17
- 发明人: Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
- 申请人: Hiroshi Naito , Hideki Sato , Yukio Wakui , Masayoshi Omura
- 优先权: JP2005-077010 20050317; JP2005-088828 20050325; JP2005-091616 20050328; JP2005-091617 20050328; JP2005-098498 20050330; JP2005-131857 20050428; JP2005-350487 20051205
- 国际申请: PCT/JP2006/305131 WO 20060315
- 主分类号: G01R33/02
- IPC分类号: G01R33/02 ; H01F7/06
摘要:
There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.
摘要(中):
提供了一种用于检测三个轴向上的磁场强度的小型磁传感器,其中在单个半导体衬底上形成多个巨磁电阻元件。 在半导体衬底上形成厚膜; 在其平面上形成形成X轴传感器和Y轴传感器的巨磁阻元件; 并且使用形成在厚膜中的通道的斜面形成形成Z轴传感器的巨磁阻元件。 关于通道形成,可以使用反应离子蚀刻和高密度等离子体CVD方法。 此外,在厚膜和钝化膜之间形成绝缘膜,并用作蚀刻停止层。 通道的每个斜面可以由第一斜面和第二斜面构成,使得在具有较大倾斜角的第二斜面上形成磁敏元件。 为了优化相对于每个通道的斜率形状和倾斜度,可以形成与形成巨磁阻元件没有直接关系的虚拟斜率。
公开/授权文献:
- US08178361B2 Magnetic sensor and manufacturing method therefor 公开/授权日:2012-05-15
IPC结构图谱:
G | 物理 |
--G01 | 测量;测试 |
----G01R | 测量电变量;测量磁变量(通过转换成电变量对任何种类的物理变量进行测量参见G01类名下的 |
------G01R33/00 | 测量磁变量的装置或仪器 |
--------G01R33/02 | .测量磁场或磁通量的方向或大小 |