专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07065123B2 Distributed feedback semiconductor laser for outputting beam of single wavelength 失效
标题翻译：用于输出单波长光束的分布式反馈半导体激光器
公开(公告)号：US07065123B2
公开(公告)日：2006-06-20
申请号：US10461771
申请日：2003-06-13
申请人： Hiroshi Mori , Tomoyuki Kikugawa , Yoshio Takahashi , Motoaki Fujita
发明人： Hiroshi Mori , Tomoyuki Kikugawa , Yoshio Takahashi , Motoaki Fujita
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： First and second diffraction grating layers are provided above a semiconductor substrate, and are spaced from each other in an output direction of a beam with a flat connecting layer sandwiched therebetween. An active layer is disposed above or below the first and second diffraction grating layers and the connecting layer. A cladding layer is disposed above the active layer or above the first and second diffraction grating layers and the connecting layer. A diffraction grating including the first and second diffraction grating layers has a plurality of slits penetrating from an upper surface to a lower surface that are perpendicular to the output direction of the beam. The connecting layer is formed from two layers grown epitaxially in a direction perpendicular to the output direction of the beam. One of the two layers is formed of the same material as the first and second diffraction grating layers.
摘要翻译：第一和第二衍射光栅层设置在半导体衬底之上，并且在其中夹有平坦连接层的梁的输出方向上彼此间隔开。有源层设置在第一和第二衍射光栅层和连接层的上方或下方。包层设置在有源层上方或第一和第二衍射光栅层和连接层上方。包括第一和第二衍射光栅层的衍射光栅具有从垂直于光束的输出方向的上表面到下表面穿透的多个狭缝。连接层由沿垂直于梁的输出方向的方向外延生长的两层形成。两层之一由与第一和第二衍射光栅层相同的材料形成。

2. 发明申请

US20060187976A1 Variable-wavelength semiconductor laser and gas sensor using same 审中-公开
标题翻译：可变波长半导体激光器和使用其的气体传感器
公开(公告)号：US20060187976A1
公开(公告)日：2006-08-24
申请号：US10548394
申请日：2005-02-10
申请人： Hiroshi Mori , Tomoyuki Kikugawa , Yoshio Takahashi , Toshiyuki Suzuki , Kiyoshi Kimura
发明人： Hiroshi Mori , Tomoyuki Kikugawa , Yoshio Takahashi , Toshiyuki Suzuki , Kiyoshi Kimura
IPC分类号： H01S3/10 , H01S5/20 , H01S5/00
CPC分类号： H01S5/12 , G01J3/433 , G01N21/39 , H01S5/02415 , H01S5/0683 , H01S5/1039 , H01S5/227
摘要： A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 μm to 2 μm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.
摘要翻译：可调波长半导体激光器包括n型半导体衬底，设置在n型半导体衬底上方并产生光的有源层，设置在有源层上方的p型覆层;以及波长选择部分，用于使从有源层中产生的光中选择性地仅振荡特定波长。能够以特定波长振荡的可调谐波长半导体层可以通过将有效层注入电流来进行，通过改变电流的大小来改变特定的波长。表示在有源层中产生的光的传播方向上的长度的器件长度为约200μm至500μm，并且有源层的宽度与在有源层中产生的光的传播方向垂直，并且显示为在与n型半导体基板平行的方向上的长度为1〜2μm左右。 p型包覆层包括具有低杂质浓度的轻掺杂包层和从有源层侧依次布置的具有高杂质浓度的重掺杂包层。

3. 发明授权

US06351479B1 Semiconductor laser having effective output increasing function 有权
标题翻译：半导体激光器具有有效的输出增加功能
公开(公告)号：US06351479B1
公开(公告)日：2002-02-26
申请号：US09307438
申请日：1999-05-10
申请人： Hiroshi Mori , Yasuhiro Kanaya , Yasuaki Nagashima , Tomoyuki Kikugawa , Yoshinori Nakano
发明人： Hiroshi Mori , Yasuhiro Kanaya , Yasuaki Nagashima , Tomoyuki Kikugawa , Yoshinori Nakano
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01S5/227 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3211
摘要： Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer and p-type cladding layer on an n-type semiconductor substrate. The concentration distribution of a p-type dopant from the active layer to the p-type cladding layer has a maximum value at a distance of 50 to 250 nm from the end of the active layer.
摘要翻译：公开了一种半导体激光器，即使在将Zn用作p型掺杂剂时，也能够防止p型掺杂剂扩散到有源层，同时进行充分的载流子阻挡，并且通过使光吸收最小化来获得高的发光效率和高的输出 p型覆层。该半导体激光器在n型半导体基板上具有有源层和p型覆盖层。从有源层到p型覆层的p型掺杂剂的浓度分布在距有源层的端部50〜250nm的距离处具有最大值。

4. 发明申请

US20060166386A1 Optical semiconductor device and its manufacturing method 审中-公开
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20060166386A1
公开(公告)日：2006-07-27
申请号：US10547404
申请日：2005-01-13
申请人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
发明人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
IPC分类号： H01L21/00 , H01L33/00 , H01L29/18
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/0045 , H01L33/24 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2201 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S5/305 , H01S5/3213 , H01S5/3434 , H01S5/34373 , H01S2301/18 , H01S2304/04
摘要： An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.
摘要翻译：光学半导体器件（1）具有由InP制成的半导体衬底（2），与半导体衬底（2）上方的半导体衬底（2）的上表面（2a）平行形成的有源层（7）），形成在有源层（7）下面的由InGaAsP构成的n型第一包层（6），形成在有源层（7）下方的由InP构成的p型第二包层（8）和形成有源层（7）的两个发光面的至少一个发光面的窗口区域（4a，4b）。窗口区域形成在来自发光小面的器件面（1a，1b）之间。考虑到n型第一包层（6）的折射率为na，p型第二包覆层（8）的折射率为nb，则得到NA> nb， n型第一包层（6）的折射率na高于p型第二包覆层（8）的折射率nb，从而偏转在p型第二包层（8）中产生的光的电场强度分布有源层（7）朝向n型第一包层（6）侧。

5. 发明授权

US4758086A Apparatus for measuring spectral power of a light beam 失效
标题翻译：用于测量光束的光谱功率的装置
公开(公告)号：US4758086A
公开(公告)日：1988-07-19
申请号：US7350
申请日：1987-01-27
申请人： Youji Sonobe , Seiichi Ishigaki , Tomoyuki Kikugawa
发明人： Youji Sonobe , Seiichi Ishigaki , Tomoyuki Kikugawa
IPC分类号： G01J1/02 , G01J1/42 , G01J3/12 , G01J3/18 , G01J3/28 , G01J3/30 , G01J3/36 , G01J3/447
CPC分类号： G01J3/447 , G01J1/4257 , G01J3/1256 , G01J3/18 , G01J3/36
摘要： In an optical measuring apparatus, a laser beam is transferred to a diffraction grating so that the laser beam is spectrally separated into respective wavelength components. The wavelength components are sequentially guided into a polarizing optical element in which the respective wavelength component are separated into S and P polarized components, when the diffraction grating is rotated. The S and P polarized components of the respective wavelengths are detected by photodetectors and electrical signals from the photodetectors are supplied to a signal processing unit. In the signal processing unit, the electrical signals corresponding to the P and S components are corrected with a spectral efficiency characteristic of the grating, a percent loss characteristic of the polarizing element and photoelectro conversion characteristics of the photodetectors and the corrected signals are analyzed to obtain an absolute value of the laser energy for the respective wavelength.
摘要翻译：在光学测量装置中，将激光束转移到衍射光栅，使得激光束被光谱分离成各个波长分量。当衍射光栅旋转时，波长分量被顺序地引导到偏振光学元件中，其中各个波长分量被分离成S和P偏振分量。各波长的S和P偏振分量由光检测器检测，并且来自光电检测器的电信号被提供给信号处理单元。在信号处理单元中，用光栅的光谱效率特性校正与P和S分量相对应的电信号，分析偏振元件的百分比损耗特性和光电检测器的光电转换特性和校正信号，以获得相应波长的激光能量的绝对值。

6. 发明授权

US06611333B1 Isopotomer absorption spectral analyzer and its method 失效
标题翻译： Isopotomer吸收光谱分析仪及其方法
公开(公告)号：US06611333B1
公开(公告)日：2003-08-26
申请号：US09936946
申请日：2001-09-20
申请人： Kiyoji Uehara , Naohiro Yoshida , Tomoyuki Kikugawa
发明人： Kiyoji Uehara , Naohiro Yoshida , Tomoyuki Kikugawa
IPC分类号： G01N2135
CPC分类号： G01N21/031 , G01N21/3103 , G01N21/3504 , G01N21/39 , G01N2201/0668
摘要： An isotopomer absorption spectral analyzing apparatus and its method for precisely measuring the isotope ratio by substantially equalizing the absorption signal levels of different species of isotopes. In an isotopomer absorption spectral analyzing apparatus, a sample cell (21) capable of providing optical paths of different optical lengths is installed, optical beams A, B are caused to enter the sample cell (21) and travel along paths of different optical lengths, thereby determining the abundance ratio between species of isotopes in molecules from the ratio between intensities of signals corresponding to the species of isotopes.
摘要翻译：同位素吸收光谱分析装置及其通过基本均衡不同种类的同位素吸收信号水平来精确测量同位素比的方法。在同位素吸收光谱分析装置中，安装能够提供不同光学长度的光路的样品池（21），使光束A，B进入样品池（21），沿着不同光程长度的路径行进，从而从同位素种类的信号强度之间的比值确定分子中同位素种类之间的丰度比。

7. 发明授权

US06697407B2 Semiconductor laser attaining high efficiency and high power, and method of manufacturing the same 有权
标题翻译：实现高效率和高功率的半导体激光器及其制造方法
公开(公告)号：US06697407B2
公开(公告)日：2004-02-24
申请号：US10061647
申请日：2002-02-01
申请人： Yasuaki Nagashima , Katsunori Shinone , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Katsunori Shinone , Tomoyuki Kikugawa
IPC分类号： H01S500
CPC分类号： H01S5/227 , H01S5/2201 , H01S5/2205 , H01S5/2226 , H01S5/2275
摘要： An n-type semiconductor substrate has a (100) crystal plane as an upper surface. A mesa stripe portion has a trapezoidal shape including an n-type first clad layer, an active layer and a p-type second clad layer sequentially stacked on the substrate and formed along a direction. A current block portion has a p-type current blocking layer and an n-type current blocking layer. A p-type third clad layer simultaneously covers both the upper surfaces of the mesa stripe portion and the current blocking portion. The inclination angle as being acute angle of the side surface of the mesa stripe portion is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.
摘要翻译： n型半导体衬底具有（100）晶面作为上表面。台面条状部分具有梯形，其包括依次层叠在基板上并沿<011>方向形成的n型第一包层，有源层和p型第二包层。当前块部分具有p型电流阻挡层和n型电流阻挡层。 p型第三覆盖层同时覆盖台面条状部分的上表面和电流阻挡部分。作为台面条状部分的侧面的锐角的倾斜角度接近（111）B晶面相对于（100）晶面的倾斜角，并且被设置为大于和角度小于（111）B晶面的倾斜角。

8. 发明授权

US07483470B2 Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency 有权
标题翻译：半导体激光器能够以高耦合效率与单模光纤耦合
公开(公告)号：US07483470B2
公开(公告)日：2009-01-27
申请号：US10553161
申请日：2005-03-15
申请人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimose , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimose , Tomoyuki Kikugawa
IPC分类号： H01S3/098 , H01S3/08
CPC分类号： G02B6/4202 , B82Y20/00 , H01S5/02284 , H01S5/028 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/34326 , H01S2301/185
摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.
摘要翻译：半导体激光器包括由InP构成的基板，在基板上形成为宽度为7〜14μm的n型包层，以及由InGaAsP和p型包层构成的n型包层的包括多量子阱结构的有源层由InP制成的层，它们形成在衬底上，其间插入有源层。半导体激光器仅在基本横向模式下振荡，并且从出射小面发射的光可以与外部单模光纤光学耦合。

9. 发明申请

US20060285560A1 Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency 有权
公开(公告)号：US20060285560A1
公开(公告)日：2006-12-21
申请号：US10553161
申请日：2005-03-15
申请人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
IPC分类号： H01S3/098 , H01S5/00 , H01S3/08
CPC分类号： G02B6/4202 , B82Y20/00 , H01S5/02284 , H01S5/028 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/34326 , H01S2301/185
摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.

10. 发明授权

US06987285B2 Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding 有权
标题翻译：可以通过包括不小于3.5微米的InGaAsP有源层和InGaAsP和InP包层的简单结构获得高功率光输出的半导体发光器件
公开(公告)号：US06987285B2
公开(公告)日：2006-01-17
申请号：US10692125
申请日：2003-10-23
申请人： Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/227 , H01S5/3213 , H01S5/3409
摘要： The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.
摘要翻译：半导体发光器件包括由InP形成的半导体衬底，有源层，由InGaAsP形成的n型覆层，以及由InP形成的p型覆层。有源层形成在半导体衬底的上侧。形成n型包覆层和p型包覆层，以将活性层保持在其间。假定n型包覆层的折射率为na，p型包覆层的折射率为nb，则为半导体发光元件，其设定为na> nb的关系，其中 n型包覆层的折射率na高于p型包层的折射率nb，由于由有源层产生的光被分散到n型包层侧，所以光学抑制p型包覆层的间隔带光吸收的损失，能够获得高功率光输出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式