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1. 发明授权

US06697407B2 Semiconductor laser attaining high efficiency and high power, and method of manufacturing the same 有权
标题翻译：实现高效率和高功率的半导体激光器及其制造方法
公开(公告)号：US06697407B2
公开(公告)日：2004-02-24
申请号：US10061647
申请日：2002-02-01
申请人： Yasuaki Nagashima , Katsunori Shinone , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Katsunori Shinone , Tomoyuki Kikugawa
IPC分类号： H01S500
CPC分类号： H01S5/227 , H01S5/2201 , H01S5/2205 , H01S5/2226 , H01S5/2275
摘要： An n-type semiconductor substrate has a (100) crystal plane as an upper surface. A mesa stripe portion has a trapezoidal shape including an n-type first clad layer, an active layer and a p-type second clad layer sequentially stacked on the substrate and formed along a direction. A current block portion has a p-type current blocking layer and an n-type current blocking layer. A p-type third clad layer simultaneously covers both the upper surfaces of the mesa stripe portion and the current blocking portion. The inclination angle as being acute angle of the side surface of the mesa stripe portion is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.
摘要翻译： n型半导体衬底具有（100）晶面作为上表面。台面条状部分具有梯形，其包括依次层叠在基板上并沿<011>方向形成的n型第一包层，有源层和p型第二包层。当前块部分具有p型电流阻挡层和n型电流阻挡层。 p型第三覆盖层同时覆盖台面条状部分的上表面和电流阻挡部分。作为台面条状部分的侧面的锐角的倾斜角度接近（111）B晶面相对于（100）晶面的倾斜角，并且被设置为大于和角度小于（111）B晶面的倾斜角。

2. 发明授权

US6069697A Optical transmission characteristic measuring apparatus and calibration method using the same 失效
标题翻译：光传输特性测量装置及使用其的校准方法
公开(公告)号：US6069697A
公开(公告)日：2000-05-30
申请号：US62484
申请日：1998-04-17
申请人： Takao Tanimoto , Hiroaki Endo , Hiroaki Ohtateme , Muneo Ishiwata , Yasuaki Nagashima
发明人： Takao Tanimoto , Hiroaki Endo , Hiroaki Ohtateme , Muneo Ishiwata , Yasuaki Nagashima
IPC分类号： G01M11/00 , G01J3/28
CPC分类号： G01M11/337
摘要： A processing unit reads out, from a memory, wavelength setting data corresponding to wavelength information from a key input section, and outputs a wavelength setting command corresponding to the wavelength setting data to a tunable-wavelength control section and a spectral wavelength control section. The tunable-wavelength control section controls a tunable-wavelength light source section to output a laser beam having a wavelength corresponding to the wavelength setting data. The spectral wavelength control section controls a spectroscope section to perform spectroscopy of the light having the wavelength corresponding to the wavelength setting data and output the resultant light. Output light from the tunable-wavelength light source section whose wavelength has been set is input to an object to be measured. Light passing through the object is input to the spectroscope section. The spectroscope section performs spectroscopy of only the light having the wavelength corresponding to the wavelength setting data. A light-receiving section receives the spectral light and photoelectrically converts it. The resultant light is converted into digital data by an A/D conversion section to be input as level data to a processing unit. The processing unit obtains a light-reception level on the basis of the digital level data.
摘要翻译：处理单元从存储器读出与键输入部分相对应的波长信息的波长设置数据，并将与波长设置数据相对应的波长设置命令输出到可调谐波长控制部分和光谱波长控制部分。可调波长控制部分控制可调谐波长光源部分，以输出具有对应于波长设置数据的波长的激光束。光谱波长控制部分控制分光镜部分对具有与波长设置数据相对应的波长的光进行光谱分析并输出所得到的光。将波长设定的可调谐波长光源部的输出光输入到被测量物体。通过物体的光被输入到分光器部分。分光器部分仅对具有与波长设置数据相对应的波长的光进行光谱分析。光接收部分接收光谱光并对其进行光电转换。所得到的光由A / D转换部分转换为数字数据，作为电平数据输入到处理单元。处理单元基于数字电平数据获得光接收电平。

3. 发明申请

US20060166386A1 Optical semiconductor device and its manufacturing method 审中-公开
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20060166386A1
公开(公告)日：2006-07-27
申请号：US10547404
申请日：2005-01-13
申请人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
发明人： Atsushi Yamada , Yasuaki Nagashima , Yoshiharu Shimose , Tomoyuki Kikugawa
IPC分类号： H01L21/00 , H01L33/00 , H01L29/18
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/0045 , H01L33/24 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2201 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S5/305 , H01S5/3213 , H01S5/3434 , H01S5/34373 , H01S2301/18 , H01S2304/04
摘要： An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.
摘要翻译：光学半导体器件（1）具有由InP制成的半导体衬底（2），与半导体衬底（2）上方的半导体衬底（2）的上表面（2a）平行形成的有源层（7）），形成在有源层（7）下面的由InGaAsP构成的n型第一包层（6），形成在有源层（7）下方的由InP构成的p型第二包层（8）和形成有源层（7）的两个发光面的至少一个发光面的窗口区域（4a，4b）。窗口区域形成在来自发光小面的器件面（1a，1b）之间。考虑到n型第一包层（6）的折射率为na，p型第二包覆层（8）的折射率为nb，则得到NA> nb， n型第一包层（6）的折射率na高于p型第二包覆层（8）的折射率nb，从而偏转在p型第二包层（8）中产生的光的电场强度分布有源层（7）朝向n型第一包层（6）侧。

4. 发明授权

US5141722A Deodorizing and sterilizing apparatus 失效
标题翻译：除臭和灭菌装置
公开(公告)号：US5141722A
公开(公告)日：1992-08-25
申请号：US695082
申请日：1991-05-03
申请人： Yasuaki Nagashima
发明人： Yasuaki Nagashima
IPC分类号： F24F3/16 , A61L2/20 , A61L9/01 , A61L9/015 , B01D53/38 , C01B11/02
CPC分类号： C01B11/029 , A61L2/20 , A61L9/015
摘要： A deodorizing and sterilizing apparatus includes a reaction chamber in which ozone generated by an ozone generator and chlorine dioxide generated by a chlorine dioxide generator react together to form chlorine trioxide and in which the chlorine trioxide is reacted with an article or air to be deodorized and sterilized, thereby deodorizing and sterilizing the article or air. The apparatus also includes an adsorbent for removing ozone and chlorine from a gas after reaction. With this construction, the apparatus is capable of performing an effective deodorizing and sterilizing process even at a low humidity level.
摘要翻译：除臭杀菌装置包括反应室，臭氧发生器产生的臭氧和由二氧化氯发生器产生的二氧化氯一起反应形成三氧化氯，其中三氯氧化物与制品或空气反应除臭灭菌从而对制品或空气进行除臭和灭菌。该装置还包括用于从反应后的气体中除去臭氧和氯的吸附剂。利用这种结构，该装置即使在低湿度水平下也能够进行有效的除臭和消毒处理。

5. 发明授权

US4780277A Method and apparatus for subjecting gases to discharge treatment 失效
标题翻译：用于使气体排放处理的方法和装置
公开(公告)号：US4780277A
公开(公告)日：1988-10-25
申请号：US859344
申请日：1986-05-05
申请人： Toshio Tanaka , Yasuaki Nagashima , Masato Sumiya , Shinji Hosono
发明人： Toshio Tanaka , Yasuaki Nagashima , Masato Sumiya , Shinji Hosono
IPC分类号： A61L9/015 , A61L9/22 , B01J19/08 , A61L9/20
CPC分类号： B01J19/088 , A61L9/015 , A61L9/22 , B01J2219/0847 , B01J2219/0849
摘要： A waste gas in treated by the sequence of discharge treatment and catalytic oxidation. A microbe-containing gas is disinfected by first mixing it with ozone, then subjecting the gas to discharge treatment and catalytic reaction successively.
摘要翻译：废气经排放处理和催化氧化处理。首先将含微生物的气体与臭氧混合，然后对气体进行排放处理和催化反应。

6. 发明授权

US07483470B2 Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency 有权
标题翻译：半导体激光器能够以高耦合效率与单模光纤耦合
公开(公告)号：US07483470B2
公开(公告)日：2009-01-27
申请号：US10553161
申请日：2005-03-15
申请人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimose , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimose , Tomoyuki Kikugawa
IPC分类号： H01S3/098 , H01S3/08
CPC分类号： G02B6/4202 , B82Y20/00 , H01S5/02284 , H01S5/028 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/34326 , H01S2301/185
摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.
摘要翻译：半导体激光器包括由InP构成的基板，在基板上形成为宽度为7〜14μm的n型包层，以及由InGaAsP和p型包层构成的n型包层的包括多量子阱结构的有源层由InP制成的层，它们形成在衬底上，其间插入有源层。半导体激光器仅在基本横向模式下振荡，并且从出射小面发射的光可以与外部单模光纤光学耦合。

7. 发明申请

US20060285560A1 Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency 有权
公开(公告)号：US20060285560A1
公开(公告)日：2006-12-21
申请号：US10553161
申请日：2005-03-15
申请人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
IPC分类号： H01S3/098 , H01S5/00 , H01S3/08
CPC分类号： G02B6/4202 , B82Y20/00 , H01S5/02284 , H01S5/028 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/34326 , H01S2301/185
摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.

8. 发明授权

US06987285B2 Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding 有权
标题翻译：可以通过包括不小于3.5微米的InGaAsP有源层和InGaAsP和InP包层的简单结构获得高功率光输出的半导体发光器件
公开(公告)号：US06987285B2
公开(公告)日：2006-01-17
申请号：US10692125
申请日：2003-10-23
申请人： Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
发明人： Yasuaki Nagashima , Yoshiharu Shimose , Atsushi Yamada , Tomoyuki Kikugawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/227 , H01S5/3213 , H01S5/3409
摘要： The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.
摘要翻译：半导体发光器件包括由InP形成的半导体衬底，有源层，由InGaAsP形成的n型覆层，以及由InP形成的p型覆层。有源层形成在半导体衬底的上侧。形成n型包覆层和p型包覆层，以将活性层保持在其间。假定n型包覆层的折射率为na，p型包覆层的折射率为nb，则为半导体发光元件，其设定为na> nb的关系，其中 n型包覆层的折射率na高于p型包层的折射率nb，由于由有源层产生的光被分散到n型包层侧，所以光学抑制p型包覆层的间隔带光吸收的损失，能够获得高功率光输出。

9. 发明授权

US08401044B2 Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device 有权
标题翻译：半导体发光元件，半导体发光元件的驱动方法，发光元件以及使用发光元件的光脉冲测试器
公开(公告)号：US08401044B2
公开(公告)日：2013-03-19
申请号：US13151597
申请日：2011-06-02
申请人： Shintaro Morimoto , Hiroshi Mori , Yasuaki Nagashima
发明人： Shintaro Morimoto , Hiroshi Mori , Yasuaki Nagashima
IPC分类号： H01S3/10 , H01S3/13
CPC分类号： H01S5/4087 , B82Y20/00 , H01S5/0287 , H01S5/1021 , H01S5/1092 , H01S5/1203 , H01S5/34306
摘要： [Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device.[Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13a with a gain wavelength λ1 of about 1.55 μm and an active layer 13b with a gain wavelength λ2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ1 and λ2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ2 is formed near the active layer 13b with the short gain wavelength λ2 and near a butt-joint coupling portion 19 between the active layers 13a and 13b, an upper electrode provided above the active layer 13b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13b when a driving current is applied to the active layer 13a.
摘要翻译： [任务]为了提供能够发射具有高光输出的多个波长范围的波长的光束的半导体发光元件，能够制造能够发光的半导体发光元件的半导体发光元件的驱动方法具有多个波长范围的波长的光束与高光输出，发光器件以及使用该发光器件的小型和高性能的光脉冲测试仪一起工作。 [分辨装置]在具有以下结构的半导体发光元件的驱动方法中，其中增益波长λ1为约1.55μm的有源层13a和增益波长λ2为约1.3μm的有源层13b被光耦合沿着光的引导方向按照增益波长λ1和λ2的长度的顺序串联布置，并且具有短增益波长λ2的布拉格波长的衍射光栅20以短增益波长形成在有源层13b附近 λ2并且在有源层13a和13b之间的对接接合部分19附近，设置在有源层13b上方的上电极与设置在半导体衬底的底表面上的下电极短路，使得漏电流当向有源层13a施加驱动电流时，不流入有源层13b。

10. 发明申请

US20120044481A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, DRIVING METHOD OF SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND OPTICAL PULSE TESTER USING LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件，半导体发光元件的驱动方法，发光器件和使用发光器件的光学脉冲测试仪
公开(公告)号：US20120044481A1
公开(公告)日：2012-02-23
申请号：US13151597
申请日：2011-06-02
申请人： Shintaro MORIMOTO , Hiroshi MORI , Yasuaki NAGASHIMA
发明人： Shintaro MORIMOTO , Hiroshi MORI , Yasuaki NAGASHIMA
IPC分类号： G01N21/84 , H01S5/06 , H01S5/028
CPC分类号： H01S5/4087 , B82Y20/00 , H01S5/0287 , H01S5/1021 , H01S5/1092 , H01S5/1203 , H01S5/34306
摘要： [Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device.[Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13a with a gain wavelength λ1 of about 1.55 μm and an active layer 13b with a gain wavelength λ2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ1 and λ2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ2 is formed near the active layer 13b with the short gain wavelength λ2 and near a butt-joint coupling portion 19 between the active layers 13a and 13b, an upper electrode provided above the active layer 13b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13b when a driving current is applied to the active layer 13a.
摘要翻译： [任务]为了提供能够发射具有高光输出的多个波长范围的波长的光束的半导体发光元件，能够制造能够发光的半导体发光元件的半导体发光元件的驱动方法具有多个波长范围的波长的光束与高光输出，发光器件以及使用该发光器件的小型和高性能的光脉冲测试仪一起工作。 [分辨装置]在具有以下结构的半导体发光元件的驱动方法中，其中增益波长λ1为约1.55μm的有源层13a和增益波长λ2为约1.3μm的有源层13b被光耦合沿着光的引导方向按照增益波长λ1和λ2的长度的顺序串联布置，并且具有短增益波长λ2的布拉格波长的衍射光栅20以短增益波长形成在有源层13b附近 λ2并且在有源层13a和13b之间的对接接合部分19附近，设置在有源层13b上方的上电极与设置在半导体衬底的底表面上的下电极短路，使得漏电流当向有源层13a施加驱动电流时，不流入有源层13b。

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