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1. 发明授权

US06709791B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this 有权
标题翻译：半色调相移光掩模和用于其的半色调相移光掩模的坯料以及使用其的图案形成方法
公开(公告)号：US06709791B1
公开(公告)日：2004-03-23
申请号：US09807276
申请日：2001-04-10
申请人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
发明人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/34
摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.
摘要翻译：本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案。

2. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

3. 发明授权

US5738959A Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same comprising fluorine in phase shift layer 失效
标题翻译：半色调相移光掩模，半色调相移光掩模坯，以及在相移层中制造含氟的方法
公开(公告)号：US5738959A
公开(公告)日：1998-04-14
申请号：US722439
申请日：1996-10-17
申请人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
发明人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out at a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译：对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。除铬原子以外，铬化合物至少含有氟原子。即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。因此，可以实现高分辨率光刻。由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。

4. 发明授权

US5916712A Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same 失效
标题翻译：半色调相移光掩模，半色调相移光掩模坯料及其制造方法
公开(公告)号：US5916712A
公开(公告)日：1999-06-29
申请号：US6587
申请日：1998-01-13
申请人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
发明人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译：对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。除铬原子以外，铬化合物至少含有氟原子。即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。因此，可以实现高分辨率光刻。由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。

5. 发明授权

US08124301B2 Gradated photomask and its fabrication process 有权
标题翻译：分级光掩模及其制造工艺
公开(公告)号：US08124301B2
公开(公告)日：2012-02-28
申请号：US12066203
申请日：2006-09-19
申请人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
发明人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/46 , G03F1/50
摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
摘要翻译：本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够半透明薄膜在遮光罩上具有良好的台阶覆盖率。光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

6. 发明授权

US5161233A Method for recording and reproducing information, apparatus therefor and recording medium 失效
标题翻译：记录和复制信息的方法，设备和记录介质
公开(公告)号：US5161233A
公开(公告)日：1992-11-03
申请号：US352525
申请日：1989-05-16
申请人： Makoto Matsuo , Minoru Utsumi , Chihaya Ogusu , Shunsuke Mukasa , Yoshiaki Kudo , Hiroyuki Obata , Takashi Aono , Hiroshi Mohri , Masato Koike , Hideaki Amano , Norikazu Saito
发明人： Makoto Matsuo , Minoru Utsumi , Chihaya Ogusu , Shunsuke Mukasa , Yoshiaki Kudo , Hiroyuki Obata , Takashi Aono , Hiroshi Mohri , Masato Koike , Hideaki Amano , Norikazu Saito
IPC分类号： G03G5/02 , G03G15/00 , G03G15/04 , G03G15/05 , G03G15/18 , G03G15/22 , G03G15/34 , G03G17/00 , G03G21/00 , G03G21/06 , G06K15/12 , G06K19/06 , G06K19/08 , G06K19/10 , G09F3/00 , G09F3/02 , G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/125 , G11B7/24 , G11B9/00 , G11B9/08 , G11B11/00 , G11B11/08 , G11B25/04 , H04N1/028 , H04N1/48 , H04N5/30
CPC分类号： G06K19/06046 , G03G15/04045 , G03G15/05 , G03G15/18 , G03G15/221 , G03G15/344 , G03G15/754 , G03G15/758 , G03G21/06 , G03G5/02 , G06K15/12 , G06K19/08 , G06K19/10 , G09F3/0292 , G11B11/00 , G11B11/08 , G11B25/04 , G11B7/00 , G11B7/0045 , G11B7/128 , G11B7/24 , G11B9/00 , G11B9/08 , H04N1/028 , H04N1/48 , G03G2217/0016 , G11B7/004
摘要： In the information recording an reproducing method and apparatus according to the present invention, a piece of picture image information is recorded as an analog quantity or a digital quantity an information carrying medium in a planar manner at a high density, charge potential is read for outputting electric signals to correspond to the recorded picture image information and then the outputted signals are printed out by means of various display unit or output device, with high quality and high resolution as well as ease processing of the information. The information carrying medium provides a long period of storage of information and enables stored picture image information to be repeatedly reproduced with a picture quality according to need. Particularly, it is, according to the present invention, possible to read and output local potential of an information carrying medium with predetermined scanning density at a desired time, and so pictures of high quality may be output as a silver salt photograph is taken and reproduced by optically scanning the film. Thus, the present invention may be applied to a wide field including photographing, copying and printing.

7. 发明授权

US06764792B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
标题翻译：半色调相移光掩模和用于生产它的半色调相移光掩模的空白
公开(公告)号：US06764792B1
公开(公告)日：2004-07-20
申请号：US09830598
申请日：2001-04-27
申请人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
发明人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/58
摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).
摘要翻译：本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和（103）。

8. 发明授权

US06493013B2 Method for recording and reproducing information, apparatus therefor and recording medium 失效
标题翻译：用于记录和再现信息的方法，其装置和记录介质
公开(公告)号：US06493013B2
公开(公告)日：2002-12-10
申请号：US08812559
申请日：1997-03-07
申请人： Hiroyuki Obata , Takashi Aono , Hiroshi Mohri , Masato Koike , Hideaki Amano , Norikazu Saito , Makoto Matsuo , Minoru Utsumi , Chihaya Ogusu , Shunsuke Mukasa , Yoshiaki Kudo
发明人： Hiroyuki Obata , Takashi Aono , Hiroshi Mohri , Masato Koike , Hideaki Amano , Norikazu Saito , Makoto Matsuo , Minoru Utsumi , Chihaya Ogusu , Shunsuke Mukasa , Yoshiaki Kudo
IPC分类号： B41J2385
CPC分类号： G06K19/06046 , G03G5/02 , G03G15/04045 , G03G15/05 , G03G15/18 , G03G15/221 , G03G15/344 , G03G15/754 , G03G15/758 , G03G21/06 , G03G2217/0016 , G06K15/12 , G06K19/08 , G06K19/10 , G09F3/0292 , G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/128 , G11B7/24 , G11B9/00 , G11B9/08 , G11B11/00 , G11B11/08 , G11B25/04 , H04N1/028 , H04N1/48
摘要： In the information recording an reproducing method and apparatus according to the present invention, a piece of picture image information is recorded as an analog quantity or a digital quantity an information carrying medium in a planar manner at a high density, charge potential is read for outputting electric signals to correspond to the recorded picture image information and then the outputted signals are printed out by means of various display unit or output device, with high quality and high resolution as well as ease processing of the information. The information carrying medium provides a long period of storage of information and enables stored picture image information to be repeatedly reproduced with a picture quality according to need. Particularly, it is, according to the present invention, possible to read and output local potential of an information carrying medium with predetermined scanning density at a desired time, and so pictures of high quality may be output as a silver salt photograph is taken and reproduced by optically scanning the film. Thus, the present invention may be applied to a wide field including photographing, copying and printing.
摘要翻译：在根据本发明的再现方法和装置的信息记录中，一片图像信息作为模拟量或数字量被以高密度的平面方式记录在信息载体中，读取电荷电位以便输出电信号对应于记录的图像信息，然后通过各种显示单元或输出装置以高质量和高分辨率打印出输出的信号以及信息的轻松处理。信息传送介质提供长时间的信息存储，并且可以根据需要使存储的图像图像信息以图像质量重复再现。特别地，根据本发明，可以在期望的时间读取和输出具有预定扫描密度的信息载体的局部电位，因此可以输出拍摄和再现银盐照片的高质量图像通过光学扫描该膜。因此，本发明可以应用于包括拍摄，复印和打印在内的广泛领域。

9. 发明授权

US5380608A Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide 失效
标题翻译：相移光掩模，其包含氧化铝层与氧化镁
公开(公告)号：US5380608A
公开(公告)日：1995-01-10
申请号：US974919
申请日：1992-11-12
申请人： Hiroyuki Miyashita , Masahiro Takahashi , Hiroshi Mohri
发明人： Hiroyuki Miyashita , Masahiro Takahashi , Hiroshi Mohri
IPC分类号： G03F1/26 , G03F1/29 , G03F1/30 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/26
摘要： The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.
摘要翻译：本发明涉及一种相移光掩模，其中由能够提供蚀刻选择性优异并且可以中断和自动中断蚀刻的蚀刻阻挡层的材料制成的膜，并且提供至少包括基板30的相移光掩模和由主要由氧化硅构成的材料制成的移相器图案，其直接设置在基板的表面上，或者设置在其间的不透明层37，所述相移光掩模的特征在于，表面30设置在表面上蚀刻阻挡层30，其包含Al 2 O 3与MgO，ZrO 2，Ta 2 O 5或HfO，或CrO x，CrN y，CrC z，CrO x N y，CrO x C z或CrO x N y C z或MgF 2 -2 x O y，CaF 2 -2 x O y，LiF 2 -2 x O y，BaF 2 -2 x O y，La 2 F 6 -2xOy或Ce2F6-2x Oy，从而当通过蚀刻制造移相器图案时，可以确切地和准确地蚀刻蚀刻停止层用于移相器的透明膜。

10. 发明申请

US20110294045A1 PHOTOMASK AND METHODS FOR MANUFACTURING AND CORRECTING PHOTOMASK 有权
标题翻译：光电子和制造和校正光电子的方法
公开(公告)号：US20110294045A1
公开(公告)日：2011-12-01
申请号：US13147634
申请日：2010-02-04
申请人： Takaharu Nagai , Hideyoshi Takamizawa , Hiroshi Mohri , Yasutaka Morikawa , Katsuya Hayano
发明人： Takaharu Nagai , Hideyoshi Takamizawa , Hiroshi Mohri , Yasutaka Morikawa , Katsuya Hayano
IPC分类号： G03F1/14
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译：本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。

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