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    • 5. 发明授权
    • Gradated photomask and its fabrication process
    • 分级光掩模及其制造工艺
    • US08124301B2
    • 2012-02-28
    • US12066203
    • 2006-09-19
    • Junji FujikawaShu ShimadaYuuichi YoshidaShiho SasakiTsuyoshi AmanoKimio ItoNobuhito ToyamaHiroshi Mohri
    • Junji FujikawaShu ShimadaYuuichi YoshidaShiho SasakiTsuyoshi AmanoKimio ItoNobuhito ToyamaHiroshi Mohri
    • G03F1/00G03F9/00
    • G03F1/46G03F1/50
    • The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
    • 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺,其使用通常可获得的光掩模坯料防止遮光膜的反射率增长,使得在形成半透明膜期间容易对准,并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模(100)包括在透明基板上包括具有期望图案的遮光膜(114)的遮光区域的混合物,其中形成图案的膜对光刻光基本上不透明;透射膜(113),透射膜 所述透光性的光刻光以及遮光膜(114)和半透明膜(113)依次层叠在透明基板(101)上; 半透明区域,其中仅有半透明膜(113); 透光区域既不存在遮光膜(114)也不存在半透明膜(113),其特征在于,半透明膜(113)相对于光刻光具有防反射功能。
    • 6. 发明授权
    • Blank for halftone phase shift photomask and halftone phase shift photomask
    • 用于半色调相移光掩模和半色调相移光掩模的空白
    • US06458496B2
    • 2002-10-01
    • US09736805
    • 2000-12-14
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • G03S900
    • G03F1/32B32B17/06
    • A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
    • 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜,所述半色调相移膜具有多层结构,其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料,然后用氯化气体蚀刻时,由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比,同时保持对短波长的曝光光的适用性 这是硅化物材料的特征,除了钽材料的特征的良好的化学稳定性和良好的加工性能之外,将能够高精度地进行图案化。 结果,可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。
    • 8. 发明授权
    • Phase shift photomask comprising a layer of aluminum oxide with
magnesium oxide
    • 相移光掩模,其包含氧化铝层与氧化镁
    • US5380608A
    • 1995-01-10
    • US974919
    • 1992-11-12
    • Hiroyuki MiyashitaMasahiro TakahashiHiroshi Mohri
    • Hiroyuki MiyashitaMasahiro TakahashiHiroshi Mohri
    • G03F1/26G03F1/29G03F1/30G03F9/00
    • G03F1/29G03F1/30G03F1/26
    • The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.
    • 本发明涉及一种相移光掩模,其中由能够提供蚀刻选择性优异并且可以中断和自动中断蚀刻的蚀刻阻挡层的材料制成的膜,并且提供至少包括基板30的相移光掩模和 由主要由氧化硅构成的材料制成的移相器图案,其直接设置在基板的表面上,或者设置在其间的不透明层37,所述相移光掩模的特征在于,表面30设置在表面上 蚀刻阻挡层30,其包含Al 2 O 3与MgO,ZrO 2,Ta 2 O 5或HfO,或CrO x,CrN y,CrC z,CrO x N y,CrO x C z或CrO x N y C z或MgF 2 -2 x O y,CaF 2 -2 x O y,LiF 2 -2 x O y,BaF 2 -2 x O y,La 2 F 6 -2xOy或Ce2F6-2x Oy,从而当通过蚀刻制造移相器图案时,可以确切地和准确地蚀刻蚀刻停止层用于移相器的透明膜。
    • 9. 发明申请
    • PHOTOMASK AND METHODS FOR MANUFACTURING AND CORRECTING PHOTOMASK
    • 光电子和制造和校正光电子的方法
    • US20110294045A1
    • 2011-12-01
    • US13147634
    • 2010-02-04
    • Takaharu NagaiHideyoshi TakamizawaHiroshi MohriYasutaka MorikawaKatsuya Hayano
    • Takaharu NagaiHideyoshi TakamizawaHiroshi MohriYasutaka MorikawaKatsuya Hayano
    • G03F1/14
    • G03F1/72G03F1/0076G03F1/0092G03F1/144G03F1/28G03F1/30G03F1/32G03F1/36G03F1/38G03F1/44G03F1/80
    • The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
    • 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模,不能解决辅助图案,而 保持焦点深度放大效果作为辅助图案,并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模,该主图案通过投影曝光被转印到转印目标表面,辅助图案形成在主图案附近而不被转印,其特征在于,主图案和辅助图案各自构成 从由相同材料制成的半透明膜,通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟,在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
    • 10. 发明申请
    • Dental adhesive and dental filler
    • 牙科粘合剂和牙科填料
    • US20060241206A1
    • 2006-10-26
    • US10552250
    • 2004-04-08
    • Norikazu UeyamaHiroshi Mohri
    • Norikazu UeyamaHiroshi Mohri
    • A61K6/00
    • A61K6/0073A61K6/0023C08L33/00
    • A dental adhesive composition includes an organic polymer that contains a unit (A) containing a (substituted) carboxyl group, which is represented by formula (I), and a unit (B) containing a (substituted) carbamoyl group, which is represented by a formula (II). In the organic polymer, the sum of the two units (A) and (B) accounts for at least 20 mol % of all the units that constitute the organic polymer, and the ratio of unit (A)/unit (B) is within a range from 0.6/1.0 to 1.0/0.6. When the quantity of the unit having a smaller quantity than the other unit in the units (A) and (B) within the polymer is deemed 100 mol %, then in at least 70 mol % of the unit having a smaller quantity, the carbon bonded to the above (substituted) carboxyl group and the carbon bonded to the above (substituted) carbamoyl group are either directly adjacent, or bonded together via a methylene group or ethylene group.
    • 牙科粘合剂组合物包括含有由式(I)表示的含有(取代的)羧基的单元(A)和含有(取代的)氨基甲酰基的单元(B)的有机聚合物,所述单元(B)由 式(II)。 在有机聚合物中,两个单元(A)和(B)的总和占构成有机聚合物的所有单元的至少20摩尔%,单元(A)/单元(B)的比例在 范围从0.6 / 1.0到1.0 / 0.6。 当聚合物内单元(A)和(B)中的其他单元的量少的单元的量被认为是100摩尔%时,则在至少70摩尔%的具有较小量的单元中,碳 与上述(取代的)羧基键合,并且与上述(取代的)氨基甲酰基键合的碳直接相邻或通过亚甲基或亚乙基键合在一起。