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    • 3. 发明授权
    • Mask structure exposure method
    • 面膜结构曝光方法
    • US06337161B2
    • 2002-01-08
    • US09161372
    • 1998-09-28
    • Keiko ChibaHideo KatoHiroshi Maehara
    • Keiko ChibaHideo KatoHiroshi Maehara
    • G03F900
    • G03F1/22G03F1/62
    • A mask structure to be used for X-ray exposure or the like in manufacturing semiconductor devices prevents contaminants from adhering and accumulating on the surface of a mask, thereby extending the life of the mask. In this mask structure, titanium oxide films are formed on front and back pellicles that protect a mask, composed of a support film and an X-ray absorber, from dust or the like. Titanium oxide decomposes contaminants by functioning as a photocatalyst, and prevents the adhesion and accumulation of contaminants by an antistatic function based on photoconductivity. When a titanium oxide film is formed on the surface of the mask itself, it is preferable that the film be formed outside the exposure area or the like.
    • 在制造半导体器件中用于X射线曝光等的掩模结构防止污染物粘附并积聚在掩模的表面上,从而延长掩模的使用寿命。 在该掩模结构中,在保护由支撑膜和X射线吸收体构成的掩模的灰尘等上的前面和后面防护薄膜上形成氧化钛膜。 氧化钛通过作为光催化剂起作用来分解污染物,并且通过基于光电导性的抗静电功能来防止污染物的粘附和积累。 当在掩模本身的表面上形成氧化钛膜时,优选将膜形成在曝光区域等之外。