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1. 发明授权

US06605853B2 Semiconductor device having heat protection circuits 有权
公开(公告)号：US06605853B2
公开(公告)日：2003-08-12
申请号：US09909878
申请日：2001-07-23
申请人： Hiroshi Imai , Hirokazu Itakura , Hiroyuki Ban
发明人： Hiroshi Imai , Hirokazu Itakura , Hiroyuki Ban
IPC分类号： H01L31058
CPC分类号： H01L23/34 , H01L27/0248 , H01L27/0255 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has plural output circuits. Each of the plural output circuits has a semiconductor switching element and a heat protection circuit including a diode. When the heat protection circuit in a predetermined output circuit detects that heat emitted from the semiconductor switching element in the predetermined output circuit, the heat protection circuit turns off the semiconductor switching element in the predetermined output circuit. The plural output circuits are thermally isolated from each other by a trench and an insulation film. The trench and the insulation film prevent the heat from being transmitted from the predetermined output circuit to an adjacent output circuit. Therefore, even if the heat, by which the semiconductor switching element in the predetermined output circuit is turned off, is generated at the predetermined output circuit, the semiconductor switching element in the adjacent output circuit is not turned off by the heat.

2. 发明授权

US6104076A Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US6104076A
公开(公告)日：2000-08-15
申请号：US748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L21/336 , H01L21/8249 , H01L27/02 , H01L27/06 , H01L27/085 , H01L29/739 , H01L29/78 , H01L29/76 , H01L23/58
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.

3. 发明授权

US06922105B2 Operational amplifier 失效
标题翻译：运算放大器
公开(公告)号：US06922105B2
公开(公告)日：2005-07-26
申请号：US10632849
申请日：2003-08-04
申请人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
发明人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
IPC分类号： H03F1/52 , H03F3/30 , H03F3/45 , H03F3/26
CPC分类号： H03F3/3071 , H03F3/45183 , H03F2203/30036 , H03F2203/30051 , H03F2203/45324 , H03F2203/45352 , H03F2203/45632 , H03F2203/45708
摘要： In an operational amplifier, a differential amplifying circuit is configured to amplify an input voltage inputted from the input terminal. An outputting transistor is connected to the output terminal. A driving transistor is connected to the differential amplifying circuit and the outputting transistor. The driving transistor turns on according to a control signal supplied from the differential amplifying circuit to the driving circuit. The driving transistor is also configured to drive the outputting transistor according to the control signal. A control signal reducing circuit, when a voltage is applied on the driving transistor through the outputting transistor, is configured to reduce the control signal within a range that the driving transistor is kept to on state. The voltage applied on the driving transistor exceeds a predetermined threshold voltage.
摘要翻译：在运算放大器中，差分放大电路被配置为放大从输入端输入的输入电压。输出晶体管连接到输出端子。驱动晶体管连接到差分放大电路和输出晶体管。驱动晶体管根据从差分放大电路向驱动电路提供的控制信号导通。驱动晶体管也被配置为根据控制信号来驱动输出晶体管。当通过输出晶体管对驱动晶体管施加电压时，控制信号降低电路被配置为在驱动晶体管保持导通状态的范围内减少控制信号。施加在驱动晶体管上的电压超过预定阈值电压。

4. 发明授权

US06242787B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242787B1
公开(公告)日：2001-06-05
申请号：US08748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.
摘要翻译：一种包括减小表面场强度型LDMOS晶体管的半导体器件，其可以防止当向其漏极施加反向电压时在沟道形成部分处的元件的击穿。在N型衬底中形成P阱和N阱以产生双阱结构，其中源极被设置为与N型衬底的电位相等。 N阱的漂移区域具有掺杂浓度以满足所谓的RESURF条件，其可以提供高的击穿电压低导通电阻。当向漏极施加反向电压时，包括N阱，P阱和N型衬底的寄生双极晶体管形成朝向衬底的通电路径，使得元件在沟道形成时击穿在施加反向电压时部分是可避免的。

5. 发明授权

US06831331B2 Power MOS transistor for absorbing surge current 失效
标题翻译：功率MOS晶体管，用于吸收浪涌电流
公开(公告)号：US06831331B2
公开(公告)日：2004-12-14
申请号：US09945621
申请日：2001-09-05
申请人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/1087 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.
摘要翻译：提供具有功率晶体管结构的半导体器件。功率晶体管结构包括独立地设置在半导体层的表面部分处的多个第一阱; 深部区域，其具有设置在所述第一阱之间的所述半导体层中的部分; 漏电极，连接到所述第一阱中的相应的漏极区; 源电极，其连接到第一阱中的各个源极区域和沟道阱区域，使得漏极电极或源极电极连接到感性负载; 以及连接构件，用于向深区域提供源极电位，其中当漏电极连接到感性负载时，连接构件可配置为连接到漏电极，并且当源电极连接到源电极时连接到源电极表示感性负载。

6. 发明授权

US09195115B2 Image projection device, image protection method, distance measuring device and distance measuring method 有权
标题翻译：图像投影装置，图像保护方法，距离测量装置和距离测量方法
公开(公告)号：US09195115B2
公开(公告)日：2015-11-24
申请号：US13501990
申请日：2010-10-04
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： G03B21/14 , G03B3/00 , G02B3/08 , G02B15/00 , G02B27/10 , G02B27/14 , G02B27/48 , G03B21/00
CPC分类号： G03B3/00 , G02B3/08 , G02B15/00 , G02B27/104 , G02B27/145 , G02B27/48 , G03B21/00 , G03B21/006
摘要： An image projection device includes: a variable-focus lens (2) in which focal length can be changed; scanning means (3) that scans a projection surface (12) by means of a light beam that is condensed by the variable-focus lens (2); distance-measuring means (9) that measures the distance from the variable-focus lens (2) to the projection surface (12); and control means (4) that controls the variable-focus lens (2) such that the focal length of the variable-focus lens (2) is greater than the distance measured by means of the distance-measuring means (9).
摘要翻译：一种图像投影装置包括：焦距可变的可变焦距透镜; 扫描装置（3），其通过由可变焦距透镜（2）会聚的光束扫描投影表面（12）; 距离测量装置（9），其测量从可变焦距透镜（2）到投影表面（12）的距离; 以及控制可变焦距透镜（2）的控制装置（4），使得可变焦距透镜（2）的焦距大于通过距离测量装置（9）测量的距离。

7. 发明授权

US09097965B2 Image projection device, image projection method, and image display device 有权
标题翻译：图像投影装置，图像投影方法和图像显示装置
公开(公告)号：US09097965B2
公开(公告)日：2015-08-04
申请号：US13502030
申请日：2010-10-04
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： G03B21/26 , G03B21/28 , G01B11/28 , G02B26/08 , G02B26/02 , H04N3/02 , G03B21/14 , G02B3/08 , G02B15/00 , G02B27/10 , G02B27/14 , G02B27/48
CPC分类号： G03B21/14 , G02B3/08 , G02B15/00 , G02B27/104 , G02B27/144 , G02B27/145 , G02B27/48 , G03B21/2033 , G03B21/208 , H04N9/3129
摘要： An image projection device includes beam generation means that emits a plurality of beams in one direction such that the plurality of beams are superimposed each other, a convergence angle of each beam being different from each other; and scanning means that scans projection surface with the beams emitted from beam generation means.
摘要翻译：图像投影装置包括：光束产生装置，其在一个方向上发射多个光束，使得多个光束彼此重叠，每个光束的会聚角彼此不同; 以及扫描装置，其用从光束产生装置发射的光束扫描投影面。

8. 发明授权

US08899754B2 Projection type image display apparatus and control method therefor 有权
标题翻译：投影型图像显示装置及其控制方法
公开(公告)号：US08899754B2
公开(公告)日：2014-12-02
申请号：US13263659
申请日：2010-03-09
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： G03B21/14 , G03B21/00 , G02B27/10 , G02B27/14 , G02B27/28 , G02F1/01
CPC分类号： G03B21/00 , G02B27/104 , G02B27/145 , G02B27/283 , G02F1/0136 , G03B21/005
摘要： There is provided a projection-type image display apparatus which is capable of solving the problem in which the reduction ratio of speckles is small. Light source emits a light beam that is modulated according to a video signal. Projector projects the light beam emitted from light source to display an image. Changer changes a polarized state of the light beam emitted from the light source to projector or changes a polarized state of the light beam projected by the projector. Controller repeatedly selects a plurality of predetermined particular polarized states according to a predetermined sequence. Controller switches the polarized state changed by the changer to the selected particular polarized states.
摘要翻译：提供了能够解决散斑减少率小的问题的投射型图像显示装置。光源发射根据视频信号调制的光束。投影仪投影从光源发出的光束显示图像。变换器将从光源发射的光束的偏振状态改变为投影仪，或改变由投影仪投影的光束的偏振状态。控制器根据预定的顺序重复选择多个预定的特定极化状态。控制器将由变换器更改的极化状态切换到所选择的特定极化状态。

9. 发明授权

US08816548B2 Drive unit with controller case including lever 有权
标题翻译：带控制器壳体的驱动单元包括杠杆
公开(公告)号：US08816548B2
公开(公告)日：2014-08-26
申请号：US13469126
申请日：2012-05-11
申请人： Hiroki Tomizawa , Hiroshi Imai
发明人： Hiroki Tomizawa , Hiroshi Imai
IPC分类号： H02K11/00 , H02K5/22
CPC分类号： H02K5/225 , H02K11/33
摘要： A drive unit includes a motor disposed in a motor case, a controller, disposed in a controller case, and a lever. The lever includes a supported portion that is fitted on a support of the controller case in a rotatable manner, a first action point at a first distance from the supported portion, and a second action point at a second distance from the supported portion. When the lever rotates from a close state toward an open state according to an application of a first force to the first action point, the second action point abuts on a specific part on the motor case, thereby generating a second force from the second action point to the specific part in a parallel direction of the axis of the motor case, with its reaction force reversely applied from the supported portion to the support as a third force.
摘要翻译：驱动单元包括设置在电动机壳体中的电动机，设置在控制器壳体中的控制器和杆。杠杆包括以可旋转的方式装配在控制器壳体的支撑件上的支撑部分，距离被支撑部分第一距离处的第一动作点和离被支撑部分第二距离的第二动作点。当所述杆根据第一力施加到所述第一动作点时从闭合状态朝向打开状态旋转时，所述第二动作点与所述电动机壳体上的特定部件邻接，从而产生来自所述第二动作点的第二力到电动机壳体的轴线的平行方向上的特定部分，其反作用力作为第三力从支撑部分反向施加到支撑件。

10. 发明申请

US20140153072A1 IMAGE DISPLAY DEVICES 有权
标题翻译：图像显示设备
公开(公告)号：US20140153072A1
公开(公告)日：2014-06-05
申请号：US14122612
申请日：2012-05-31
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： G02B26/10
CPC分类号： G02B26/10 , G02B15/00 , G02B17/023 , G02B26/101
摘要： An image display device may include a varifocal optical element that condenses a light beam emitted from a light source and scans a projection surface with the light beam from the varifocal optical element. The varifocal optical element may include lenses located side by side in a direction orthogonal to their optical axes that are in parallel with each other; an orthogonal plane mirror that reflects the beam that passes through one of the lens to the other lens; and an actuator that moves the orthogonal plane mirror in parallel along the optical axes of the lenses. The displacement of the actuator may be controlled based on the scanning angle.
摘要翻译：图像显示装置可以包括可变焦度光学元件，其将从光源发射的光束会聚并用来自变焦光学元件的光束扫描投影表面。变焦光学元件可以包括在与它们彼此平行的光轴正交的方向上并排定位的透镜; 将通过透镜中的一个的光束反射到另一透镜的正交平面镜; 以及沿着透镜的光轴平行移动正交平面镜的致动器。可以基于扫描角度来控制致动器的位移。

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