专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070051638A1 Electropolishing liquid, electropolishing method, and method for fabricating semiconductor device 审中-公开
标题翻译：电抛光液，电解抛光方法及制造半导体器件的方法
公开(公告)号：US20070051638A1
公开(公告)日：2007-03-08
申请号：US11591688
申请日：2006-11-01
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/00
CPC分类号： C09G1/02 , C25F3/02 , C25F3/16 , H01L21/32125
摘要： Electric conductivity is enhanced without causing coagulation or precipitation of polishing abrasive grains. In addition, good planarization is realized without inducing defects in a metallic film or a wiring which are to be polished. In an electropolishing method for planarizing the surface of a metallic film to be polished by moving a polishing pad (15) in sliding contact with the metallic film surface while oxidizing the metallic film surface through an electrolytic action in an electropolishing liquid E, the electropolishing liquid E contains at least polishing abrasive grains and an electrolyte for maintaining an electrostatically charged state of the polishing abrasive grains. Since the electropolishing liquid having a high electric conductivity is used, it is possible to obtain a high electrolyzing current and to enlarge the distance between electrodes. Besides, in the electropolishing method, the electropolishing liquid with a good dispersion state of the polishing abrasive grains is used, so that remaining of the abrasive grains and defects such as scratches are prevented from being generated upon polishing.
摘要翻译：电导率提高而不引起研磨磨粒的凝结或沉淀。此外，实现良好的平坦化，而不会引起要抛光的金属膜或布线的缺陷。在电抛光方法中，通过在电解抛光液体E中通过电解作用使金属膜表面氧化而移动与金属膜表面滑动接触的抛光垫（15）来平坦化待抛光的金属膜的表面，电抛光液 E至少含有抛光磨粒和用于保持抛光磨粒的静电充电状态的电解质。由于使用具有高导电性的电解抛光液体，因此可以获得高的电解电流并且扩大电极之间的距离。此外，在电抛光方法中，使用具有抛光磨粒的良好分散状态的电解抛光液，从而防止在研磨时残留磨粒和划痕等缺陷。

2. 发明申请

US20050224368A1 Polishing system and polishing method 审中-公开
标题翻译：抛光系统和抛光方法
公开(公告)号：US20050224368A1
公开(公告)日：2005-10-13
申请号：US10512185
申请日：2003-04-14
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/06 , B24B53/00 , B24B53/007 , C25F3/16 , H01L21/321 , B23H5/02
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16 , H01L21/32125
摘要： A polishing apparatus and a polishing method by which it is possible to restrain variations in the composition of an electrolytic solution 2 between a wafer 3 and a counter electrode 5, and the like, and to make current density distribution substantially constant in the plane of the wafer. The polishing apparatus, for planarizing a surface to be polished 3a by electrolytic combined polishing composed of a combination of electropolishing and mechanical polishing, includes a voltage impressing means 5 disposed oppositely to the surface to be polished 3a, and a discharging means for discharging foreign matter intermediately present between the voltage impressing means 5 and the object of polishing.
摘要翻译：可以抑制晶片3和对电极5之间的电解液2的组成变化等的抛光装置和抛光方法，并使电流密度分布在晶圆。用于通过电抛光和机械抛光组合的电解组合抛光来平坦化待抛光表面3a的抛光装置包括与待抛光表面3a相对设置的电压施加装置5，以及用于放电的放电装置电压施加装置5和抛光对象之间中间存在异物。

3. 发明申请

US20050178672A1 Polishing method, polishing device, and method of manufacturing semiconductor equipment 审中-公开
标题翻译：抛光方法，抛光装置以及制造半导体设备的方法
公开(公告)号：US20050178672A1
公开(公告)日：2005-08-18
申请号：US10512205
申请日：2003-04-22
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/08 , B23H3/04 , B23H3/08 , C25D3/16 , C25D7/00 , C25F3/02 , C25F3/22 , C25F7/00 , H01L21/304 , H01L21/306 , H01L21/3063 , B23H3/00
CPC分类号： C25F3/02 , B24B37/042 , B24B37/046 , C25F7/00 , H01L21/30625 , H01L21/3063
摘要： The object is to make it possible to pass an electric current to the object of polishing with a stable current density distribution up to the end point of polishing, to use the same plating apparatus, cleaning apparatus and other apparatuses as those conventionally used, and to carry out the conventional manufacturing process flow. A substrate (1) provided with a metallic film (2) and a opposite electrode (3) are disposed oppositely to each other with a predetermined distance therebetween in an electrolytic solution, and an electric current is passed to the metallic film (2) through the electrolytic solution by an anode (4) set out of contact with the metallic film (2), so as to electropolish the metallic film (2). Simultaneously with the electropolishing, wiping is conducted by sliding a pad on the metallic film.
摘要翻译：本发明的目的是使得可以以直到抛光终点的稳定的电流密度分布将电流传递到抛光对象，使用与常规使用的相同的电镀装置，清洁装置和其他装置，并且执行常规制造工艺流程。设置有金属膜（2）和相对电极（3）的基板（1）在电解液中彼此相对地设置有预定距离，并且电流通过金属膜（2）通过所述电解液通过与所述金属膜（2）不接触的阳极（4），以使所述金属膜（2）电镀。在电抛光的同时，通过在金属膜上滑动垫来进行擦拭。

4. 发明授权

US07141501B2 Polishing method, polishing apparatus, and method of manufacturing semiconductor device 失效
标题翻译：抛光方法，抛光装置和制造半导体器件的方法
公开(公告)号：US07141501B2
公开(公告)日：2006-11-28
申请号：US10512745
申请日：2003-04-14
申请人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
发明人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16
摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.
摘要翻译：提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。设置有金属膜18的基板17和对置电极15在电解液E中相对配置，电流通过电解液E通过金属膜18，金属膜18的表面用硬垫抛光14。

5. 发明申请

US20050239283A1 Polishing method, polishing apparatus, and method of manufacturing semiconductor device 失效
标题翻译：抛光方法，抛光装置和制造半导体器件的方法
公开(公告)号：US20050239283A1
公开(公告)日：2005-10-27
申请号：US10512745
申请日：2003-04-14
申请人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
发明人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
IPC分类号： B23H5/08 , B24B53/00 , B24B53/007 , C25F3/16 , H01L21/304 , H01L21/463 , B24B7/00
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16
摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.
摘要翻译：提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。设置有金属膜18和对置电极15的基板17在电解液E中彼此相对设置，电流通过电解溶液E通过金属膜18，并且金属膜18的表面用硬垫抛光14。

6. 发明授权

US07033943B2 Etching solution, etching method and method for manufacturing semiconductor device 失效
标题翻译：蚀刻溶液，蚀刻方法和制造半导体器件的方法
公开(公告)号：US07033943B2
公开(公告)日：2006-04-25
申请号：US10919580
申请日：2004-08-17
申请人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
发明人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
IPC分类号： H01L21/311
CPC分类号： H01L21/31053 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/3212 , H01L21/7684
摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.
摘要翻译：蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。蚀刻方法利用上述蚀刻溶液。此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

7. 发明申请

US20050070110A1 Etching solution, etching method and method for manufacturing semiconductor device 失效
标题翻译：蚀刻溶液，蚀刻方法和制造半导体器件的方法
公开(公告)号：US20050070110A1
公开(公告)日：2005-03-31
申请号：US10919580
申请日：2004-08-17
申请人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
发明人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
IPC分类号： H01L21/3205 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/4763 , H01L21/311
CPC分类号： H01L21/31053 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/3212 , H01L21/7684
摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.
摘要翻译：蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。蚀刻方法利用上述蚀刻溶液。此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

8. 发明授权

US06846227B2 Electro-chemical machining appartus 失效
标题翻译：电化学加工配件
公开(公告)号：US06846227B2
公开(公告)日：2005-01-25
申请号：US10085747
申请日：2002-02-28
申请人： Shuzo Sato , Zenya Yasuda , Masao Ishihara , Hiizu Ootorii , Takeshi Nogami , Naoki Komai
发明人： Shuzo Sato , Zenya Yasuda , Masao Ishihara , Hiizu Ootorii , Takeshi Nogami , Naoki Komai
IPC分类号： B23H3/00 , B24B7/22 , B24B21/04 , B24B37/04 , B24B57/02 , C25F7/00 , H01L21/3205 , H01L21/321 , H01L21/768 , B24B29/00
CPC分类号： B24B37/04 , B24B7/228 , B24B21/04 , B24B57/02 , Y10S451/908
摘要： The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.
摘要翻译：本发明的电化学加工装置被设计成通过有效地降低初始粗糙表面并且减少对金属膜的损伤去除过量的金属膜来平滑金属膜。为此，电化学加工装置对待加工表面上具有金属膜的被加工物进行电化学加工。这种装置具有用于保持待加工物体的装置，用于擦拭待加工物体的表面的擦拭器，用于将电解液供给到待加工物体的表面上的装置，设置在相对的位置的第一电极到被加工物的表面，设置在被加工物的表面的周边部分的第二电极，以及用于使电流在物体表面上的第二电极之间流动的电源为加工和第一个电极。

9. 发明申请

US20050082165A1 Electro-chemical machining apparatus 审中-公开
标题翻译：电化学加工设备
公开(公告)号：US20050082165A1
公开(公告)日：2005-04-21
申请号：US10983545
申请日：2004-11-08
申请人： Shuzo Sato , Zenya Yasuda , Masao Ishihara , Hiizu Ootorii , Takeshi Nogami , Naoki Komai
发明人： Shuzo Sato , Zenya Yasuda , Masao Ishihara , Hiizu Ootorii , Takeshi Nogami , Naoki Komai
IPC分类号： B23H3/00 , B24B7/22 , B24B21/04 , B24B37/04 , B24B57/02 , C25F7/00 , H01L21/3205 , H01L21/321 , H01L21/768 , B23H7/14
CPC分类号： B24B37/04 , B24B7/228 , B24B21/04 , B24B57/02 , Y10S451/908
摘要： The electrochemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electrochemical machining apparatus performs electrochemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.
摘要翻译：本发明的电化学加工装置被设计成通过有效地减少初始粗糙表面和去除对金属膜的损坏的过量金属膜来平滑金属膜。为此，电化学加工装置对待加工表面上具有金属膜的被加工物进行电化学加工。这种装置具有用于保持待加工物体的装置，用于擦拭待加工物体的表面的擦拭器，用于将电解液供给到待加工物体的表面上的装置，设置在相对的位置的第一电极到被加工物的表面，设置在被加工物的表面的周边部分的第二电极，以及用于使电流在物体表面上的第二电极之间流动的电源为加工和第一个电极。

10. 发明授权

US06797623B2 Methods of producing and polishing semiconductor device and polishing apparatus 失效
标题翻译：半导体器件和抛光装置的制造和抛光方法
公开(公告)号：US06797623B2
公开(公告)日：2004-09-28
申请号：US09800580
申请日：2001-03-08
申请人： Shuzo Sato , Yuji Segawa , Akira Yoshio , Hiizu Ootorii , Zenya Yasuda , Masao Ishihara , Takeshi Nogami , Naoki Komai
发明人： Shuzo Sato , Yuji Segawa , Akira Yoshio , Hiizu Ootorii , Zenya Yasuda , Masao Ishihara , Takeshi Nogami , Naoki Komai
IPC分类号： H01L21302
CPC分类号： B24B37/042 , B23H5/08 , B24B37/046 , B24B37/16 , B24B37/26 , C25F3/30 , C25F7/00 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76843
摘要： A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.
摘要翻译：一种生产方法和抛光半导体器件和抛光装置的方法，其能够容易地平坦化金属膜的初始不均匀性，除去过量金属膜的效率优异，并且能够抑制对层间绝缘膜的损伤在通过抛光使金属膜平坦化时，金属膜下方的抛光方法包括以下步骤：在阴极构件和铜膜之间插入包含螯合剂的电解液，在用作阴极的阴极构件和铜膜用作氧化铜膜的表面并形成氧化铜的螯合膜，选择性地除去与铜膜形状相对应的螯合膜的突出部分，以暴露铜膜的突出部分并重复上述螯合膜形成步骤和上述螯合膜去除步骤，直到突出使铜膜变平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式