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1. 发明授权

US07141501B2 Polishing method, polishing apparatus, and method of manufacturing semiconductor device 失效
标题翻译：抛光方法，抛光装置和制造半导体器件的方法
公开(公告)号：US07141501B2
公开(公告)日：2006-11-28
申请号：US10512745
申请日：2003-04-14
申请人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
发明人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16
摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.
摘要翻译：提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。设置有金属膜18的基板17和对置电极15在电解液E中相对配置，电流通过电解液E通过金属膜18，金属膜18的表面用硬垫抛光14。

2. 发明申请

US20050070110A1 Etching solution, etching method and method for manufacturing semiconductor device 失效
标题翻译：蚀刻溶液，蚀刻方法和制造半导体器件的方法
公开(公告)号：US20050070110A1
公开(公告)日：2005-03-31
申请号：US10919580
申请日：2004-08-17
申请人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
发明人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
IPC分类号： H01L21/3205 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/4763 , H01L21/311
CPC分类号： H01L21/31053 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/3212 , H01L21/7684
摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.
摘要翻译：蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。蚀刻方法利用上述蚀刻溶液。此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

3. 发明申请

US20070051638A1 Electropolishing liquid, electropolishing method, and method for fabricating semiconductor device 审中-公开
标题翻译：电抛光液，电解抛光方法及制造半导体器件的方法
公开(公告)号：US20070051638A1
公开(公告)日：2007-03-08
申请号：US11591688
申请日：2006-11-01
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/00
CPC分类号： C09G1/02 , C25F3/02 , C25F3/16 , H01L21/32125
摘要： Electric conductivity is enhanced without causing coagulation or precipitation of polishing abrasive grains. In addition, good planarization is realized without inducing defects in a metallic film or a wiring which are to be polished. In an electropolishing method for planarizing the surface of a metallic film to be polished by moving a polishing pad (15) in sliding contact with the metallic film surface while oxidizing the metallic film surface through an electrolytic action in an electropolishing liquid E, the electropolishing liquid E contains at least polishing abrasive grains and an electrolyte for maintaining an electrostatically charged state of the polishing abrasive grains. Since the electropolishing liquid having a high electric conductivity is used, it is possible to obtain a high electrolyzing current and to enlarge the distance between electrodes. Besides, in the electropolishing method, the electropolishing liquid with a good dispersion state of the polishing abrasive grains is used, so that remaining of the abrasive grains and defects such as scratches are prevented from being generated upon polishing.
摘要翻译：电导率提高而不引起研磨磨粒的凝结或沉淀。此外，实现良好的平坦化，而不会引起要抛光的金属膜或布线的缺陷。在电抛光方法中，通过在电解抛光液体E中通过电解作用使金属膜表面氧化而移动与金属膜表面滑动接触的抛光垫（15）来平坦化待抛光的金属膜的表面，电抛光液 E至少含有抛光磨粒和用于保持抛光磨粒的静电充电状态的电解质。由于使用具有高导电性的电解抛光液体，因此可以获得高的电解电流并且扩大电极之间的距离。此外，在电抛光方法中，使用具有抛光磨粒的良好分散状态的电解抛光液，从而防止在研磨时残留磨粒和划痕等缺陷。

4. 发明授权

US07033943B2 Etching solution, etching method and method for manufacturing semiconductor device 失效
标题翻译：蚀刻溶液，蚀刻方法和制造半导体器件的方法
公开(公告)号：US07033943B2
公开(公告)日：2006-04-25
申请号：US10919580
申请日：2004-08-17
申请人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
发明人： Hiizu Ohtorii , Kaori Tai , Hiroshi Horikoshi , Naoki Komai , Shuzo Sato
IPC分类号： H01L21/311
CPC分类号： H01L21/31053 , C09K13/06 , C09K13/08 , C23F1/26 , H01L21/3212 , H01L21/7684
摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.
摘要翻译：蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。蚀刻方法利用上述蚀刻溶液。此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

5. 发明申请

US20050224368A1 Polishing system and polishing method 审中-公开
标题翻译：抛光系统和抛光方法
公开(公告)号：US20050224368A1
公开(公告)日：2005-10-13
申请号：US10512185
申请日：2003-04-14
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/06 , B24B53/00 , B24B53/007 , C25F3/16 , H01L21/321 , B23H5/02
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16 , H01L21/32125
摘要： A polishing apparatus and a polishing method by which it is possible to restrain variations in the composition of an electrolytic solution 2 between a wafer 3 and a counter electrode 5, and the like, and to make current density distribution substantially constant in the plane of the wafer. The polishing apparatus, for planarizing a surface to be polished 3a by electrolytic combined polishing composed of a combination of electropolishing and mechanical polishing, includes a voltage impressing means 5 disposed oppositely to the surface to be polished 3a, and a discharging means for discharging foreign matter intermediately present between the voltage impressing means 5 and the object of polishing.
摘要翻译：可以抑制晶片3和对电极5之间的电解液2的组成变化等的抛光装置和抛光方法，并使电流密度分布在晶圆。用于通过电抛光和机械抛光组合的电解组合抛光来平坦化待抛光表面3a的抛光装置包括与待抛光表面3a相对设置的电压施加装置5，以及用于放电的放电装置电压施加装置5和抛光对象之间中间存在异物。

6. 发明申请

US20050239283A1 Polishing method, polishing apparatus, and method of manufacturing semiconductor device 失效
标题翻译：抛光方法，抛光装置和制造半导体器件的方法
公开(公告)号：US20050239283A1
公开(公告)日：2005-10-27
申请号：US10512745
申请日：2003-04-14
申请人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
发明人： Hiroshi Horikoshi , Takeshi Nogami , Shuzo Sato , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiizu Ohtorii
IPC分类号： B23H5/08 , B24B53/00 , B24B53/007 , C25F3/16 , H01L21/304 , H01L21/463 , B24B7/00
CPC分类号： B24B53/017 , B24B53/001 , C25F3/16
摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.
摘要翻译：提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。设置有金属膜18和对置电极15的基板17在电解液E中彼此相对设置，电流通过电解溶液E通过金属膜18，并且金属膜18的表面用硬垫抛光14。

7. 发明申请

US20050178672A1 Polishing method, polishing device, and method of manufacturing semiconductor equipment 审中-公开
标题翻译：抛光方法，抛光装置以及制造半导体设备的方法
公开(公告)号：US20050178672A1
公开(公告)日：2005-08-18
申请号：US10512205
申请日：2003-04-22
申请人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
发明人： Shuzo Sato , Takeshi Nogami , Shingo Takahashi , Naoki Komai , Kaori Tai , Hiroshi Horikoshi , Hiizu Ohtorii
IPC分类号： B23H5/08 , B23H3/04 , B23H3/08 , C25D3/16 , C25D7/00 , C25F3/02 , C25F3/22 , C25F7/00 , H01L21/304 , H01L21/306 , H01L21/3063 , B23H3/00
CPC分类号： C25F3/02 , B24B37/042 , B24B37/046 , C25F7/00 , H01L21/30625 , H01L21/3063
摘要： The object is to make it possible to pass an electric current to the object of polishing with a stable current density distribution up to the end point of polishing, to use the same plating apparatus, cleaning apparatus and other apparatuses as those conventionally used, and to carry out the conventional manufacturing process flow. A substrate (1) provided with a metallic film (2) and a opposite electrode (3) are disposed oppositely to each other with a predetermined distance therebetween in an electrolytic solution, and an electric current is passed to the metallic film (2) through the electrolytic solution by an anode (4) set out of contact with the metallic film (2), so as to electropolish the metallic film (2). Simultaneously with the electropolishing, wiping is conducted by sliding a pad on the metallic film.
摘要翻译：本发明的目的是使得可以以直到抛光终点的稳定的电流密度分布将电流传递到抛光对象，使用与常规使用的相同的电镀装置，清洁装置和其他装置，并且执行常规制造工艺流程。设置有金属膜（2）和相对电极（3）的基板（1）在电解液中彼此相对地设置有预定距离，并且电流通过金属膜（2）通过所述电解液通过与所述金属膜（2）不接触的阳极（4），以使所述金属膜（2）电镀。在电抛光的同时，通过在金属膜上滑动垫来进行擦拭。

8. 发明授权

US06520835B1 Polishing system, polishing method, polishing pad, and method of forming polishing pad 失效
标题翻译：抛光系统，抛光方法，抛光垫，以及形成抛光垫的方法
公开(公告)号：US06520835B1
公开(公告)日：2003-02-18
申请号：US09702078
申请日：2000-10-30
申请人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
发明人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B49/16
摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.
摘要翻译：公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性，以及使用该研磨系统的研磨方法。具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨，并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

9. 发明授权

US6139400A Polishing system and method with polishing pad pressure adjustment 失效
标题翻译：抛光系统和抛光垫压力调节方法
公开(公告)号：US6139400A
公开(公告)日：2000-10-31
申请号：US63006
申请日：1998-04-21
申请人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
发明人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
IPC分类号： B24B37/04 , B24B49/16 , B24B49/00
CPC分类号： B24B37/04 , B24B49/16
摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.
摘要翻译：公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性，以及使用该研磨系统的研磨方法。具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨，并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

10. 发明授权

US06722962B1 Polishing system, polishing method, polishing pad, and method of forming polishing pad 失效
标题翻译：抛光系统，抛光方法，抛光垫，以及形成抛光垫的方法
公开(公告)号：US06722962B1
公开(公告)日：2004-04-20
申请号：US09678436
申请日：2000-10-02
申请人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
发明人： Shuzo Sato , Hiizu Ohtorii , Yasuharu Ohkawa , Yutaka Ozawa , Taiichi Kusano
IPC分类号： B24B704
CPC分类号： B24B49/16 , B24B37/04
摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.
摘要翻译：公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性，以及使用该研磨系统的研磨方法。具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨，并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

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