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1. 发明申请

US20110200953A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20110200953A1
公开(公告)日：2011-08-18
申请号：US13025490
申请日：2011-02-11
申请人： Hiroshi ARIMA , Kousuke YOSHIHARA , Yuichi YOSHIDA , Yasushi TAKIGUCHI , Taro YAMAMOTO
发明人： Hiroshi ARIMA , Kousuke YOSHIHARA , Yuichi YOSHIDA , Yasushi TAKIGUCHI , Taro YAMAMOTO
IPC分类号： G03F7/30 , G03B27/52
CPC分类号： G03F7/3021
摘要： There is provided a developing apparatus capable of achieving high throughput. The developing apparatus includes an airtightly sealed processing vessel that forms a processing atmosphere therein; an atmosphere gas supply unit that supplies an atmosphere gas containing mist of a developing solution into the processing vessel in order to form a liquid film of the developing solution on a surface of a substrate loaded into the processing vessel; and a drying unit that dries the substrate in order to stop a developing process by the liquid film. A reaction between a resist and the developing solution can be stopped. Therefore, a developing process can be performed in parallel with a cleaning process performed by a cleaning module and high throughput is achieved.
摘要翻译：提供了能够实现高产量的显影装置。显影装置包括在其中形成处理气氛的气密密封处理容器; 气氛气体供给单元，其将含有显影液雾的气氛气体供给到处理容器中，以在装载到处理容器中的基板的表面上形成显影液的液膜; 以及干燥单元，其干燥基板以便通过液膜来停止显影处理。可以停止抗蚀剂与显影液的反应。因此，可以与由清洁模块执行的清洁处理并行执行显影处理，并且实现高生产率。

2. 发明申请

US20100233638A1 SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD, COATING AND DEVELOPING APPARATUS, COATING AND DEVELOPING METHOD, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理设备，基板处理方法，涂装和开发设备，涂装和开发方法以及存储介质
公开(公告)号：US20100233638A1
公开(公告)日：2010-09-16
申请号：US12720072
申请日：2010-03-09
申请人： Yuichi YOSHIDA , Hiroshi ARIMA , Taro YAMAMOTO , Kousuke YOSHIHARA
发明人： Yuichi YOSHIDA , Hiroshi ARIMA , Taro YAMAMOTO , Kousuke YOSHIHARA
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： H01L21/67748 , H01L21/67109 , H01L21/6715
摘要： The substrate treatment apparatus includes a heating plate that heats the substrate prepared by coating a surface of the substrate with a resist and exposing the resist-coated substrate to light; a surface treatment liquid atomizing unit that atomizes a surface treatment liquid used to improve wettability of the substrate with a developer that is supplied onto the resist; a cooling unit that cools the substrate heated by the heating plate; and a surface treatment liquid supply unit that supplies the atomized surface treatment liquid onto the substrate for a portion of the period from the time when the substrate is heated until the cooling means terminates the cooling of the substrate.
摘要翻译：基板处理装置包括加热板，其加热通过用抗蚀剂涂布基板的表面而制备的基板，并将抗蚀剂涂覆的基板曝光; 表面处理液体雾化单元，其用提供给抗蚀剂的显影剂使用于改善基材的润湿性的表面处理液雾化; 冷却单元，其冷却由所述加热板加热的所述基板; 以及表面处理液体供给单元，其从基板被加热直到冷却单元终止基板的冷却的期间的一部分，将雾化表面处理液供给到基板上。

3. 发明申请

US20090250079A1 SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS 有权
标题翻译：基板清洗方法和基板清洗装置
公开(公告)号：US20090250079A1
公开(公告)日：2009-10-08
申请号：US12400419
申请日：2009-03-09
申请人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
发明人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
IPC分类号： B08B7/04
CPC分类号： G03F7/168 , B08B3/024 , G03F7/3021 , H01L21/67051
摘要： The present invention relates to a substrate cleaning method for cleaning a substrate whose static contact angle with respect to water is 85 degrees or more. The substrate cleaning method includes a step in which the substrate is held horizontally by a substrate holder in such a manner that a central part of the substrate and a central part in rotation correspond to each other; a step in which, while the substrate holder is being rotated about a vertical axis, a cleaning liquid is discharged from a cleaning-liquid nozzle to the central part of the substrate and is spread over all the surface of the substrate by a centrifugal force; a step in which, while the substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a distance between an interface on a side of a to-be-discharged position of the gas in the to-be-discharged position of the cleaning liquid and an interface on a side of the to-be-discharged position of the cleaning liquid in the to-be-discharged position of the gas is set between 9 mm and 15 mm; and a step in which, while the substrate holder is being continuously rotated, the to-be-discharged position of the cleaning liquid is moved toward a periphery of the substrate at a speed lower than a speed at which the dried area is spread outward.
摘要翻译：本发明涉及一种清洗相对于水的静态接触角为85度以上的基板的基板清洗方法。基板清洗方法包括以下步骤：基板由基板保持器水平地保持，使得基板的中心部分和旋转中心部分彼此对应; 在衬底保持器围绕垂直轴线旋转的同时，清洗液从清洗液喷嘴排出到基板的中心部分，并通过离心力分散在基板的所有表面上; 在基板保持器持续旋转的同时，将基板上的清洗液的排出位置变更为离开基板的中心部的偏心位置，从而从气体喷嘴到基板的中心部分，以便在待处理气体的待排出位置的一侧的界面之间的距离处于这样的条件下形成清洁液体的干燥区域，清洁液体的排出位置和待排出位置的清洗液体的待排出位置一侧的界面设定在9mm〜15mm之间; 以及在衬底保持器持续旋转的同时，清洗液的排出位置以比干燥区域向外扩展的速度朝向衬底的周边移动的步骤。

4. 发明申请

US20100216078A1 DEVELOPING METHOD 有权
标题翻译：发展方法
公开(公告)号：US20100216078A1
公开(公告)日：2010-08-26
申请号：US12710510
申请日：2010-02-23
申请人： Taro YAMAMOTO , Kousuke Yoshihara , Yuichi Yoshida
发明人： Taro YAMAMOTO , Kousuke Yoshihara , Yuichi Yoshida
IPC分类号： G03C7/407
CPC分类号： H01L21/027 , G03F7/3021 , H01L21/67051 , H01L21/6715
摘要： Disclosed is a developing method that develops a substrate, which has a surface coated with a resist having been exposed, while the substrate is held horizontally and is rotating about a vertical axis. The method includes supplying a developing liquid from a discharge port of a developer nozzle onto the surface of the substrate, while moving the developer nozzle, disposed above the substrate, from a central portion of the substrate toward a peripheral portion of the substrate, and supplying a first rinse liquid from a discharge port of a first rinse nozzle onto the surface of the substrate, while moving the first rinse nozzle, disposed above the substrate, from the central portion of the substrate toward the peripheral portion of the substrate. The supplying of the developing liquid and the supplying the first rinse liquid are performed concurrently, while the first rinse nozzle is maintained nearer to a center of the substrate than the developer nozzle.
摘要翻译：公开了一种显影方法，其显影方法是在基板被水平地保持并且围绕垂直轴线旋转的同时，使具有被曝光的抗蚀剂的表面被覆的基板。该方法包括将显影剂喷嘴的排出口的显影液从衬底的中心部分朝向衬底的周边部分移动，将显影剂喷嘴的显影剂供给到衬底的表面上，将第一冲洗喷嘴的第一冲洗液从第一冲洗喷嘴的排出口喷射到基板的表面上，同时将基板上方的第一冲洗喷嘴从基板的中心部朝向基板的周边部分移动。同时进行显影液的供给和供给第一冲洗液，同时第一冲洗喷嘴比显影剂喷嘴更靠近基板的中心。

5. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

6. 发明申请

US20090035021A1 DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：开发方法，开发设备和存储介质
公开(公告)号：US20090035021A1
公开(公告)日：2009-02-05
申请号：US12173285
申请日：2008-07-15
申请人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
发明人： Taro YAMAMOTO , Hirofumi Takeguchi , Atsushi Ookouchi , Kousuke Yoshihara
IPC分类号： G03G15/08
CPC分类号： H01L21/6715 , G03F7/3021
摘要： The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate. Subsequently, in order to prevent the liquid film of the developing solution from being dried up, the developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force. In this manner, the developing nozzles are selected, corresponding to the process to be performed.
摘要翻译：本发明提供一种向已经涂覆有抗蚀剂并进行曝光处理的基板提供显影处理时将显影液稳定地供给到基板上的方法。在该方法中，将显影液从第一显影液喷嘴供给到基板上，以在基板的表面上形成带状区域，同时经由基板保持部使基板绕垂直轴旋转，其中带状区域的一端朝向基板的中心部分。此时，通过移动供给显影液的带状区域的位置，可以在基板的表面上形成显影液的液膜。接下来，为了防止显影液的液膜干燥，从第二显影液喷嘴供给显影液，以在基板的中心部分形成圆形区域，或形成带状区域的长度比从第一显影喷嘴供给的显影液的带状区域短。同时，基板经由基板保持部围绕垂直轴线旋转，从而通过离心力将显影液向基板的周边部分扩散。以这种方式，根据要执行的处理来选择显影喷嘴。

7. 发明申请

US20080142043A1 COATING FILM PROCESSING METHOD AND APPARATUS 有权
标题翻译：涂膜处理方法和装置
公开(公告)号：US20080142043A1
公开(公告)日：2008-06-19
申请号：US11950122
申请日：2007-12-04
申请人： Taro YAMAMOTO , Kousuke Yoshihara
发明人： Taro YAMAMOTO , Kousuke Yoshihara
IPC分类号： B08B7/04
CPC分类号： H01L21/6715 , G03F7/70341 , H01L21/67051
摘要： A coating film processing method is used for processing a coating film formed on a surface of a substrate to prepare for an immersion light exposure process arranged to perform light exposure through a liquid. The method includes supplying a solvent-containing liquid comprising a combination of a solvent and a solvent-ability decreasing agent for decreasing solvent ability, or a diluted solvent, onto an edge portion of the coating film, thereby performing edge portion cutting; and supplying a cleaning liquid onto the edge portion of the coating film, thereby performing edge portion cleaning, subsequently to the edge portion cutting.
摘要翻译：使用涂膜处理方法来处理形成在基板的表面上的涂膜，以准备用于通过液体进行曝光的浸没曝光处理。该方法包括将包含溶剂和溶剂能力降低剂的组合的含溶剂的液体或稀释溶剂供给到涂膜的边缘部分上，从而进行边缘部分切割; 并将清洗液供给到涂膜的边缘部分上，从而进行边缘部分的清洁。

8. 发明申请

US20110127236A1 DEVELOPING DEVICE AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20110127236A1
公开(公告)日：2011-06-02
申请号：US13024939
申请日：2011-02-10
申请人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Taro YAMAMOTO , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： C23F1/04
CPC分类号： G03F7/3028 , G03F7/3021
摘要： The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
摘要翻译：显影液的温度根据抗蚀剂的种类或抗蚀剂图案而变化。当扫描具有与衬底的有效面积的宽度匹配的长度的狭缝形喷射口的显影剂喷嘴时，施加显影溶液。在将其上涂覆有显影液的基板离开预定时间后，在扫描稀释剂喷嘴的同时供给稀释剂，从而基本上停止显影反应并使溶解的抗蚀剂组分扩散。可以通过控制显影液温度来快速溶解所需量的抗蚀剂，同时可以通过在预定时间内提供稀释剂而使溶解的抗蚀剂组分显示出不利影响之前，可以停止显影，从而获得具有均匀线的图案宽度和提高吞吐量。

9. 发明申请

US20090311632A1 DEVELOPING METHOD AND DEVELOPING APPARATUS 有权
标题翻译：发展方法和发展手段
公开(公告)号：US20090311632A1
公开(公告)日：2009-12-17
申请号：US12472728
申请日：2009-05-27
申请人： Hirofumi TAKEGUCHI , Taro YAMAMOTO , Kousuke YOSHIHARA
发明人： Hirofumi TAKEGUCHI , Taro YAMAMOTO , Kousuke YOSHIHARA
IPC分类号： G03F7/20 , G03D5/00
CPC分类号： G03F7/162 , G03F7/3021
摘要： A developing method comprising a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing the outer peripheral side of the wafer with the rotation of the wafer. Thus, a wetting property of a surface of a resist film formed on the wafer that is made hydrophobic can be improved, whereby a developer film can be efficiently formed and thus the developing process can be stabilized.
摘要翻译：一种显影方法，其包括显影步骤，其中当由旋转卡盘水平保持的晶片正在旋转时，通过将显影剂供应到晶片的表面上来显影晶片，其中在显影步骤之前提供预润湿步骤其中与来自位于旋转晶片表面的中心附近的位置的第一喷嘴一起供给显影剂，作为第二液体的去离子水从位于位置上的第二喷嘴供给比第一喷嘴更靠近晶片的外围周边部分，从而通过由离开晶粒的外周侧的去离子水形成的壁沿着晶片的旋转方向展开显影剂，晶圆。因此，可以提高形成在疏水性的晶片上的抗蚀剂膜的表面的润湿性，从而可以有效地形成显影剂膜，从而可以稳定显影处理。

10. 发明申请

US20070122737A1 COATING AND DEVELOPING SYSTEM AND COATING AND DEVELOPING METHOD 有权
标题翻译：涂料与开发体系和涂料与开发方法
公开(公告)号：US20070122737A1
公开(公告)日：2007-05-31
申请号：US11562648
申请日：2006-11-22
申请人： Seiki ISHIDA , Taro YAMAMOTO
发明人： Seiki ISHIDA , Taro YAMAMOTO
IPC分类号： G03B27/52 , G03C5/00
CPC分类号： G03F7/70341 , G03F7/70525 , G03F7/70991 , H01L21/0257
摘要： A coating and developing system for forming a resist film on a substrate by coating the substrate with a liquid resist and developing the resist film after the resist film has been processed by immersion exposure that forms a liquid layer on the surface of the substrate is capable of reducing difference in property among resist films formed on substrates. The coating and developing system includes: a cleaning unit for cleaning a surface of a substrate coated with a resist film; a carrying means for taking out the substrate from the cleaning unit and carrying the substrate to an exposure system that carries out an immersion exposure process; and a controller for controlling the carrying means such that a time interval between a wetting time point when the surface of the substrate is wetted with the cleaning liquid by the cleaning unit and a delivery time point when the substrate is delivered to the exposure system is equal to a predetermined set time interval. The set time interval is determined such that the substrate is subjected to the immersion exposure process after contact angle drop rate at which contact angle between the cleaning liquid and a surface of the substrate drops has dropped from an initial level at the wetting time point when the surface of the substrate is wetted with the cleaning liquid to a level far lower than the initial level.
摘要翻译：一种用于在基板上形成抗蚀剂膜的涂覆和显影系统，其中通过用液体抗蚀剂涂覆基板并在抗蚀剂膜已经通过在基板表面上形成液体层的浸渍曝光进行处理之后显影抗蚀剂膜，降低在基板上形成的抗蚀剂膜之间的性能差异。该涂覆和显影系统包括：用于清洁涂覆有抗蚀剂膜的基材的表面的清洁单元; 用于从所述清洁单元取出所述基板并将所述基板运送到进行浸没曝光处理的曝光系统的承载装置; 以及控制器，用于控制所述承载装置，使得当所述基板的表面被所述清洁单元与所述清洁液体接触的润湿时间点与所述基板被输送到所述曝光系统时的传送时间点之间的时间间隔相等到预定的设定时间间隔。确定设定时间间隔，使得在清洗液与基材表面之间的接触角下降的接触角下降率在浸润时间点的浸润时间点的初始水平下，使基板经受浸渍曝光处理衬底的表面被清洗液体润湿至远低于初始水平的水平。

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