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1. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

2. 发明申请

US20080160781A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：基板处理方法，基板处理系统和计算机可读存储介质
公开(公告)号：US20080160781A1
公开(公告)日：2008-07-03
申请号：US11958839
申请日：2007-12-18
申请人： Hideharu KYOUDA , Junichi Kitano , Osamu Miyahara , Kenji Tsutsumi
发明人： Hideharu KYOUDA , Junichi Kitano , Osamu Miyahara , Kenji Tsutsumi
IPC分类号： H01L21/31
CPC分类号： H01L21/31144 , H01L21/67207
摘要： In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate.
摘要翻译：在本发明中，在基板上进行多次图案化。在图案形成系统中，已经进行了第一轮图案化的基板被转印到平坦化膜形成单元，其中在基板上形成平坦化膜。然后将衬底转移到图案化系统并进行第二轮图案化。从平面化膜的成形处理完成到第二轮图案化开始的时间被控制为在基板之间是恒定的。根据本发明，在进行多次图案化的图案形成处理中，可以稳定地在基板上方形成具有期望尺寸的图案。

3. 发明申请

US20110155693A1 SUBSTRATE TREATMENT METHOD, COATING TREATMENT APPARATUS, AND SUBSTRATE TREATMENT SYSTEM 有权
标题翻译：基板处理方法，涂层处理装置和基板处理系统
公开(公告)号：US20110155693A1
公开(公告)日：2011-06-30
申请号：US13041935
申请日：2011-03-07
申请人： Kenji TSUTSUMI , Junichi KITANO , Osamu MIYAHARA , Hideharu KYOUDA
发明人： Kenji TSUTSUMI , Junichi KITANO , Osamu MIYAHARA , Hideharu KYOUDA
IPC分类号： C23F1/00
CPC分类号： H01L21/67225 , H01L21/67051 , H01L21/6715 , Y10S414/136 , Y10S414/141
摘要： In the coating treatment apparatus, in a first treatment chamber, the front and rear surfaces of the substrate held by a transfer arm are inverted by a turning mechanism, and a coating solution is applied from a coating nozzle to the rear surface of the substrate. The substrate is transferred into a second treatment chamber, in which the coating solution on the rear surface is heated by a heating unit to cure, thereby forming a coating film on the rear surface of the substrate. The formation of the coating film by the coating treatment apparatus is performed before exposure processing, whereby the rear surface of the substrate can be flat for the exposure processing.
摘要翻译：在涂布处理装置中，在第一处理室中，由转印臂保持的基板的前表面和后表面通过转动机构反转，并且涂布溶液从涂布喷嘴施加到基板的后表面。将基板转移到第二处理室中，其中通过加热单元将后表面上的涂布溶液加热固化，从而在基板的后表面上形成涂膜。在曝光处理之前，通过涂布处理装置形成涂膜，由此基板的后表面可以平坦地进行曝光处理。

4. 发明申请

US20110200923A1 SUBSTRATE TREATMENT METHOD 有权
标题翻译：基板处理方法
公开(公告)号：US20110200923A1
公开(公告)日：2011-08-18
申请号：US13022811
申请日：2011-02-08
申请人： Takafumi NIWA , Hiroshi NAKAMURA , Hideharu KYOUDA
发明人： Takafumi NIWA , Hiroshi NAKAMURA , Hideharu KYOUDA
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , H01L21/67178 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.
摘要翻译：一种基板处理方法，包括：第一处理工艺（S13至S16），用于对形成第一抗蚀剂的基板进行曝光，加热和显影，从而形成第一抗蚀剂图案;以及第二处理工艺（S17至S20），用于形成在其上形成第一抗蚀剂图案的基板上的第二抗蚀剂膜，暴露，加热和显影其上形成有第二抗蚀剂膜的基板，从而形成第二抗蚀剂图案。此外，基板处理方法在第二处理工序中基于第二抗蚀剂图案的线宽度的测量值和第二处理条件在第一处理工艺（S22至S25）中补偿第一处理条件（S26至S29）基于第一抗蚀剂图案的线宽的测量值。

5. 发明申请

US20080070167A1 EXPOSURE AND DEVELOPING METHOD 审中-公开
标题翻译：曝光和开发方法
公开(公告)号：US20080070167A1
公开(公告)日：2008-03-20
申请号：US11853416
申请日：2007-09-11
申请人： Nobuhiro TAKAHASHI , Satoru SHIMURA , Tetsu KAWASAKI , Hideharu KYOUDA
发明人： Nobuhiro TAKAHASHI , Satoru SHIMURA , Tetsu KAWASAKI , Hideharu KYOUDA
IPC分类号： G03C5/00
CPC分类号： G03F7/32 , G03F7/2041
摘要： An exposure and developing method includes a step of exposing a resist film having a protective surface on a surface thereof in the state that a liquid layer transparent to light is formed on the resist film, and developing the resist film after the exposure, wherein there is further provided a cleaning step for cleaning the surface of the resist film before the developing step with a cleaning liquid that contains a solvent of the protective film.
摘要翻译：曝光和显影方法包括以下步骤：在抗蚀剂膜上形成有透明的液体层的状态下在其表面上露出具有保护表面的抗蚀剂膜，并且在曝光之后使抗蚀剂膜显影，还提供了一种用于在显影步骤之前用含有保护膜的溶剂的清洁液清洁抗蚀剂膜的表面的清洁步骤。

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