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1. 发明申请

US20130075360A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20130075360A1
公开(公告)日：2013-03-28
申请号：US13431209
申请日：2012-03-27
申请人： Hiroko NAKAMURA , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko NAKAMURA , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： B29C33/42 , B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.
摘要翻译：根据一个实施例，提供了一种形成图案的方法，包括形成包括具有第一表面能的第一区域和在待处理膜上具有第二表面能的第二区域的引导图案，第一和第二区域沿一个方向交替布置，在引导图案上形成嵌段共聚物层，并且在嵌段共聚物层中引起微相分离，微相分离结构是层状嵌段共聚物图案。

2. 发明授权

US08636914B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08636914B2
公开(公告)日：2014-01-28
申请号：US13431209
申请日：2012-03-27
申请人： Hiroko Nakamura , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko Nakamura , Satoshi Tanaka , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： B29C33/42 , B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.
摘要翻译：根据一个实施例，提供了一种形成图案的方法，包括形成包括具有第一表面能的第一区域和在待处理膜上具有第二表面能的第二区域的引导图案，第一和第二区域沿一个方向交替布置，在引导图案上形成嵌段共聚物层，并且在嵌段共聚物层中引起微相分离，微相分离结构是层状嵌段共聚物图案。

3. 发明授权

US09073284B2 Method of forming pattern and laminate 有权
标题翻译：形成图案和层压板的方法
公开(公告)号：US09073284B2
公开(公告)日：2015-07-07
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
发明人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
IPC分类号： B32B7/04 , B82Y30/00 , G03F7/004 , G03F7/20 , G03F7/075 , G03F7/11 , G03F7/16 , G03F7/40
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.
摘要翻译：根据一个实施方案，提供了形成图案的方法，包括在基材上形成包含热交联性分子的热交联性分子层，在热交联性分子层上形成包含感光性组合物的感光性组合物层，化学结合热交联性分子通过加热，用能量射线选择性地照射感光性组合物层，在感光性组合物层上形成包含嵌段共聚物的嵌段共聚物层，在嵌段共聚物层中形成微相分离结构。

4. 发明授权

US08808973B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08808973B2
公开(公告)日：2014-08-19
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

5. 发明授权

US09017930B2 Pattern formation method and guide pattern material 有权
标题翻译：图案形成方法和指导图案材料
公开(公告)号：US09017930B2
公开(公告)日：2015-04-28
申请号：US13623237
申请日：2012-09-20
申请人： Hiroko Nakamura , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko Nakamura , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： G03F7/26 , G03F7/40 , H01L21/308 , H01L21/027 , H01L21/033 , H01L21/3213
CPC分类号： G03F7/40 , G03F7/26 , H01L21/0276 , H01L21/0337 , H01L21/308 , H01L21/32139 , Y10T428/24802
摘要： According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.
摘要翻译：根据一个实施例，图案形成方法包括在层上形成图案。该层具有第一表面能并且包括硅化合物。该图案具有与第一表面能不同的第二表面能。该方法包括在层和图案上形成嵌段聚合物。该方法包括形成选自层状结构和嵌段聚合物的圆柱形结构的结构，所述嵌段聚合物含有通过微相分离排列的聚合物。层状结构垂直于层表面取向。圆柱形结构被定向成具有平行于层表面的法线的轴线。第二表面能不小于聚合物的表面能的最大值或不大于聚合物的表面能的最小值。

6. 发明申请

US20130183828A1 PATTERN FORMATION METHOD AND GUIDE PATTERN MATERIAL 有权
标题翻译：图案形成方法和指南图案材料
公开(公告)号：US20130183828A1
公开(公告)日：2013-07-18
申请号：US13623237
申请日：2012-09-20
申请人： Hiroko NAKAMURA , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
发明人： Hiroko NAKAMURA , Satoshi Mikoshiba , Atsushi Hieno , Shigeki Hattori
IPC分类号： G03F7/40 , H01L21/308
CPC分类号： G03F7/40 , G03F7/26 , H01L21/0276 , H01L21/0337 , H01L21/308 , H01L21/32139 , Y10T428/24802
摘要： According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.
摘要翻译：根据一个实施例，图案形成方法包括在层上形成图案。该层具有第一表面能并且包括硅化合物。该图案具有与第一表面能不同的第二表面能。该方法包括在层和图案上形成嵌段聚合物。该方法包括形成选自层状结构和嵌段聚合物的圆柱形结构的结构，所述嵌段聚合物含有通过微相分离排列的聚合物。层状结构垂直于层表面取向。圆柱形结构被定向成具有平行于层表面的法线的轴线。第二表面能不小于聚合物的表面能的最大值或不大于聚合物的表面能的最小值。

7. 发明申请

US20120214094A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20120214094A1
公开(公告)日：2012-08-23
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/20 , H01L21/302 , G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

8. 发明申请

US20120127454A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20120127454A1
公开(公告)日：2012-05-24
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： G03B27/32
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

9. 发明授权

US09207531B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US09207531B2
公开(公告)日：2015-12-08
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： H01L21/31 , H01L21/469 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

10. 发明授权

US08633526B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08633526B2
公开(公告)日：2014-01-21
申请号：US13234657
申请日：2011-09-16
申请人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： H01L27/108
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。第一半导体层与第一电极膜的侧面相对。第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

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