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1. 发明申请

US20120178264A1 METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM 有权
标题翻译：用于形成氮化硅膜的方法和装置
公开(公告)号：US20120178264A1
公开(公告)日：2012-07-12
申请号：US13332691
申请日：2011-12-21
申请人： Hiroki MURAKAMI , Yosuke WATANABE , Kazuhide HASEBE
发明人： Hiroki MURAKAMI , Yosuke WATANABE , Kazuhide HASEBE
IPC分类号： H01L21/31 , C23C16/455
CPC分类号： C23C16/345 , C23C16/45525
摘要： A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.
摘要翻译：一种在待处理物体的表面上形成氮化硅膜的方法，该方法包括通过使用至少一种氨基硅烷化合物形成在待加工物体的表面上起氮化硅膜的晶种的种子层的作用，在将待加工物体的表面上形成氮化硅膜之前。

2. 发明申请

US20110263105A1 AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS 有权
标题翻译：非晶硅膜形成方法和非晶硅膜形成装置
公开(公告)号：US20110263105A1
公开(公告)日：2011-10-27
申请号：US13094043
申请日：2011-04-26
申请人： Kazuhide HASEBE , Hiroki MURAKAMI , Akinobu KAKIMOTO
发明人： Kazuhide HASEBE , Hiroki MURAKAMI , Akinobu KAKIMOTO
IPC分类号： H01L21/205 , C23C16/46 , C23C16/52 , C23C16/24 , C23C16/455 , B82Y40/00
CPC分类号： H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
摘要： The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.
摘要翻译：非晶硅膜形成方法包括通过加热基底并将氨基硅烷基气体流动到加热的基底上在基底的表面上形成籽晶层; 通过加热基底，在加热的基体的表面上的种子层上供给不含氨基的硅烷系气体，将不含氨基的硅烷类气体进行热分解，在种子层上形成非晶硅膜。

3. 发明申请

US20110312192A1 FILM FORMATION METHOD AND FILM FORMATION APPARATUS 有权
标题翻译：电影形成方法和电影制作装置
公开(公告)号：US20110312192A1
公开(公告)日：2011-12-22
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki MURAKAMI , Kazuhide HASEBE , Kazuya YAMAMOTO , Toshihiko TAKAHASHI , Daisuke SUZUKI
发明人： Hiroki MURAKAMI , Kazuhide HASEBE , Kazuya YAMAMOTO , Toshihiko TAKAHASHI , Daisuke SUZUKI
IPC分类号： H01L21/316 , C23C16/52
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

4. 发明申请

US20110151679A1 FILM FORMATION METHOD FOR FORMING SILICON-CONTAINING INSULATING FILM 有权
标题翻译：用于形成含硅绝缘膜的膜形成方法
公开(公告)号：US20110151679A1
公开(公告)日：2011-06-23
申请号：US13040565
申请日：2011-03-04
申请人： Kazuhide HASEBE , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide HASEBE , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/316 , H01L21/318
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

5. 发明申请

US20100105215A1 METHOD OF MODIFYING INSULATING FILM 有权
标题翻译：修改绝缘膜的方法
公开(公告)号：US20100105215A1
公开(公告)日：2010-04-29
申请号：US12632131
申请日：2009-12-07
申请人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
发明人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
IPC分类号： H01L21/31
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

6. 发明申请

US20110287629A1 SILICON FILM FORMATION METHOD AND SILICON FILM FORMATION APPARATUS 审中-公开
标题翻译：硅胶膜形成方法和硅胶膜形成装置
公开(公告)号：US20110287629A1
公开(公告)日：2011-11-24
申请号：US13110333
申请日：2011-05-18
申请人： Akinobu KAKIMOTO , Satoshi TAKAGI , Jyunji ARIGA , Norifumi KIMURA , Kazuhide HASEBE
发明人： Akinobu KAKIMOTO , Satoshi TAKAGI , Jyunji ARIGA , Norifumi KIMURA , Kazuhide HASEBE
IPC分类号： H01L21/285 , H01L21/306
CPC分类号： H01L21/76876 , C23C16/045 , C23C16/24 , H01L21/28556 , H01L21/76877
摘要： A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.
摘要翻译：硅膜形成方法包括第一成膜操作，蚀刻操作和第二成膜操作。在第一成膜操作中，形成第一硅膜以填充待处理物体的凹槽。在蚀刻操作中，通过蚀刻在第一成膜操作中形成的第一硅膜来加宽槽的开口。在第二成膜操作中，在蚀刻操作中在开槽加宽的槽上形成第二硅膜以填充凹槽。因此，在其上设置有沟槽的被处理物体的沟槽上形成硅膜。

7. 发明申请

US20120103518A1 FILM FORMATION APPARATUS 有权
标题翻译：胶片形成装置
公开(公告)号：US20120103518A1
公开(公告)日：2012-05-03
申请号：US13283869
申请日：2011-10-28
申请人： Akinobu KAKIMOTO , Katsuhiko KOMORI , Kazuhide HASEBE
发明人： Akinobu KAKIMOTO , Katsuhiko KOMORI , Kazuhide HASEBE
IPC分类号： H01L21/306 , C23C16/455
CPC分类号： H01L21/02057 , C23C16/0272 , C23C16/045 , C23C16/24 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/28556 , H01L21/3065 , H01L21/32135 , H01L21/76805 , H01L21/76814 , H01L21/76876 , H01L21/76877 , H01L29/41766
摘要： A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
摘要翻译：成膜装置包括用于供给氨基硅烷气体的气体供给机构和不包含氨基的硅烷系气体。在具有开口到达导电物质的绝缘膜的表面上和在开口的底面上形成种子层的工艺，通过将氨基硅烷基气体供应到处理室中，并通过在晶种层上形成硅膜将不含氨基的硅烷类气体供给到处理室中，在处理室中依次进行。

8. 发明申请

US20120028437A1 TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM 有权
标题翻译： TRENCH-FILLING方法和成膜系统
公开(公告)号：US20120028437A1
公开(公告)日：2012-02-02
申请号：US13194426
申请日：2011-07-29
申请人： Masahisa WATANABE , Kazuhide HASEBE
发明人： Masahisa WATANABE , Kazuhide HASEBE
IPC分类号： H01L21/762 , C23C16/24
CPC分类号： H01L21/67167 , H01L21/02164 , H01L21/02222 , H01L21/02304 , H01L21/02323 , H01L21/32055 , H01L21/32105 , H01L21/67207 , H01L21/76227
摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.
摘要翻译：填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧，种子层成为氧化硅。

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