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1. 发明授权

US07972469B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07972469B2
公开(公告)日：2011-07-05
申请号：US11738505
申请日：2007-04-22
申请人： Hiroji Hanawa , Andrew Nguyen , Keiji Horioka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger A. Lindley , Hong S. Yang
发明人： Hiroji Hanawa , Andrew Nguyen , Keiji Horioka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger A. Lindley , Hong S. Yang
IPC分类号： H01L21/00
CPC分类号： H01J37/3266 , H01J37/32623
摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要翻译：本发明的实施例涉及等离子体处理装置及其使用方法。在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

2. 发明申请

US20080260966A1 PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20080260966A1
公开(公告)日：2008-10-23
申请号：US11738507
申请日：2007-04-22
申请人： Hiroji Hanawa , Andrew Nguyen , Keiji Horioka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
发明人： Hiroji Hanawa , Andrew Nguyen , Keiji Horioka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
IPC分类号： H05H1/24
CPC分类号： H01J37/3266 , H01J37/32623
摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.
摘要翻译：本发明的实施例涉及等离子体处理装置及其使用方法。在一些实施例中，控制处理室中的等离子体的方法包括提供用于处理衬底并具有其中限定的处理体积的室，其中在操作期间将形成等离子体，所述室还具有等离子体控制磁体组件，其包括提供具有幅度的磁场的多个磁体在处理体积的上部区域中大于约10个高斯，并且在处理体积的接近待处理衬底的较低区域中小于约10个高斯; 向所述室供应处理气体; 以及从所述处理气体在所述处理容积中形成等离子体。

3. 发明申请

US20080257261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20080257261A1
公开(公告)日：2008-10-23
申请号：US11738505
申请日：2007-04-22
申请人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
发明人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
IPC分类号： H05H1/00
CPC分类号： H01J37/3266 , H01J37/32623
摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要翻译：本发明的实施例涉及等离子体处理装置及其使用方法。在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

4. 发明授权

US5387539A Method of manufacturing trench isolation 失效
标题翻译：制造沟槽隔离的方法
公开(公告)号：US5387539A
公开(公告)日：1995-02-07
申请号：US79673
申请日：1993-06-18
申请人： Hong S. Yang , Sung K. Kwon
发明人： Hong S. Yang , Sung K. Kwon
IPC分类号： H01L21/76 , H01L21/762 , H01L21/302
CPC分类号： H01L21/76229
摘要： A method of manufacturing a trench isolation comprising the steps of sequentially forming a first oxide layer a nitride layer and a first photoresist layer, forming a narrow trench and a wide trench, forming a first thermal oxide layer in the side and bottom face of trenches, forming a second oxide layer, depositing a first polysilicon oxide layer filling in the narrow trench by growing the first polysilicon layer growing into a second silicon layer, forming a third oxide layer, coating a second photoresist on the wide trench, and etching a third oxide layer. The present invention can provide a method of manufacturing a trench isolation which can prevent formation of voids in the narrow trench and the difference of height between narrow trench and wide trench, thereby preventing a conducting line short circuit and an increase of parasitic capacitance and a fall of the characteristic of the MOS transistor.
摘要翻译：一种制造沟槽隔离的方法，包括以下步骤：顺序地形成第一氧化物层氮化物层和第一光致抗蚀剂层，形成窄沟槽和宽沟槽，在沟槽的侧面和底面形成第一热氧化物层，形成第二氧化物层，通过生长生长到第二硅层中的第一多晶硅层，形成第三氧化物层，在宽沟槽上涂覆第二光致抗蚀剂，以及蚀刻第三氧化物，沉积填充在窄沟槽中的第一多晶硅氧化物层层。本发明可以提供一种制造沟槽隔离的方法，其可以防止窄沟槽中的空隙形成和窄沟槽与宽沟槽之间的高度差，从而防止导线短路和寄生电容的增加以及下降的MOS晶体管的特性。

5. 发明授权

US07829456B2 Method to modulate coverage of barrier and seed layer using titanium nitride 失效
标题翻译：使用氮化钛调制阻挡层和种子层覆盖的方法
公开(公告)号：US07829456B2
公开(公告)日：2010-11-09
申请号：US12257279
申请日：2008-10-23
申请人： Winsor Lam , Tza-Jing Gung , Hong S. Yang , Adolph Miller Allen
发明人： Winsor Lam , Tza-Jing Gung , Hong S. Yang , Adolph Miller Allen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76841 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，用于处理衬底的方法包括向处理室提供包括其中形成有特征的暴露介电层的衬底。包括氮化钛的掩模层可以选择性地沉积在特征的角落的顶部。阻挡层可以选择性地沉积在掩模层的顶部并进入特征的底部。可以蚀刻沉积在特征的底部上的阻挡层，以将阻挡层的至少一部分重新分布到特征的侧壁上。

6. 发明申请

US20080308416A1 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 有权
标题翻译：具有增加生命和突破性的飞溅目标
公开(公告)号：US20080308416A1
公开(公告)日：2008-12-18
申请号：US11764772
申请日：2007-06-18
申请人： Adolph Miller Allen , Ki Hwan Yoon , Ted Guo , Hong S. Yang , Sang-Ho Yu
发明人： Adolph Miller Allen , Ki Hwan Yoon , Ted Guo , Hong S. Yang , Sang-Ho Yu
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3435
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要翻译：用于溅射室的溅射靶包括安装有溅射板的背板。在一个版本中，背板包括具有包括环形凹槽的前表面的圆形板。溅射板包括包括溅射表面的圆盘和具有圆形脊的后侧表面，该圆形脊的形状和尺寸适于装配到背板的环形槽中。

7. 发明申请

US20080099329A1 POSITION CONTROLLED DUAL MAGNETRON 有权
标题翻译：位置控制双磁铁
公开(公告)号：US20080099329A1
公开(公告)日：2008-05-01
申请号：US11553880
申请日：2006-10-27
申请人： Cristopher M. Pavloff , Winsor Lam , Tza-Jing Gung , Hong S. Yang , Ilyoung Richard Hong
发明人： Cristopher M. Pavloff , Winsor Lam , Tza-Jing Gung , Hong S. Yang , Ilyoung Richard Hong
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3452 , H01J37/3455
摘要： A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.
摘要翻译：一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。磁控管具有不同的尺寸，强度和不平衡特性。源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。每个磁控管可以使其等离子体在其径向外部位置短路。

8. 发明申请

US20100243440A1 Mechanism for continuously varying radial position of a magnetron 有权
标题翻译：连续变化磁控管径向位置的机理
公开(公告)号：US20100243440A1
公开(公告)日：2010-09-30
申请号：US12794452
申请日：2010-06-04
申请人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza Jing Gung , Hong S. Yang , Vincent E. Burkhart
发明人： Keith A. Miller , Anantha K. Subramani , Maurice E. Ewert , Tza Jing Gung , Hong S. Yang , Vincent E. Burkhart
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译：一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管机构或连接在枢转臂之间并由外部滑块移动的电缆。磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。

9. 发明授权

US07767064B2 Position controlled dual magnetron 有权
标题翻译：位置控制双磁控管
公开(公告)号：US07767064B2
公开(公告)日：2010-08-03
申请号：US11553880
申请日：2006-10-27
申请人： Cristopher M. Pavloff , Winsor Lam , Tza-Jing Gung , Hong S. Yang , Ilyoung Richard Hong
发明人： Cristopher M. Pavloff , Winsor Lam , Tza-Jing Gung , Hong S. Yang , Ilyoung Richard Hong
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3452 , H01J37/3455
摘要： A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.
摘要翻译：一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。磁控管具有不同的尺寸，强度和不平衡特性。源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。每个磁控管可以使其等离子体在其径向外部位置短路。

10. 发明授权

US07186319B2 Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry 有权
标题翻译：多轨磁控管具有更均匀的沉积和减小的旋转不对称性
公开(公告)号：US07186319B2
公开(公告)日：2007-03-06
申请号：US11029641
申请日：2005-01-05
申请人： Hong S. Yang , Tza-Jing Gung , Jian-Xin Lei , Ted Guo
发明人： Hong S. Yang , Tza-Jing Gung , Jian-Xin Lei , Ted Guo
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , H01J37/3405
摘要： A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.
摘要翻译：具有卷绕形状且围绕其旋转的目标中心不对称的多轨磁控管。等离子体轨道形成为相对的内部和外部磁极之间的闭合回路，优选地相对于目标中心并且优选地通过旋转轴线而形成为两个或三个径向布置且螺旋形的反向传播轨迹。极点形状可以被优化以产生符合函数L = ar 的累积轨迹长度分布。经过数次迭代的计算机化优化，可以测试极点形状，使其在制造的极片中具有不同的磁体分布的溅射均匀性。如果均匀性不能令人满意，则使用不同的n值，不同数量的轨道或不同的极宽重复设计迭代。优化可减少方位角侧壁不对称性，提高径向沉积均匀性。

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