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1. 发明申请

US20080278614A1 SOLID-STATE IMAGING DEVICE HAVING A PLURALITY OF LINES FORMED IN AT LEAST TWO LAYERS ON SEMICONDUCTOR SUBSTRATE 失效
标题翻译：具有在半导体基板上的至少两层形成的多条线的固态成像装置
公开(公告)号：US20080278614A1
公开(公告)日：2008-11-13
申请号：US11969527
申请日：2008-01-04
申请人： Hirohisa OHTSUKI , Ryohei MIYAGAWA , Motonari KATSUNO , Mikiya UCHIDA
发明人： Hirohisa OHTSUKI , Ryohei MIYAGAWA , Motonari KATSUNO , Mikiya UCHIDA
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14623 , H01L27/14643
摘要： In a MOS-type solid-state imaging device 1, in pixels 101 to 104 in which lines in an upper layer (charge transfer lines 1018 to 1048) are formed in shifted positions located toward a center L1 of an image area, each two oppositely disposed pixels with the center L1 of the image area sandwiched therebetween, such as a pixel 101 and a pixel 104 have the following relation. In each of the pixels 101 and 104, power supply lines 1016 and 1046, vertical signal lines 1017 and 1047, and charge transfer lines 1018 and 1048 relating to each of the pixels 101 and 104 are arranged symmetrically with respect to an imaginary plane extending from the center L1 of a sensor 10 in a direction orthogonal to the drawing page in an X-axis direction.
摘要翻译：在MOS型固态成像装置1中，在像素101〜104中，上层（电荷传输线1018〜1048）中的线形成在位于中心L 1〜像素101和像素104之间的夹着图像区域的中心L 1 1的两个相对设置的像素的像素区域具有以下关系。在每个像素101和104中，与像素101和104中的每一个相关的电源线1016和1046，垂直信号线1017和1047以及电荷传输线1018和1048相对于从传感器10的中心L 1在垂直于绘图页的方向上沿X轴方向。

2. 发明申请

US20090026563A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20090026563A1
公开(公告)日：2009-01-29
申请号：US12172548
申请日：2008-07-14
申请人： Motonari KATSUNO , Ryohei MIYAGAWA , Hirohisa OHTSUKI
发明人： Motonari KATSUNO , Ryohei MIYAGAWA , Hirohisa OHTSUKI
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643
摘要： A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.
摘要翻译：固态成像装置包括第一布线层，第二布线层，基板接触和第一接触。衬底接触相对于形成周边像素的光接收部分的布置相对于形成中心像素的光接收部分从衬底接触件的布置偏移或不偏移移位量r 从周边部朝向中央部。第一接触件相对于周边像素的光接收部分的布置从第一接触件相对于中心像素的光接收部分的布置移位到从周边部分朝向中央部分。移位量s1大于移动量r。

3. 发明申请

US20080277702A1 SOLID-STATE IMAGING DEVICE AND CAMERA HAVING THE SAME 有权
标题翻译：固态成像设备和具有相同功能的摄像机
公开(公告)号：US20080277702A1
公开(公告)日：2008-11-13
申请号：US12054038
申请日：2008-03-24
申请人： Motonari KATSUNO , Ryohei MIYAGAWA , Hirohisa OHTSUKI
发明人： Motonari KATSUNO , Ryohei MIYAGAWA , Hirohisa OHTSUKI
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609
摘要： Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.
摘要翻译：提供了一种包括单位像素的固态成像装置，其中单位像素包括形成在半导体衬底上的公共阱上的包括第一单位像素和第二单位像素的两种单位像素。第一单位像素包括：将光转换成信号电荷的至少一个光电转换区域; 所述第一半导体区域形成在所述共同阱上并且具有与所述公用阱的导电类型相同的导电类型; 并且所述第一触点电连接到所述第一半导体区域。第二单位像素包括：至少一个光电转换区域; 所述第二半导体区域形成在所述公井上，并且具有与所述公共井的导电类型相反的导电类型; 并且所述第二触点电连接到所述第二半导体区域。

4. 发明申请

US20110080508A1 SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：US20110080508A1
公开(公告)日：2011-04-07
申请号：US12948223
申请日：2010-11-17
申请人： Motonari KATSUNO , Ryohei MIYAGAWA
发明人： Motonari KATSUNO , Ryohei MIYAGAWA
IPC分类号： H04N5/335
CPC分类号： H04N5/335
摘要： In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance AH (AV) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance BH (BV) between neighboring vertexes of the disposition region.
摘要翻译：在固态图像拾取装置中，难以将与像素阵列区域的图像高度相对应的最佳入射角与相机透镜的光入射特性相匹配，从而导致由于灵敏度阴影引起的图像质量劣化。各个微透镜以二维方式设置，即以行和列方向布置。特别地，微透镜被布置成使得布置微透镜的布置区域的每一侧相对于连接配置区域的相邻顶点的线具有凹曲线。换句话说，配置区域的一对相对侧的中心点之间的距离AH（AV）被设定为小于配置区域的相邻顶点之间的距离BH（BV）。

5. 发明申请

US20110006387A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20110006387A1
公开(公告)日：2011-01-13
申请号：US12822743
申请日：2010-06-24
申请人： Motonari KATSUNO , Ryohei MIYAGAWA
发明人： Motonari KATSUNO , Ryohei MIYAGAWA
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14629 , H01L27/14645
摘要： A photodiode is formed for each pixel of a semiconductor substrate. An insulating film is formed on the semiconductor substrate, the insulating film having a depressed portion over the photodiode. A buried film having a higher refractive index than the insulating film is formed in the depressed portion. The cross sectional area of the depressed portion along a plane parallel to the light-receiving surface of the semiconductor substrate gradually increases at positions further away from the light-receiving surface of the semiconductor substrate.
摘要翻译：为半导体衬底的每个像素形成光电二极管。绝缘膜形成在半导体衬底上，绝缘膜在光电二极管上具有凹陷部分。在凹陷部分中形成具有比绝缘膜高的折射率的掩埋膜。沿着与半导体基板的受光面平行的平面的凹部的截面积在远离半导体基板的受光面的位置处逐渐增大。

6. 发明申请

US20100270637A1 SOLID-STATE IMAGINING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20100270637A1
公开(公告)日：2010-10-28
申请号：US12834632
申请日：2010-07-12
申请人： Motonari KATSUNO , Ryohei MIYAGAWA
发明人： Motonari KATSUNO , Ryohei MIYAGAWA
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译：固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。

7. 发明申请

US20110284980A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20110284980A1
公开(公告)日：2011-11-24
申请号：US13106244
申请日：2011-05-12
申请人： Hiroshi Sakoh , Masao KATAOKA , Motonari KATSUNO , Masayuki TAKASE , Jun HIRAI
发明人： Hiroshi Sakoh , Masao KATAOKA , Motonari KATSUNO , Masayuki TAKASE , Jun HIRAI
IPC分类号： H01L31/0232
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/14627 , H01L27/14645
摘要： A solid-state imaging device according to an aspect of the present invention includes: a first photodiode and a second photodiode; a first optical waveguide formed above the first photodiode; a second optical waveguide formed above the second photodiode; a first color filter which is formed above the first optical waveguide and transmits mainly light having a first wavelength; a second color filter which is formed above the second optical waveguide and transmits mainly light having a second wavelength; a first microlens formed above the first color filter; and a second microlens formed above the second color filter, wherein the first wavelength is longer than the second wavelength, and the first optical waveguide has a first width smaller than a second width of the second optical waveguide, the first and second widths being in a direction parallel to the semiconductor substrate.
摘要翻译：根据本发明的一个方面的固态成像装置包括：第一光电二极管和第二光电二极管; 形成在第一光电二极管上方的第一光波导; 形成在第二光电二极管上方的第二光波导; 第一滤色器，其形成在第一光波导上方，主要透过具有第一波长的光; 第二滤色器，其形成在第二光波导上方，主要透过具有第二波长的光; 形成在第一滤色器上方的第一微透镜; 以及形成在所述第二滤色器上方的第二微透镜，其中所述第一波长比所述第二波长长，并且所述第一光波导具有小于所述第二光波导的第二宽度的第一宽度，所述第一和第二宽度为方向平行于半导体衬底。

8. 发明申请

US20110080509A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110080509A1
公开(公告)日：2011-04-07
申请号：US12966286
申请日：2010-12-13
申请人： Motonari KATSUNO , Kazuhiro YAMASHITA , Kosaku SAEKI
发明人： Motonari KATSUNO , Kazuhiro YAMASHITA , Kosaku SAEKI
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： G02B3/02 , G02B3/0056 , G02B5/045 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H04N5/2254
摘要： A solid-state imaging device according to an implementation of the present invention is a solid-state imaging device including a plurality of unit pixels arranged in a matrix, and each of the unit pixels includes a photodiode which performs photoelectric conversion on light so as to convert the light into an electric signal, a top lens which collects incident light, and an intralayer lens which collects, to the photodiode, the incident light collected by the top lens, and a centroid of the photodiode is displaced from a center of the unit pixel into a first direction, the top lens is formed into an asymmetric shape so as to have a centroid displaced from the center of the unit pixel into the first direction, and the intralayer lens is formed to have a centroid displaced from the center of the unit pixel into the first direction.
摘要翻译：根据本发明的实施方式的固态成像装置是包括以矩阵形式排列的多个单位像素的固态成像装置，并且每个单位像素包括在光上进行光电转换的光电二极管，以便将光转换为电信号，收集入射光的顶部透镜以及聚光透镜中的由顶部透镜收集的入射光的内部透镜，并且光电二极管的质心从单元的中心位移像素进入第一方向，顶部透镜被形成为不对称形状，以使得具有从单位像素的中心向第一方向偏移的质心，并且层内透镜形成为具有从中心位移的质心单位像素进入第一个方向。

9. 发明申请

US20110063486A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110063486A1
公开(公告)日：2011-03-17
申请号：US12950387
申请日：2010-11-19
申请人： Kosaku SAEKI , Motonari KATSUNO , Kazuhiro YAMASHITA
发明人： Kosaku SAEKI , Motonari KATSUNO , Kazuhiro YAMASHITA
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14627 , G02B3/0062 , G02B27/40 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H04N5/37457
摘要： A solid-state imaging device according o an implementation of the present invention includes a plurality of unit pixels arranged in rows and columns. The unit pixels each include a photodiode which performs photoelectric conversion, a top lens which collects light, and an intralayer lens which collects, onto the photodiode, the light collected by the top lens. A centroid of the photodiode is displaced from the center of the unit pixel in a first direction. The center of the top lens is displaced from the center of the unit pixel in the first direction. A centroid of the intralayer lens is displaced from the center of the unit pixel in the first direction.
摘要翻译：根据本发明的实施例的固态成像装置包括以行和列排列的多个单位像素。单位像素各自包括执行光电转换的光电二极管，收集光的顶部透镜以及收集在光电二极管上的由顶部透镜收集的光的层内透镜。光电二极管的质心在第一方向上从单位像素的中心位移。顶部透镜的中心在第一方向上偏离单位像素的中心。层内透镜的质心在第一方向上从单位像素的中心位移。

10. 发明申请

US20090090943A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090090943A1
公开(公告)日：2009-04-09
申请号：US12239111
申请日：2008-09-26
申请人： Tatsuya HIRATA , Motonari KATSUNO
发明人： Tatsuya HIRATA , Motonari KATSUNO
IPC分类号： H01L31/112 , H01L21/336
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14689
摘要： A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first is region, under an end of the gate electrode in a gate width direction.
摘要翻译：本发明的固态成像装置包括：包括第一导电类型的第一区域的半导体衬底; 形成在第一区域内的第二导电类型的信号聚集区域; 形成在所述第一区域上方的栅电极; 形成在所述第一区域上的第二导电类型的漏区; 具有绝缘性的隔离区域，其被形成为围绕形成信号存储区域，栅极电极和漏极区域的区域; 形成为与隔离区的侧面和底面接触的第一导电型掺杂剂掺杂区，所述第一导电型掺杂剂掺杂区具有比所述第一区更高的掺杂浓度; 以及形成在栅极宽度方向上的栅电极的端部的第一区域中的第二导电型掺杂剂掺杂区域。

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