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1. 发明申请

US20110080509A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110080509A1
公开(公告)日：2011-04-07
申请号：US12966286
申请日：2010-12-13
申请人： Motonari KATSUNO , Kazuhiro YAMASHITA , Kosaku SAEKI
发明人： Motonari KATSUNO , Kazuhiro YAMASHITA , Kosaku SAEKI
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： G02B3/02 , G02B3/0056 , G02B5/045 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H04N5/2254
摘要： A solid-state imaging device according to an implementation of the present invention is a solid-state imaging device including a plurality of unit pixels arranged in a matrix, and each of the unit pixels includes a photodiode which performs photoelectric conversion on light so as to convert the light into an electric signal, a top lens which collects incident light, and an intralayer lens which collects, to the photodiode, the incident light collected by the top lens, and a centroid of the photodiode is displaced from a center of the unit pixel into a first direction, the top lens is formed into an asymmetric shape so as to have a centroid displaced from the center of the unit pixel into the first direction, and the intralayer lens is formed to have a centroid displaced from the center of the unit pixel into the first direction.
摘要翻译：根据本发明的实施方式的固态成像装置是包括以矩阵形式排列的多个单位像素的固态成像装置，并且每个单位像素包括在光上进行光电转换的光电二极管，以便将光转换为电信号，收集入射光的顶部透镜以及聚光透镜中的由顶部透镜收集的入射光的内部透镜，并且光电二极管的质心从单元的中心位移像素进入第一方向，顶部透镜被形成为不对称形状，以使得具有从单位像素的中心向第一方向偏移的质心，并且层内透镜形成为具有从中心位移的质心单位像素进入第一个方向。

2. 发明申请

US20110063486A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110063486A1
公开(公告)日：2011-03-17
申请号：US12950387
申请日：2010-11-19
申请人： Kosaku SAEKI , Motonari KATSUNO , Kazuhiro YAMASHITA
发明人： Kosaku SAEKI , Motonari KATSUNO , Kazuhiro YAMASHITA
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14627 , G02B3/0062 , G02B27/40 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H04N5/37457
摘要： A solid-state imaging device according o an implementation of the present invention includes a plurality of unit pixels arranged in rows and columns. The unit pixels each include a photodiode which performs photoelectric conversion, a top lens which collects light, and an intralayer lens which collects, onto the photodiode, the light collected by the top lens. A centroid of the photodiode is displaced from the center of the unit pixel in a first direction. The center of the top lens is displaced from the center of the unit pixel in the first direction. A centroid of the intralayer lens is displaced from the center of the unit pixel in the first direction.
摘要翻译：根据本发明的实施例的固态成像装置包括以行和列排列的多个单位像素。单位像素各自包括执行光电转换的光电二极管，收集光的顶部透镜以及收集在光电二极管上的由顶部透镜收集的光的层内透镜。光电二极管的质心在第一方向上从单位像素的中心位移。顶部透镜的中心在第一方向上偏离单位像素的中心。层内透镜的质心在第一方向上从单位像素的中心位移。

3. 发明申请

US20110309460A1 SOLID-STATE IMAGING DEVICE INCLUDING A MULTILAYER WIRING LAYER, COLOR FILTERS, AND LENSES, AND MANUFACTURING METHOD FOR THE SAME 失效
标题翻译：包括多层布线层，彩色滤光片和透镜的固态成像装置及其制造方法
公开(公告)号：US20110309460A1
公开(公告)日：2011-12-22
申请号：US13162092
申请日：2011-06-16
申请人： Shoichiro TSUJI , Kazuhiro YAMASHITA
发明人： Shoichiro TSUJI , Kazuhiro YAMASHITA
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14687
摘要： The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.
摘要翻译：本发明提供了一种固态成像装置，包括：具有像素区域和外围电路区域的半导体衬底; 多层布线层，其包括布线层和介于其间的层间膜，并且设置在所述半导体基板的上方以覆盖除了所述光电转换元件之上的区域以外的像素区域和外围电路区域; 波导部件，其填充所述光电转换元件（波导）上方的区域，并且至少在所述像素区域内覆盖所述多层布线层; 以及设置在像素区域内的波导构件上方的光学结构（由滤色器材料和透镜材料组成），其中通过从位于像素区域内的像素区域内的区域去除波导构件的一部分而形成凹槽边界在像素区域和外围电路区域之间。

4. 发明申请

US20120037960A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120037960A1
公开(公告)日：2012-02-16
申请号：US13238537
申请日：2011-09-21
申请人： Haruhisa YOKOYAMA , Hiroshi SAKOH , Kazuhiro YAMASHITA , Mitsuo YASUHIRA , Yuichi HIROFUJI
发明人： Haruhisa YOKOYAMA , Hiroshi SAKOH , Kazuhiro YAMASHITA , Mitsuo YASUHIRA , Yuichi HIROFUJI
IPC分类号： H01L27/142
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14656
摘要： A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
摘要翻译：根据本发明的固态成像装置是MOS型的，并且包括排列成行和列的多个像素，并且包括：半导体衬底; 形成在所述半导体衬底中并将从所述半导体衬底的第一主表面入射的光转换为信号电荷的光电二极管; 传输晶体管，其形成在半导体衬底的第二主表面中并传送由光电二极管转换的信号电荷; 在半导体衬底的第一主表面之上的像素之间的边界上导电并形成的遮光膜; 与所述遮光膜电连接并形成在所述半导体衬底的所述第一主表面中的溢出漏极区域; 以及形成在溢出漏极区域和光电二极管之间的溢出阻挡区域。

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