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1. 发明授权

US07371320B2 Magnetic separation unit and water purification system 有权
标题翻译：磁选机和净水系统
公开(公告)号：US07371320B2
公开(公告)日：2008-05-13
申请号：US11008193
申请日：2004-12-10
申请人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
发明人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
IPC分类号： C02F1/48
CPC分类号： C02F1/488 , B03C1/01 , B03C1/032 , B03C1/0337 , B03C1/034 , B03C2201/18 , C02F1/001 , C02F1/5236 , C02F1/56 , C02F1/66 , C02F11/14 , C02F2301/046
摘要： A magnetic separation unit can prevent any magnetic flocs deposited on an inner wall of a water passing pipe from closing a water channel for stabilizing a magnetic separation performance and reduce cost by a small-diameter portion of the water passing pipe. The magnetic separation unit has an air-core solenoid type magnet provided around the water passing pipe guiding, from a lower side, treated water including magnetic flocs in which contaminants and magnetic particles are flocculated, a rotating disc type magnetic filter case provided above the air-core solenoid type magnet for attracting the magnetic flocs in the treated water supplied from the water passing pipe and flushing means for flushing the matrixes to which the magnetic flocs are attracted. The water passing pipe has a small-diameter pipe positioned in the air-core solenoid type magnet, and an enlarged pipe enlarged from the small-diameter pipe toward a water passing part of the rotating disc type magnetic filter case.
摘要翻译：磁分离单元可以防止沉积在水通过管的内壁上的任何磁性絮凝物关闭水通道以稳定磁分离性能，并且通过水通过管的小直径部分降低成本。磁分离单元具有设置在水通过管周围的空心螺线管型磁体，从下侧引导包括污染物和磁性颗粒絮凝的磁性絮凝物的处理水，设置在空气上方的旋转盘型磁性过滤器壳体用于吸引从通水管供给的处理水中的磁絮凝物的芯螺线管型磁体和用于冲洗磁絮凝物所吸收的基体的冲洗装置。通水管具有位于空心螺线管型磁体中的小直径管，并且从小直径管朝向旋转盘型磁性过滤器壳体的水通过部分扩大的管。

2. 发明申请

US20050126976A1 Magnetic separation unit and water purification system 有权
标题翻译：磁选机和净水系统
公开(公告)号：US20050126976A1
公开(公告)日：2005-06-16
申请号：US11008193
申请日：2004-12-10
申请人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
发明人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
IPC分类号： C02F1/52 , B03C1/00 , B03C1/027 , B03C1/029 , B03C1/03 , B03C1/032 , C02F1/48 , C02F1/56 , C02F1/66 , C02F11/14
CPC分类号： C02F1/488 , B03C1/01 , B03C1/032 , B03C1/0337 , B03C1/034 , B03C2201/18 , C02F1/001 , C02F1/5236 , C02F1/56 , C02F1/66 , C02F11/14 , C02F2301/046
摘要： A magnetic separation unit can prevent any magnetic flocs deposited on an inner wall of a water passing pipe from closing a water channel for stabilizing a magnetic separation performance and reduce cost by a small-diameter portion of the water passing pipe. The magnetic separation unit has an air-core solenoid type magnet provided around the water passing pipe guiding, from a lower side, treated water including magnetic flocs in which contaminants and magnetic particles are flocculated, a rotating disc type magnetic filter case provided above the air-core solenoid type magnet for attracting the magnetic flocs in the treated water supplied from the water passing pipe and flushing means for flushing the matrixes to which the magnetic flocs are attracted. The water passing pipe has a small-diameter pipe positioned in the air-core solenoid type magnet, and an enlarged pipe enlarged from the small-diameter pipe toward a water passing part of the rotating disc type magnetic filter case.
摘要翻译：磁分离单元可以防止沉积在水通过管的内壁上的任何磁性絮凝物关闭水通道以稳定磁分离性能，并且通过水通过管的小直径部分降低成本。磁分离单元具有设置在水通过管周围的空心螺线管型磁体，从下侧引导包括污染物和磁性颗粒絮凝的磁性絮凝物的处理水，设置在空气上方的旋转盘型磁性过滤器壳体用于吸引从通水管供给的处理水中的磁絮凝物的芯螺线管型磁体和用于冲洗磁絮凝物所吸收的基体的冲洗装置。通水管具有位于空心螺线管型磁体中的小直径管，并且从小直径管朝向旋转盘型磁性过滤器壳体的水通过部分扩大的管。

3. 发明授权

US09406871B2 Magnetoresistive element and method of manufacturing the same 有权
公开(公告)号：US09406871B2
公开(公告)日：2016-08-02
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
发明人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
IPC分类号： H01L43/00 , H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12 , H01L43/10
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

4. 发明授权

US09236563B2 Magnetic memory device and method of manufacturing the magnetic memory device 有权
标题翻译：磁存储器件及其制造方法
公开(公告)号：US09236563B2
公开(公告)日：2016-01-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
发明人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
IPC分类号： G11C11/16 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译：根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

5. 发明授权

US08895162B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08895162B2
公开(公告)日：2014-11-25
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya Nishiyama , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Chunlan Feng
发明人： Katsuya Nishiyama , Wu Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G01R33/09 , H01L43/08 , H01F10/32 , H01L43/10 , H01F10/193 , G11C11/16 , H01L27/22 , B82Y25/00 , H01F10/28
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

6. 发明授权

US08884389B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08884389B2
公开(公告)日：2014-11-11
申请号：US13618780
申请日：2012-09-14
申请人： Masaru Toko , Masahiko Nakayama , Akihiro Nitayama , Tatsuya Kishi , Hisanori Aikawa , Hiroaki Yoda
发明人： Masaru Toko , Masahiko Nakayama , Akihiro Nitayama , Tatsuya Kishi , Hisanori Aikawa , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L21/8239 , H01L43/10 , H01L43/12 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
摘要翻译：根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有磁化方向可变并垂直于膜表面。第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

7. 发明授权

US08705269B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08705269B2
公开(公告)日：2014-04-22
申请号：US13232782
申请日：2011-09-14
申请人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置，所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

8. 发明授权

US08502331B2 Magnetoresistive effect element, magnetic memory 有权
标题翻译：磁阻效应元件，磁记忆体
公开(公告)号：US08502331B2
公开(公告)日：2013-08-06
申请号：US13234720
申请日：2011-09-16
申请人： Eiji Kitagawa , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Eiji Kitagawa , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
摘要翻译：根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。磁性膜包括非晶相和粒径为0.5nm以上的晶体。

9. 发明授权

US08349622B2 Magneto-resistive element 有权
公开(公告)号：US08349622B2
公开(公告)日：2013-01-08
申请号：US12361575
申请日：2009-01-29
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

10. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

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