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1. 发明申请

US20120326251A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20120326251A1
公开(公告)日：2012-12-27
申请号：US13425328
申请日：2012-03-20
申请人： Koji Yamakawa , Daisuke Ikeno , Yasuyuki Sonoda
发明人： Koji Yamakawa , Daisuke Ikeno , Yasuyuki Sonoda
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L27/222
摘要： According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.
摘要翻译：根据一个实施例，半导体存储器件包括二维排列在半导体衬底上的多个磁阻元件。在半导体存储器件中，每个磁阻元件包括：形成在半导体衬底上的第一磁性层; 形成在所述第一磁性层上的非磁性层; 以及形成在非磁性层上的第二磁性层和埋在彼此相邻的磁阻元件之间的绝缘膜，由金属材料或磁性材料制成的粉末分散在绝缘膜中。

2. 发明申请

US20120217476A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120217476A1
公开(公告)日：2012-08-30
申请号：US13407630
申请日：2012-02-28
申请人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
发明人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , H01L27/226 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.
摘要翻译：根据一个实施例，公开了一种具有磁阻效应元件的存储器件。该元件包括具有非磁性元素的第一金属磁性膜（MMF）和易磁化垂直轴（EMP），第一绝缘膜，第一MMF和第一绝缘膜之间的第一中间磁性膜，第一绝缘膜上的第二MMF，非磁性元件，具有EMP轴的第二MMF，第一绝缘膜和第二MMF之间的第二中间磁性膜，以及包括具有阻挡性的金属氮化物的扩散防止膜，其具有防止非磁性元件在第一MMF与第一中间磁体之间的扩散电影。

3. 发明授权

US08110497B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08110497B2
公开(公告)日：2012-02-07
申请号：US12646598
申请日：2009-12-23
申请人： Atsuko Sakata , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
发明人： Atsuko Sakata , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
IPC分类号： H01L21/4763
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76807 , H01L21/76835 , H01L21/76864 , H01L21/76877
摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.
摘要翻译：本发明的实施例提供一种用于制造半导体器件的方法。该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

4. 发明申请

US20100167529A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100167529A1
公开(公告)日：2010-07-01
申请号：US12646598
申请日：2009-12-23
申请人： Atsuko SAKATA , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
发明人： Atsuko SAKATA , Soichi Yamashita , Yasuyuki Sonoda , Hiroshi Toyoda , Masahiko Hasunuma
IPC分类号： H01L21/768
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76807 , H01L21/76835 , H01L21/76864 , H01L21/76877
摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.
摘要翻译：本发明的实施例提供一种用于制造半导体器件的方法。该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

5. 发明授权

US07437750B1 Data transceiving system and method therefor 有权
标题翻译：数据收发系统及其方法
公开(公告)号：US07437750B1
公开(公告)日：2008-10-14
申请号：US09545851
申请日：2000-04-10
申请人： Yasuyuki Sonoda , Tatsuya Shimoji , Kazuo Okamura
发明人： Yasuyuki Sonoda , Tatsuya Shimoji , Kazuo Okamura
IPC分类号： H04N5/445 , H04N7/173
CPC分类号： H04N21/435 , H04N7/17327 , H04N21/235 , H04N21/2408 , H04N21/47815 , H04N21/6375 , H04N21/6547
摘要： An object is to perform retrial processing according to the allowable volume on communication lines made available at response information receiving equipment. A broadcast unit 140, when broadcasting video and audio, includes retrial information in that broadcast, according to the allowable volume on the communication lines between the television receivers and the response information receiving equipment 150. Television receivers effect display based on the received digital data. Response information input by users is sent to the response information receiving equipment 150. The television receivers make retrial transmissions based on the received retrial information when communications could not be established with the response information receiving equipment 150. This retrial information is responsive to the allowable volume on the communication lines between the television receivers and the response information receiving equipment 150, wherefore retrial transmissions are made according to the allowable volume on the communication lines.
摘要翻译：目的是根据在响应信息接收设备上可用的通信线路上允许的容量进行重试处理。广播单元140在广播视频和音频时，根据电视接收机和响应信息接收设备150之间的通信线路上允许的容量，包括该广播中的重试信息。电视接收机根据接收到的数字数据进行显示。用户输入的响应信息被发送到响应信息接收设备150。当与响应信息接收设备150无法建立通信时，电视接收机基于所接收的重试信息进行重试传输。该重试信息响应于电视接收机与响应信息接收设备150之间的通信线路上的允许音量，因此根据通信线路上允许的音量进行重试传输。

6. 发明授权

US06557171B1 DIGITAL TV BROADCAST SENDING APPARATUS, DIGITAL TV BROADCAST RECEIVING APPARATUS, AND DIGITAL TV BROADCAST SENDING / RECEIVING SYSTEM WHICH FACILITATE PRESELECTION OF TV PROGRAMS, AND COMPUTER READABLE RECORDING MEDIUM STORING A PROGRAM FOR ACHIEVING A FUNCTION OF THE DIGITAL TV BROADCAST RECEIVING APPARATUS 失效
标题翻译：数字电视广播发送装置，数字电视广播接收装置，数字电视广播发送/接收系统，电视节目预约和计算机可读记录媒体存储实现数字电视广播接收装置功能的程序
公开(公告)号：US06557171B1
公开(公告)日：2003-04-29
申请号：US09241339
申请日：1999-02-01
申请人： Yasuyuki Sonoda , Tatsuya Shimoji , Masahiro Oashi , Kazuo Okamura , Yoshihiro Mimura , Naoya Takao
发明人： Yasuyuki Sonoda , Tatsuya Shimoji , Masahiro Oashi , Kazuo Okamura , Yoshihiro Mimura , Naoya Takao
IPC分类号： H04H716
CPC分类号： H04N5/4401 , H04H20/93 , H04H60/27 , H04N21/235 , H04N21/23614 , H04N21/2362 , H04N21/4312 , H04N21/4345 , H04N21/4348 , H04N21/435 , H04N21/482
摘要： A digital broadcast sending/receiving system includes a digital broadcast sending apparatus and a digital broadcast receiving apparatus. The digital broadcast sending apparatus multiplexes the audio data and video data of a broadcast program into the transport stream together with preselection control information which controls preselection information image facilitating program preselection, and sends the transport stream to the digital broadcast receiving apparatus. On receiving the transport stream, the digital broadcast receiving apparatus extracts the preselection control information, and reproduces a preselection screen on a display in which the preselection information image is superimposed on the video image of the broadcast program. The digital broadcast receiving apparatus receives from the viewer specification of a program to be preselected. The digital broadcast receiving apparatus stores information on the preselected program, and reproduces the preselected program in accordance with the stored information.
摘要翻译：数字广播发送/接收系统包括数字广播发送装置和数字广播接收装置。数字广播发送装置将广播节目的音频数据和视频数据与控制预选信息图像的预选控制信息一起复用到传输流中，并且将传输流发送到数字广播接收装置。在接收传输流时，数字广播接收装置提取预选控制信息，并且在预选信息图像叠加在广播节目的视频图像上的显示器上再现预选屏幕。数字广播接收装置从观众接收要预选的节目。数字广播接收装置存储关于预选程序的信息，并且根据所存储的信息再现预选程序。

7. 发明授权

US08653614B2 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08653614B2
公开(公告)日：2014-02-18
申请号：US13407630
申请日：2012-02-28
申请人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
发明人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
IPC分类号： H01L21/76
CPC分类号： H01L43/02 , G11C11/161 , H01L27/226 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.
摘要翻译：根据一个实施例，公开了一种具有磁阻效应元件的存储器件。该元件包括具有非磁性元素的第一金属磁性膜（MMF）和易磁化垂直轴（EMP），第一绝缘膜，第一MMF和第一绝缘膜之间的第一中间磁性膜，第一绝缘膜上的第二MMF，非磁性元件，具有EMP轴的第二MMF，第一绝缘膜和第二MMF之间的第二中间磁性膜，以及包括具有阻挡性的金属氮化物的扩散防止膜，其具有防止非磁性元件在第一MMF与第一中间磁体之间的扩散电影。

8. 发明申请

US20130005148A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130005148A1
公开(公告)日：2013-01-03
申请号：US13428535
申请日：2012-03-23
申请人： Yasuyuki Sonoda , Kyoichi Suguro , Masatoshi Yoshikawa , Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno
发明人： Yasuyuki Sonoda , Kyoichi Suguro , Masatoshi Yoshikawa , Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.
摘要翻译：根据一个实施方案，一种制造半导体器件的方法，该方法包括在基底层上形成柱，在基底层上形成绝缘层以通过GCIB法覆盖柱，其中上表面的最下部分绝缘层低于柱的上表面，并且通过使用CMP方法研磨绝缘层和柱以露出柱的头部，其中抛光的终点是上表面的最下部绝缘层。

9. 发明申请

US20120112297A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20120112297A1
公开(公告)日：2012-05-10
申请号：US13049806
申请日：2011-03-16
申请人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
发明人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory including a magneto resistive element, including a free layer including first metal atoms, a first metal layer on the free layer and including a first metal, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer provided on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second metal layer on the second interfacial magnetic layer and including a second metal, and a pinned layer provided on the second metal layer and including the second metal atoms.
摘要翻译：根据一个实施例，包括磁阻元件的磁性随机存取存储器包括包含第一金属原子的自由层，在自由层上的第一金属层，并且包括第一金属，第一金属层上的第一界面磁性层，设置在第一界面磁性层上的非磁性层，非磁性层上的第二界面磁性层，第二界面磁性层上的第二金属层，并包括第二金属，以及设置在第二金属层上的被钉扎层，第二金属原子。

10. 发明申请

US20070022452A1 BROADCAST SYSTEM AND METHOD THEREFOR 有权
标题翻译：广播系统及其方法
公开(公告)号：US20070022452A1
公开(公告)日：2007-01-25
申请号：US11470838
申请日：2006-09-07
申请人： Keisei YAMAMURO , Yasuyuki SONODA
发明人： Keisei YAMAMURO , Yasuyuki SONODA
IPC分类号： H04N7/173 , H04N7/16
CPC分类号： H04H20/93 , H04H60/47 , H04H60/65 , H04H60/82
摘要： A sorting section in a restoration section sorts out a packet for an intended service from a transport stream received according to the control of a reception control section. The sorted out packet is provided to an output section and restored to NTSC signals. An audiovisual output section (such as a TV set) receives the signals and outputs images and voices. The reception control section acquires information on the type of contents chosen out of the transport stream through the sorting section, and further compares the contents type information with restorable contents type information recorded in a restorable contents type information recording section. Then, a determination is made whether or not the contents intended for restoration are restorable. Depending on the determination, the manner of process applied to the contents is changed. For example, the restoration of the contents is interrupted.
摘要翻译：恢复部分中的分类部分根据接收控制部分的控制从传输流中分出用于预期服务的分组。经整理的分组被提供给输出部分并恢复为NTSC信号。音像输出部分（如电视机）接收信号并输出图像和声音。接收控制部分通过分类部分获取从传输流中选择的内容的类型的信息，并且进一步将内容类型信息与记录在可恢复内容类型信息记录部分中的可恢复内容类型信息进行比较。然后，确定旨在恢复的内容是否可恢复。取决于确定，应用于内容的过程的方式改变。例如，内容的恢复被中断。

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