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    • 2. 发明授权
    • Manufacturing method of MEMS device, and substrate used therefor
    • MEMS器件的制造方法及其使用的衬底
    • US08293557B2
    • 2012-10-23
    • US13012104
    • 2011-01-24
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • H01L21/00
    • H01H59/0009Y10T428/24521Y10T428/24562
    • A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate on which the cavity is formed and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface on which the thermally-oxidized film for the movable portion is formed; forming a sacrifice layer on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
    • 一种MEMS器件的制造方法,包括:准备具有形成有空腔的第一基板的基板和与形成有所述空腔的所述第一基板的一侧接合的第二基板,所述第二基板具有狭缝, 在与空腔相对应的位置限定可移动部分,所述第二基板包括其面向所述第一基板的第一表面,所述第二基板具有在对应于所述可动部分的位置中选择性地形成在所述第一表面上的热氧化膜; 在形成有用于可动部分的热氧化膜的第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲层; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。
    • 3. 发明申请
    • MANUFACTURING METHOD OF MEMS DEVICE, AND SUBSTRATE USED THEREFOR
    • MEMS器件的制造方法及其使用的衬底
    • US20130022790A1
    • 2013-01-24
    • US13609703
    • 2012-09-11
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • B32B3/30
    • H01H59/0009Y10T428/24521Y10T428/24562
    • A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface; forming a sacrifice lager on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
    • 一种MEMS器件的制造方法,其特征在于,包括:准备具有形成有空腔的第一基板的基板和与所述第一基板的一侧接合的第二基板,所述第二基板包括用于限定所述第一基板的可动部的狭缝 包括与第一基板相对的第一表面的第二基板设置有在与第一基板相对应的位置上选择性地形成在第一表面上的热氧化膜; 在与所述第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲物; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。
    • 7. 发明申请
    • MANUFACTURING METHOD OF MEMS DEVICE, AND SUBSTRATE USED THEREFOR
    • MEMS器件的制造方法及其使用的衬底
    • US20110223702A1
    • 2011-09-15
    • US13012104
    • 2011-01-24
    • Hiroaki INOUETadashi NakataniSatoshi Ueda
    • Hiroaki INOUETadashi NakataniSatoshi Ueda
    • H01L21/02B32B3/30
    • H01H59/0009Y10T428/24521Y10T428/24562
    • A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate on which the cavity is formed and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface on which the thermally-oxidized film for the movable portion is formed; forming a sacrifice layer on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
    • 一种MEMS器件的制造方法,包括:准备具有形成有空腔的第一基板的基板和与形成有所述空腔的所述第一基板的一侧接合的第二基板,所述第二基板具有狭缝, 在与空腔相对应的位置限定可移动部分,所述第二基板包括其面向所述第一基板的第一表面,所述第二基板具有在对应于所述可动部分的位置中选择性地形成在所述第一表面上的热氧化膜; 在形成有用于可动部分的热氧化膜的第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲层; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。
    • 8. 发明授权
    • Variable capacitor and method of manufacturing variable capacitor
    • 可变电容器及制造可变电容器的方法
    • US07307827B2
    • 2007-12-11
    • US11104453
    • 2005-04-13
    • Takeaki ShimanouchiMasahiko ImaiTadashi NakataniAnh Tuan NguyenSatoshi Ueda
    • Takeaki ShimanouchiMasahiko ImaiTadashi NakataniAnh Tuan NguyenSatoshi Ueda
    • H01G5/01H01G7/00
    • H01G5/18H01G5/16Y10T29/417Y10T29/435
    • The first movable electrode is flat, but the second movable electrode is deformed into a convex shape. A dielectric layer is placed on the facing surface of the second movable electrode. By adjusting a voltage to be applied between the first movable electrode and the second movable electrode, an arbitrary distance is secured between the two electrodes by the electrostatic attractive force generated between the two electrodes, and a desired electrostatic capacitance is obtained. When the distance between the two electrodes is shortened, first, at the center, a part of the first movable electrode and a part of the second movable electrode come into contact with each other with the dielectric layer between them. Then, the first movable electrode and the dielectric layer (second movable electrode) come into contact with each other successively from the contact part towards the periphery side, and the contact area gradually increases.
    • 第一可动电极是平坦的,但是第二可动电极变形为凸形。 电介质层被放置在第二可动电极的相对表面上。 通过调整施加在第一可动电极和第二可动电极之间的电压,通过在两个电极之间产生的静电吸引力,确保两个电极之间的任意距离,并获得所需的静电电容。 当两个电极之间的距离缩短时,首先在中心处,第一可移动电极的一部分和第二可动电极的一部分彼此接触,并且它们之间具有介电层。 然后,第一可动电极和电介质层(第二可动电极)从接触部朝向周边依次相接触,接触面积逐渐增大。
    • 9. 发明申请
    • Switch
    • 开关
    • US20070080764A1
    • 2007-04-12
    • US11544017
    • 2006-10-06
    • Yu YonezawaNaoyuki MishimaTadashi NakataniAnh NguyenSatoshi Ueda
    • Yu YonezawaNaoyuki MishimaTadashi NakataniAnh NguyenSatoshi Ueda
    • H01P1/10
    • H01H9/40H01H1/0036H01H9/42H01H2001/0078
    • A switch includes a first member, one end of which being secured to a substrate, multiple first beam portions respectively having multiple first contact portions, one ends of the multiple beam portions being secured to the first member, multiple contact switch portions connected in parallel, the multiple first contact portions and multiple second contact portions being in a contact state or in a non-contact state in the multiple contact switch portions, and resistors arranged respectively between the multiple contact switch portions and a common connection point to which the multiple contact switch portions are coupled. When at least one of the multiple switch portions is in a contact state, one of the resistors corresponding to the at least one of the multiple switch portions in a contact state has a resistance value greater than another one of the resistors corresponding to at least one of the multiple contact switch portions that is in a non-contact state.
    • 开关包括第一构件,其一端固定到基板,分别具有多个第一接触部分的多个第一梁部分,多个梁部分的一端固定到第一构件,并联连接的多个接触开关部分, 所述多个第一接触部分和多个第二接触部分在所述多个接触开关部分中处于接触状态或非接触状态,以及分别布置在所述多个接触开关部分和所述多个接触开关之间的公共连接点 部分耦合。 当多个开关部分中的至少一个处于接触状态时,与接触状态的多个开关部分中的至少一个相对应的电阻器中的一个具有大于对应于至少一个的电阻器中的另一个的电阻值 处于非接触状态的多个接触开关部分。